DATASHEET

HIP4082 FN3676
80V, 1.25A Peak Current H-Bridge FET Driver Rev 5.00
September 30, 2015

The HIP4082 is a medium frequency, medium voltage Features

H-Bridge N-Channel MOSFET driver IC, available in 16 lead
plastic SOIC (N) and DIP packages. • Independently Drives 4 N-Channel FET in Half Bridge or
Full Bridge Configurations
Specifically targeted for PWM motor control and UPS
• Bootstrap Supply Max Voltage to 95VDC
applications, bridge based designs are made simple and
flexible with the HIP4082 H-bridge driver. With operation up • Drives 1000pF Load in Free Air at 50°C with Rise and Fall
to 80V, the device is best suited to applications of moderate Times of Typically 15ns
power levels. • User-Programmable Dead Time (0.1 to 4.5s)
Similar to the HIP4081, it has a flexible input protocol for • DIS (Disable) Overrides Input Control and Refreshes
driving every possible switch combination except those Bootstrap Capacitor when Pulled Low
which would cause a shoot-through condition. The
• Input Logic Thresholds Compatible with 5V to 15V Logic
HIP4082’s reduced drive current allows smaller packaging
Levels
and it has a much wider range of programmable dead times
(0.1 to 4.5s) making it ideal for switching frequencies up to • Shoot-Through Protection
200kHz. The HIP4082 does not contain an internal charge • Undervoltage Protection
pump, but does incorporate non-latching level-shift
translation control of the upper drive circuits. • Pb-Free Plus Anneal Available (RoHS Compliant)

This set of features and specifications is optimized for Applications

applications where size and cost are important. For
• UPS Systems
applications needing higher drive capability the HIP4080A
and HIP4081A are recommended. • DC Motor Controls
• Full Bridge Power Supplies
• Switching Power Amplifiers
• Noise Cancellation Systems
• Battery Powered Vehicles
• Peripherals
• Medium/Large Voice Coil Motors
• Related Literature
- TB363, Guidelines for Handling and Processing
Moisture Sensitive Surface Mount Devices (SMDs)

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Ordering Information
TEMP. PKG.
PART NUMBER PART MARKING RANGE (°C) PACKAGE DWG. #

HIP4082IB* HIP4082IB -55 to +125 16 Ld SOIC (N) M16.15

HIP4082IBZ* 4082IBZ -55 to +125 16 Ld SOIC (N) (Pb-free) M16.15

(Note)

HIP4082IP (No longer avail- HIP4082IP -55 to +125 16 Ld PDIP E16.3

able, recommended replace-
ment: HIP4082IPZ)

HIP4082IPZ (Note) HIP4082IPZ -55 to +125 16 Ld PDIP** (Pb-free) E16.3

*Add “T” suffix for tape and reel.

NOTE: Intersil Pb-free plus anneal products employ special Pb-free material sets; molding compounds/die attach materials and 100% matte tin plate
termination finish, which are RoHS compliant and compatible with both SnPb and Pb-free soldering operations. Intersil Pb-free products are MSL
classified at Pb-free peak reflow temperatures that meet or exceed the Pb-free requirements of IPC/JEDEC J STD-020.
**Pb-free PDIPs can be used for through hole wave solder processing only. They are not intended for use in Reflow solder processing applications.

Pinout
HIP4082
(PDIP, SOIC)
TOP VIEW

BHB 1 16 BHO

BHI 2 15 BHS

BLI 3 14 BLO

ALI 4 13 ALO

DEL 5 12 VDD
VSS 6 11 AHS

AHI 7 10 AHO

DIS 8 9 AHB

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Application Block Diagram

80V

12V

BHO

BHS
LOAD
BHI BLO
BLI
HIP4082

ALI ALO

AHI AHS
AHO

GND GND

Functional Block Diagram

9 AHB BHB 1
DRIVER DRIVER
LEVEL LEVEL
U/V 10 AHO BHO 16 U/V
SHIFT SHIFT

BHI 2
11 AHS BHS 15

AHI 7 TURN-ON TURN-ON

DELAY DELAY

DIS 8

VDD

DETECTOR DRIVER DRIVER

VDD 12 UNDERVOLTAGE TURN-ON TURN-ON
DELAY 13 ALO BLO 14
DELAY
ALI 4

DEL 5

BLI 3

VSS 6

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Typical Application (PWM Mode Switching)

