MITSUBISHI <INTELLIGENT POWER MODULES>

PM50CS1D060
FLAT-BASE TYPE
INSULATED PACKAGE

PM50CS1D060
FEATURE
Inverter + Drive & Protection IC

• 3 phase 50A/600V CSTBTTM

(The Current senser and the thermal senser with a build-in
CSTBTTM.)
• Monolithic gate drive & protection logic
• Detection, protection & status indication circuits for, short-
circuit, over-temperature & under-voltage

APPLICATION
General purpose inverter, servo drives and other motor controls

PACKAGE OUTLINES Dimensions in mm

120
12.7
7 106 ±0.3
2-2.54

2-2.54

2-2.54

6.5
23.79 10.16 10.16 10.16 5-2.54
φ2.5
8.5

1 4 7 10 15 2-φ5.5
16.5

67.4 MOUNTING HOLES

50

50
39

5.57 9
16.5

W V U N P
25

(10)
2.5

15 19 19 19 19 5-M4 NUT

Terminal code
11.6

1. VWPC 11. VN1

2. WP 12. WN
3. VWP1 13. VN
31.2

4. VVPC 14. UN
30
28

L A B E L 5. VP 15. Fo
6. VVP1
7. VUPC
8. UP
9. VUP1
10. VNC

May 2009

1
 MITSUBISHI <INTELLIGENT POWER MODULES>

PM50CS1D060
FLAT-BASE TYPE
INSULATED PACKAGE

INTERNAL FUNCTIONS BLOCK DIAGRAM

Rfo = 1.5kΩ
WP VP UP
Fo VNC WN VN1 VN UN VWPC VWP1 VVPC VVP1 VUPC VUP1

Rfo

Gnd In Fo Vcc Gnd In Fo Vcc Gnd In Fo Vcc Gnd In Vcc Gnd In Vcc Gnd In Vcc

Gnd Si Out OT Gnd Si Out OT Gnd Si Out OT Gnd Si Out OT Gnd Si Out OT Gnd Si Out OT

N W V U P

MAXIMUM RATINGS (Tj = 25°C, unless otherwise noted)

INVERTER PART
Symbol Parameter Condition Ratings Unit
VCES Collector-Emitter Voltage VD = 15V, VCIN = 15V 600 V
±IC Collector Current TC = 25°C (Note-1) 50 A
±ICP Collector Current (Peak) TC = 25°C 100 A
PC Collector Dissipation TC = 25°C (Note-1) 312 W
Tj Junction Temperature –20 ~ +150 °C
*: Tc measurement point is just under the chip.

CONTROL PART
Symbol Parameter Condition Ratings Unit
Applied between : VUP1-VUPC, VVP1-VVPC
VD Supply Voltage 20 V
VWP1-VWPC, VN1-VNC
Applied between : UP-VUPC, VP-VVPC, WP-VWPC
VCIN Input Voltage 20 V
UN • VN • WN-VNC
VFO Fault Output Supply Voltage Applied between : FO-VNC 20 V
IFO Fault Output Current Sink current at FO terminals 20 mA

May 2009

2
 MITSUBISHI <INTELLIGENT POWER MODULES>

PM50CS1D060
FLAT-BASE TYPE
INSULATED PACKAGE

TOTAL SYSTEM
Symbol Parameter Condition Ratings Unit
Supply Voltage Protected by VD = 13.5 ~ 16.5V
VCC(PROT) Inverter Part, Tj = +125°C Start 400 V
SC
VCC(surge) Supply Voltage (Surge) Applied between : P-N, Surge value 500 V
Tstg Storage Temperature –40 ~ +125 °C
Viso Isolation Voltage 60Hz, Sinusoidal, Charged part to Base, AC 1 min. 2500 Vrms

THERMAL RESISTANCES
Limits
Symbol Parameter Condition Unit
Min. Typ. Max.
Rth(j-c)Q Junction to case Thermal Inverter IGBT part (per 1 element) (Note-1) — — 0.40
Rth(j-c)F Resistances Inverter FWDi part (per 1 element) (Note-1) — — 0.68
°C/W
Case to fin, (per 1 module)
Rth(c-f) Contact Thermal Resistance — — 0.046
Thermal grease applied (Note-1)

(Note-1) Tc (under the chip) measurement point is below. (unit : mm)

arm UP VP WP UN VN WN
axis IGBT FWDi IGBT FWDi IGBT FWDi IGBT FWDi IGBT FWDi IGBT FWDi
X 21.4 21.4 65.0 65.0 90.0 90.0 36.0 36.0 51.0 51.0 76.0 76.0
Y 4.4 –5.1 4.4 –5.1 4.4 –5.1 –0.6 –10.1 –0.6 –10.1 –0.6 –10.1

