Dr.

Hermann Schlemm
Ion Beam- and Surface Technology JENION
Saalbahnhofstraße 6
D-07743 JENA, Germany
Tel.: ++ 49 3641 22 73 29
Fax: ++ 49 3641 22 87 60
email: [email protected]
http://www.jenion.de

Material Technology by New Plasma- and Ion Beam Techniques

JENION - Dr. Hermann Schlemm

Ion Beam- and Surface-Technique

1. Company profile

JENION - Dr. Hermann Schlemm - Ion Beam- and Surface-Technique was founded in 1994. It is a
small company for special problems of Ion Beam- and Thin Film Technology. These are:
• Specialized Broad Ion Beam Systems for Research & Development and industrial applica-
tions like mass separated Ion Sources, Broad Beam Ion Implanters and reactive gas ion
sources
• Cold Cathode Plasma and Ion Sources working by the ACC-principle,
• Plasma and Ion Beam Measuring Technique,
• Research & Development in the field of Ion Beam- and Plasma-Technology,
• Research & Development in the field of Thin Film Technology.

2. Products overview

Fig.1 and tab.1 give an overview about the ion beam parameters of our systems. Some more cus-
tomer specified solutions are possible.

5
10

4
10 broad beam
ion implantation
(ACC 30 x nnn IMP)
ion energy [eV]

3
10
broad beam ion sources
(e.g. ACC 40 IS)
mass filtered ion source
2 (K-40 MIS)
10
ACC plasma source
(ACC 80 PS)

1
10
0.001 0.01 0.1 1 10
-2
current density [mAcm ]

Fig.1: Overview ion beam parameters of our systems

 Overview:
Ion Beam Processes for Thin Film Technologies

IBAD: DIBS:
Ion Beam Assisted Deposition Direct Ion Beam Sputtering

Substrate Substrate
Thin Film Thin film
Ion Beam
Target
(50 – 2000 eV)
Evaporated
Neutrals Ion Beam
(600-1000 eV)
Ion Source
Ion Source
Electron Beam
Evaporator
Noble Gases Ar, Xe
O2, N2, H2 Sputtered
CH4,… Neutrals

Ion Implantation DIBD:

Direct Ion Beam Deposition

Substrate Substrate
Thin Film
Ion Beam
(5 – 100 keV)
Implanted Region Ion Beam with
(at 5-500 nm depth) depositing Ions
(50-1000eV)

Ion Source Ion Source

Noble Gases Low temperature

O2, N2, H2 melting metals
molecular precursors (Zn, Pb, Se, P)

RIBE: CAIBE:
Reactive Ion Beam Etching Chemical Assisted Ion Beam Etching

Substrate Substrate

Etched Film Etched Film

Ion Beam with etch- Etching Precursor

ing Ions (50-1000eV) (from gas shower)

Ion Source Ion Source

Etching Precursors Noble Gas

(CF4, SF6,…)

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 Ion source type ion energy Ion beam dimensions ion source type
K 40 MIS 20 - 1000 eV 40 mm diameter mass separated filament ion
source
ACC 40 IS 20 - 1000 eV 40 mm diameter alternating cold cathode ion
source
ACC 30 x 150 IS, 20 – 1000 eV 30 x 150 mm. Linear alternating cold cath-
ACC 40 x 300 IS, 40 x 300 mm, ode ion sources
ACC 40 x 600 IS 40 x 600 mm
ACC 30 x nnn IMP 1 – 60 keV nnn mm ion beam Broad ion beam implanters
with linear ACC ion sources
ACC 80 PS 10 – 150 eV 80 mm plasma stream di- alternating cold cathode
ameter plasma source
Tab.1: Overview JENION ion beam systems

3. History
• 1994:
JENION was founded, first tests of mass separating ion filters and hot cathode ion sources.

• 1995-1996:
Building up of our ion-beam-laboratory at Schorba near Jena, publication of the principle of the
broad beam ion mass filter [1], development of the mass separating system, first broad ion beam
implantation experiments [2].

• 1997-1998:
Start of the production of the mass separating broad ion beam systems, several publications on
applications of these systems in ion implantation and surface modification [3,4].

• 1999-2001:
Development of the Alternating Cold Cathode principle leading to reactive gas stable plasma
sources [5], production of first ACC- ion- and plasma sources (ACC-40 IS).

• 2000 – 2001:
Development of the alternating cold cathode plasma source ACC-80 PS as a low energy ion
source.

