FDMS7698 N-Channel PowerTrench® MOSFET

May 2011
FDMS7698
N-Channel PowerTrench® MOSFET
30 V, 22 A, 10 mΩ
Features General Description
„ Max rDS(on) = 10 mΩ at VGS = 10 V, ID = 13.5 A This N-Channel MOSFET has been designed specifically to
„ Max rDS(on) = 15 mΩ at VGS = 4.5 V, ID = 11.0 A improve the overall efficiency and to minimize switch node
ringing of DC/DC converters using either synchronous or
„ Advanced Package and Silicon combination for low rDS(on) conventional switching PWM controllers. It has been optimized
and high efficiency for low gate charge, low rDS(on), fast switching speed and body
„ Next generation enhanced body diode technology, diode reverse recovery performance.
engineered for soft recovery
Applications
„ MSL1 robust package design
„ IMVP Vcore Switching for Notebook
„ 100% UIL tested
„ VRM Vcore Switching for Desktop and server
„ RoHS Compliant
„ OringFET / Load Switching
„ DC-DC Conversion

Top Bottom
Pin 1
S D 5 4 G
S
S
G D 6 3 S

D 7 2 S
D
D D 8 1 S
D
D

Power 56

MOSFET Maximum Ratings TA = 25 °C unless otherwise noted

Symbol Parameter Ratings Units
VDS Drain to Source Voltage 30 V
VGS Gate to Source Voltage (Note 4) ±20 V
Drain Current -Continuous (Package limited) TC = 25 °C 22
-Continuous (Silicon limited) TC = 25 °C 44
ID A
-Continuous TA = 25 °C (Note 1a) 13.5
-Pulsed 50
EAS Single Pulse Avalanche Energy (Note 3) 29 mJ
Power Dissipation TC = 25 °C 29
PD W
Power Dissipation TA = 25 °C (Note 1a) 2.5
TJ, TSTG Operating and Storage Junction Temperature Range -55 to +150 °C

Thermal Characteristics
RθJC Thermal Resistance, Junction to Case 4.4
°C/W
RθJA Thermal Resistance, Junction to Ambient (Note 1a) 50

Package Marking and Ordering Information

Device Marking Device Package Reel Size Tape Width Quantity
FDMS7698 FDMS7698 Power 56 13 ’’ 12 mm 3000 units

©2011 Fairchild Semiconductor Corporation 1 www.fairchildsemi.com

FDMS7698 Rev.C1
 FDMS7698 N-Channel PowerTrench® MOSFET
Electrical Characteristics TJ = 25 °C unless otherwise noted
Symbol Parameter Test Conditions Min Typ Max Units

Off Characteristics
BVDSS Drain to Source Breakdown Voltage ID = 250 μA, VGS = 0 V 30 V
ΔBVDSS Breakdown Voltage Temperature
ID = 250 μA, referenced to 25 °C 16 mV/°C
ΔTJ Coefficient
IDSS Zero Gate Voltage Drain Current VDS = 24 V, VGS = 0 V 1 μA
IGSS Gate to Source Leakage Current, Forward VGS = 20 V, VDS = 0 V 100 nA

On Characteristics
VGS(th) Gate to Source Threshold Voltage VGS = VDS, ID = 250 μA 1.0 2.0 3.0 V
ΔVGS(th) Gate to Source Threshold Voltage
ID = 250 μA, referenced to 25 °C -6 mV/°C
ΔTJ Temperature Coefficient
VGS = 10 V, ID = 13.5 A 8.1 10
VGS = 4.5 V, ID = 11.0 A 12.2 15
rDS(on) Static Drain to Source On Resistance mΩ
VGS = 10 V, ID = 13.5 A
11 14
TJ = 125 °C
gFS Forward Transconductance VDS = 5 V, ID = 13.5 A 53 S

Dynamic Characteristics
Ciss Input Capacitance 1205 1605 pF
VDS = 15 V, VGS = 0 V,
Coss Output Capacitance 370 495 pF
f = 1 MHz
Crss Reverse Transfer Capacitance 35 55 pF
Rg Gate Resistance 0.3 1.6 3.2 Ω