Bottom view

P N U V W

ELECTRICAL CHARACTERISTICS (Tj = 25°C, unless otherwise noted)

INVERTER PART
Limits
Symbol Parameter Condition Unit
Min. Typ. Max.
Collector-Emitter Saturation VD = 15V, IC = 50A Tj = 25°C — 1.80 2.40
VCE(sat) V
Voltage VCIN = 0V, Pulsed (Fig. 1) Tj = 125°C — 1.85 2.50
VEC FWDi Forward Voltage –IC = 50A, VD = 15V, VCIN = 15V (Fig. 2) — 1.85 2.80 V
ton 0.4 0.8 1.8
VD = 15V, VCIN = 0V↔15V
trr — 0.3 0.6
VCC = 300V, IC = 50A µs
tc(on) Switching Time — 0.4 1.0
Tj = 125°C
toff — 1.4 2.4
Inductive Load (Fig. 3,4)
tc(off) — 0.3 0.6
Collector-Emitter Cutoff Tj = 25°C — — 1
ICES VCE = VCES, VD = 15V (Fig. 5) mA
Current Tj = 125°C — — 10

May 2009

3
 MITSUBISHI <INTELLIGENT POWER MODULES>

PM50CS1D060
FLAT-BASE TYPE
INSULATED PACKAGE

CONTROL PART
Limits
Symbol Parameter Condition Unit
Min. Typ. Max.
VN1-VNC — 6 12
ID Circuit Current VD = 15V, VCIN = 15V mA
V*P1-V*PC — 2 4
Vth(ON) Input ON Threshold Voltage Applied between : UP-VUPC, VP-VVPC, WP-VWPC 1.2 1.5 1.8
V
Vth(OFF) Input OFF Threshold Voltage UN • VN • WN-VNC 1.7 2.0 2.3
SC Short Circuit Trip Level –20 ≤ Tj ≤ 125°C, VD = 15V (Fig. 3,6) 75 — — A
Short Circuit Current Delay
toff(SC) VD = 15V (Fig. 3,6) — 1.0 — µs
Time
OT Trip level 135 — —
Over Temperature Protection Detect Temperature of IGBT chip °C
OT(hys) Hysteresis — 20 —
UV Supply Circuit Under-Voltage Trip level 11.5 12.0 12.5
–20 ≤ Tj ≤ 125°C V
UVr Protection Reset level — 12.5 —
IFO(H) — — 0.01
Fault Output Current VD = 15V, VCIN = 15V (Note-2) mA
IFO(L) — 10 15
Minimum Fault Output Pulse
tFO VD = 15V (Note-2) 1.0 1.8 — ms
Width
(Note-2) Fault output is given only when the internal SC, OT & UV protection.
Fault output of SC, OT & UV protection operate by lower arms.
Fault output of SC protection given pulse.
Fault output of OT, UV protection given pulse while over trip level.

MECHANICAL RATINGS AND CHARACTERISTICS

Limits
Symbol Parameter Condition Unit
Min. Typ. Max.
Mounting part screw : M5 2.5 3.0 3.5
— Mounting torque N•m
Main terminal part screw : M4 1.5 1.7 2.0
— Weight — — 400 — g

RECOMMENDED CONDITIONS FOR USE

Symbol Parameter Condition Recommended value Unit
VCC Supply Voltage Applied across P-N terminals ≤ 400 V
Applied between : VUP1-VUPC, VVP1-VVPC
VD Control Supply Voltage 15.0 ± 1.5 V
VWP1-VWPC, VN1-VNC (Note-3)
VCIN(ON) Input ON Voltage Applied between : UP-VUPC, VP-VVPC, WP-VWPC ≤ 0.8
V
VCIN(OFF) Input OFF Voltage UN • VN • WN-VNC ≥ 9.0
fPWM PWM Input Frequency Using Application Circuit of Fig. 8 ≤ 20 kHz
Arm Shoot-through Blocking
tdead For IPM’s each input signals (Fig. 7) ≥ 2.0 µs
Time

(Note-3) With ripple satisfying the following conditions: dv/dt swing ≤ ±5V/µs, Variation ≤ 2V peak to peak

≤ ± 5V/µs

≤ 2V

15V

GND

May 2009

4
 MITSUBISHI <INTELLIGENT POWER MODULES>

PM50CS1D060
FLAT-BASE TYPE
INSULATED PACKAGE

PRECAUTIONS FOR TESTING

1. Before applying any control supply voltage (VD), the input terminals should be pulled up by resistors, etc. to their corre-
sponding supply voltage and each input signal should be kept off state.
After this, the specified ON and OFF level setting for each input signal should be done.
2. When performing “SC” tests, the turn-off surge voltage spike at the corresponding protection operation should not be al-
lowed to rise above VCES rating of the device.
(These test should not be done by using a curve tracer or its equivalent.)
P, (U,V,W) P, (U,V,W)

