ECE 255, MOSFET Basic

Configurations

8 March 2018

In this lecture, we will go back to Section 7.3, and the basic configurations
of MOSFET amplifiers will be studied similar to that of BJT. Previously, it
has been shown that with the transistor DC biased at the appropriate point
(Q point or operating point), linear relations can be derived between the small
voltage signal and current signal. We will continue this analysis with MOSFETs,
starting with the common-source amplifier.

1 Common-Source (CS) Amplifier

The common-source (CS) amplifier for MOSFET is the analogue of the common-
emitter amplifier for BJT. Its popularity arises from its high gain, and that by
cascading a number of them, larger amplification of the signal can be achieved.

1.1 Chararacteristic Parameters of the CS Amplifier

Figure 1(a) shows the small-signal model for the common-source amplifier. Here,
RD is considered part of the amplifier and is the resistance that one measures
between the drain and the ground. The small-signal model can be replaced by
its hybrid-π model as shown in Figure 1(b). Then the current induced in the
output port is i = −gm vgs as indicated by the current source. Thus

vo = −gm vgs RD (1.1)

By inspection, one sees that

Rin = ∞, vi = vsig , vgs = vi (1.2)

Thus the open-circuit voltage gain is

vo
Avo = = −gm RD (1.3)
vi
Printed on March 14, 2018 at 10 : 48: W.C. Chew and S.K. Gupta.

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One can replace a linear circuit driven by a source by its Thévenin equivalence.
Then from the equivalent-circuit model in Figure 1(b), one can replace the out-
put part of the circuit with a Thévenin or Norton equivalence. In this case, it is
more convenient to use the Norton equivalence. To find the Norton equivalence
resistance, one sets vi = 0, which will make the current source an open circuit
with zero current. And by the test-current method, the output resistance is
Ro = RD (1.4)
If now, a load resistor, RL is connected to the output across RD , then the
voltage gain proper (also called terminal voltage gain), by the voltage divider
formula, is
RL RD RL
Av = Avo = −gm = −gm (RD k RL ) (1.5)
RL + Ro RL + RD
From the fact that Rin = ∞, then vi = vsig . The overall voltage gain, Gv , is the
same as the voltage gain proper, Av , namely
vo
Gv = = −gm (RD k RL ) (1.6)
vsig

Figure 1: (a) Small-signal model for a common-source amplifier. (b) The hybrid-
π model for the common-source amplifier (Courtesy of Sedra and Smith).

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1.2 Final Remarks on CS Amplifier
1. The CS amplifiers has infinite input impedance (draws no current at DC),
and a moderately high output resistance (easier to match for maximum
power transfer), and a high voltage gain (a desirable feature of an ampli-
fier).
2. Reducing RD reduces the output resistance of a CS amplifier, but unfortu-
nately, the voltage gain is also reduced. Alternate design can be employed
to reduce the output resistance (to be discussed later).
3. A CS amplifier suffers from poor high frequency performance, as most
transistor amplifiers do.

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2 Common-Source Amplifier with a Source Re-
sistance

Figure 2: A CS amplifier with a source resistance: (top) detail circuit, and

(bottom) equivalent circuit T model (Courtesy of Sedra and Smith).

As shown in Figure 2, a T model is used for the equivalent circuit for simplicity.
It is seen that the input resistance of the circuit is infinite because no gate
current flows. As a consequence, vi = vsig . However, because of the existence of
the source resistance, less of the input voltage is divided to vgs , by the voltage-
divider formula. Thus
1/gm vi
vgs = vi = (2.1)
1/gm + Rs 1 + gm Rs

It is seen that Rs can be used to make vgs small so that there is less nonlinear
distortion as the small-signal approximations will become better. The output

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voltage is generated by the controlled current source yielding

vo = −iRD (2.2)

The current i can be found by Ohm’s law

vi gm
i= = vi (2.3)
1/gm + Rs 1 + gm Rs

Thus the open-circuit voltage gain (assume that RD is part of the amplifier) is

vo gm RD RD
Avo = =− =− (2.4)
vi 1 + gm Rs 1/gm + Rs

The above shows that including the source resistance reduces the amplifier gain
by a factor of 1 + gm Rs , but linearity and bandwidth performance (to be shown
later) will improve. This is called negative feedback because when the input volt-
age vi or vgs attempts to increase, the voltage drop across Rs increases reducing
vgs . The source resistance is also called source-degeneration resistance.
Since this is a linear circuit, the Thévenin equivalence of the amplifier looking
in from the right can be easily found. The open-circuit voltage allows us to easily
find the equivalent Thévenin voltage source. The equivalent Thévenin resistor
is Ro which is just RD in this case.
When a load resistor RL is added, then the voltage gain proper (also called
terminal voltage gain) is

gm (RD k RL ) RD k RL
Av = − =− (2.5)
1 + gm Rs 1/gm + Rs

Because the input resistance is infinite, hence vi = vsig and the overall voltage
gain Gv = Av .

2.1 Summary of the CS Amplifier with Source Resistance

1. The input resistance Rin is infinite.
2. The open-circuit voltage gain, Avo , is reduced by a factor of 1 + gm Rs as
seen in (2.4).

3. For the same nonlinear distortion, the input signal can be increased by a
factor of 1 + gm Rs compared to without Rs .
4. As shall be shown later, the high-frequency response of this design is
improved.