Switching Characteristics
td(on) Turn-On Delay Time 9 18 ns
tr Rise Time VDD = 15 V, ID = 13.5 A, 3 10 ns
td(off) Turn-Off Delay Time VGS = 10 V, RGEN = 6 Ω 20 36 ns
tf Fall Time 3 10 ns
Qg Total Gate Charge VGS = 0 V to 10 V 17 24 nC
Qg Total Gate Charge VGS = 0 V to 4.5 V VDD = 15 V, 7.5 12 nC
Qgs Gate to Source Charge ID = 13.5 A 3.9 nC
Qgd Gate to Drain “Miller” Charge 2.0 nC

Drain-Source Diode Characteristics

VGS = 0 V, IS = 2.1 A (Note 2) 0.75 1.1
VSD Source to Drain Diode Forward Voltage V
VGS = 0 V, IS = 13.5 A (Note 2) 0.86 1.2
trr Reverse Recovery Time 24 38 ns
IF = 13.5 A, di/dt = 100 A/μs
Qrr Reverse Recovery Charge 8 15 nC
trr Reverse Recovery Time 19 34 ns
IF = 13.5 A, di/dt = 300 A/μs
Qrr Reverse Recovery Charge 13 24 nC
Notes:
1. RθJA is determined with the device mounted on a 1 in2 pad 2 oz copper pad on a 1.5 x 1.5 in. board of FR-4 material. RθJC is guaranteed by design while RθCA is determined by
the user's board design.

b) 125 °C/W when mounted

a) 50 °C/W when mounted on a
on a minimum pad of 2 oz copper.
1 in2 pad of 2 oz copper

2. Pulse Test: Pulse Width < 300 μs, Duty cycle < 2.0%.
3. EAS of 29 mJ is based on starting TJ = 25 °C, L = 0.3 mH, IAS = 14 A, VDD = 27 V, VGS = 10 V.
4. As an N-ch device, the negative Vgs rating is for low duty cycle pulse occurrence only. No continuous rating is implied.

©2011 Fairchild Semiconductor Corporation 2 www.fairchildsemi.com

FDMS7698 Rev.C1
 FDMS7698 N-Channel PowerTrench® MOSFET
Typical Characteristics TJ = 25 °C unless otherwise noted
50 5
VGS = 10 V

DRAIN TO SOURCE ON-RESISTANCE

VGS = 3.5 V
VGS = 6 V VGS = 4 V
ID, DRAIN CURRENT (A)

40 4
VGS = 4.5 V
VGS = 4 V

NORMALIZED
30 3

VGS = 4.5 V
20 2 VGS = 6 V

10 VGS = 3.5 V 1
PULSE DURATION = 80 μs PULSE DURATION = 80 μs VGS = 10 V
DUTY CYCLE = 0.5% MAX DUTY CYCLE = 0.5% MAX
0 0
0.0 0.5 1.0 1.5 2.0 2.5 0 10 20 30 40 50
VDS, DRAIN TO SOURCE VOLTAGE (V) ID, DRAIN CURRENT (A)

Figure 1. On-Region Characteristics Figure 2. Normalized On-Resistance

vs Drain Current and Gate Voltage

1.6 30
PULSE DURATION = 80 μs
DRAIN TO SOURCE ON-RESISTANCE

ID = 13.5 A

SOURCE ON-RESISTANCE (mΩ)

ID = 13.5 A DUTY CYCLE = 0.5% MAX
1.4 VGS = 10 V rDS(on), DRAIN TO 25
NORMALIZED

1.2 20

TJ = 125 oC
1.0 15

0.8 10
TJ = 25 oC

0.6 5
-75 -50 -25 0 25 50 75 100 125 150 2 4 6 8 10
TJ, JUNCTION TEMPERATURE (oC) VGS, GATE TO SOURCE VOLTAGE (V)

Figure 3. Normalized On- Resistance Figure 4. On-Resistance vs Gate to

vs Junction Temperature Source Voltage

50 50
PULSE DURATION = 80 μs VGS = 0 V
IS, REVERSE DRAIN CURRENT (A)

DUTY CYCLE = 0.5% MAX

40
ID, DRAIN CURRENT (A)

VDS = 5 V 10
TJ = 150 oC
30
TJ = 25 oC
TJ = 150 oC
20
1
TJ = 25 oC TJ = -55 oC
10
TJ = -55 oC

0 0.1
1 2 3 4 5 0.0 0.2 0.4 0.6 0.8 1.0 1.2
VGS, GATE TO SOURCE VOLTAGE (V) VSD, BODY DIODE FORWARD VOLTAGE (V)

