PD - 9.

1489A

IRFIZ34N
HEXFET® Power MOSFET
l Advanced Process Technology
l Isolated Package D
VDSS = 55V
l High Voltage Isolation = 2.5KVRMS …
l Sink to Lead Creepage Dist. = 4.8mm
RDS(on) = 0.04Ω
l Fully Avalanche Rated G
ID = 21A
S
Description
Fifth Generation HEXFETs from International Rectifier
utilize advanced processing techniques to achieve
extremely low on-resistance per silicon area. This benefit,
combined with the fast switching speed and ruggedized
device design that HEXFET Power MOSFETs are well
known for, provides the designer with an extremely efficient
and reliable device for use in a wide variety of applications.

The TO-220 Fullpak eliminates the need for additional

insulating hardware in commercial-industrial applications.
The moulding compound used provides a high isolation
TO-220 FULLPAK
capability and a low thermal resistance between the tab
and external heatsink. This isolation is equivalent to using
a 100 micron mica barrier with standard TO-220 product.
The Fullpak is mounted to a heatsink using a single clip or
by a single screw fixing.
Absolute Maximum Ratings
Parameter Max. Units
ID @ TC = 25°C Continuous Drain Current, VGS @ 10V 21
ID @ TC = 100°C Continuous Drain Current, VGS @ 10V 15 A
IDM Pulsed Drain Current † 100
PD @TC = 25°C Power Dissipation 37 W
Linear Derating Factor 0.24 W/°C
VGS Gate-to-Source Voltage ± 20 V
EAS Single Pulse Avalanche Energy‚† 110 mJ
IAR Avalanche Current† 16 A
EAR Repetitive Avalanche Energy 3.7 mJ
dv/dt Peak Diode Recovery dv/dt Ġ 5.0 V/ns
TJ Operating Junction and -55 to + 175
TSTG Storage Temperature Range °C
Soldering Temperature, for 10 seconds 300 (1.6mm from case )
Mounting torque, 6-32 or M3 screw 10 lbf•in (1.1N•m)

Thermal Resistance
Parameter Typ. Max. Units
RθJC Junction-to-Case ––– 4.1
°C/W
RθJA Junction-to-Ambient ––– 65

8/25/97
IRFIZ34N
Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
Parameter Min. Typ. Max. Units Conditions
V(BR)DSS Drain-to-Source Breakdown Voltage 55 ––– ––– V VGS = 0V, ID = 250µA
∆V(BR)DSS/∆TJ Breakdown Voltage Temp. Coefficient ––– 0.052 ––– V/°C Reference to 25°C, I D = 1mA†
RDS(on) Static Drain-to-Source On-Resistance ––– ––– 0.04 Ω VGS = 10V, ID = 11A „
VGS(th) Gate Threshold Voltage 2.0 ––– 4.0 V VDS = VGS, I D = 250µA
gfs Forward Transconductance 6.5 ––– ––– S VDS = 25V, ID = 16A†
––– ––– 25 VDS = 55V, VGS = 0V
IDSS Drain-to-Source Leakage Current µA
––– ––– 250 VDS = 44V, VGS = 0V, TJ = 150°C
Gate-to-Source Forward Leakage ––– ––– 100 V GS = 20V
I GSS nA
Gate-to-Source Reverse Leakage ––– ––– -100 VGS = -20V
Qg Total Gate Charge ––– ––– 34 ID = 16A
Q gs Gate-to-Source Charge ––– ––– 6.8 nC VDS = 44V
Q gd Gate-to-Drain ("Miller") Charge ––– ––– 14 VGS = 10V, See Fig. 6 and 13 „†
t d(on) Turn-On Delay Time ––– 7.0 ––– VDD = 28V
tr Rise Time ––– 49 ––– I D = 16A
ns
t d(off) Turn-Off Delay Time ––– 31 ––– RG = 18Ω
tf Fall Time ––– 40 ––– RD = 1.8Ω, See Fig. 10 „†
Between lead, D
LD Internal Drain Inductance ––– 4.5 –––
6mm (0.25in.)
nH G
from package
LS Internal Source Inductance ––– 7.5 –––
and center of die contact S

Ciss Input Capacitance ––– 700 ––– VGS = 0V

Coss Output Capacitance ––– 240 ––– V DS = 25V
pF
Crss Reverse Transfer Capacitance ––– 100 ––– ƒ = 1.0MHz, See Fig. 5†
C Drain to Sink Capacitance ––– 12 ––– ƒ = 1.0MHz

Source-Drain Ratings and Characteristics

Parameter Min. Typ. Max. Units Conditions
IS Continuous Source Current MOSFET symbol D

––– ––– 21
(Body Diode) showing the
A
ISM Pulsed Source Current integral reverse G
––– ––– 100
(Body Diode) † p-n junction diode. S

