SEMICONDUCTOR KTC4075F

TECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTOR

GENERAL PURPOSE APPLICATION.

SWITCHING APPLICATION.

FEATURES
E
・Excellent hFE Linearity
B
: hFE(0.1mA)/hFE(2mA)=0.95(Typ.).
・High hFE : hFE=70~700.
・Low Noise : NF=1dB(Typ.), 10dB(Max.). 2 DIM MILLIMETERS

A
G

D
A _ 0.05
0.6 +
・Complementary to KTA2014F. 3 B _ 0.05
0.8 +

K
・Thin Fine Pitch Small Package. 1 C 0.38+0.02/-0.04
D _ 0.05
0.2 +
E _ 0.05
1.0 +
G 0.35+_ 0.05
J _ 0.05
0.1 +
K _ 0.05
0.15 +

C
MAXIMUM RATING (Ta=25℃)

J
CHARACTERISTIC SYMBOL RATING UNIT
1. EMITTER
Collector-Base Voltage VCBO 60 V
2. BASE
Collector-Emitter Voltage VCEO 50 V 3. COLLECTOR

Emitter-Base Voltage VEBO 5 V

Collector Current IC 150 mA TFSM

Base Current IB 30 mA
Collector Power Dissipation PC 50 mW
Junction Temperature Tj 150 ℃
Marking Type Name
Storage Temperature Range Tstg -55～150 ℃

L h FE Rank

ELECTRICAL CHARACTERISTICS (Ta=25℃)

CHARACTERISTIC SYMBOL TEST CONDITION MIN. TYP. MAX. UNIT
Collector Cut-off Current ICBO VCB=60V, IE=0 - - 0.1 μA
Emitter Cut-off Current IEBO VEB=5V, IC=0 - - 0.1 μA
DC Current Gain hFE (Note) VCE=6V, IC=2mA 70 - 700
Collector-Emitter Saturation Voltage VCE(sat) IC=100mA, IB=10mA - 0.1 0.25 V
Transition Frequency fT VCE=10V, IC=1mA 80 - - MHz
Collector Output Capacitance Cob VCB=10V, IE=0, f=1MHz - 2.0 3.5 pF
VCE=6V, IC=0.1mA,
Noise Figure NF - 1.0 10 dB
f=1kHz, Rg=10kΩ
Note : hFE Classification O(2):70～140, Y(4):120～240, GR(6):200～400, BL(8):350~700

2005. 4. 21 Revision No : 0 1/3

 KTC4075F

I C - V CE h FE - I C
240 1k
COMMON EMITTER COMMON EMITTER
6.0 5.0
COLLECTOR CURRENT I C (mA)

Ta=25 C
200 500
3.0

DC CURRENT GAIN h FE
2.0
300
Ta=100 C VCE =6V
160
Ta=25 C
1.0 Ta=-25 C
120 100
0.5 50
80
I B =0.2mA
30
VCE =1V
40

0
0 10
0 1 2 3 4 5 6 7 0.1 0.3 1 3 10 30 100 300

COLLECTOR-EMITTER VOLTAGE V CE (V) COLLECTOR CURRENT I C (mA)

V CE(sat) - I C V BE(sat) - I C
COLLECTOR-EMITTER SATURATION

1 10
COMMON EMITTER COMMON EMITTER
BASE-EMITTER SATURATION

I C /I B =10 I C /I B =10
0.5 5
Ta=25 C
VOLTAGE VCE(sat) (V)

VOLTAGE VBE(sat) (V)

0.3 3

C
0.1 00 1
=1
Ta
0.05 0.5
Ta=25 C
0.03 0.3
Ta=-25 C

0.01 0.1
0.1 0.3 1 3 10 30 100 300 0.1 0.3 1 3 10 30 100 300

COLLECTOR CURRENT I C (mA) COLLECTOR CURRENT I C (mA)

fT - IC I B - V BE
3k 3k
TRANSITION FREQUENCY f T (MHz)

COMMON EMITTER COMMON

V CE =10V EMITTER
1k
Ta=25 C
BASE CURRENT I B (µA)

1k VCE =6V
300
500
300 100
00 C

30
25 C
5 C

100
Ta=1

Ta=2

10
Ta=-

50
3
30
1

10 0.3
0.1 0.3 1 3 10 30 100 300 0 0.2 0.4 0.6 0.8 1.0 1.2

COLLECTOR CURRENT I C (mA) BASE-EMITTER VOLTAGE V BE (V)

2005. 4. 21 Revision No : 0 2/3

 KTC4075F

h PARAMETER - I C h PARAMETER - V CE
2k 2k
COMMON EMITTER COMMON EMITTER
1k VCE =12V, f=270Hz 1k I C =2mA, Ta=25 C
GR Ta=25 C GR
500 BL BL
300 300
Y h fe
h fe Y
O O
100 100

h PARAMETER
h ie xkΩ BL
50 GR
30 BL Y 30
h PARAMETER

GR O
Y h oe xµ
Ω BL h oe xµ
Ω
10 10 Y GR
O BL O
5 BL
3 3 GR Y h ie xkΩ GR
GR O
Y
1 BL 1
Y O
0.5 h re x10 -4
O 0.3
0.3 h re x10 -4

0.1 0.1
0.1 0.5 1 3 5 10 30 50 0.5 1 3 10 30 100 300

COLLECTOR CURRENT I C (mA) COLLECTOR-EMITTER VOLTAGE VCE (V)

Pc - Ta
COLLECTOR POWER DISSIPATION PC (mW)

100

75

50

25

0
0 25 50 75 100 125 150

AMBIENT TEMPERATURE Ta ( C)

2005. 4. 21 Revision No : 0 3/3