Figure 5. Transfer Characteristics Figure 6. Source to Drain Diode

Forward Voltage vs Source Current

©2011 Fairchild Semiconductor Corporation 3 www.fairchildsemi.com

FDMS7698 Rev.C1
 FDMS7698 N-Channel PowerTrench® MOSFET
Typical Characteristics TJ = 25 °C unless otherwise noted

10 2000
VGS, GATE TO SOURCE VOLTAGE (V)

ID = 13.5 A VDD = 10 V
1000 Ciss
8

CAPACITANCE (pF)
VDD =15 V

6 Coss
VDD = 20 V
100
4

2
f = 1 MHz Crss
VGS = 0 V
0 10
0 3 6 9 12 15 18 0.1 1 10 30
Qg, GATE CHARGE (nC) VDS, DRAIN TO SOURCE VOLTAGE (V)

Figure 7. Gate Charge Characteristics Figure 8. Capacitance vs Drain

to Source Voltage

25 50
o
RθJC = 4.4 C/W
IAS, AVALANCHE CURRENT (A)

ID, DRAIN CURRENT (A)

20 40
VGS = 10 V
TJ = 25 oC
15 30
VGS = 4.5 V
TJ = 125 oC
TJ = 100 oC
10 20

Limited by Package
5 10

1 0
0.01 0.1 1 10 40 25 50 75 100 125 150
tAV, TIME IN AVALANCHE (ms) o
TC, CASE TEMPERATURE ( C)
Figure 9. Unclamped Inductive Figure 10. Maximum Continuous Drain
Switching Capability Current vs Case Temperature

100 1000
P(PK), PEAK TRANSIENT POWER (W)

SINGLE PULSE
RθJA = 125 oC/W
ID, DRAIN CURRENT (A)

100 us
10 TA = 25 oC
100
1 ms

1 THIS AREA IS 10 ms
LIMITED BY rDS(on) 100 ms
10
SINGLE PULSE 1s
0.1 TJ = MAX RATED
10 s
RθJA = 125 oC/W
DC
o
TA = 25 C 1
0.01 0.5 -4 -3 -2 -1
0.01 0.1 1 10 100200 10 10 10 10 1 10 100 1000
VDS, DRAIN to SOURCE VOLTAGE (V) t, PULSE WIDTH (sec)

Figure 11. Forward Bias Safe Figure 12. Single Pulse Maximum
Operating Area Power Dissipation

©2011 Fairchild Semiconductor Corporation 4 www.fairchildsemi.com

FDMS7698 Rev.C1
 FDMS7698 N-Channel PowerTrench® MOSFET
Typical Characteristics TJ = 25 °C unless otherwise noted
2
DUTY CYCLE-DESCENDING ORDER
1
NORMALIZED THERMAL

D = 0.5
0.2
IMPEDANCE, ZθJA

0.1
0.1 0.05 PDM
0.02
0.01
t1

0.01 t2
SINGLE PULSE NOTES:
o DUTY FACTOR: D = t1/t2
RθJA = 125 C/W PEAK TJ = PDM x ZθJA x RθJA + TA

0.001 -4 -3 -2 -1
10 10 10 10 1 10 100 1000
t, RECTANGULAR PULSE DURATION (sec)
Figure 13. Junction-to-Ambient Transient Thermal Response Curve

©2011 Fairchild Semiconductor Corporation 5 www.fairchildsemi.com

FDMS7698 Rev.C1
 FDMS7698 N-Channel PowerTrench® MOSFET
Dimensional Outline and Pad Layout

©2011 Fairchild Semiconductor Corporation 6 www.fairchildsemi.com

FDMS7698 Rev.C1
 FDMS7698 N-Channel PowerTrench® MOSFET
TRADEMARKS
The following includes registered and unregistered trademarks and service marks, owned by Fairchild Semiconductor and/or its global subsidiaries, and is not
intended to be an exhaustive list of all such trademarks.
AccuPower™ FPS™ Power-SPM™ The Power Franchise®
Auto-SPM™ F-PFS™ PowerTrench® The Right Technology for Your Success™
AX-CAP™* FRFET® PowerXS™ ®
® SM
BitSiC Global Power Resource Programmable Active Droop™
Build it Now™ Green FPS™ QFET ® tm

