Republic of the Philippines

PHILIPPINE STATE COLLEGE OF AERONAUTICS

Piccio Garden, Villamor, Pasay City

AE 212
BASIC ELECTRONICS MODULE

I. Module 03: Solid state Fundamentals

II. Learning Outcomes:

Course Learning Outcomes [CLO]

Module Learning Outcomes [MLO]

CLO 1. Identify the basic principle of
electronics;
Topic Learning Outcomes [TLO]
MLO 1. To understand Semiconductors
CLO 2. Explain the concepts involving the and its working principles.
fundamentals laws and theories of • TLO 4. Discuss the different passive
electronics; MLO 2. Explain the parts of and active electronic components and
semiconductors that reacts during current how they can be used in a circuit.
conduction.

III. Table of Contents

Time Allotment
Title Page
(mins)
Barrier voltage 2 10
Charged atom 2 10
Positive and negative 30
barrier voltage at the p-n 2
junction
Depletion region 4 20
P-type and n-type 20
semiconductor
4
Width of depletion region 7 30
References 10
Activities 10 60

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 IV. Core Content

Barrier voltage
The n-type and p-type semiconductor materials are electrically neutral before the free
electrons and holes had crossed the junction. However, when the free electrons and holes
have crossed the junction, the n-type and p-type semiconductors become charged.

Charged atom

If the atom has unequal number of electrons and protons, the atom is said to be charged. This
charged atom may be positive or negative. The atom which has more number of electrons
than the protons is said to be negatively charged while the atom which has more number of
protons than the electrons is said to be positively charged.

Positive and negative barrier voltage at the p-n junction

In positive ion, the total number of electrons orbiting the nucleus of an atom is less compared
to the total number of protons present in the nucleus of an atom. Hence, it is positively
charged. On the other hand, in negative ion, the total number of electrons orbiting the nucleus
of an atom is more compared to the total number of protons present in the nucleus of an atom.
Hence, it is negatively charged.

Thus, a net positive charge is built at the n-side of the p-n junction due to the positive ions at
the n-side; similarly a net negative charge is built at the p-side of the p-n junction due to the
negative ions at the p-side.

This net negative charge at the p-side of the p-n junction prevents the further flow of free
electrons crossing from n-side to p-side because the negative charge present at the p-side of
p-n junction repels the free electrons.

Similarly, the net positive charge at n-side of the p-n junction prevents the further flow of
holes crossing from p-side to n-side. Hence, positive charge present at n-side and negative
charge present at p-side of p-n junction acts as barrier between p-type and n-type
semiconductor.

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Thus, a barrier is build near the junction which prevents the further movement of electrons
and holes.

The negative charge formed at the p-side of the p-n junction is called negative barrier voltage
while the positive charge formed at the n-side of the p-n junction is called positive barrier
voltage. The total charge formed at the p-n junction is called barrier voltage, barrier potential
or junction barrier.

The size of the barrier voltage at the p-n junction is depends on, the amount of doping,
junction temperature and type of material used. The barrier voltage for silicon diode is 0.7
volts and for germanium is 0.3 volts.

Barrier voltage allows minority carriers

The barrier voltage at the p-n junction opposes only the flow of majority charge carriers.
Which means it prevents the flow of electrons from n-side and flow of holes from p-side.

However, it allows the flow of minority charge carriers. Any free electrons (minority carriers)
produced by thermal energy on p-side of the semiconductor are attracted towards the positive
barrier at the n-side of the p-n junction. Hence, free electrons (minority carriers) crosses from
p-side to n-side.

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Similarly, any holes (minority carriers) produced by thermal energy on n-side of the
semiconductor are attracted towards the negative barrier at the p-side of the p-n junction.
Hence, holes (minority carriers) cross from n-side to p-side.

Thus, the barrier voltage allows the flow of minority carriers (.I.e. free electrons at p-side and
holes at n-side) to cross the junction.

Depletion region
Generally, depletion refers to reduction or decrease in quantity of something. For example,
oil depletion refers to decrease in oil production from a particular oil well, region, or
geographic area over a given time. Similarly, in semiconductor physics, the depletion region
refers to a region where flow of charge carriers are decreased over a given time and finally
results in empty mobile charge carriers or full of immobile charge carriers.

