MBR1535CT, MBR1545CT

MBR1545CT is a Preferred Device

SWITCHMODE
Power Rectifier
. . . using the Schottky Barrier principle with a platinum barrier
metal. These state-of-the-art devices have the following features:
• Center-Tap Configuration http://onsemi.com
• Guardring for Stress Protection
• Low Forward Voltage
SCHOTTKY BARRIER
• 150°C Operating Junction Temperature
RECTIFIERS
• Epoxy Meets UL94, VO at 1/8″
15 AMPERES
Mechanical Characteristics:
• Case: Epoxy, Molded 35 and 45 VOLTS
• Weight: 1.9 grams (approximately)
• Finish: All External Surfaces Corrosion Resistant and Terminal 1
2, 4
Leads are Readily Solderable
3
• Lead Temperature for Soldering Purposes:
260°C Max. for 10 Seconds
• Shipped 50 units per plastic tube
4

• Marking: B1535, B1545

MAXIMUM RATINGS
Rating Symbol Value Unit
Peak Repetitive Reverse Voltage VRRM V
Working Peak Reverse Voltage VRWM
1
DC Blocking Volta MBR1535CT VR 35 2
MBR1545CT 45 3
TO-220AB
Average Rectified Forward Current IF(AV) A
CASE 221A
(Rated VR, TC = 105°C) Per Diode 7.5
PLASTIC
Per Device 15
Peak Repetitive Forward Current IFRM 15 A MARKING DIAGRAM
(Rated VR, Square Wave,
20 kHz, TC = 105°C) Per Diode
Non-Repetitive Peak Surge Current IFSM 150 A
(Surge Applied at Rated Load YY = Year
Conditions Halfwave, Single YY WW WW = Work Week
Phase, 60 Hz) B15x5 B15x5 = Device Code
AKA x = 3 or 4
Peak Repetitive Reverse Surge IRRM 1.0 A AKA = Diode Polarity
Current (2.0 s, 1.0 kHz)
Storage Temperature Range Tstg -65 to +175 °C
Operating Junction Temperature TJ -65 to +150 °C
Voltage Rate of Change (Rated VR) dv/dt 1000 V/s ORDERING INFORMATION

Device Package Shipping

MBR1535CT TO-220 50 Units/Rail

MBR1545CT TO-220 50 Units/Rail

Preferred devices are recommended choices for future use

and best overall value.

 Semiconductor Components Industries, LLC, 2001 235 Publication Order Number:

May, 2001 - Rev. 3 MBR1535CT/D
 MBR1535CT, MBR1545CT

THERMAL CHARACTERISTICS PER DIODE

Characteristic Symbol Value Unit
Maximum Thermal Resistance, Junction to Case RθJC 3.0 °C/W
Maximum Thermal Resistance, Junction to Ambient RθJA 60 °C/W

ELECTRICAL CHARACTERISTICS PER DIODE

Maximum Instantaneous Forward Voltage (Note 1.) VF Volts
(iF = 7.5 Amps, TC = 125°C) 0.57
(iF = 15 Amps, TC = 125°C) 0.72
(iF = 15 Amps, TC = 25°C) 0.84
Maximum Instantaneous Reverse Current (Note 1.) iR mA
(Rated dc Voltage, TC = 125°C) 15
(Rated dc Voltage, TC = 25°C) 0.1
1. Pulse Test: Pulse Width = 300 µs, Duty Cycle ≤ 2.0%

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 MBR1535CT, MBR1545CT

i , INSTANTANEOUS FORWARD CURRENT (AMPS)

50 100
30 TJ = 150°C
20

I , REVERSE CURRENT (mA)

TJ = 125°C 10
125°C
10
100°C
7.0 75°C 1.0
5.0 75°C

3.0 0.1
25°C
2.0

R
0.01 25°C
1.0
0.7
F

0.5 0.001
0.2 0.4 0.6 0.8 1.0 1.2 0 10 20 30 40 50

iF, INSTANTANEOUS FORWARD VOLTAGE (VOLTS) VR, REVERSE VOLTAGE (VOLTS)

Figure 1. Typical Forward Voltage Figure 2. Typical Reverse Current
, AVERAGE FORWARD CURRENT (AMPS)

16 16

, AVERAGE FORWARD CURRENT (AMPS)

RATED VOLTAGE APPLIED RATED VOLTAGE APPLIED
14 14
dc
R
JC = 3.0° C/W R
JA = 16° C/W
12 12
R
JA = 60° C/W
10 10 (NO HEAT SINK)
dc
8.0 8.0
180° SQUARE WAVE 180° SQUARE WAVE
6.0 6.0
dc
4.0 4.0

2.0
F (AV)

2.0
F (AV)

0 0
I

100 110 120 130 140 150 0 20 40 60 80 100 120 140 160
TC, CASE TEMPERATURE (C°) TA, AMBIENT TEMPERATURE (°C)
Figure 3. Current Derating, Case Figure 4. Current Derating, Ambient
, AVERAGE FORWARD POWER DISSIPATION (WATTS)

14
(RESISTIVE LOAD) 180°C
12 SQUARE
I PK WAVE

10 I AV dc

8.0

6.0

4.0

2.0

0
F (AV)

0 2.0 4.0 6.0 8.0 10 12 14 16 18 20

P

IF(AV), AVERAGE FORWARD CURRENT (AMPS)

Figure 5. Power Dissipation

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