IRGP4790DPbF
IRGP4790D-EPbF
Insulated Gate Bipolar Transistor with Ultrafast Soft Recovery Diode
VCES = 650V
  C  
IC = 90A, TC =100°C

tSC 5.5µs, TJ(max) = 175°C E

G E C
C G
VCE(ON) typ. = 1.7V @ IC = 75A G
E
IRGP4790DPbF  IRGP4790D‐EPbF 
Applications n-channel TO‐247AC  TO‐247AD 
 Industrial Motor Drive
 UPS G C E
 Solar Inverters Gate Collector Emitter
 Welding

Features Benefits
Low VCE(ON) and Switching Losses High Efficiency in a Wide Range of Applications
5.5µs Short Circuit SOA
Rugged Transient Performance
Square RBSOA
Maximum Junction Temperature 175°C Increased Reliability
Positive VCE (ON) Temperature Coefficient Excellent Current Sharing in Parallel Operation
Lead-Free, RoHs compliant Environmentally friendly

Base part number Package Type Standard Pack Orderable Part Number
Form Quantity
IRGP4790DPbF TO-247AC Tube 25 IRGP4790DPbF
IRGP4790D-EPbF TO-247AD Tube 25 IRGP4790D-EPbF
Absolute Maximum Ratings
Parameter Max. Units
VCES Collector-to-Emitter Voltage 650 V
IC @ TC = 25°C Continuous Collector Current 140
IC @ TC = 100°C Continuous Collector Current 90
ICM Pulse Collector Current, VGE = 15V 225
ILM Clamped Inductive Load Current, VGE = 20V  300 A
IF @ TC = 25°C Diode Continuous Forward Current 65
IF @ TC = 100°C Diode Continuous Forward Current 40
IFM Diode Maximum Forward Current  300
VGE Continuous Gate-to-Emitter Voltage ±20 V
PD @ TC = 25°C Maximum Power Dissipation 455
W
PD @ TC = 100°C Maximum Power Dissipation 230
TJ Operating Junction and -40 to +175
TSTG Storage Temperature Range
Soldering Temperature, for 10 sec. 300 (0.063 in. (1.6mm) from case) C
Mounting Torque, 6-32 or M3 Screw 10 lbf·in (1.1 N·m)
Thermal Resistance
Parameter Min. Typ. Max. Units
RJC (IGBT) Thermal Resistance Junction-to-Case-(each IGBT)  ––– ––– 0.33
RJC (Diode) Thermal Resistance Junction-to-Case-(each Diode)  ––– ––– 1.1
°C/W
RCS Thermal Resistance, Case-to-Sink (flat, greased surface) ––– 0.24 –––
RJA Thermal Resistance, Junction-to-Ambient (typical socket mount) ––– ––– 40

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IRGP4790DPbF/IRGP4790D-EPbF
Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
Parameter Min. Typ. Max. Units Conditions
V(BR)CES Collector-to-Emitter Breakdown Voltage 650 — — V VGE = 0V, IC = 100µA 
V(BR)CES/TJ Temperature Coeff. of Breakdown Voltage — 0.65 — V/°C VGE = 0V, IC = 5.0mA (25°C-175°C)
— 1.7 2.0 V IC = 75A, VGE = 15V, TJ = 25°C
VCE(on) Collector-to-Emitter Saturation Voltage
— 2.1 — IC = 75A, VGE = 15V, TJ = 175°C
VGE(th) Gate Threshold Voltage 5.5 — 7.4 V VCE = VGE, IC = 2.1mA
VGE(th)/TJ Threshold Voltage Temperature Coeff. — -20 — mV/°C VCE = VGE, IC = 2.1mA (25°C-150°C)
gfe Forward Transconductance — 47 — S VCE = 50V, IC = 75A, PW = 20µs
— 1.0 35 µA VGE = 0V, VCE = 650V
ICES Collector-to-Emitter Leakage Current
— 1.2 — mA VGE = 0V, VCE = 650V, TJ = 175°C
IGES Gate-to-Emitter Leakage Current — — ±100 nA VGE = ±20V
— 2.1 2.7 V IF = 75A
VF   Diode Forward Voltage Drop  
— 1.7 — IF = 75A, TJ = 175°C
Switching Characteristics @ TJ = 25°C (unless otherwise specified)
Parameter Min. Typ. Max Units Conditions
Qg Total Gate Charge (turn-on) — 140 210 IC = 75A
Qge Gate-to-Emitter Charge (turn-on) — 50 80 nC VGE = 15V
Qgc Gate-to-Collector Charge (turn-on) — 60 90 VCC = 400V
Eon Turn-On Switching Loss — 2.5 3.4
Eoff Turn-Off Switching Loss — 2.2 3.0 mJ   IC = 75A, VCC = 400V, VGE=15V
Etotal Total Switching Loss — 4.7 6.4 RG = 10, L = 200µH, TJ = 25°C
td(on) Turn-On delay time — 50 70
tr Rise time — 70 90 Energy losses include tail & diode
ns  reverse recovery 
td(off) Turn-Off delay time — 200 225
tf Fall time — 60 80
Eon Turn-On Switching Loss — 3.9 —
Eoff Turn-Off Switching Loss — 2.8 — mJ  IC = 75A, VCC = 400V, VGE=15V
Etotal Total Switching Loss — 6.7 —
RG = 10, L = 200µH, TJ = 175°C
td(on) Turn-On delay time — 50 —
tr Rise time — 70 — Energy losses include tail & diode
ns reverse recovery  
td(off) Turn-Off delay time — 240 —
tf Fall time — 70 —
Cies Input Capacitance — 4430 — VGE = 0V
Coes Output Capacitance — 310 — pF VCC = 30V
Cres Reverse Transfer Capacitance — 130 — f = 1.0MHz
TJ = 175°C, IC = 300A
RBSOA Reverse Bias Safe Operating Area FULL SQUARE VCC = 520V, Vp ≤ 650V
VGE = +20V to 0V
TJ = 150°C,VCC = 400V, Vp ≤ 650V
SCSOA   Short Circuit Safe Operating Area   5.5  —  —  µs  
VGE = +15V to 0V
Erec Reverse Recovery Energy of the Diode — 770 — µJ TJ = 175°C
trr Diode Reverse Recovery Time — 170 — ns VCC = 400V, IF = 75A
Irr Peak Reverse Recovery Current — 27 — A VGE = 15V, Rg = 10