P-type and n-type semiconductor

The p-type semiconductor is formed by adding trivalent impurities to the pure or intrinsic
semiconductor while n-type semiconductor is formed by adding pentavalent impurities to the
pure or intrinsic semiconductor.

In p-type semiconductors, holes are the majority charge carriers while free electrons are the
minority charge carriers. On the other hand, in n-type semiconductors free electrons are the
majority charge carriers while holes are the minority charge carriers.

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Flow of free electrons and holes
If p-type semiconductor is joined with n-type semiconductor, a p-n junction is formed. The
region in which the p-type and n-type semiconductors are joined is called p-n junction. This
p-n junction separates n-type semiconductor from p-type semiconductor.

In n-type semiconductors, large number of free electrons is present due to this they get
repelled from each other and try to move from a high concentration region (n-side) to a low
concentration region (p-side). Moreover, near the junction free electrons and holes are close
to each other. According to coulombs law there exist a force of attraction between opposite
charges.

Hence, the free electrons from n-side attracted towards the holes at p-side. Thus, the free
electrons move from n-side to p-side. Similarly, holes move from p-side to n-side.

Positive and negative charge at p-n junction

The free electrons that are crossing the junction from n-side provide extra electrons to the
atoms on the p-side by filling holes in the p-side atoms. The atom that gains extra electron at
p-side has more number of electrons than protons. We know that, when the atom gains an
extra electron from the outside atom it will become a negative ion.

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Thus, each free electron that is crossing the junction from n-side to fill the hole in p-side atom
creates a negative ion at p-side. Similarly, each free electron that left the parent atom at n-side
to fill the hole in p-side atom creates a positive ion at n-side.

Negative ion has more number of electrons than protons. Hence, it is negatively charged.
Thus, a net negative charge is build at the p-side of p-n junction. Similarly, positive ion has
more number of protons than electrons. Hence, it is positively charged. Thus, a net positive
charge is build at n-side of the p-n junction.

The net negative charge at p-side of the p-n junction prevents further flow of free electrons
crossing from n-side to p-side because the negative charge present at the p-side of the p-n
junction repels the free electrons. Similarly, the net positive charge at n-side of the p-n
junction prevents further flow of holes from p-side to n-side.

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Thus, immobile positive charge at n-side and immobile negative charge at p-side near the
junction acts like a barrier or wall and prevent the further flow of free electrons and holes.
The region near the junction where flow of charges carriers are decreased over a given time
and finally results in empty charge carriers or full of immobile charge carriers is called
depletion region.

The depletion region is also called as depletion zone, depletion layer, space charge region, or
space charge layer. The depletion region acts like a wall between p-type and n-type
semiconductor and prevents further flow of free electrons and holes.

Width of depletion region

The process of adding impurity atoms to the pure or intrinsic semiconductor is called doping.
When a large number of pentavalent atoms are added to the intrinsic semiconductor, a large
number of free electrons are generated. The semiconductor, which has large number of free
electrons, is called n-type semiconductor.

When a large number of trivalent impurity atoms are added to the intrinsic semiconductor, a
large number of holes are generated. The semiconductor, which has large number of holes, is
called p-type semiconductor.

When a heavily doped n-type semiconductor is joined with the heavily doped p-type
semiconductor, a p-n junction is formed. In n-type semiconductor, large number of free
electrons is present; due to this, they get repelled from each other and try to move from
higher concentration region (n-side) to a lower concentration region (p-side). Similarly, in p-
type semiconductor, holes get repelled from each other and try to move from higher

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concentration (p-side) region to a lower concentration region (n-side). The free electrons that
cross the junction provide extra electrons to the atoms at p-side by filling the holes. The atom,
which gains extra electron at the p-side, becomes a negative ion. Similarly, the free electrons,
which left the parent atoms to fill the holes at p-side, create a positive ion at n-side.

If the doping level is further increased, then even more number of free electrons and holes are
generated. This will create a large electric field at n-side and p-side. This electric field
dominates the opposing electric field from the ions (depletion region). Hence, the electric
field pushes free electrons towards p-side and holes towards n-side.