In general, the addition of the source resistance Rs gives rise to a “negative”

feedback factor 1 + gm Rs that reduces voltage gain, but improves linearity, and
high-frequency response. Because of the negative-feedback action of Rs , it is
also called the source-degenerate resistance.

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3 Common-Gate (CG) Amplifier

Figure 3: (a) Small-signal model for a common-gate amplifier. (b) The T model
equivalent circuit for the common-gate amplifier. Note that the gate current is
always zero in the T model (Courtesy of Sedra and Smith).

The small-signal and a T-model equivalent-circuit common-gate (CG) amplifier

is shown in Figure 3. By inspection, the input resistance Rin is given by
1
Rin = (3.1)
gm
which is typically a few hundred ohms, a low input impedance. The output
voltage is
vi
vo = −iRD , where i = − = −gm vi (3.2)
1/gm
Hence the open-circuit voltage gain is
vo
Avo = = gm RD (3.3)
vi
which is similar to that of the CS amplifier save for a sign change. The output
resistance (or the Thévenin equivalent resistor) of the circuit is

Ro = RD (3.4)

The smaller input impedance is deleterious to the amplifier gain, as by the

voltage divider formula, one gets
vi Rin 1/gm
= = (3.5)
vsig Rin + Rsig 1/gm + Rsig
meaning that the vi is attenuated compared to vsig , since Rsig is typically larger
than 1/gm .

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 When a load resistor RL is connected to the output, the voltage gain proper
(terminal voltage gain) is then

Av = gm RD k RL (3.6)

Thus the overall voltage gain is

1/gm RD k RL
Gv = gm (RD k RL ) = (3.7)
Rsig + 1/gm Rsig + 1/gm

As the input impedance is low, it is good for matching sources with a low input
impedance due the the maximum power theorem, but it draws more current,
implying high power consumption from the signal source.

3.1 Summary of the CG Amplifier

1. The CG amplifier has a low input resistance 1/gm . This is undesirable as
it will draw large current when driven by a voltage input.

2. The voltage gain of the CG amplifier can be made similar in magnitude

to that of the CS amplifier if RD ||RL can be made large compared to
Rsig + 1/gm .
3. The output resistance can be made large since Ro = RD .
4. The CG amplifier has good high frequency performance as shall be shown
later.

4 The Source Follower (Common Drain Ampli-

fier)
This is similar to the emitter follower for the BJT, which is used as a voltage
buffer. It is a unit-gain amplifier with a very large input impedance but a
smaller output impedance. Therefore it is good for matching a high-impedance
circuit to a low-impedance circuit or to a circuit that needs a larger supply of
current.

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Figure 4: (a) Common-drain MOSFET amplifier or source follower for small
signals. (b) The T model equivalent circuit for the common-drain or source
follower amplifier. Note that the gate current is always zero in this model
(Courtesy of Sedra and Smith).

4.1 Characteristics of a Source Follower

Figure 4 shows the small-signal circuit and a T-model equivalent circuit diagram
for a source follower. The input source is represented by a Thévenin equivalent
voltage vsig and resistor Rsig . A load resistor is connected to the output between
the source and ground.
Since the gate current is zero for this circuit,
Rin = ∞ (4.1)
Using the voltage divider formula, it is seen that voltage gain proper or terminal

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voltage gain is
vo RL
Av = = (4.2)
vi RL + 1/gm
For the open-circuit voltage gain, RL = ∞ and

Avo = 1 (4.3)

The output resistance is obtained by replacing the proper part of the amplifier
with a Thévenin equivalence. To this end, with the use of the test-current
method, one sets the value of vi = 0, and thus

Ro = 1/gm (4.4)

Because of the infinite input impedance Rin , then vi = vsig , and the overall
voltage gain Gv (also called the total voltage gain) is the same as the voltage
gain proper Av (also called terminal voltage gain)
RL
G v = Av = (4.5)
RL + 1/gm
Since 1/gm is typically small, with large RL , the gain is less than unity, but
is close to unity. Hence, this is a source follower, because the source voltage
follows the input voltage, but yet, it can provide a larger current to the output
than the input current.

5 Summary Table and Comparisons

The following concluding points are in order for the MOSFET and BJT ampli-
fiers.

1. MOS amplifiers have high input impedance (except for CG amplifiers).

This is an advantage over BJT amplifiers.
2. BJT’s have higher transconductance gm than MOSFET’s giving BJT am-
plifiers higher gains.
3. Discrete-circuit amplifiers, e.g., circuits assembled on printed-circuit board
(PCB), BJT’s are prevalent because of their longer history and wider
commercial availability.
4. Because of easier fabrication, integrated circuit (IC) amplifiers are domi-
nated by MOSFET’s.
5. The CS and CE configurations are best suited for gain amplifiers because
of their larger than unity gain. A cascade of them can be used to increase
the gain.
6. The addition of Rs in a CS amplifier and Re in a CE amplifier improves
the linearity of the circuit and better high frequency performance.

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 7. The CE and CS designs have both high voltage and current gains. The
CB and CG designs have low current gain, but still high voltage gain. The
CC and CD designs (emitter and source followers) have low voltage gain,
but high current gain.

Table 7.4 from Sedra and Smith summarizes the characteristics of the MOS-
FET amplifiers.

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