MITSUBISHI IGBT MODULES

CM15TF-12H
MEDIUM POWER SWITCHING USE
INSULATED TYPE

B
L K K M
T - DIA.
GuP SuP GvP SvP GwP SwP
(2 TYP.)
P

D H U V W
J E

GuN SuN GvN SvN GwN SwN

Q Q P
S S S
C

TAB #250, t = 0.8

Description:
TAB #110, t = 0.5 Mitsubishi IGBT Modules are de-
signed for use in switching applica-
tions. Each module consists of six
F
IGBTs in a three phase bridge con-
G
N figuration, with each transistor hav-
ing a reverse-connected super-fast
recovery free-wheel diode. All com-
R
ponents and interconnects are iso-
lated from the heat sinking base-
P plate, offering simplified system as-
sembly and thermal management.
Features:
GuP GvP GwP u Low Drive Power
u Low VCE(sat)
(EuP) (EvP) (EwP)
u Discrete Super-Fast Recovery
U V W Free-Wheel Diode
u High Frequency Operation
u Isolated Baseplate for Easy
GuN GvN GwN
Heat Sinking
(EuN) (EvN) (EwN)
N
Applications:
u AC Motor Control
u Motion/Servo Control
Outline Drawing and Circuit Diagram
u UPS
Dimensions Inches Millimeters Dimensions Inches Millimeters u Welding Power Supplies
A 3.54 90.0 K 0.67 17.0 Ordering Information:
B 2.99±0.01 76.0±0.2 L 0.63 16.0 Example: Select the complete part
C 2.52 64.0 M 0.59 15.0 module number you desire from
the table below -i.e. CM15TF-12H
D 1.54 39.0 N 0.56 14.1
is a 600V (VCES), 15 Ampere
E 0.98 25.0 P 0.51 13.0 Six-IGBT Module.
F 0.90 23.0 Q 0.43 11.0 Type Current Rating VCES
G 0.87 22.0 R 0.26 6.5 Amperes Volts (x 50)
H 0.75 19.0 S 0.24 6.0 CM 15 12
J 0.71 18.0 T 0.22 Dia. Dia. 5.5

Sep.1998
 MITSUBISHI IGBT MODULES

CM15TF-12H
MEDIUM POWER SWITCHING USE
INSULATED TYPE

Absolute Maximum Ratings, Tj = 25 °C unless otherwise specified

Ratings Symbol CM15TF-12H Units
Junction Temperature Tj –40 to +150 °C
Storage Temperature Tstg –40 to +125 °C
Collector-Emitter Voltage (G-E SHORT) VCES 600 Volts
Gate-Emitter Voltage (C-E SHORT) VGES ±20 Volts
Collector Current (TC = 25°C) IC 15 Amperes
Peak Collector Current ICM 30* Amperes
Emitter Current** (TC = 25°C) IE 15 Amperes
Peak Emitter Current** IEM 30* Amperes
Maximum Collector Dissipation (TC = 25°C, Tj ≤ 150°C) Pc 100 Watts
Mounting Torque, M5 Mounting – 1.47 ~ 1.96 N·m
Weight – 150 Grams
Isolation Voltage (Main Terminal to Baseplate, AC 1 min.) Viso 2500 Vrms
*Pulse width and repetition rate should be such that the device junction temperature (Tj) does not exceed Tj(max) rating.
**Represents characteristics of the anti-parallel, emitter-to-collector free-wheel diode (FWDi).

Static Electrical Characteristics, Tj = 25 °C unless otherwise specified

Characteristics Symbol Test Conditions Min. Typ. Max. Units
Collector-Cutoff Current ICES VCE = VCES, VGE = 0V – – 1.0 mA
Gate Leakage Current IGES VGE = VGES, VCE = 0V – – 0.5 µA
Gate-Emitter Threshold Voltage VGE(th) IC = 1.5mA, VCE = 10V 4.5 6.0 7.5 Volts
Collector-Emitter Saturation Voltage VCE(sat) IC = 15A, VGE = 15V – 2.1 2.8** Volts
IC = 15A, VGE = 15V, Tj = 150°C – 2.15 – Volts
Total Gate Charge QG VCC = 300V, IC = 15A, VGE = 15V – 45 – nC
Emitter-Collector Voltage VEC IE = 15A, VGE = 0V – – 2.8 Volts
** Pulse width and repetition rate should be such that device junction temperature rise is negligible.