80V

1 BHB BHO 16

12V 2 BHI BHS 15

3 BLI BLO 14 LOAD

PWM
4 ALI ALO 13
INPUT
12V
5 DEL VDD 12
DELAY RESISTOR 6 VSS AHS 11

7 AHI AHO 10

DIS 8 DIS AHB 9

FROM GND
OPTIONAL
OVERCURRENT
LATCH
RDIS

TO OPTIONAL +
CURRENT CONTROLLER OR -
OVERCURRENT LATCH
RSH

GND

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Absolute Maximum Ratings Thermal Information

Supply Voltage, VDD . . . . . . . . . . . . . . . . . . . . . . . . . . . -0.3V to 16V Thermal Resistance JA (°C/W)
Logic I/O Voltages . . . . . . . . . . . . . . . . . . . . . . . -0.3V to VDD +0.3V SOIC Package . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 115
Voltage on AHS, BHS . . . . . -6V (Transient) to 80V (25°C to 150°C) DIP Package . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 90
Voltage on AHS, BHS . . . . . -6V (Transient) to 70V (-55°C to150°C) Maximum Power Dissipation. . . . . . . . . . . . . . . . . . . . . . . . See Curve
Voltage on AHB, BHB . . . . . . . . VAHS, BHS -0.3V to VAHS, BHS +VDD Storage Temperature Range . . . . . . . . . . . . . . . . . .-65°C to +150°C
Voltage on ALO, BLO. . . . . . . . . . . . . . . . . . VSS -0.3V to VDD +0.3V Operating Max. Junction Temperature. . . . . . . . . . . . . . . . . . +150°C
Voltage on AHO, BHO . . . VAHS, BHS -0.3V to VAHB, BHB +0.3V Input Lead Temperature (Soldering 10s) . . . . . . . . . . . . . . . . . . . . +300°C
Current, DEL . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . -5mA to 0mA (For SOIC - Lead Tips Only))
Phase Slew Rate . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 20V/ns
NOTE: All voltages are relative VSS unless otherwise specified.
Operating Conditions
Supply Voltage, VDD . . . . . . . . . . . . . . . . . . . . . . . . . +8.5V to +15V
Voltage on VSS . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . -1.0V to +1.0V
Voltage on AHB, BHB . . . . . . . . VAHS, BHS +7.5V to VAHS, BHS +VDD
Input Current, DEL . . . . . . . . . . . . . . . . . . . . . . . . . -4mA to -100A
CAUTION: Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and operation of the
device at these or any other conditions above those indicated in the operational sections of this specification is not implied.

Electrical Specifications VDD = VAHB = VBHB = 12V, VSS = VAHS = VBHS = 0V, RDEL = 100K

TJ = -55°C
TJ = +25°C TO +150°C

PARAMETER SYMBOL TEST CONDITIONS MIN TYP MAX MIN MAX UNITS
SUPPLY CURRENTS & UNDER VOLTAGE PROTECTION

VDD Quiescent Current IDD All inputs = 0V, RDEL = 100K 1.2 2.3 3.5 0.85 4 mA

All inputs = 0V, RDEL = 10K 2.2 4.0 5.5 1.9 6.0 mA

VDD Operating Current IDDO f = 50kHz, no load 1.5 2.6 4.0 1.1 4.2 mA
50kHz, no load, RDEL = 10k 2.5 4.0 6.4 2.1 6.6 mA

AHB, BHB Off Quiescent Current IAHBL, IBHBL AHI = BHI = 0V 0.5 1.0 1.5 0.4 1.6 mA

AHB, BHB On Quiescent Current IAHBH, IBHBH AHI = BHI = VDD 65 145 240 40 250 A
AHB, BHB Operating Current IAHBO, IBHBO f = 50kHz, CL = 1000pF .65 1.1 1.8 .45 2.0 mA

AHS, BHS Leakage Current IHLK VAHS = VBHS = 80V - - 1.0 - - A

VAHB = VBHB = 96
VDD = Not Connected

VDD Rising Undervoltage Threshold VDDUV+ 6.8 7.6 8.25 6.5 8.5 V

VDD Falling Undervoltage Threshold VDDUV- 6.5 7.1 7.8 6.25 8.1 V
Undervoltage Hysteresis UVHYS 0.17 0.4 0.75 0.15 0.90 V

AHB, BHB Undervoltage Threshold VHBUV Referenced to AHS & BHS 5 6.0 7 4.5 7.5 V

INPUT PINS: ALI, BLI, AHI, BHI, & DIS

Low Level Input Voltage VIL Full Operating Conditions - - 1.0 - 0.8 V

High Level Input Voltage VIH Full Operating Conditions 2.5 - - 2.7 V

Input Voltage Hysteresis - 35 - - - mV

Low Level Input Current IIL VIN = 0V, Full Operating Conditions -145 -100 -60 -150 -50 A