IN IN

VCIN
Fo
V Ic VCIN
Fo
V –Ic
(0V) (15V)

U,V,W, (N) U,V,W, (N)

VD (all) VD (all)
Fig. 1 VCE(sat) Test Fig. 2 VEC, (VFM) Test

a) Lower Arm Switching

P

trr VCE
VCIN Signal input
(15V) (Upper Arm) U,V,W Ic
Irr
CS Vcc
90%
Signal input Fo 90%
VCIN (Lower Arm)
N
VD (all) Ic 10% 10%
b) Upper Arm Switching 10% 10%
P tc(on) tc(off)

VCIN Signal input

(Upper Arm) VCIN
U,V,W
CS Vcc td(on) tr td(off) tf
VCIN Fo
Signal input
(15V) (Lower Arm) (ton = td(on) + tr) (toff = td(off) + tf)
N

VD (all) Ic

Fig. 3 Switching time and SC test circuit Fig. 4 Switching time test waveform

VCIN
Short Circuit Current

P, (U,V,W)
A Constant Current

IN SC Trip
Fo Pulse VCE
VCIN
(15V) Ic

U,V,W, (N) Fo
VD (all)

toff(SC)
Fig. 5 ICES Test

Fig. 6 SC test waveform

IPM’ input signal VCIN

(Upper Arm)
1.5V 2V 1.5V t
0V
IPM’ input signal VCIN
(Lower Arm)
2V 1.5V 2V t
0V
tdead tdead tdead

1.5V: Input on threshold voltage Vth(on) typical value, 2V: Input off threshold voltage Vth(off) typical value

Fig. 7 Dead time measurement point example

May 2009

5
 MITSUBISHI <INTELLIGENT POWER MODULES>

PM50CS1D060
FLAT-BASE TYPE
INSULATED PACKAGE

P
20kΩ ≥10µ
VUP1 OT
Vcc
→ OUT
+
VD IF
UP Si
In
–
VUPC U
GND GND
≥0.1µ
VVP1 OT
Vcc
OUT
VD VP
Si
In
VVPC V
GND GND M
VWP1 OT
Vcc
OUT
VD WP Si
In
VWPC W
GND GND

20kΩ
OT
→ Vcc
≥10µ OUT
Fo
IF Si
UN
In
N
GND GND
≥0.1µ
20kΩ OT
→ ≥10µ
Vcc
OUT
IF Fo Si
VN
In
GND GND
≥0.1µ
20kΩ VN1 OT
→ Vcc
≥10µ
Fo OUT
VD IF
WN Si
In
GND GND
≥0.1µ VNC

5V 1kΩ
Fo Rfo

: Interface which is the same as U-phase

Fig. 8 Application Example Circuit

NOTES FOR STABLE AND SAFE OPERATION ;

•Design the PCB pattern to minimize wiring length between opto-coupler and IPM’s input terminal, and also to minimize the
stray capacity between the input and output wirings of opto-coupler.
•Connect low impedance capacitor between the Vcc and GND terminal of each fast switching opto-coupler.
•Fast switching opto-couplers: tPLH, tPHL ≤ 0.8µs, Use High CMR type.
•Slow switching opto-coupler: CTR > 100%
•Use 4 isolated control power supplies (VD). Also, care should be taken to minimize the instantaneous voltage charge of the
power supply.
•Make inductance of DC bus line as small as possible, and minimize surge voltage using snubber capacitor between P and N
terminal.
•Use line noise filter capacitor (ex. 4.7nF) between each input AC line and ground to reject common-mode noise from AC line
and improve noise immunity of the system.

May 2009

6
 MITSUBISHI <INTELLIGENT POWER MODULES>

PM50CS1D060
FLAT-BASE TYPE
INSULATED PACKAGE

PERFORMANCE CURVES
COLLECTOR-EMITTER SATURATION
OUTPUT CHARACTERISTICS VOLTAGE (VS. Ic) CHARACTERISTICS
(TYPICAL) (TYPICAL)
80 2.5

SATURATION VOLTAGE VCE(sat) (V)

Tj = 25°C VD = 15V
VD = 17V
COLLECTOR CURRENT IC (A)

70
15V 2.0

COLLECTOR-EMITTER
60
13V
50 1.5
40

30 1.0

20
0.5
10 Tj = 25°C
Tj = 125°C
0 0
0 0.5 1.0 1.5 2.0 2.5 0 10 20 30 40 50 60 70 80

COLLECTOR-EMITTER VOLTAGE VCE(sat) (V) COLLECTOR CURRENT IC (A)