• 2001 – 2003:
Development of multiple plasma probe analyzer for measuring plasma parameters and plasma an
ion beam profiles (“Plasma Mon”),
Development of the ACC ion source for low temperature melting metals for low energy metal ion
implantation,
First production and development of inline stepper motor driven substrate holders for plasma- and
ion beam processing.

• 2003:
Production of the first broad beam ion implanter with a linear ACC ion source, (together with DMS-
Dresden GmbH),
Development of linear ACC ion- and plasma sources with ion beam length from 150 to 600 mm,
development of halogen lamp heaters for plasma- and ion beam processes.

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3. Recent projects and developments
• Ion beam impurity analysis of mass filtered broad ion beams (project with Institut for Surface
Modification, Leipzig, www.iom.uni-leipzig.de [9],1998).
• Reactive ion beam etching (RIBE) of quartz glass with ACC-ion sources, max. etch rate 1µm/min,
(contribution to projects at Institut for Surface Modification, Leipzig, 1999).
• Development of microstructured and other electrode systems for plasma generation at high pres-
sure up to atmospheric pressure (contribution to a bmbf-project of Roth&Rau AG, Hohenstein-
Ernstthal, www.roth-rau.de [6,7],1999 – 2001),
• Refinement of microwave plasma sources for use in industrial photovoltaik thin film deposition
(contribution to developments of Roth&Rau AG, Hohenstein-Ernstthal www.roth-rau.de [8], 2000 –
2002).
• Solar cell technology of mc-silicon wafers (contribution to projects of Roth&Rau AG, Hohenstein-
Ernstthal [10]), 2001 – 2003).
• Development of a method for two dimensional ion beam profile control for broad ion beams (proj-
ect together with Institut for Surface Modification, Leipzig, www.iom.uni-leipzig.de 2001-2003).

4. Future projects
• Complete solutions for plasma- and ion beam processing with linear sources.
• High pressure plasma sources.
• Retarding field analyzers for electron- and ion energy distribution analysis at plasmas.
• Broad ion beam implanters and technology.

6. References
[1] H. Schlemm, "A radio frequency bandpass mass filter for broad ion beams", J. Vac. Sci. Techn. A.
Jan./Febr. 1996, 223.
[2] H. Schlemm, "Compact broad beam ion implantation of 25 keV N+ in silicon", in: Proceedings of the 11.
Int. Conf. on Ion Implantation Technology, Austin Texas, 1996, Ed. E. Ishida, et. al. IEEE Catalog No.
96TH8182, (1996) 400.
[3] H. Schlemm, F. Buchmann, "Mass separated Broad Beam Ion Implantation of 25 keV N+ in Titanium",
Surf. and Coatings Technology, 97 (1997) 259-262.
[4] H.Schlemm, D.Roth, "Broad beam Ion Implantation of Boron in Silicon with a compact Broad Beam Ion
Implanter", Surface and Coatings Technology 114 (1999) 81 –84.
[5] H. Schlemm, H. Neumann, Deutsches Patent, DE 199 28 053 A1 (1999).
[ 6] H. Schlemm, D. Roth, “Atmospheric pressure plasma processing with microstructure electrodes and
microplanar reactors”, Surf. and Coatings Technology 142-144, (2001) 272-276.
[7] D. Roth, H. Schlemm, K.-H. Gericke, H. Schmidt-Böcking, Deutsches Patent DE 100 32 955 A1 (2000).
[8] “Large scale industrial silicon nitride deposition at photovoltaik cells with linear microwave plasma sour-
ces”, H. Schlemm, A.Mai, S. Roth, D. Roth, K.-M. Baumgärtner, H.Muegge, contr. to PSE 2002 Gar-
misch Partenkirchen, to be published at Surf. Coatings Technology.
[9] ”Ion beam impurity analysis of radio-frequency mass filtered broad ion beams”, Rev. Of Sci. Instru-
ments, vol. 69, No.2 (1999) 1191.
[10] W. J. Soppe, J.Hong, W.M.M. Kessels, M.C.M. van de Sanden, W.M. Arnoldbik, H. Schlemm, C.
Devilée, H. Rieffe, S.E.A. Schiermeier, J.H. Bultman and A.W. Weeber ,“ON COMBINING SURFACE
AND BULK PASSIVATION OF SiNx:H LAYERS FOR mc-Si SOLAR CELLS”, to be published by IEEE
2002.

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