High Level Input Current IIH VIN = 5V, Full Operating Conditions -1 - +1 -10 +10 A

TURN-ON DELAY PIN DEL

Dead Time TDEAD RDEL = 100K 2.5 4.5 8.0 2.0 8.5 s

RDEL = 10K 0.27 0.5 0.75 0.2 0.85 s

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Electrical Specifications VDD = VAHB = VBHB = 12V, VSS = VAHS = VBHS = 0V, RDEL = 100K (Continued)

TJ = -55°C
TJ = +25°C TO +150°C

PARAMETER SYMBOL TEST CONDITIONS MIN TYP MAX MIN MAX UNITS

GATE DRIVER OUTPUT PINS: ALO, BLO, AHO, & BHO

Low Level Output Voltage VOL IOUT = 50mA 0.65 1.1 0.5 1.2 V

High Level Output Voltage VDD-VOH IOUT = -50mA 0.7 1.2 0.5 1.3 V

Peak Pullup Current IO + VOUT = 0V 1.1 1.4 2.5 0.85 2.75 A

Peak Pulldown Current IO- VOUT = 12V 1.0 1.3 2.3 0.75 2.5 A

Switching Specifications VDD = VAHB = VBHB = 12V, VSS = VAHS = VBHS = 0V, RDEL= 100K, CL = 1000pF.

TJ = -55°C TO
TJ = +25°C +150°C

PARAMETER SYMBOL TEST CONDITIONS MIN TYP MAX MIN MAX UNITS

Lower Turn-off Propagation Delay TLPHL - 25 50 - 70 ns

(ALI-ALO, BLI-BLO)

Upper Turn-off Propagation Delay THPHL - 55 80 - 100 ns

(AHI-AHO, BHI-BHO)

Lower Turn-on Propagation Delay TLPLH - 40 85 - 100 ns

(ALI-ALO, BLI-BLO)

Upper Turn-on Propagation Delay THPLH - 75 110 - 150 ns

(AHI-AHO, BHI-BHO)
Rise Time TR - 9 20 - 25 ns

Fall Time TF - 9 20 - 25 ns

Minimum Input Pulse Width TPWIN-ON/OFF 50 - - 50 - ns

Output Pulse Response to 50 ns Input Pulse TPWOUT 63 80 ns

Disable Turn-off Propagation Delay TDISLOW - 50 80 - 90 ns

(DIS - Lower Outputs)

Disable Turn-off Propagation Delay TDISHIGH - 75 100 - 125 ns

(DIS - Upper Outputs)

Disable Turn-on Propagation Delay TDLPLH - 40 70 - 100 ns

(DIS - ALO & BLO)

Disable Turn-on Propagation Delay TDHPLH RDEL = 10K - 1.2 2 - 3 s

(DIS- AHO & BHO)

Refresh Pulse Width (ALO & BLO) TREF-PW 375 580 900 350 950 ns

TRUTH TABLE
INPUT OUTPUT

ALI, BLI AHI, BHI VDDUV VHBUV DIS ALO, BLO AHO, BHO

X X X X 1 0 0
X X 1 X X 0 0

0 X 0 1 0 0 0

1 X 0 X 0 1 0

0 1 0 0 0 0 1

0 0 0 0 0 0 0

NOTE: X signifies that input can be either a “1” or “0”.

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Pin Descriptions
PIN
NUMBER SYMBOL DESCRIPTION

1 BHB B High-side Bootstrap supply. External bootstrap diode and capacitor are required. Connect cathode of bootstrap
diode and positive side of bootstrap capacitor to this pin.

2 BHI B High-side Input. Logic level input that controls BHO driver (Pin 16). BLI (Pin 3) high level input overrides BHI high
level input to prevent half-bridge shoot-through, see Truth Table. DIS (Pin 8) high level input overrides BHI high level
input. The pin can be driven by signal levels of 0V to 15V (no greater than VDD).

3 BLI B Low-side Input. Logic level input that controls BLO driver (Pin 14). If BHI (Pin 2) is driven high or not connected
externally then BLI controls both BLO and BHO drivers, with dead time set by delay currents at DEL (Pin 5). DIS (Pin
8) high level input overrides BLI high level input. The pin can be driven by signal levels of 0V to 15V (no greater than
VDD).