In heavily doped semiconductors, recombination rate is very fast because of large number of
charge carriers. Hence, the free electrons (majority charge carriers) fill the holes in the
positive ions at n-side before they cross the p-n junction. The positive ion (charged atom),
which gains the electron, becomes a neutral atom. Similarly, the holes (majority charge
carriers) occupy the electron place in the negative ion before they cross the p-n junction. The
negative ion, which loses the free electron, becomes a neutral atom.

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Hence, the positive ions at n-side and negative ions at p-side (which acts like a barrier) are
decreased over a given period. This decreases the width of depletion region. Thus, the width
of depletion region in the heavily doped semiconductor decreases over a given period.

Depletion width: P-type and n-type semiconductors is lightly doped

Just like the heavily doped n-type and p-type semiconductors, the free electrons and holes are
generated in the lightly doped n-type and p-type semiconductors. However, the free electrons
and holes generated in the lightly doped semiconductors are less when compared with the
heavily doped semiconductors.
The free electrons in the n-type semiconductor experience a repulsive force from each other
and try to move from a higher concentration region (n-side) to a lower concentration region
(p-side). Similarly, the holes try to move from a higher concentration region (p-side) to a
lower concentration region (n-side).

In the lightly doped semiconductors, the recombination rate is very slow. Hence, the free
electrons from n-side cross the junction and fill the holes in the atoms at p-side before they
recombine with the positive ions at n-side. The atom, which gains an extra electron at p-side,
becomes a negative ion. Similarly, the holes from p-side cross the junction and occupy the

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electrons place at n-side before they recombine with the negative ions at p-side. The atom,
which loses the valence electron at n-side, becomes a positive ion.

Hence, the positive ions at n-side and the negative ions at p-side are increased over a given
period. This increases the width of depletion region. Thus, the width of depletion region
increases in the lightly doped semiconductors over a given period.

Reference:
Semiconductor Diodes, Retrieved from: https://www.physics-and-radio-
electronics.com/electronic-devices-and-circuits/semiconductor-
diodes/widthofdepletionregion.html

V. Enrichment/ In-text activities

Answer the following questions. Turn in your answers in google

classroom in PDF or Document format.

1. How does depletion region shrink to allow electron transfer from

2 region of diode?
2. Barrier voltage opposes what carriers?
3. How can we say that an atom is charged? Explain the composition
of electrons and protons.
4. Explain what P and N-type region affects the electron flow?
5. What is the main function of a PN junction?

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 Rubrics
Criteria Inadequate Adequate Above Exemplary Score
65%-74% 75%-84% Average 93%-100%
85%-92%
Organization Writing lacks Writing is Writing is Writing shows
logical coherent and coherent and high degree of
organization. Itlogically logically attention to
shows some organized. organized logic and
coherence but Some with reasoning of
ideas lack unity.
points remain transitions points. Unity
Serious errors. misplaced and used between clearly leads
stray from the ideas and the reader to
topic. paragraphs to the
Transitions create conclusion
evident but coherence. and stirs
not Overall unity thought
used of ideas is regarding the
throughout present. topic.
essay.
Level of Shows some Content Content Content
Content thinking and indicates indicates indicates
reasoning but thinking and original synthesis of
most ideas are reasoning thinking and ideas, indepth
underdeveloped applied with develops analysis and
and unoriginal. original ideas with evidences
thought on a sufficient and original
few ideas. firm evidence. thought and
support for
the topic.
Development Main points lack Main points Main points Main points
detailed are present well well
development. with limited developed developed
Ideas are vague detail and with quality with high
with little development. supporting quality and
evidence of Some critical details and quantity
critical thinking. thinking is quantity. support.
present. Critical Reveals high
thinking is degree of
weaved into critical
points thinking.
Format Fails to follow Meets format Meets format Meets all
format and and and formal and
assignment assignment assignment assignment
requirements; requirements; requirements; requirements
incorrect generally margins, and evidences
margins, correct spacing, and attention to
spacing and margins, indentations detail; all
indentation; spacing, and are correct; margins,
neatness of indentations; essay is neat spacing and
essay is neat indentations

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 essay needs but may have and correctly are correct;
attention. some assembled. essay is neat
assembly and correctly
errors. assembled
with
professional
look.
Grade:

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