Scribd
Upload
2K views4 pages

Energy Band Gap

This experiment aims to determine the energy band gap of a semiconductor using a junction diode. The apparatus includes a power supply, microammeter, semiconductor diode, and oven. The reverse saturation current through the diode is measured at different temperatures. From the slope of a graph of ln(IS/ISmax) vs 1/T, the band gap energy is calculated using the given formula. Measurements are taken from 90°C to 40°C and results are plotted to find the band gap of the semiconductor.

Uploaded by

leelarani1976
Copyright
© © All Rights Reserved
We take content rights seriously. If you suspect this is your content, claim it here.
Available Formats
Download as DOCX, PDF, TXT or read online on Scribd
2K views4 pages

Energy Band Gap

This experiment aims to determine the energy band gap of a semiconductor using a junction diode. The apparatus includes a power supply, microammeter, semiconductor diode, and oven. The reverse saturation current through the diode is measured at different temperatures. From the slope of a graph of ln(IS/ISmax) vs 1/T, the band gap energy is calculated using the given formula. Measurements are taken from 90°C to 40°C and results are plotted to find the band gap of the semiconductor.

Uploaded by

leelarani1976
Copyright
© © All Rights Reserved
We take content rights seriously. If you suspect this is your content, claim it here.
Available Formats
Download as DOCX, PDF, TXT or read online on Scribd
You are on page 1/ 4

Experiment No:

BAND GAP OF A SEMICONDUCTOR

Aim: To determine energy band gap of a semiconductor using a junction diode.

Apparatus: OMEGA TYPE Experimental training board–58, Thermometer (0-1100C)

The board consists of the following built–in parts:


1. 3V D.C. at 15 mA , regulated Power Supply.
2. D.C. microammeter, 65 mm rectangular dial to read 0-50 mA.
3. Semiconductor diode.
4. Oven, electrical heated to heat the semiconductor diode.
5. Main ON/OFF switch, Fuse and Jewel light.

Theory: A semiconductor doped or undoped always possesses an energy gap between its
conduction and valence bands. For conduction of electricity a certain amount of energy is to
be given to the electron, so that it goes from the valence band to the conduction band. This
energy so needed is the measure of the energy gap Eg between the two bands.

P N

- +

Figure 1: Reverse biasing of a P-N junction

When a p-n junction is reverse biased as shown in Figure 1, the current through the
junction is due to minority carriers i.e., due to electrons in P section and holes in N section.
The concentration of these carriers is dependent upon the energy gap Eg. The reverse
saturation current IS is a function of the junction diode temperature, and varies according to
the following relation

eEg
IS =
[ ( )]
I S( max ) exp −
2 kT

where

IS(max) = Maximum value of reverse saturation current in µA


k = Boltzmann’s constant (1.38 x 10-23 J/K)
e = charge of an electron (1.6 x 10-19 C)
Eg = Energy band gap in eV
T = Absolute temperature of the junction in K
e Eg
ln (IS / IS(max)) = - 2kT
(1 .6 x 10−19 ) E g
−23
ln (IS / IS(max)) = - 2 (1 .38 x 10 )T
103
ln (IS / IS(max)) = - 5.797 T
Eg ( )
ln[ Is/ Is(max )]
E g =−
( 5 . 797 {103 /T } )

Thermome

PN junction

Figure 2: Practical circuit diagram

Procedure:
1. Plug the mains lead to the nearest mains socket carrying 230V ± 10% at 50 Hz A.C.
2. Insert the thermometer and the diode in the holes of the oven (The holes near the meter is
for diode OA-79 ).
3. Plug the two leads to the diode in the socket, red plug in red socket and black plug in
black socket.
4. No other connections are necessary as rest of the wiring is built in.
5. Now put the power ON/OFF Switch to ‘ON’ position and see that the jewel light is
glowing.
6. Put the ‘OVEN’ switch to ‘ON’ position and allow the oven temperature to increase up to
850C.

Note: As soon as the temperature reaches 85 0C switch off the oven enabling the
temperature to rise further and then become stable around 900C.

7. When the temperature becomes stable at around 900C, start taking readings of current and
temperature. The current reading should be noted for every 50C drop in temperature. The
readings should be taken till the thermometer reading drops to 400 C.

2
8. Tabulate your readings in the form shown in Table 1.

Table 1: Measurements for temperature and reverse saturation current


S.No. Temperature Temperature 103 / T Reverse Saturation ln (IS / IS(max))
0
in C T in K Current IS
in µA

1. 90 = IS (maximum I)
2. 85
3. 80
4. 75
5. 70
6. 65
7. 60
8. 55
9. 50
10. 45
11. 40

9. Plot a graph between the readings of 103 /T on positive x–axis and ln (IS/IS(max)) on
negative y–axis.

10. After determining the slope of the line calculate the band gap as follows:-

y 2− y1

E g =−
Slope of the line
=−
( x 2−x 1 )
. = . .. . .. eV
5. 797 5 .797

Model Graph

0.0 2.75 2.80 2.85 2.90 2.95 3.00 103/T ((K-1)

0.5 x1 x2

1.0 y1

1.5

2.0 y2

2.5

ln(IS/IS(max))

3
Precautions :

1) The maximum temperature should not exceed 950 C.

2) Bulb of the thermometer and the diode should be inserted well in the oven.

3) Silicon diodes should not be used with the set up as in that case the temperature
needed is 1250 C, and the oven thermometer provided will not stand to this
temperature.

Result
The band gap of the semiconductor is _____________________.

You might also like