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Ece Software Report

This lab report describes 6 experiments conducted to analyze various electronic components and circuits. Experiment 1 examines the V-I characteristics of a PN junction diode. Experiment 2 analyzes the characteristics of a zener diode. Experiment 3 studies half wave and full wave rectifier circuits with and without filters. Experiment 4 analyzes clipper and clamper circuits. Experiment 5 plots the input and output characteristics of a transistor in a common base configuration. Experiment 6 examines the transfer and output characteristics of a MOSFET. Graphs and calculations from simulations of each circuit are included.

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74 views

Ece Software Report

This lab report describes 6 experiments conducted to analyze various electronic components and circuits. Experiment 1 examines the V-I characteristics of a PN junction diode. Experiment 2 analyzes the characteristics of a zener diode. Experiment 3 studies half wave and full wave rectifier circuits with and without filters. Experiment 4 analyzes clipper and clamper circuits. Experiment 5 plots the input and output characteristics of a transistor in a common base configuration. Experiment 6 examines the transfer and output characteristics of a MOSFET. Graphs and calculations from simulations of each circuit are included.

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WINORLOSE
Copyright
© © All Rights Reserved
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Download as DOCX, PDF, TXT or read online on Scribd
You are on page 1/ 38

Name- Hemant Pamnani

Registeration no.-18BEC1241
Branch- ECE

Consolidated SDC Software


Lab Report

EXPERIMENT NO.1
V - I CHARACTERISTICS OF A PN JUNCTION DIODE

AIM:-
To determine the V - I characteristics of a PN Junction diode.

APPARATUS REQUIRED:-

Sr no. Name of the component Range


1. Voltage Source
2. Resistor 1kohm

3. PN Junction diode 1N750

CIRCUIT SCHEMATICS: -
Forward Bias:-

Reverse Bias:-
MODEL GRAPHS:-

PROCEDURE:-

1.Connections are made as per the circuit diagram


2. Simulate the circuit and observe the voltage charcaterstics
3. Find the slope and verify the resistance.

Graph:-
Forward Bias:-

Reverse Bias:-

CALCULATIONS:-
Forward Bias:-
X1=0.7v
Y1=101.67 micro ampere
X2=0.9v
Y2=277.02 micro ampere
Resistance=1/slope
R=dx/dy
R=(0.9-0.7)*1000000/(277.02-101.67)
R=1040 ohm Ans

Reverse Bias:-
X1=3v
Y1=-3.03pA
X2=5v
Y2=-4.97pA
Resistance=1/slope
R=dx/dy
R=(5-2)*1000/(-4.97-(-3.03))
R=1030 0hm Ans

SIMULATION PROFILE:-
DC SWEEP:-(REVERSE BIAS)

DC SWEEP :-(FORWARD BIAS)


RESULT:-
Forward and reverse characreristics is obtained and their resitances
are found respectively.
EXPERIMENT NO.-2
ZENER DIODE CHARACTERSTICS

Aim:-
To verify the V-I characteristics of zener diode in forward and
reverse bias.

APPARATUS REQUIRED:-
Sr no. Name of the component Range
1. Voltage Source
2. Resistor 1kohm

3. Zener diode 1N750

CIRCUIT SCHEMATICS: -

Forward Bias:-
Reverse Bias:-

Procedure:-
1. We connect the circuits in forward bias and select the values of
voltage, zener diode and resister.
2. Stimulate 0 to 5 at interval of .1 in forward bias and 0 to -5 at
interval of .1 in reverse bias.
3. We then get the desired graph for forward and reverse bias.
MODEL GRAPH:-
GRAPH:-
Forward Bias:-

Reverse Bias:-
SIMULATION PROFILE:-

RESULT:-

Hence, verified the V-I characteristics of zener diode in forward and


reverse bias.
EXPERIMENT NO.3
DIODE APPLICATIONS
AIM:
To rectify the given input AC signal and to visualize the output waveform in a
CRO for Half wave and Full wave rectifier with and without filters and to
calculate the ripple factor.

