B2045G thru B20200G

B2045G thru B20200G Pb

Pb Free Plating Product
20.0 Ampere Surface Mount Dual Common Cathode Schottky Barrier Rectifiers

D2PAK/TO-263AB Unit : inch (mm)

¬ ThinkiSemi Planar Schottky Technology
¬ Good Soft Recovery Characteristics

Features ¬
Ideally Suited for Automatic Assembly

¬ Low Forward Voltage

¬ High Surge Current Capability

¬ Low Leakage Current

¬ Freewheeling, Snubber, Clamp

¬ Inversion Welder

¬ PFC
Applications
¬ Plating Power Supply
¬ Ultrasonic Cleaner and Welder
Case Case Case Case
¬ Converter & Chopper Positive Negative Doubler Series

¬ UPS/LED SMPS/HID Common Cathode

Suffix "G"
Common Anode
Suffix "RG"
Tandem Polarity
Suffix "DG"
Tandem Polarity
Suffix "SG"

MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS (TA=25°C unless otherwise noted)

PARAMETER SYMBOL B2045G B2060G B20100G B20150G B20200G Unit

Marking code B2045G B2060G B20100G B20150G B20200G

Maximum repetitive peak reverse voltage VRRM 45 60 100 150 200 V

Maximum RMS voltage VRMS 31 42 70 105 140 V
Maximum DC blocking voltage VDC 45 60 100 150 200 V
Maximum average forward rectified current IF(AV) 20 A
Peak repetitive forward current
IFRM 20 A
(Rated VR, Square wave, 20KHz)
Peak forward surge current, 8.3 ms single half sine-wave
IFSM 150 A
superimposed on rated load
Peak repetitive reverse surge current (Note 1) IRRM 1 0.5 A
Maximum instantaneous forward voltage (Note 2)
IF=10A, TJ=25°C VF 0.70 0.80 0.85 0.99 V
IF=10A, TJ=125°C 0.60 0.70 0.75 0.87
Maximum reverse current @ rated VR TJ=25°C 0.1
IR mA
TJ=125°C 15 10 5
Voltage rate of change (Rated VR) dV/dt 10000 V/μs
Typical thermal resistance RθJC 1.5 2 °C/W
Operating junction temperature range TJ - 55 to +150 °C
Storage temperature range TSTG - 55 to +150 °C
Note 1: tp = 2.0 μs, 1.0KHz
Note 2: Pulse test with PW=300μs, 1% duty cycle

Rev.10T Page 1/2

© 1995 Thinki Semiconductor Co., Ltd. http://www.thinkisemi.com.tw/

 B2045G thru B20200G

RATINGS AND CHARACTERISTICS CURVES

(TA=25°C unless otherwise noted)
45V=B2045G
60V=B2060G
100V=B20100G
150V=B20150G
200V=B20200G

FIG.1 FORWARD CURRENT DERATING CURVE FIG. 2 MAXIMUM NON-REPETITIVE FORWARD

SURGE CURRENT PER LEG
25

PEAK FORWARD SURGE CURRENT (A)

150

8.3ms Single Half Sine Wave

20 125
AVERAGE FORWARD A

100
15
CURRENT (A)

75
10
50
5
RESISTIVE OR 25
INDUCTIVELOAD
0 0
50 60 70 80 90 100 110 120 130 140 150 1 10 100
CASE TEMPERATURE (oC) NUMBER OF CYCLES AT 60 Hz

FIG. 3 TYPICAL FORWARD CHARACTERISTICS FIG. 4 TYPICAL REVERSE CHARACTERISTICS

PER LEG PER LEG
100 100
Pulse Width=300μs
45V
1% Duty Cycle
60V-200V
INSTANTANEOUS REVERSE A

10
INSTANTANEOUS FORWARD A

10
TJ=125°C
CURRENT (mA)

1 TJ=125°C
CURRENT (A)

1 TJ=25°C

0.1
TJ=75°C
0.1
45V
60V 0.01
100V-200V TJ=25°C
0.01
0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1 1.1 1.2 0.001
0 20 40 60 80 100 120 140
FORWARD VOLTAGE (V)
PERCENT OF RATED PEAK REVERSE VOLTAGE (%)

FIG. 5 TYPICAL JUNCTION CAPACITANCE PER FIG. 6 TYPICAL TRANSIENT THERMAL IMPEDANCE
LEG PER LEG
10000
f=1.0MHz 100
Vsig=50mVp-p
JUNCTION CAPACITANCE (pF) A

TRANSIENT THERMAL
IMPEDANCE (°C/W)

10

1000

45V
60V - 200V

100 0.1
0.1 1 10 100 0.01 0.1 1 10 100
REVERSE VOLTAGE (V) T-PULSE DURATION(s)

Rev.10T Page 2/2

© 1995 Thinki Semiconductor Co., Ltd. http://www.thinkisemi.com.tw/