TinyBoost™
CorePLUS™ Green FPS™ e-Series™ QS™
TinyBuck™
CorePOWER™ Gmax™ Quiet Series™
TinyCalc™
CROSSVOLT™ GTO™ RapidConfigure™
™ TinyLogic®
CTL™ IntelliMAX™
TINYOPTO™
Current Transfer Logic™ ISOPLANAR™
TinyPower™
DEUXPEED® MegaBuck™ Saving our world, 1mW/W/kW at a time™
TinyPWM™
Dual Cool™ MICROCOUPLER™ SignalWise™
TinyWire™
EcoSPARK® MicroFET™ SmartMax™
TranSiC®
EfficentMax™ MicroPak™ SMART START™
® TriFault Detect™
ESBC™ MicroPak2™ SPM
TRUECURRENT®*
® MillerDrive™ STEALTH™
® μSerDes™
tm MotionMax™ SuperFET
Fairchild® Motion-SPM™ SuperSOT™-3
Fairchild Semiconductor® mWSaver™ SuperSOT™-6
OptiHiT™ SuperSOT™-8 UHC®
FACT Quiet Series™
OPTOLOGIC ®
SupreMOS® Ultra FRFET™
FACT®
OPTOPLANAR® SyncFET™ UniFET™
FAST®
® Sync-Lock™ VCX™
FastvCore™
®* VisualMax™
FETBench™ tm

XS™
FlashWriter® * PDP SPM™

*Trademarks of System General Corporation, used under license by Fairchild Semiconductor.

DISCLAIMER
FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE
RELIABILITY, FUNCTION, OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY
PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS.
THESE SPECIFICATIONS DO NOT EXPAND THE TERMS OF FAIRCHILD’S WORLDWIDE TERMS AND CONDITIONS, SPECIFICALLY THE WARRANTY
THEREIN, WHICH COVERS THESE PRODUCTS.

LIFE SUPPORT POLICY

FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE
EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION.
As used here in:
1. Life support devices or systems are devices or systems which, (a) are 2. A critical component in any component of a life support, device, or
intended for surgical implant into the body or (b) support or sustain life, system whose failure to perform can be reasonably expected to cause
and (c) whose failure to perform when properly used in accordance with the failure of the life support device or system, or to affect its safety or
instructions for use provided in the labeling, can be reasonably effectiveness.
expected to result in a significant injury of the user.

ANTI-COUNTERFEITING POLICY
Fairchild Semiconductor Corporation’s Anti-Counterfeiting Policy. Fairchild’s Anti-Counterfeiting Policy is also stated on our external website,
www.Fairchildsemi.com, under Sales Support.
Counterfeiting of semiconductor parts is a growing problem in the industry. All manufactures of semiconductor products are experiencing counterfeiting of their
parts. Customers who inadvertently purchase counterfeit parts experience many problems such as loss of brand reputation, substandard performance, failed
application, and increased cost of production and manufacturing delays. Fairchild is taking strong measures to protect ourselves and our customers from the
proliferation of counterfeit parts. Fairchild strongly encourages customers to purchase Fairchild parts either directly from Fairchild or from Authorized Fairchild
Distributors who are listed by country on our web page cited above. Products customers buy either from Fairchild directly or from Authorized Fairchild
Distributors are genuine parts, have full traceability, meet Fairchild’s quality standards for handing and storage and provide access to Fairchild’s full range of
up-to-date technical and product information. Fairchild and our Authorized Distributors will stand behind all warranties and will appropriately address and
warranty issues that may arise. Fairchild will not provide any warranty coverage or other assistance for parts bought from Unauthorized Sources. Fairchild is
committed to combat this global problem and encourage our customers to do their part in stopping this practice by buying direct or from authorized distributors.

PRODUCT STATUS DEFINITIONS

Definition of Terms
Datasheet Identification Product Status Definition
Datasheet contains the design specifications for product development. Specifications
Advance Information Formative / In Design
may change in any manner without notice.

Datasheet contains preliminary data; supplementary data will be published at a later

Preliminary First Production date. Fairchild Semiconductor reserves the right to make changes at any time without
notice to improve design.

Datasheet contains final specifications. Fairchild Semiconductor reserves the right to

No Identification Needed Full Production
make changes at any time without notice to improve the design.

Obsolete Not In Production Datasheet contains specifications on a product that is discontinued by Fairchild
Semiconductor. The datasheet is for reference information only.
Rev. I54
©2011 Fairchild Semiconductor Corporation 7 www.fairchildsemi.com
FDMS7698 Rev.C1