4 ALI A Low-side Input. Logic level input that controls ALO driver (Pin 13). If AHI (Pin 7) is driven high or not connected
externally then ALI controls both ALO and AHO drivers, with dead time set by delay currents at DEL (Pin 5). DIS (Pin
8) high level input overrides ALI high level input. The pin can be driven by signal levels of 0V to 15V (no greater than
VDD).

5 DEL Turn-on DELay. Connect resistor from this pin to VSS to set timing current that defines the dead time between drivers.
All drivers turn-off with no adjustable delay, so the DEL resistor guarantees no shoot-through by delaying the turn-on
of all drivers. The voltage across the DEL resistor is approximately Vdd -2V.
6 VSS Chip negative supply, generally will be ground.

7 AHI A High-side Input. Logic level input that controls AHO driver (Pin 10). ALI (Pin 4) high level input overrides AHI high
level input to prevent half-bridge shoot-through, see Truth Table. DIS (Pin 8) high level input overrides AHI high level
input. The pin can be driven by signal levels of 0V to 15V (no greater than VDD).

8 DIS DISable input. Logic level input that when taken high sets all four outputs low. DIS high overrides all other inputs. When
DIS is taken low the outputs are controlled by the other inputs. The pin can be driven by signal levels of 0V to 15V (no
greater than VDD).

9 AHB A High-side Bootstrap supply. External bootstrap diode and capacitor are required. Connect cathode of bootstrap
diode and positive side of bootstrap capacitor to this pin.

10 AHO A High-side Output. Connect to gate of A High-side power MOSFET.

11 AHS A High-side Source connection. Connect to source of A High-side power MOSFET. Connect negative side of bootstrap
capacitor to this pin.

12 VDD Positive supply to control logic and lower gate drivers. De-couple this pin to VSS (Pin 6).
13 ALO A Low-side Output. Connect to gate of A Low-side power MOSFET.

14 BLO B Low-side Output. Connect to gate of B Low-side power MOSFET.

15 BHS B High-side Source connection. Connect to source of B High-side power MOSFET. Connect negative side of bootstrap
capacitor to this pin.

16 BHO B High-side Output. Connect to gate of B High-side power MOSFET.

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Timing Diagrams
X = A OR B, A AND B HALVES OF BRIDGE CONTROLLER ARE INDEPENDENT
TLPHL THPHL

DIS=0
and UV

XLI

XHI

XLO

XHO

THPLH TLPLH TR TF
(10% - 90%) (10% - 90%)

FIGURE 1. INDEPENDENT MODE

DIS=0
and UV

XLI

XHI = HI OR NOT CONNECTED

XLO

XHO

FIGURE 2. BISTATE MODE

TDLPLH TDIS

TREF-PW
DIS or UV

XLI

XHI

XLO

XHO

TDHPLH

FIGURE 3. DISABLE FUNCTION

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Performance Curves

3.5 16
15 200kHz
3.25
VDD = 16V 14
IDD SUPPLY CURRENT (mA)

IDD SUPPLY CURRENT (mA)

VDD = 15V
3 13
12
2.75
11
2.5 VDD = 12V 10 100kHz
9
2.25 VDD = 10V 8
7 50kHz
2
6
1.75 VDD = 8V
5 10kHz

1.5 4
-60 -40 -20 0 20 40 60 80 100 120 140 -60 -40 -20 0 20 40 60 80 100 120 140
JUNCTION TEMPERATURE (°C) JUNCTION TEMPERATURE (°C)

FIGURE 4. IDD SUPPLY CURRENT vs TEMPERATURE AND FIGURE 5. VDD SUPPLY CURRENT vs TEMPERATURE AND
VDD SUPPLY VOLTAGE SWITCHING FREQUENCY (1000pF LOAD)

8 2
1.925
LOADED, NL BIAS CURRENTS (mA)

7
1.75
PEAK GATE CURRENT (A)
6
1.5
5 SOURCE
ISRC(BIAS)
4 1.25
1000pF LOAD SINK
ISNK(BIAS)
3 1
NO LOAD
2
0.75
1
0.815
0.5
0 8 9 10 11 12 13 14 15
0 50 100 150 200 8 BIAS 15
FREQUENCY (kHz) BIAS SUPPLY VOLTAGE (V) AT 25°C
FIGURE 6. FLOATING (IXHB) BIAS CURRENT vs FIGURE 7. GATE SOURCE/SINK PEAK CURRENT vs BIAS
FREQUENCY AND LOAD SUPPLY VOLTAGE AT 25°C