COLLECTOR-EMITTER SATURATION
VOLTAGE (VS. VD) CHARACTERISTICS DIODE FORWARD CHARACTERISTICS
(TYPICAL) (TYPICAL)
COLLECTOR RECOVERY CURRENT –IC (A)

102
SATURATION VOLTAGE VCE(sat) (V)

2.4 VD = 15V
7
5
2.2 4
COLLECTOR-EMITTER

3
2.0 2

1.8
101
1.6 7
5
4
1.4
3
IC = 50A
1.2 2
Tj = 25°C Tj = 25°C
Tj = 125°C Tj = 125°C
1.0 100
12 13 14 15 16 17 18 0 0.5 1.0 1.5 2.0 2.5

CONTROL POWER SUPPLY VOLTAGE VD (V) EMITTER-COLLECTOR VOLTAGE VEC (V)

SWITCHING TIME (ton, toff) CHARACTERISTICS SWITCHING TIME (tc(on), tc(off)) CHARACTERISTICS
(TYPICAL) (TYPICAL)
101 100
VCC = 300V VCC = 300V
SWITCHING TIME tc(on), tc(off) (µs)

7
VD = 15V VD = 15V
SWITCHING TIME ton, toff (µs)

5 7
4 Tj = 25°C Tj = 25°C
3 Tj = 125°C Tj = 125°C
Inductive load 5 Inductive load
2
4
toff
100 3
7 tc(off)
5 ton
4 2
3
2
tc(on)
10–1 0 10–1 0
10 2 3 4 5 7 101 2 3 4 5 7 102 10 2 3 4 5 7 101 2 3 4 5 7 102

COLLECTOR CURRENT IC (A) COLLECTOR CURRENT IC (A)

May 2009

7
 MITSUBISHI <INTELLIGENT POWER MODULES>

PM50CS1D060
FLAT-BASE TYPE
INSULATED PACKAGE

SWITCHING LOSS CHARACTERISTICS DIODE REVERSE RECOVERY CHARACTERISTICS

(TYPICAL) (TYPICAL)
2.5 1.0 50
SWITCHING LOSS Eon, Eoff (mJ/pulse)

VCC = 300V VCC = 300V

VD = 15V 0.9 VD = 15V 45

RECOVERY CURRENT lrr (A)

Tj = 25°C Eon T j = 25°C

RECOVERY TIME trr (µs)

2.0 0.8 40
Tj = 125°C Tj = 125°C
Inductive load 0.7 Inductive load 35
1.5 0.6 30
Eoff 0.5 25
1.0 0.4 Irr 20
0.3 15
0.5 0.2 10
trr
0.1 5
0 0 0
0 10 20 30 40 50 60 0 10 20 30 40 50 60

COLLECTOR CURRENT IC (A) COLLECTOR RECOVERY CURRENT –IC (A)

SWITCHING RECOVERY LOSS CHARACTERISTICS ID VS. fc CHARACTERISTICS

(TYPICAL) (TYPICAL)
1.6 25
VCC = 300V VD = 15V
SWITCHING LOSS Err (mJ/pulse)

1.4 VD = 15V Tj = 25°C

Tj = 25°C 20 Tj = 125°C
1.2 Tj = 125°C N-side
Inductive load
1.0 15
ID (mA)

0.8

0.6 10

0.4 P-side
5
0.2

0 0
0 10 20 30 40 50 60 0 5 10 15 20 25

COLLECTOR RECOVERY CURRENT –IC (A) fc (kHz)

UV TRIP LEVEL VS. Tj CHARACTERISTICS SC TRIP LEVEL VS. Tj CHARACTERISTICS

(TYPICAL) (TYPICAL)
20 2.0
UVt VD = 15V
18 UVr 1.8
16 1.6
14 1.4
12 1.2
UVt /UVr

SC

10 1.0
8 0.8
6 0.6
4 0.4
2 0.2
0 0
–50 0 50 100 150 –50 0 50 100 150

Tj (°C) Tj (°C)

May 2009

8
 MITSUBISHI <INTELLIGENT POWER MODULES>

PM50CS1D060
FLAT-BASE TYPE
INSULATED PACKAGE

TRANSIENT THERMAL
IMPEDANCE CHARACTERISTICS
(TYPICAL)
100
7
THERMAL IMPEDANCE Zth(j – c)

5
NORMALIZED TRANSIENT

3
2

10–1
7
5
3
2

10–2 Single Pulse

7
5 IGBT part;
3 Per unit base = Rth(j – c)Q = 0.4°C/ W
2 FWDi part;
Per unit base = Rth(j – c)F = 0.68°C/ W
10–3 –5
10 2 3 5 710–4 2 3 5 710–32 3 5 710–2 2 3 5 710–12 3 5 7100 2 3 5 7101

t(sec)

May 2009