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Silicon NPN Power Transistors

This document provides specifications for the 2SC3151 silicon NPN power transistor. It is housed in a TO-3PN package and is suitable for 800V/1.5A switching regulator applications due to its high breakdown voltage of 900V or more, fast switching speeds, and wide safe operating area. Key parameters include a collector-emitter saturation voltage of 2V max, DC current gain of 8-40, and transition frequency of 15MHz min.

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José Joaquim Braga Braga
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45 views

Silicon NPN Power Transistors

This document provides specifications for the 2SC3151 silicon NPN power transistor. It is housed in a TO-3PN package and is suitable for 800V/1.5A switching regulator applications due to its high breakdown voltage of 900V or more, fast switching speeds, and wide safe operating area. Key parameters include a collector-emitter saturation voltage of 2V max, DC current gain of 8-40, and transition frequency of 15MHz min.

Uploaded by

José Joaquim Braga Braga
Copyright
© © All Rights Reserved
We take content rights seriously. If you suspect this is your content, claim it here.
Available Formats
Download as PDF, TXT or read online on Scribd
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JMnic Product Specification

Silicon NPN Power Transistors 2SC3151

DESCRIPTION
・With TO-3PN package
・High breakdown voltage (VCBO≥900V)
・Fast switching speed
・Wide ASO（Safe Operating Area）

APPLICATIONS
・800V/1.5A Switching Regulator Applications

PINNING

PIN DESCRIPTION

1 Base

Collector;connected to
2
mounting base
Fig.1 simplified outline (TO-3PN) and symbol
3 Emitter

Absolute maximum ratings (Ta=25℃)


SYMBOL PARAMETER CONDITIONS VALUE UNIT

VCBO Collector-base voltage Open emitter 900 V

VCEO Collector-emitter voltage Open base 800 V

VEBO Emitter-base voltage Open collector 7 V

IC Collector current 1.5 A

ICM Collector current-peak 5 A

IB Base current 0.8 A

PC Collector power dissipation TC=25℃ 60 W

Tj Junction temperature 150 ℃

Tstg Storage temperature -55~150 ℃


JMnic Product Specification

Silicon NPN Power Transistors 2SC3151

CHARACTERISTICS
Tj=25℃ unless otherwise specified

SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT

V(BR)CEO Collector-emitter breakdown voltage IC=5mA ;RBE=∞ 800 V

V(BR)CBO Collector-base breakdown voltage IC=1mA ;IE=0 900 V

V(BR)EBO Emitter-base breakdown voltage IE=1mA ;IC=0 7 V

VCEsat Collector-emitter saturation voltage IC=0.75A ;IB=0.15A 2.0 V

VBEsat Base-emitter saturation voltage IC=0.75A ;IB=0.15A 1.5 V

ICBO Collector cut-off current VCB=800V; IE=0 10 μA

IEBO Emitter cut-off current VEB=5V; IC=0 10 μA

hFE-1 DC current gain IC=0.1A ; VCE=5V 10 40

hFE -2 DC current gain IC=0.5A ; VCE=5V 8

COB Output capacitance IE=0 ; VCB=10V;f=1MHz 30 pF

fT Transition frequency IC=0.1A ; VCE=10V 15 MHz

Switching times

ton Turn-on time 1.0 μs

IC=1A;IB1=0.2A;IB2=-0.4A
ts Storage time 3.0 μs
RL=400Ω,VCC=400V

tf Fall time 0.7 μs

‹ hFE-1 classifications
K L M

10-20 15-30 20-40

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JMnic Product Specification

Silicon NPN Power Transistors 2SC3151

PACKAGE OUTLINE

Fig.2 outline dimensions

3
JMnic Product Specification

Silicon NPN Power Transistors 2SC3151

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