VSD Diode Forward Voltage ––– ––– 1.6 V TJ = 25°C, IS = 11A, VGS = 0V „
t rr Reverse Recovery Time ––– 57 86 ns TJ = 25°C, IF = 16A
Q rr Reverse RecoveryCharge ––– 130 200 µC di/dt = 100A/µs „†
t on Forward Turn-On Time Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)

Notes:
 Repetitive rating; pulse width limited by „ Pulse width ≤ 300µs; duty cycle ≤ 2%.
max. junction temperature. ( See fig. 11 )
‚ VDD = 25V, starting TJ = 25°C, L = 610µH … t=60s, ƒ=60Hz
RG = 25Ω, IAS = 16A. (See Figure 12)

ƒ ISD ≤ 16A, di/dt ≤ 420A/µs, VDD ≤ V(BR)DSS, † Uses IRFZ34N data and test conditions
TJ ≤ 175°C
 IRFIZ34N
1000 1000
VGS VGS
TOP 15V TOP 15V
10V 10V
8.0V 8.0V
7.0V 7.0V

I , D ra in -to -S o u rce C u rre n t (A )

I , D ra in -to -S o u rce C u rre n t (A )

6.0V 6.0V
5.5V 5.5V
5.0V 5.0V
BOTT OM 4.5V BOTT OM 4.5V

100 100

10 10
4 .5V
4 .5V

D
D

2 0µ s PU LSE W ID TH 20 µs PU L SE W ID TH
TTCJ = 2 5°C 1
TTCJ = 175 °C
1 A A
0.1 1 10 100 0.1 1 10 100
V D S , D rain-to-S ource V oltage (V ) V D S , Drain-to-Source V oltage (V)

Fig 1. Typical Output Characteristics Fig 2. Typical Output Characteristics

100 2.4
I D = 26 A
R D S (o n) , D ra in -to -S o u rc e O n R e s ista n ce
I D , D r ain- to-S ourc e C u rre nt (A )

2.0
TJ = 2 5 °C

TJ = 1 7 5 °C 1.6
(N o rm a lize d )

10 1.2

0.8

0.4

VD S = 2 5 V
2 0 µ s PU L SE W ID TH VG S = 1 0V
1 0.0
A A
4 5 6 7 8 9 10 -60 -40 -20 0 20 40 60 80 100 120 140 160 180

V G S , Ga te-to-S o urce V oltage (V ) T J , Junction T emperature (°C)

Fig 3. Typical Transfer Characteristics Fig 4. Normalized On-Resistance

Vs. Temperature
IRFIZ34N
1200 20
V GS = 0V, f = 1 MH z I D = 1 6A
C iss = C gs + C gd , C ds SH O R TED V DS = 4 4V

V G S , G a te -to -S o u rc e V o lta g e (V )
C rss = C gd V DS = 2 8V
1000
C is s C oss = C ds + C gd 16
C , C a p a c ita n c e (p F )

800
C o ss 12

600

8
400
C rs s
4
200

FO R TES T C IR CU IT
SEE FIG U R E 13
0 A 0 A
1 10 100 0 10 20 30 40
V D S , Drain-to-Source V oltage (V) Q G , Total Gate Charge (nC )

Fig 5. Typical Capacitance Vs. Fig 6. Typical Gate Charge Vs.

Drain-to-Source Voltage Gate-to-Source Voltage

1000 1000
OPE R ATIO N IN TH IS A RE A LIMITE D
BY R D S(o n)
IS D , R e ve rs e D ra in C u rre n t (A )

I D , D ra in C u rre n t (A )

100 100
10µ s
TJ = 175 °C

TJ = 25 °C 100µ s
10 10

1m s

T C = 25 °C
T J = 17 5°C 10m s
VG S = 0 V S ing le Pulse
1 A 1 A
0.4 0.8 1.2 1.6 2.0 1 10 100
V S D , S ource-to-Drain Voltage (V ) V D S , Drain-to-Source Voltage (V)

Fig 7. Typical Source-Drain Diode Fig 8. Maximum Safe Operating Area

Forward Voltage
 IRFIZ34N
RD
VDS
25
VGS
D.U.T.
RG
+
20 -VDD
I D , Drain Current (A)

10V
Pulse Width ≤ 1 µs
15 Duty Factor ≤ 0.1 %

10
Fig 10a. Switching Time Test Circuit

VDS
90%
5

0
25 50 75 100 125 150 175
10%
TC , Case Temperature ( ° C) VGS
td(on) tr t d(off) tf

Fig 9. Maximum Drain Current Vs. Fig 10b. Switching Time Waveforms
Case Temperature

10
(Z thJC )

D = 0.50

1 0.20
Thermal Response

0.10

0.05

0.02 PDM
0.01 SINGLE PULSE
0.1
(THERMAL RESPONSE) t1
t2

Notes:
1. Duty factor D = t1 / t 2
2. Peak T J = P DM x Z thJC + TC
0.01
0.00001 0.0001 0.001 0.01 0.1 1
t1 , Rectangular Pulse Duration (sec)

Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case

IRFIZ34N
L 250
ID

E A S , S in g le P u ls e A va la n c h e E n e rg y (m J)
VDS
TOP 6 .5A
11A
D.U.T. BO TTOM 16 A
200

RG +
V
- DD
150

IAS
tp
0.01Ω 100

Fig 12a. Unclamped Inductive Test Circuit

50

V(BR)DSS
V D D = 2 5V
0 A
tp
25 50 75 100 125 150 175
VDD Starting TJ , Junction T emperature (°C)

VDS
Fig 12c. Maximum Avalanche Energy
Vs. Drain Current

IAS

Fig 12b. Unclamped Inductive Waveforms

Current Regulator
Same Type as D.U.T.

50KΩ

12V .2µF
QG .3µF

10 V +
V
D.U.T. - DS
QGS QGD
VGS
VG 3mA

IG ID
Charge Current Sampling Resistors

Fig 13a. Basic Gate Charge Waveform Fig 13b. Gate Charge Test Circuit
 IRFIZ34N
Peak Diode Recovery dv/dt Test Circuit

+ Circuit Layout Considerations

D.U.T
• Low Stray Inductance
• Ground Plane
ƒ
• Low Leakage Inductance
Current Transformer
-

+
‚
„
- +
-


RG • dv/dt controlled by RG +
• Driver same type as D.U.T. VDD
-
• ISD controlled by Duty Factor "D"
• D.U.T. - Device Under Test

Driver Gate Drive

P.W.
Period D=
P.W. Period

VGS=10V *

D.U.T. ISD Waveform

Reverse
Recovery Body Diode Forward
Current Current
di/dt
D.U.T. VDS Waveform
Diode Recovery
dv/dt
VDD

Re-Applied
Voltage Body Diode Forward Drop
Inductor Curent

Ripple ≤ 5% ISD

* VGS = 5V for Logic Level Devices

Fig 14. For N-Channel HEXFETS

IRFIZ34N
Package Outline
TO-220 Fullpak Outline
Dimensions are shown in millimeters (inches)
10.60 (.41 7) 3.40 (.133 )
ø 4.8 0 (.189)
10.40 (.40 9) 3.10 (.123 ) 4.6 0 (.181)
2 .80 (.110)
-A - 2 .60 (.102)
3.70 (.145) LE AD A S SIGN M E N T S
3.20 (.126) 7 .10 (.280) 1 - GA TE
6 .70 (.263) 2 - D R AIN
3 - SO U R C E
16 .0 0 (.630)
15 .8 0 (.622)
1.15 (.04 5) N O T ES :
M IN .
1 D IM EN SION IN G & T O LER A N C IN G
PE R AN S I Y14.5 M , 1982
1 2 3
2 C O N TR OLLIN G D IM EN S ION : IN C H .
3.30 (.130 )
3.10 (.122 )
-B-
13 .7 0 (.540)
13 .5 0 (.530)
C
D

A
0.48 (.019) B
0.9 0 (.035) 3X
1.40 (.05 5) 3X 0.7 0 (.028) 0.44 (.017)
3X
1.05 (.04 2) 2.85 (.112 )
0.25 (.010 ) M A M B 2.65 (.104 ) M IN IM U M C R E EP AG E
2 .54 (.100) D IST A NC E B ET W E EN
2X A-B -C -D = 4.80 (.189 )

Part Marking Information

TO-220 Fullpak
E XAM PLE : T HIS IS A N IRF I840G
W ITH AS SE MBLY A
LOT CODE E401
INT ER NAT IONA L PA RT NU MBE R
RE CTIF IER IRF I840G
LOGO
E 401 9 24 5
AS SE MBLY D ATE CODE
LOT COD E (YYW W )
YY = YE AR
W W = W E EK

WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, Tel: (310) 322 3331
EUROPEAN HEADQUARTERS: Hurst Green, Oxted, Surrey RH8 9BB, UK Tel: ++ 44 1883 732020
IR CANADA: 7321 Victoria Park Ave., Suite 201, Markham, Ontario L3R 2Z8, Tel: (905) 475 1897
IR GERMANY: Saalburgstrasse 157, 61350 Bad Homburg Tel: ++ 49 6172 96590
IR ITALY: Via Liguria 49, 10071 Borgaro, Torino Tel: ++ 39 11 451 0111
IR FAR EAST: K&H Bldg., 2F, 30-4 Nishi-Ikebukuro 3-Chome, Toshima-Ku, Tokyo Japan 171 Tel: 81 3 3983 0086
IR SOUTHEAST ASIA: 315 Outram Road, #10-02 Tan Boon Liat Building, Singapore 0316 Tel: 65 221 8371
http://www.irf.com/ Data and specifications subject to change without notice. 8/97