1.2
1.4

-40°C
SINK/SOURCE CURRENT (A)

1.1 0°C
1.2 -55°C 25°C
NORMALIZED GATE

VDD-VOH (V)

1 1
125°C 150°C

0.8
0.9

0.6
0.8
-75 -50 -25 0 25 50 75 100 125 150 8 9 10 11 12 13 14 15
JUNCTION TEMPERATURE (°C) VDD SUPPLY VOLTAGE (V)

FIGURE 8. GATE CURRENT vs TEMPERATURE, FIGURE 9. VDD-VOH vs BIAS VOLTAGE TEMPERATURE

NORMALIZED TO 25°C

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Performance Curves (Continued)

8
1.4 LOWER U/V RESET

VDD, BIAS SUPPLY VOLTAGE (V)

7.5

1.2
7
-40°C 0°C LOWER U/V SET
-55°C 25°C
VOL (V)

1 6.5

0.8 6
125°C UPPER U/V SET/RESET

150°C 5.5
0.6
5
8 9 10 11 12 13 14 15 -60 -40 -20 0 20 40 60 80 100 120 140 160
VDD SUPPLY VOLTAGE (V) JUNCTION TEMPERATURE (°C)

FIGURE 10. VOL vs BIAS VOLTAGE AND TEMPERATURE FIGURE 11. UNDERVOLTAGE TRIP VOLTAGES vs
TEMPERATURE

100 104

90 DIS TO TURN-ON/OFF TIME (ns)

PROPAGATION DELAYS (ns)

80 UPPER tON DISHTON

1000
70

60 UPPER tOFF

50 LOWER tON
100 DISHTOFF
40

30 LOWER tOFF DISLOFF

DISLTON
20 10
-60 -40 -20 0 20 40 60 80 100 120 140 160 -60 -40 -20 0 20 40 60 80 100 120 140 160
JUNCTION TEMPERATURE (°C) JUNCTION TEMPERATURE (°C)

FIGURE 12. UPPER LOWER TURN-ON / TURN-OFF FIGURE 13. UPPER/LOWER DIS(ABLE) TO TURN-ON/OFF vs
PROPAGATION DELAY vs TEMPERATURE TEMPERATURE (°C)

2 2.5
TOTAL POWER DISSIPATION (W)
LEVEL-SHIFT CURRENT (mA)

1.5 16 PIN DIP

1.5

SOIC
1
1

0.5
QUIESCENT BIAS COMPONENT

0.5 0
0 20 40 60 80 100 -60 -30 0 30 60 90 120 150
SWITCHING FREQUENCY (kHz) AMBIENT TEMPERATURE (°C)

FIGURE 14. FULL BRIDGE LEVEL-SHIFT CURRENT vs FIGURE 15. MAXIMUM POWER DISSIPATION vs AMBIENT
FREQUENCY (kHz) TEMPERATURE

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Performance Curves (Continued)

104
90

VDD = 15V

85
DEAD TIME (ns)

VDD = 12V

VXHS-VSS
1000 VDD = 9V 80

75

100 70
0 10 20 30 40 50 60 70 80 90 100 100 50 0 50 100 150
DEAD TIME RESISTANCE (k) TEMPERATURE (°C)

FIGURE 16. DEAD-TIME vs DEL RESISTANCE AND BIAS FIGURE 17. MAXIMUM OPERATING PEAK AHS/BHS
SUPPLY (VDD) VOLTAGE VOLTAGE vs TEMPERATURE

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Revision History
The revision history provided is for informational purposes only and is believed to be accurate, but not warranted. Please go to the web to make
sure that you have the latest revision.

DATE REVISION CHANGE

September 30, 2015 FN3676.5 Updated the Ordering Information Table on page 2.
Added Revision History and About Intersil sections.

About Intersil
Intersil Corporation is a leading provider of innovative power management and precision analog solutions. The company's products
address some of the largest markets within the industrial and infrastructure, mobile computing and high-end consumer markets.

For the most updated datasheet, application notes, related documentation and related parts, please see the respective product
information page found at www.intersil.com.

You may report errors or suggestions for improving this datasheet by visiting www.intersil.com/ask.

Reliability reports are also available from our website at www.intersil.com/support.

