Scribd
Upload
123 views2 pages

EC 5101 (Microelectronics) Assignment: 17 3 0 F I 15 - 3 F I

The document outlines an assignment for a microelectronics course. It includes 20 questions covering topics like crystal lattices, semiconductor doping, PN junctions, carrier transport, and BJT transistors. Students are asked to calculate properties like intrinsic carrier concentration, contact potentials, currents, and capacitances for various semiconductor materials and devices. They are also asked to derive relationships, explain concepts, and plot transistor characteristics.

Uploaded by

Cmama Chhakchhuak
Copyright
© © All Rights Reserved
We take content rights seriously. If you suspect this is your content, claim it here.
Available Formats
Download as PDF, TXT or read online on Scribd
123 views2 pages

EC 5101 (Microelectronics) Assignment: 17 3 0 F I 15 - 3 F I

The document outlines an assignment for a microelectronics course. It includes 20 questions covering topics like crystal lattices, semiconductor doping, PN junctions, carrier transport, and BJT transistors. Students are asked to calculate properties like intrinsic carrier concentration, contact potentials, currents, and capacitances for various semiconductor materials and devices. They are also asked to derive relationships, explain concepts, and plot transistor characteristics.

Uploaded by

Cmama Chhakchhuak
Copyright
© © All Rights Reserved
We take content rights seriously. If you suspect this is your content, claim it here.
Available Formats
Download as PDF, TXT or read online on Scribd
You are on page 1/ 2

EC 5101 (Microelectronics)

Assignment
1. Write short notes on: (a) Crystal and lattices (b) Miller indices (c) The diamond lattice

2. What is the difference between a primitive cell and a unit cell?

3. Calculate the density-of-states effective mass of electrons in Si.

4. A Si sample is doped with 1017 As atoms/cm3. What is the equilibrium hole


concentration p0 at 300 K? Where is EF relative to Ei?

5. An unknown semiconductor has Eg = 1.1 eV and Nc = Nv. It is doped with 1015 cm-3
donors, where the donor level is 0.2 eV below Ec. Given that is EF is 0.25 eV below
Ec, calculate ni and the concentration of electrons and holes in the semiconductor at
300 K.

6. Derive an expression relating the intrinsic level Ei to the center of the band gap Eg/2.
Calculate the displacement of Ei from Eg/2 for Si at 300 K, assuming the effective
mass values for electrons and holes are l.lm0 and 0.56m0 respectively.

7. The intrinsic carrier concentration of germanium (Ge) is expressed as ni = 1.66 × 1015


T3/2 exp(−Eg/2kT) cm-3, where Eg = 0.66 eV.

(a) Calculate ni at 300 K and 600 K

(b) Determine the electron and hole concentrations if Ge is doped with P at a density
of 5 × 1016 cm-3.

8. Explain drift and diffusion currents for a semiconductor.

9. State and explain mass action law.

10. What is Einstein relationship in a PN junction?

11. A Si sample with 1016/cm3 donors is optically excited such that 1019/cm3 electron-hole
pairs are generated per second uniformly in the sample. The laser causes the sample to
heat up to 450 K. Find the quasi-Fermi levels and the change in conductivity of the
sample upon shining the light. Electron and hole lifetimes are both 10µs. Dp = 12
cm2/s; Dn„ = 36 cm2/s; ni= 1014 cm-3 at 450 K. What is the change in conductivity
upon shining light?

12. An abrupt Si p-n junction has Na = 1017 cm-3 on the p side and Nd = 1016 cm-3 on the n
side. At 300 K, (a) calculate the Fermi levels, draw an equilibrium band diagram, and
find V0 from the diagram; (b) compare the result from (a) with V0 calculated from V0
equation.
13. A Si p+-n junction has a donor doping of 5 X 1016 cm-3 on the n side and a cross-
sectional area of 10-3 cm2. If τP= 1µs and Dp = 10 cm2/s, calculate the current with a
forward bias of 0.5 V at 300 K.

14. A Si n+-p junction has an area of 5 x 5 µm. Calculate the total junction capacitance
associated with this junction at an applied reverse bias of 2 V. Assume that the n+
region is doped 1020 cm-3 and the p doping is 1 X 1016 cm-3. If we forward bias this
junction 0.5 V, what is the electric field far from the junction on the p side assuming a
hole mobility of 250 cm2/V-s, an electron mobility of 100 cm2/V-s, and a reverse
saturation current density of 1 nA/cm2 for this ideal diode?

15. In a p+-n junction reverse biased at 10 V, the capacitance is 10 pF. If the doping of
the n side is doubled and the reverse bias changed to 80 V, what is the capacitance?

16. A Si p-n junction with cross-sectional area A = 0.001 cm2 is formed with Na = 1015
cm-3, Nd = 1017 cm-3. Calculate: (a) Contact potential, V0. (b) Space-charge width at
equilibrium (zero bias). (c) Current with a forward bias of 0.5 V. Assume that the
current is diffusion dominated. Assume µn = 1500 cm2/V-s, µp= 450 cm2/V-s, τn = τp =
2.5 ms. Which carries most of the current, electrons or holes, and why? If you wanted
to double the electron current, what should you do?

17. (a) A Si bar 0.1 µm long and 100 µm2 in cross-sectional area is doped with 1017 cm- 3
phosphorus. Find the current at 300 K with 10 V applied. Repeat for a Si bar 1µm
long.

(b) How long does it take an average electron to drift 1µm in pure Si at an electric
field of 100 V/cm? Repeat for 105 V/cm.

18. Hall measurements are made on a p-type semiconductor bar 500 µm wide and 20 µm
thick. The Hall contacts A and B are displaced 2 µm with respect to each other in the
direction of current flow of 3 mA. The voltage between A and B with a magnetic field
of 10 kG (l kG = 10-5 Wb/cm2) pointing out of the plane of the sample is 3.2 mV.
When the magnetic field direction is reversed the voltage changes to - 2.8 mV. What
is the hole concentration and mobility?

19. For a pnp BJT with NE>NB>NC, show the dominant current components, with proper
arrows, for the directions in the normal active mode. If IEp=10 mA, IEn=100 µA,
ICp=9.8 mA and ICn=1 µA, Calculate the base transport factor, emitter injection
efficiency, common-base current gain, common-emitter current gain and ICBO. If the
minority stored base charge is 4.9x10-11 C, calculate the base transit time and lifetime.

20. The current amplification factor β of a BJT is very sensitive to the base width as well
as to the ratio of the base doping to the emitter doping. Calculate and plot β for a pnp
BJT with Lpn = Lnp, for:
(a) nn=pn, Wb/ Lpn =0.01 to 1;
(b) Wb = Lpn, nn/pn=0.01 to 1. Neglect mobility variations (µnp = µpn)

You might also like