Dynamic Electrical Characteristics, Tj = 25 °C unless otherwise specified

Characteristics Symbol Test Conditions Min. Typ. Max. Units
Input Capacitance Cies – – 1.5 nF
Output Capacitance Coes VGE = 0V, VCE = 10V – – 0.5 nF
Reverse Transfer Capacitance Cres – – 0.3 nF
Resistive Turn-on Delay Time td(on) – – 120 ns
Load Rise Time tr VCC = 300V, IC = 15A, – – 300 ns
Switching Turn-off Delay Time td(off) VGE1 = VGE2 = 15V, RG = 42Ω – – 200 ns
Times Fall Time tf – – 300 ns
Diode Reverse Recovery Time trr IE = 15A, diE/dt = –30A/µs – – 110 ns
Diode Reverse Recovery Charge Qrr IE = 15A, diE/dt = –30A/µs – 0.04 – µC

Thermal and Mechanical Characteristics, Tj = 25 °C unless otherwise specified

Characteristics Symbol Test Conditions Min. Typ. Max. Units
Thermal Resistance, Junction to Case Rth(j-c) Per IGBT – – 1.30 °C/W
Thermal Resistance, Junction to Case Rth(j-c) Per FWDi – – 3.50 °C/W
Contact Thermal Resistance Rth(c-f) Per Module, Thermal Grease Applied – – 0.092 °C/W

Sep.1998
 MITSUBISHI IGBT MODULES

CM15TF-12H
MEDIUM POWER SWITCHING USE
INSULATED TYPE

TRANSFER CHARACTERISTICS COLLECTOR-EMITTER

OUTPUT CHARACTERISTICS (TYPICAL) SATURATION VOLTAGE CHARACTERISTICS
(TYPICAL) (TYPICAL)
30
30 5
Tj = 25oC VGE = 20V 12 VCE = 10V
VGE = 15V

COLLECTOR CURRENT, IC, (AMPERES)

Tj = 25°C

SATURATION VOLTAGE, VCE(sat), (VOLTS)

COLLECTOR CURRENT, IC, (AMPERES)

15 Tj = 25°C
Tj = 125°C
4 Tj = 125°C
20

COLLECTOR-EMITTER
20
11
3

10 10 2
10

9
1
7
8
0
0 0
0 4 8 12 16 20
0 2 4 6 8 10 0 10 20 30
GATE-EMITTER VOLTAGE, VGE, (VOLTS)
COLLECTOR-EMITTER VOLTAGE, VCE, (VOLTS) COLLECTOR-CURRENT, IC, (AMPERES)

COLLECTOR-EMITTER FREE-WHEEL DIODE CAPACITANCE VS. VCE

SATURATION VOLTAGE CHARACTERISTICS FORWARD CHARACTERISTICS (TYPICAL)
(TYPICAL) (TYPICAL)
101
10 102
Tj = 25°C
SATURATION VOLTAGE, VCE(sat), (VOLTS)

CAPACITANCE, Cies, Coes, Cres, (nF)

EMITTER CURRENT, IE, (AMPERES)

8 Cies
IC = 30A
100
COLLECTOR-EMITTER

6
IC = 15A Coes
101
4 10-1

2 Cres
VGE = 0V
IC = 6A
10-2
0 100 10-1 100 101 102
0 4 8 12 16 20 0 0.8 1.6 2.4 3.2 4.0 COLLECTOR-EMITTER VOLTAGE, VCE, (VOLTS)
GATE-EMITTER VOLTAGE, VGE, (VOLTS) EMITTER-COLLECTOR VOLTAGE, VEC, (VOLTS)

HALF-BRIDGE
SWITCHING CHARACTERISTICS REVERSE RECOVERY CHARACTERISTICS
(TYPICAL) (TYPICAL) GATE CHARGE, VGE
103 103 101 20
GATE-EMITTER VOLTAGE, VGE, (VOLTS)
REVERSE RECOVERY CURRENT, Irr, (AMPERES)

IC = 15A
REVERSE RECOVERY TIME, t rr, (ns)

tf 16
VCC = 200V
SWITCHING TIME, (ns)

12
VCC = 300V
102 102
Irr
100
td(off)
t rr
8
td(on)
VCC = 300V
VGE = ±15V
RG = 42Ω di/dt = -30A/µsec 4
Tj = 125°C Tj = 25°C
tr
101 101 10-1 0
100 101 102 100 101 102 0 10 20 30 40 50 60
COLLECTOR CURRENT, IC, (AMPERES)
EMITTER CURRENT, IE, (AMPERES) GATE CHARGE, QG, (nC)

Sep.1998
 MITSUBISHI IGBT MODULES

CM15TF-12H
MEDIUM POWER SWITCHING USE
INSULATED TYPE

TRANSIENT THERMAL TRANSIENT THERMAL

IMPEDANCE CHARACTERISTICS IMPEDANCE CHARACTERISTICS
(IGBT) (FWDi)
10-3 10-2 10-1 100 101 10-3 10-2 10-1 100 101

NORMALIZED TRANSIENT THERMAL IMPEDANCE, Z th(j-c)

NORMALIZED TRANSIENT THERMAL IMPEDANCE, Z th(j-c)

101 101
Single Pulse Single Pulse
TC = 25°C TC = 25°C
Per Unit Base = R th(j-c) = 1.3°C/W Zth = Rth • (NORMALIZED VALUE)
Per Unit Base = R th(j-c) = 3.5°C/W
Zth = Rth • (NORMALIZED VALUE)

100 100

10-1 10-1 10-1 10-1

10-2 10-2 10-2 10-2

10-3 10-3 10-3 10-3

10-5 10-4 10-3 10-5 10-4 10-3
TIME, (s) TIME, (s)

Sep.1998