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PD - 93894A

IRFB23N15D
SMPS MOSFET IRFS23N15D
IRFSL23N15D
HEXFET® Power MOSFET
Applications VDSS RDS(on) max ID
l High frequency DC-DC converters
150V 0.090Ω 23A

Benefits
l Low Gate-to-Drain Charge to Reduce
Switching Losses
l Fully Characterized Capacitance Including
Effective COSS to Simplify Design, (See
App. Note AN1001)
l Fully Characterized Avalanche Voltage TO-220AB D2Pak TO-262
IRFB23N15D IRFS23N15D IRFSL23N15D
and Current

Absolute Maximum Ratings

Parameter Max. Units
ID @ TC = 25°C Continuous Drain Current, VGS @ 10V 23
ID @ TC = 100°C Continuous Drain Current, VGS @ 10V 17 A
IDM Pulsed Drain Current  92
PD @TA = 25°C Power Dissipation ‡ 3.8 W
PD @TC = 25°C Power Dissipation 136
Linear Derating Factor 0.9 W/°C
VGS Gate-to-Source Voltage ± 30 V
dv/dt Peak Diode Recovery dv/dt ƒ 4.1 V/ns
TJ Operating Junction and -55 to + 175
TSTG Storage Temperature Range °C
Soldering Temperature, for 10 seconds 300 (1.6mm from case )
Mounting torqe, 6-32 or M3 screw† 10 lbf•in (1.1N•m)

Typical SMPS Topologies

l Telecom 48V input DC-DC Active Clamp Reset Forward Converter

Notes  through ‡ are on page 11

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IRFB/IRFS/IRFSL23N15D
Static @ TJ = 25°C (unless otherwise specified)
Parameter Min. Typ. Max. Units Conditions
V(BR)DSS Drain-to-Source Breakdown Voltage 150 ––– ––– V VGS = 0V, ID = 250µA
∆V(BR)DSS/∆TJ Breakdown Voltage Temp. Coefficient ––– 0.18 ––– V/°C Reference to 25°C, ID = 1mA
RDS(on) Static Drain-to-Source On-Resistance ––– ––– 0.090 Ω VGS = 10V, ID = 14A „
VGS(th) Gate Threshold Voltage 3.0 ––– 5.5 V VDS = VGS, ID = 250µA
––– ––– 25 VDS = 150V, VGS = 0V
IDSS Drain-to-Source Leakage Current µA
––– ––– 250 VDS = 120V, VGS = 0V, TJ = 150°C
Gate-to-Source Forward Leakage ––– ––– 100 VGS = 30V
IGSS nA
Gate-to-Source Reverse Leakage ––– ––– -100 VGS = -30V

Dynamic @ TJ = 25°C (unless otherwise specified)

Parameter Min. Typ. Max. Units Conditions
gfs Forward Transconductance 11 ––– ––– S VDS = 25V, ID = 14A
Qg Total Gate Charge ––– 37 56 ID = 14A
Qgs Gate-to-Source Charge ––– 9.6 14 nC VDS = 120V
Qgd Gate-to-Drain ("Miller") Charge ––– 19 29 VGS = 10V, „
td(on) Turn-On Delay Time ––– 10 ––– VDD = 75V
tr Rise Time ––– 32 ––– ns ID = 14A
td(off) Turn-Off Delay Time ––– 18 ––– RG = 5.1Ω
tf Fall Time ––– 8.4 ––– VGS = 10V „
Ciss Input Capacitance ––– 1200 ––– VGS = 0V
Coss Output Capacitance ––– 260 ––– VDS = 25V
Crss Reverse Transfer Capacitance ––– 65 ––– pF ƒ = 1.0MHz†
Coss Output Capacitance ––– 1520 ––– VGS = 0V, VDS = 1.0V, ƒ = 1.0MHz
Coss Output Capacitance ––– 120 ––– VGS = 0V, VDS = 120V, ƒ = 1.0MHz
Coss eff. Effective Output Capacitance ––– 210 ––– VGS = 0V, VDS = 0V to 120V …
Avalanche Characteristics
Parameter Typ. Max. Units
EAS Single Pulse Avalanche Energy‚ ––– 260 mJ
IAR Avalanche Current ––– 14 A
EAR Repetitive Avalanche Energy ––– 13.6 mJ
Thermal Resistance
Parameter Typ. Max. Units
RθJC Junction-to-Case ––– 1.1
RθCS Case-to-Sink, Flat, Greased Surface † 0.50 ––– °C/W
RθJA Junction-to-Ambient† ––– 62
RθJA Junction-to-Ambient‡ ––– 40
Diode Characteristics
Parameter Min. Typ. Max. Units Conditions
D
IS Continuous Source Current MOSFET symbol
––– ––– 23
(Body Diode) showing the
A
ISM Pulsed Source Current integral reverse G

