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Ect201 Solid State Devices L-T-P: 3-1-0 Syllabus

This document outlines the syllabus for the ECT201 SOLID STATE DEVICES course. The syllabus covers 5 modules: (1) elemental and compound semiconductors, carrier generation and recombination, (2) carrier transport and mobility, Hall Effect, (3) PN junctions, metal-semiconductor contacts, bipolar junction transistors, (4) MOS capacitors, MOSFET structure and operation, (5) MOSFET scaling and short channel effects, non-planar MOSFETs like FinFETs. The course will use 6 specified textbooks to cover the topics in the 5 modules.

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Dr. Rakesh S
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99 views

Ect201 Solid State Devices L-T-P: 3-1-0 Syllabus

This document outlines the syllabus for the ECT201 SOLID STATE DEVICES course. The syllabus covers 5 modules: (1) elemental and compound semiconductors, carrier generation and recombination, (2) carrier transport and mobility, Hall Effect, (3) PN junctions, metal-semiconductor contacts, bipolar junction transistors, (4) MOS capacitors, MOSFET structure and operation, (5) MOSFET scaling and short channel effects, non-planar MOSFETs like FinFETs. The course will use 6 specified textbooks to cover the topics in the 5 modules.

Uploaded by

Dr. Rakesh S
Copyright
© © All Rights Reserved
Available Formats
Download as PDF, TXT or read online on Scribd
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ECT201 SOLID STATE DEVICES

L-T-P : 3-1-0

SYLLABUS
MODULE I
Elemental and compound semiconductors, Intrinsic and Extrinsic semiconductors, concept of
effective mass, Fermions-Fermi Dirac distribution, Fermi level, Doping & Energy band
diagram, Equilibrium and steady state conditions, Density of states & Effective density of
states, Equilibrium concentration of electrons and holes. Excess carriers in semiconductors:
Generation and recombination mechanisms of excess carriers, quasi Fermi levels.
MODULE II
Carrier transport in semiconductors, drift, conductivity and mobility, variation of mobility
with temperature and doping, Hall Effect. Diffusion, Einstein relations, Poisson equations,
Continuity equations, Current flow equations, Diffusion length, Gradient of quasi Fermi level
MODULE III
PN junctions : Contact potential, Electrical Field, Potential and Charge distribution at the
junction, Biasing and Energy band diagrams, Ideal diode equation. Metal Semiconductor
contacts, Electron affinity and work function, Ohmic and Rectifying Contacts, current voltage
characteristics. Bipolar junction transistor, current components, Transistor action, Base width
modulation.
MODULE IV
Ideal MOS capacitor, band diagrams at equilibrium, accumulation, depletion and inversion,
threshold voltage, body effect, MOSFET-structure, types, Drain current equation (derive)-
linear and saturation region, Drain characteristics, transfer characteristics.
MODULE V
MOSFET scaling – need for scaling, constant voltage scaling and constant field scaling. Sub
threshold conduction in MOS. Short channel effects- Channel length modulation, Drain
Induced Barrier Lowering, Velocity Saturation, Threshold Voltage Variations and Hot
Carrier Effects. Non-Planar MOSFETs: Fin FET –Structure, operation and advantages
Text Books
1. Ben G. Streetman and Sanjay Kumar Banerjee, Solid State Electronic Devices, Pearson
6/e, 2010 (Modules I, II and III)
2. Sung Mo Kang, CMOS Digital Integrated Circuits: Analysis and Design, McGraw-Hill,
Third Ed., 2002 (Modules IV and V)
Reference Books
1. Neamen, Semiconductor Physics and Devices, McGraw Hill, 4/e, 2012
2. Sze S.M., Semiconductor Devices: Physics and Technology, John Wiley, 3/e, 2005
3. Pierret, Semiconductor Devices Fundamentals, Pearson, 2006
4. Sze S.M., Physics of Semiconductor Devices, John Wiley, 3/e, 2005
5. Achuthan, K N Bhat, Fundamentals of Semiconductor Devices, 1e, McGraw Hill,2015
6. Yannis Tsividis, Operation and Modelling of the MOS Transistor, Oxford University
Press.
7. Jan M.Rabaey, Anantha Chandrakasan, Borivoje Nikolic, Digital Integrated Circuits – A
Design Perspective, PHI.

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