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Dual-In-Line Plastic Packages (PDIP)

N
E16.3 (JEDEC MS-001-BB ISSUE D)
E1 16 LEAD DUAL-IN-LINE PLASTIC PACKAGE
INDEX
AREA 1 2 3 N/2
INCHES MILLIMETERS
-B- SYMBOL MIN MAX MIN MAX NOTES
-A- A - 0.210 - 5.33 4
D E
BASE A1 0.015 - 0.39 - 4
PLANE A2
-C- A A2 0.115 0.195 2.93 4.95 -
SEATING
PLANE B 0.014 0.022 0.356 0.558 -
L C
L
B1 0.045 0.070 1.15 1.77 8, 10
D1 A1 eA
D1
B1 e C 0.008 0.014 0.204 0.355 -
eC C
B D 0.735 0.775 18.66 19.68 5
eB
0.010 (0.25) M C A B S
D1 0.005 - 0.13 - 5
NOTES: E 0.300 0.325 7.62 8.25 6
1. Controlling Dimensions: INCH. In case of conflict between English and E1 0.240 0.280 6.10 7.11 5
Metric dimensions, the inch dimensions control.
e 0.100 BSC 2.54 BSC -
2. Dimensioning and tolerancing per ANSI Y14.5M-1982.
3. Symbols are defined in the “MO Series Symbol List” in Section 2.2 of eA 0.300 BSC 7.62 BSC 6
Publication No. 95. eB - 0.430 - 10.92 7
4. Dimensions A, A1 and L are measured with the package seated in JE- L 0.115 0.150 2.93 3.81 4
DEC seating plane gauge GS-3.
N 16 16 9
5. D, D1, and E1 dimensions do not include mold flash or protrusions.
Mold flash or protrusions shall not exceed 0.010 inch (0.25mm). Rev. 0 12/93
6. E and eA are measured with the leads constrained to be perpendic-
ular to datum -C- .
7. eB and eC are measured at the lead tips with the leads unconstrained.
eC must be zero or greater.
8. B1 maximum dimensions do not include dambar protrusions. Dambar
protrusions shall not exceed 0.010 inch (0.25mm).
9. N is the maximum number of terminal positions.
10. Corner leads (1, N, N/2 and N/2 + 1) for E8.3, E16.3, E18.3, E28.3,
E42.6 will have a B1 dimension of 0.030 - 0.045 inch (0.76 - 1.14mm).

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Small Outline Plastic Packages (SOIC)

N M16.15 (JEDEC MS-012-AC ISSUE C)

INDEX 16 LEAD NARROW BODY SMALL OUTLINE PLASTIC PACKAGE
AREA H 0.25(0.010) M B M
E INCHES MILLIMETERS
SYMBOL MIN MAX MIN MAX NOTES
-B-
A 0.0532 0.0688 1.35 1.75 -
1 2 3 A1 0.0040 0.0098 0.10 0.25 -
L
B 0.013 0.020 0.33 0.51 9
SEATING PLANE
C 0.0075 0.0098 0.19 0.25 -
-A-
D A h x 45° D 0.3859 0.3937 9.80 10.00 3
E 0.1497 0.1574 3.80 4.00 4
-C- e 0.050 BSC 1.27 BSC -

e H 0.2284 0.2440 5.80 6.20 -
A1
C
h 0.0099 0.0196 0.25 0.50 5
B 0.10(0.004)
L 0.016 0.050 0.40 1.27 6
0.25(0.010) M C A M B S
N 16 16 7
NOTES:  0° 8° 0° 8° -
1. Symbols are defined in the “MO Series Symbol List” in Section 2.2 of Rev. 1 6/05
Publication Number 95.
2. Dimensioning and tolerancing per ANSI Y14.5M-1982.
3. Dimension “D” does not include mold flash, protrusions or gate burrs.
Mold flash, protrusion and gate burrs shall not exceed 0.15mm (0.006
inch) per side.
4. Dimension “E” does not include interlead flash or protrusions. Interlead
flash and protrusions shall not exceed 0.25mm (0.010 inch) per side.
5. The chamfer on the body is optional. If it is not present, a visual index
feature must be located within the crosshatched area.
6. “L” is the length of terminal for soldering to a substrate.
7. “N” is the number of terminal positions.
8. Terminal numbers are shown for reference only.
9. The lead width “B”, as measured 0.36mm (0.014 inch) or greater above
the seating plane, shall not exceed a maximum value of 0.61mm
(0.024 inch).
10. Controlling dimension: MILLIMETER. Converted inch dimensions are
not necessarily exact.

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Intersil products are sold by description only. Intersil may modify the circuit design and/or specifications of products at any time without notice, provided that such
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FN3676 Rev 5.00 Page 14 of 14

September 30, 2015