––– ––– 92
(Body Diode)  p-n junction diode. S

VSD Diode Forward Voltage ––– ––– 1.3 V TJ = 25°C, IS = 14A, VGS = 0V „
trr Reverse Recovery Time ––– 150 220 ns TJ = 25°C, IF = 14A
Qrr Reverse RecoveryCharge ––– 0.8 1.2 µC di/dt = 100A/µs „
ton Forward Turn-On Time Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)
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IRFB/IRFS/IRFSL23N15D

100 VGS 100 VGS

TOP 15V TOP 15V
12V 12V
10V 10V
I D , Drain-to-Source Current (A)

I D , Drain-to-Source Current (A)

8.0V 8.0V
7.0V 7.0V
6.0V 6.0V
10 5.5V 5.5V
BOTTOM 5.0V BOTTOM 5.0V

1 10

5.0V
0.1
5.0V

20µs PULSE WIDTH 20µs PULSE WIDTH

TJ = 25 °C TJ = 175 °C
0.01 1
0.1 1 10 100 0.1 1 10 100
VDS , Drain-to-Source Voltage (V) VDS , Drain-to-Source Voltage (V)

Fig 1. Typical Output Characteristics Fig 2. Typical Output Characteristics

100 3.5
ID = 23A
R DS(on) , Drain-to-Source On Resistance

3.0
I D , Drain-to-Source Current (A)

TJ = 175 ° C
2.5
10
(Normalized)

2.0

1.5
TJ = 25 ° C
1
1.0

0.5
V DS = 50V
20µs PULSE WIDTH VGS = 10V
0.1 0.0
4 5 6 7 8 9 10 11 12 -60 -40 -20 0 20 40 60 80 100 120 140 160 180
VGS , Gate-to-Source Voltage (V) TJ , Junction Temperature ( °C)

Fig 3. Typical Transfer Characteristics Fig 4. Normalized On-Resistance

Vs. Temperature
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IRFB/IRFS/IRFSL23N15D

10000 20
VGS = 0V, f = 1 MHZ ID = 14A
Ciss = Cgs + Cgd, Cds SHORTED VDS = 120V

VGS , Gate-to-Source Voltage (V)

Crss = Cgd VDS = 75V
16
Coss = Cds + Cgd VDS = 30V
Ciss
C, Capacitance(pF)

1000
12

Coss
8
100

Crss
4

FOR TEST CIRCUIT

10 SEE FIGURE 13
0
1 10 100 1000 0 10 20 30 40 50 60
VDS , Drain-to-Source Voltage (V) QG , Total Gate Charge (nC)

Fig 5. Typical Capacitance Vs. Fig 6. Typical Gate Charge Vs.

