Kertas Kerja /work Sheet BBV 30303-Electronic 2
Kertas Kerja /work Sheet BBV 30303-Electronic 2
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Course : ELECTRONIC 2
Course Code : BBV 30303
Experiment : 03
Experiment Tittle: DC AND AC BIPOLAR JUNCTION TRANSISTOR
ANALYSIS
Programme : BBE
EQUIPMENT LIST
1) Multisim software
2) Lab Sheet
THEORY:
Bipolar Junction Transistor
A Bipolar Junction Transistor, or BJT, is a solid-state device in which the current
flow between two terminals (the collector and the emitter) is controlled by the amount
of current that flows through a third terminal (the base).
BJTs can control the collector current via the current applied to the base. Typically,
the collector current is the base current times the DC current gain (h FE)*. It is this gain
that allows bipolar transistors to be used as amplifiers. One of the popular amplifier
is common emitter.
PROCEDURES
DC ANALYSIS
1. Figure 1 shows a voltage divider configuration. Calculate the output voltage (Vout),
base voltage (VB) and emitter voltage (VE), IC, IB and IE and record the result in table
1. Shows all the calculation clearly.
2. By using Multisim software, construct the circuit with using the correct parameter and
simulate the output at the Vout, VB, VE, IE, IC and IE.
AC ANALYSIS
1. Calculate the gain (AV) of figure 1 without capacitor C2. Record the result in Table 1.
2. Using Multisim software, determine the voltage gain (A V) for the network of Figure 1
without capacitor C2. Use oscilloscope to display the input and output waveform.
Attach the output waveform in table 1. Set frequency = 10 kHz and Vs = 1 mV.
3. Repeat procedure no 1 with calculate the gain (AV) of figure 1 with capacitor C2.
Record the result in Table 1.
4. Repeat procedure no 2 using Multisim software, determine the voltage gain (AV) for
the network of Figure 1 with capacitor C2. Use oscilloscope to display the input and
output waveform. Attach the output waveform in table 1. Set frequency = 10 kHz and
Vs = 1 mV.
V1 R1 R3
56kΩ 6.8kΩ
22V
VCC
VOUT
VB
C1 Q1 VE
2N2222
Vs 10µF R2
C2
1mVrms 8.2kΩ
20µF
60Hz
0° R4
1.5kΩ
Figure 1
RESULT:
Table 1
Parameter Calculation Measurement (Multisim)
VB R2
VB= ×VCC
R 2+ R 1
8.2 K
¿ ×22
8.2 K +56 K
¿ 2.81 V
VE VE=VB−VBE
¿ 2.81−0.7
¿ 2.11 V
VC = Vout VC=VCC−ICRC
¿ 12.412V
VE
IE=
IE ℜ
2.11
¿
1.5 K
¿ 1.41 mA
IC
IB=¿
IB β
1.41mA
¿
154
= 9.2 µA
IC IC=IE
= 1.41mA
−RC
Av= ℜ+ ℜ
Av (without
C2)
−6.8 K
¿
18.44+1.5 k
¿−4.48
−RC
AV = ℜ
Av (with
C2) −6.8 k
¿
18.44
= -368.76
DISCUSSION:
From this experiment, the calculation of the value almost the same with the measurement.
Where, the value of VB is 2.8V while VC is 12.41V and VE is 2.13V in calculation while
in measurement result the value of VB is 2.76V while VC is 12.36V and VE is 2.137V.
Then, the current size for IB had a slight difference because the calculation is IB = 9.2A
but the measurement was 6.918A. Thus, the current for IC and IE is the same value of
1.41A either in the calculation or measurement result.
2. Discuss the (AV) gain of amplifier with capacitor C2 and without capacitor C2. Is
there any different between them? If yes explain why.
The (AV) gain of amplifier with capacitor C2 and without capacitor C2 are different
because when the current passes through a capacitor between them, it will slightly reduce
current by 12% when having C2.