Shenzhen Tuofeng Semiconductor Technology Co.

, Ltd
Si2310
N-CHANNEL ENHANCEMENT MODE
POWER MOSFET

▼ Simple Drive Requirement BVDSS 60V

▼ Small Package Outline D RDS(ON) 90mΩ
▼ Surface Mount Device ID 3A

S
SOT-23 G
Description
The MOSFETs utilized advanced processing techniques to
achieve the lowest possible on-resistance, extremely efficient and
cost-effectiveness device. D

The SOT-23 package is universally used for all commercial-industrial

applications.
G
S

Absolute Maximum Ratings

Symbol Parameter Rating Units
VDS Drain-Source Voltage 60 V
VGS Gate-Source Voltage ±20 V

ID@TA=25℃ Continuous Drain Current 3, VGS @ 4.5V 3 A

IDM Pulsed Drain Current1,2 10 A

PD@TA=25℃ Total Power Dissipation 1.38 W
Linear Derating Factor 0.01 W/℃
TSTG Storage Temperature Range -55 to 150 ℃
TJ Operating Junction Temperature Range -55 to 150 ℃

Thermal Data
Symbol Parameter Value Unit
3
Rthj-a Thermal Resistance Junction-ambient Max. 90 ℃/W

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 Shenzhen Tuofeng Semiconductor Technology Co., Ltd
Si2310

Electrical Characteristics@Tj=25oC(unless otherwise specified)

Symbol Parameter Test Conditions Min. Typ. Max. Units
BVDSS Drain-Source Breakdown Voltage VGS=0V, ID=250uA 60 - - V
ΔBVDSS/ΔTj Breakdown Voltage Temperature Coefficient Reference to 25℃, ID=1mA - 0.05 - V/℃
RDS(ON) Static Drain-Source On-Resistance VGS=10V, ID=3A - - 90 mΩ
VGS=4.5V, ID=2A - - 120 mΩ
VGS(th) Gate Threshold Voltage VDS=VGS, ID=250uA 1 - 2 V
gfs Forward Transconductance VDS=5V, ID=3A - 5 - S

IDSS Drain-Source Leakage Current (Tj=25oC) V DS=48V, VGS=0V - - 10 uA

IGSS Gate-Source Leakage VGS=±20V - - ±100 nA

2
Qg Total Gate Charge ID=3A - 6 10 nC
Qgs Gate-Source Charge VDS=48V - 1.6 - nC
Qgd Gate-Drain ("Miller") Charge VGS=4.5V - 3 - nC
2
td(on) Turn-on Delay Time VDS=30V - 6 - ns
tr Rise Time ID=1A - 5 - ns
td(off) Turn-off Delay Time RG=3.3Ω,VGS=10V - 16 - ns
tf Fall Time RD=30Ω - 3 - ns
Ciss Input Capacitance VGS=0V - 490 780 pF
Coss Output Capacitance VDS=25V - 55 - pF
Crss Reverse Transfer Capacitance f=1.0MHz - 40 - pF

Source-Drain Diode
Symbol Parameter Test Conditions Min. Typ. Max. Units
2
VSD Forward On Voltage IS=1.2A, VGS=0V - - 1.2 V
trr Reverse Recovery Time IS=3A, VGS=0V, - 25 - ns
Qrr Reverse Recovery Charge dI/dt=100A/µs - 26 - nC

Notes:
1.Pulse width limited by Max. junction temperature.
2.Pulse width <300us , duty cycle <2%.
3.Surface mounted on 1 in2 copper pad of FR4 board ; 270℃/W when mounted on min. copper pad.

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 Shenzhen Tuofeng Semiconductor Technology Co., Ltd
Si2310

10 10

10V
o
T A = 150 C 10V
T A =25 o C 7.0V
8
7.0V 8
5.0V 5.0V
4.5V 4.5V
ID , Drain Current (A)

ID , Drain Current (A)

6 6
V G = 3.0 V
V G = 3.0 V

4 4

2 2

0 0
0 1 2 3 4 5 0 1 2 3 4 5

V DS , Drain-to-Source Voltage (V) V DS , Drain-to-Source Voltage (V)

Fig 1. Typical Output Characteristics Fig 2. Typical Output Characteristics

105 2.0

ID=2A 1.8 ID=3A

99 o V G =10V
T A =25 C
1.6
Normalized R DS(ON)

93
RDS(ON) (mΩ )

1.4

1.2
87

1.0

81

0.8

75 0.6
2 4 6 8 10 -50 0 50 100 150

o
V GS , Gate-to-Source Voltage (V) T j , Junction Temperature ( C)

Fig 3. On-Resistance v.s. Gate Voltage Fig 4. Normalized On-Resistance

v.s. Junction Temperature
3 1.4

1.2
Normalized VGS(th) (V)

1.0
IS(A)

T j =150 o C T j =25 o C
0.8

0.6

0 0.4
0 0.2 0.4 0.6 0.8 1 1.2 -50 0 50 100 150

V SD , Source-to-Drain Voltage (V) o

T j , Junction Temperature ( C)

Fig 5. Forward Characteristic of Fig 6. Gate Threshold Voltage v.s.

Reverse Diode Junction Temperature

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 Shenzhen Tuofeng Semiconductor Technology Co., Ltd
Si2310
f=1.0MHz
14 1000

ID=3A
12
C iss
VGS , Gate to Source Voltage (V)

V DS = 30 V
10
V DS =38V
V DS =48V

C (pF)
8

100

C oss
4 C rss

0 10
0 3 6 9 12 15 1 5 9 13 17 21 25 29

Q G , Total Gate Charge (nC) V DS , Drain-to-Source Voltage (V)

Fig 7. Gate Charge Characteristics Fig 8. Typical Capacitance Characteristics

100.000 1

Duty factor=0.5
Normalized Thermal Response (Rthja)

10.000 0.2

100us 0.1 0.1

0.05
1.000
1ms
ID (A)

0.01
PDM
10ms t
0.100
0.01 Single Pulse T

100ms Duty factor = t/T

Peak Tj = PDM x Rthja + Ta

0.010
T A =25 o C 1s ℃ /W
Rthja = 270℃

Single Pulse DC

0.001
0.0001 0.001 0.01 0.1 1 10 100 1000
0.001
0.1 1 10 100 1000
t , Pulse Width (s)
V DS , Drain-to-Source Voltage (V)

Fig 9. Maximum Safe Operating Area Fig 10. Effective Transient Thermal Impedance

VDS VG
90%
QG
4.5V

QGS QGD

10%
VGS

td(on) tr td(off) tf Charge Q

Fig 11. Switching Time Waveform Fig 12. Gate Charge Waveform