Drain-to-Source Voltage Gate-to-Source Voltage

100 1000
OPERATION IN THIS AREA LIMITED
BY RDS(on)
ISD , Reverse Drain Current (A)

I D , Drain Current (A)

10 100
TJ = 175 ° C 10us

TJ = 25 ° C 100us
1 10

1ms
TC = 25 ° C
TJ = 175 ° C
10ms
V GS = 0 V Single Pulse
0.1 1
0.2 0.4 0.6 0.8 1.0 1.2 1.4 1 10 100 1000
VSD ,Source-to-Drain Voltage (V) VDS , Drain-to-Source Voltage (V)

Fig 7. Typical Source-Drain Diode Fig 8. Maximum Safe Operating Area

Forward Voltage
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IRFB/IRFS/IRFSL23N15D

25 RD
VDS

VGS
20 D.U.T.
RG
+
I D , Drain Current (A)

-VDD

15 10V
Pulse Width ≤ 1 µs
Duty Factor ≤ 0.1 %

10
Fig 10a. Switching Time Test Circuit

5 VDS
90%

0
25 50 75 100 125 150 175
TC , Case Temperature ( ° C)
10%
VGS
Fig 9. Maximum Drain Current Vs. td(on) tr t d(off) tf
Case Temperature
Fig 10b. Switching Time Waveforms

10
Thermal Response (Z thJC )

1
D = 0.50

0.20

0.10 P DM
0.1
0.05 t1
0.02 SINGLE PULSE t2
0.01 (THERMAL RESPONSE)
Notes:
1. Duty factor D = t 1 / t 2
2. Peak T J = P DM x Z thJC + TC
0.01
0.00001 0.0001 0.001 0.01 0.1
t1 , Rectangular Pulse Duration (sec)

Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case

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IRFB/IRFS/IRFSL23N15D

600
1 5V ID

EAS , Single Pulse Avalanche Energy (mJ)

TOP 14A
500 9.8A
L D R IV E R BOTTOM 5.6A
VDS

400
RG D .U .T +
V
- DD
IA S A
300
20V
tp 0 .0 1 Ω

200
Fig 12a. Unclamped Inductive Test Circuit

100
V (B R )D SS
tp
0
25 50 75 100 125 150 175
Starting TJ , Junction Temperature ( °C)

Fig 12c. Maximum Avalanche Energy

IAS Vs. Drain Current

Fig 12b. Unclamped Inductive Waveforms

Current Regulator
Same Type as D.U.T.

QG
50KΩ
.2µF
10 V 12V
.3µF
QGS QGD +
V
D.U.T. - DS

VG VGS

3mA

IG ID
Charge Current Sampling Resistors

Fig 13a. Basic Gate Charge Waveform Fig 13b. Gate Charge Test Circuit

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IRFB/IRFS/IRFSL23N15D

Peak Diode Recovery dv/dt Test Circuit

+ Circuit Layout Considerations

D.U.T
• Low Stray Inductance
• Ground Plane
ƒ
• Low Leakage Inductance
Current Transformer
-

+
‚
„
- +
-


RG • dv/dt controlled by RG +
• Driver same type as D.U.T. VDD
-
• ISD controlled by Duty Factor "D"
• D.U.T. - Device Under Test

Driver Gate Drive

P.W.
Period D=
P.W. Period

VGS=10V *

D.U.T. ISD Waveform

Reverse
Recovery Body Diode Forward
Current Current
di/dt
D.U.T. VDS Waveform
Diode Recovery
dv/dt
VDD

Re-Applied
Voltage Body Diode Forward Drop
Inductor Curent

Ripple ≤ 5% ISD

* VGS = 5V for Logic Level Devices

Fig 14. For N-Channel HEXFET® Power MOSFETs

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IRFB/IRFS/IRFSL23N15D

TO-220AB Package Outline

Dimensions are shown in millimeters (inches)

1 0 .5 4 (.4 1 5 ) 3 .7 8 (.1 4 9 ) -B -
2 .8 7 (.1 1 3 ) 1 0 .2 9 (.4 0 5 ) 3 .5 4 (.1 3 9 ) 4 .6 9 (.1 8 5 )
2 .6 2 (.1 0 3 ) 4 .2 0 (.1 6 5 )
-A - 1 .3 2 (.0 5 2 )
1 .2 2 (.0 4 8 )
6.4 7 (.2 5 5 )
6.1 0 (.2 4 0 )
4
1 5 .2 4 (.6 0 0 )
1 4 .8 4 (.5 8 4 )
1 .1 5 (.0 4 5 ) L E A D A S S IG N M E N T S
M IN 1 - GATE
1 2 3 2 - D R A IN
3 - S OU RC E
4 - D R A IN
1 4 .0 9 (.5 5 5 )
1 3 .4 7 (.5 3 0 ) 4 .0 6 (.1 6 0 )
3 .5 5 (.1 4 0 )