APPARATUS REQUIRED:

Sr no. Name of the component Range


1. Voltage Source
2. Capacitor 1uF 10uF

3. Resistor 1kohm

4. PN Junction diode 1N4007

CIRCUIT SCHEMATICS: -

Half Wave Rectifier Without Filter:-


Half Wave Rectifier With Filter:-

1)1uF

2) C=10uF
3) C=100uF

Full Wave Rectifier Without Filter:-


Full Wave Rectifier Without Filter:-
1) C=10uF

2) C=100uF
DESIGN & FORMULA:-

Half Wave Rectifier(without filter) Full Wave Rectifier (without filter)


Vrms= Vm/2 Vrms=Vm/√2
Vdc= Vm/Π Vdc= 2Vm/Π
Half and Full Wave Rectifier with filter
rms = Vrpp / 2√3
Vdc =Vm – (Vrpp/2)
Ripple factor(without filter) γ = √((Vrms/Vdc)2-1)
Ripple factor (with filter) γ = V’ / V
rms dc
Where γ = Ripple factor.
Vdc = average value of voltage
rms = rms value of the ripple voltage.
Vrpp = peak to peak ripple voltage.

MODEL GRAPHS:-
Input Supply Voltage

Output Voltage of Half wave Rectifier with and without filter


Output Voltage of Full wave Rectifier with and without filter

PROCEDURE:-

1.Connections are made as per the circuit diagram


2. Simulate the circuit and observe the voltage
3. Repeat step 3 with different values of filter capacitor.
4. Calculate the ripple factor for the obtained waveform
OUTPUT GRAPHS:-
Half Wave without Filter:-

Half Wave Rectifier with filter with C=1uF:-


Half Wave Rectifier with filter with C=100uF:-

Full Wave Rectifier without Filter:-


Full Wave Rectifier without Filter:-

Full Wave Rectifier with filter with C=100uF :-

Full Wave Rectifier with filter with C=10uF :-


Simulation Profile:-
TRANSIENT:-

RESULT:- Thus the working of the half wave rectifier and full wave bridge
rectifier with and without filter was studied.
EXPERIMENT NO.-4
CLIPPER AND CLAMPER CIRCUITS

AIM:-
To understand and analyse the input and output of clipper and clamper circuits
by using LT-Spice tool.

APPARATUS REQUIRED:-
Sr no. Name of the component Range
1. Voltage Source
2. Resistor 1kohm

3. PN Junction diode 1N4848

CIRCUIT SCHEMATICS:-
Possitive Clipper:-

Negative biased clipper


Positive biased clipper

Negative biased clipper

PROCEDURE:-
1.Bring all the components from the tool bar into workspace and connect them
according to circuit diagram.
2.Now go to edit simulation command and give stop time as 100ms and click
on run button.
3.Place the cursor across the output specified in the circuit diagram.
GRAPH:-
Possitive clipper:-

Negative Clipper:-

Negative biased clipper:-


Positive biased clipper:-

Simulation Profile:-

RESULT:-

Hence , Analysed the input and output of clipper and clamper circuits.
EXPERIMENT NO.-5
COMMON BASE TRANSISTOR CHARACTERSTICS
AIM:-
To plot the input and output characterstics of a transistor connected in a
common base configuration.

APPARATUS REQUIRED:-

Sr no. Name of the component Range


1. Voltage Source 12V
2. Capacitor 1uF 10uF

3. Resistor 100kohm ,10kohm

4. Transistor Bc547B

CIRCUIT SCHEMATICS:-
DESIGN & FORMULA:-

H ib =(V EB2-V EB1)/(I E2-I E1)

H Rb =(V EB2-V EB1)/(V CB2- V CB1)

H fb =(I C2- I C1)/(I E2-I E1)

H ob=(I C2- I C1) /(V CB2- V CB1)

MODEL GRAPHS:-
PROCEDURE:-

1.Connections are made as per the circuit diagram


2. Simulate the circuit .
3.Observe the input and output characterstics of CB configuration

OUTPUT GRAPHS:-
Simulation Profile:-
Operating Point (.op)
TRANSIENT:-

AC ANALYSIS:-
RESULT:-
Hence the input and output characterstics of a transistor connected in a
common base configuration is studied.
EXPERIMENT NO.-6
MOSFET Characteristics

AIM:-
To plot the transfer an output characteristics of a metal-oxide-semiconductor
field effective transistor in common source configuration.

APPARATUS:-
Sr no. Name of the component Range
1. Voltage Source
2. Capacitor 1uF 10uF

3. Resistor 100kohm ,10kohm

4. Mosfet IRFP240

CIRCUIT SCHEMATICS:-
MODEL GRAPHS:-

OUTPUT GRAPHS:-
Simulation Profile:-
Transient:-

AC Analysis:-
Result:-
Hence ,the transfer an output characteristics of a metal-oxide-semiconductor
field effective transistor in common source configuration is studied.

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