0 .9 3 (.0 3 7 ) 0 .5 5 (.0 2 2 )
3X 3X
0 .6 9 (.0 2 7 ) 0 .4 6 (.0 1 8 )
1 .4 0 (.0 5 5 )
3X
1 .1 5 (.0 4 5 ) 0 .3 6 (.0 1 4 ) M B A M
2 .9 2 (.1 1 5 )
2 .6 4 (.1 0 4 )
2 .5 4 (.1 0 0)
2X
N O TE S :
1 D IM E N S IO N IN G & T O L E R A N C IN G P E R A N S I Y 1 4 .5 M , 1 9 8 2 . 3 O U T L IN E C O N F O R M S T O J E D E C O U T L IN E T O -2 2 0 A B .
2 C O N T R O L L IN G D IM E N S IO N : IN C H 4 H E A T S IN K & L E A D M E A S U R E M E N T S D O N O T IN C L U D E B U R R S .

TO-220AB Part Marking Information

E X A M P L E : T H IS IS A N IR F 1 0 1 0
W IT H A S S E M B L Y A
LOT C ODE 9B1M IN T E R N A T IO N A L PART NU M BER
R E C T IF IE R
IR F 1 0 1 0
LOGO 9246
9B 1M D ATE CO DE
ASSEMBLY
(Y Y W W )
LOT CODE
YY = YEAR
W W = W EEK

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IRFB/IRFS/IRFSL23N15D

D2Pak Package Outline

1 0.54 (.4 15) -B - 1 0.16 (.4 00 )

1 0.29 (.4 05) 4.69 (.1 85) RE F.
1.4 0 (.055 ) 4.20 (.1 65)
-A- 1.3 2 (.05 2)
M AX. 1.2 2 (.04 8)
2
6.47 (.2 55 )
6.18 (.2 43 )

1.7 8 (.07 0) 15 .4 9 (.6 10) 2.7 9 (.110 )

1.2 7 (.05 0) 1 3 14 .7 3 (.5 80) 2.2 9 (.090 )

5 .28 (.20 8) 2.61 (.1 03 )

4 .78 (.18 8) 2.32 (.0 91 )

8.8 9 (.3 50 )
1.40 (.0 55) 1.3 9 (.0 5 5) R E F.
3X
1.14 (.0 45) 0 .93 (.03 7 ) 0.5 5 (.022 ) 1.1 4 (.0 4 5)
3X 0.4 6 (.018 )
0 .69 (.02 7 )
5 .08 (.20 0) 0 .25 (.01 0 ) M B A M M IN IM U M R E CO M M E ND E D F O O TP R IN T

1 1.43 (.4 50 )

NO TE S: LE A D A SS IG N M E N TS 8.89 (.3 50 )
1 D IM EN S IO N S A FTER SO L D ER D IP. 1 - G A TE
2 - D R AIN 17 .78 (.70 0)
2 D IM EN S IO N IN G & TO LE RA N C IN G PE R A N S I Y1 4.5M , 198 2.
3 - S O U RC E
3 C O N TRO L LIN G D IM EN SIO N : IN C H .
4 H E ATSINK & L EA D D IM EN S IO N S D O N O T IN C LU D E B UR R S.
3 .8 1 (.15 0)

2.5 4 (.100 )
2 .08 (.08 2) 2X
2X

D2Pak Part Marking Information

A
IN TE R N A TIO N A L PART NUM BER
R E C T IF IE R
F530S
LO G O
9 24 6
9B 1M DATE CODE
(Y YW W )
A S S E M B LY
YY = Y E A R
LO T C O D E
W W = W EEK
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IRFB/IRFS/IRFSL23N15D

TO-262 Package Outline

TO-262 Part Marking Information

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IRFB/IRFS/IRFSL23N15D
D2Pak Tape & Reel Information
TR R

1 .6 0 (.0 6 3 )
1 .5 0 (.0 5 9 )
1 .6 0 (.0 6 3 )
4 .1 0 ( .1 6 1 ) 1 .5 0 (.0 5 9 )
3 .9 0 ( .1 5 3 ) 0.3 6 8 (.01 4 5 )
0.3 4 2 (.01 3 5 )

F E E D D IR E C TIO N 1 .8 5 ( .0 7 3 ) 1 1.6 0 (.4 57 )

1 .6 5 ( .0 6 5 ) 1 1.4 0 (.4 49 ) 2 4 .3 0 (.9 5 7 )
1 5 .42 (.60 9 )
2 3 .9 0 (.9 4 1 )
1 5 .22 (.60 1 )
TRL
1 .75 (.06 9 )
1 0.9 0 (.4 2 9) 1 .25 (.04 9 )
1 0.7 0 (.4 2 1) 4 .7 2 (.1 3 6)
16 .1 0 (.63 4 ) 4 .5 2 (.1 7 8)
15 .9 0 (.62 6 )

F E E D D IR E C T IO N

13.50 (.532 ) 2 7.4 0 (1.079 )

12.80 (.504 ) 2 3.9 0 (.9 41)

3 30 .00 6 0.0 0 (2.36 2)

( 14.1 73 ) M IN .
MAX.

30.4 0 (1.19 7)
N O TE S : M A X.
1 . CO M F OR M S TO E IA -418 . 26 .40 (1 .03 9) 4
2 . CO N TR O L LIN G D IM E N SIO N : M IL LIM E T ER . 24 .40 (.9 61 )
3 . DIM E NS IO N M EA S UR E D @ H U B.
3
4 . IN C LU D ES FL AN G E DIST O R T IO N @ O UT E R E D G E.
Notes:
 Repetitive rating; pulse width limited by „ Pulse width ≤ 300µs; duty cycle ≤ 2%.
max. junction temperature.
… Coss eff. is a fixed capacitance that gives the same charging time
‚ Starting TJ = 25°C, L = 2.7mH
RG = 25Ω, IAS = 14A. as Coss while VDS is rising from 0 to 80% VDSS

ƒ ISD ≤ 14A, di/dt ≤ 240A/µs, VDD ≤ V(BR)DSS, † This is only applied to TO-220AB package
TJ ≤ 175°C
‡ This is applied to D2Pak, when mounted on 1" square PCB ( FR-4 or G-10 Material ).
For recommended footprint and soldering techniques refer to application note #AN-994.

IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105
IR EUROPEAN REGIONAL CENTER: 439/445 Godstone Rd, Whyteleafe, Surrey CR3 OBL, UK Tel: ++ 44 (0)20 8645 8000
IR CANADA: 15 Lincoln Court, Brampton, Ontario L6T3Z2, Tel: (905) 453 2200
IR GERMANY: Saalburgstrasse 157, 61350 Bad Homburg Tel: ++ 49 (0) 6172 96590
IR ITALY: Via Liguria 49, 10071 Borgaro, Torino Tel: ++ 39 011 451 0111
IR JAPAN: K&H Bldg., 2F, 30-4 Nishi-Ikebukuro 3-Chome, Toshima-Ku, Tokyo 171 Tel: 81 (0)3 3983 0086
IR SOUTHEAST ASIA: 1 Kim Seng Promenade, Great World City West Tower, 13-11, Singapore 237994 Tel: ++ 65 (0)838 4630
IR TAIWAN:16 Fl. Suite D. 207, Sec. 2, Tun Haw South Road, Taipei, 10673 Tel: 886-(0)2 2377 9936
Data and specifications subject to change without notice. 6/00
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