Notes:
 VCC = 80% (VCES), VGE = 20V.
 R is measured at TJ of approximately 90°C.
 Refer to AN-1086 for guidelines for measuring V(BR)CES safely.
 Maximum limits are based on statistical sample size characterization.
 Pulse width limited by max. junction temperature.
 Values influenced by parasitic L and C in measurement.

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IRGP4790DPbF/IRGP4790D-EPbF
140
For both:
Duty cycle : 50%
120 Tj = 175°C
Tcase = 100°C
Gate drive as specified
100 Power Dissipation = 208.3W
Load Current ( A )

Square Wave:
80 VCC

60 I

40 Diode as specified

20
0.1 1 10 100
f , Frequency ( kHz )
Fig. 1 - Typical Load Current vs. Frequency
(Load Current = IRMS of fundamental)

160 500

140
400
120

100 300
Ptot (W)
IC (A)

80
200
60

40
100
20

0 0
25 50 75 100 125 150 175 25 50 75 100 125 150 175
TC (°C) TC (°C)

Fig. 2 - Maximum DC Collector Current vs. Fig. 3 - Power Dissipation vs.

Case Temperature Case Temperature
1000 1000

100
10µsec 100
IC (A)

IC (A)

10 100µsec

1msec 10
1
Tc = 25°C DC
Tj = 175°C
Single Pulse
0.1 1
1 10 100 1000 10000 10 100 1000
VCE (V) VCE (V)

Fig. 4 - Forward SOA Fig. 5 - Reverse Bias SOA

TC = 25°C; TJ ≤ 175°C; VGE = 15V TJ = 175°C; VGE = 20V

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IRGP4790DPbF/IRGP4790D-EPbF
300 300
VGE = 18V VGE = 18V
250 VGE = 15V 250 VGE = 15V
VGE = 12V VGE = 12V
VGE = 10V VGE = 10V
200 200
VGE = 8.0V VGE = 8.0V
ICE (A)

ICE (A)
150 150

100 100

50 50

0 0
0 2 4 6 8 10 0 2 4 6 8 10
V CE (V) V CE (V)

Fig. 6 - Typ. IGBT Output Characteristics Fig. 7 - Typ. IGBT Output Characteristics
TJ = -40°C; tp = 20µs TJ = 25°C; tp = 20µs
300 300
VGE = 18V
250 VGE = 15V 250
VGE = 12V
200 VGE = 10V 200
VGE = 8.0V
ICE (A)

IF (A)

150 150

100 100

-40°C
50 50 25°C
175°C

0 0
0 2 4 6 8 10 0.0 1.0 2.0 3.0 4.0
V CE (V) V F (V)

Fig. 8 - Typ. IGBT Output Characteristics Fig. 9 - Typ. Diode Forward Voltage Drop
TJ = 175°C; tp = 20µs Characteristics
12 12

10 10
ICE = 38A ICE = 38A
8 ICE = 75A 8 ICE = 75A
ICE = 150A ICE = 150A
V CE (V)

V CE (V)

6 6

4 4

2 2

0 0
5 10 15 20 5 10 15 20
V GE (V) V GE (V)

Fig. 10 - Typical VCE vs. VGE Fig. 11 - Typical VCE vs. VGE
TJ = -40°C TJ = 25°C

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IRGP4790DPbF/IRGP4790D-EPbF
12 225

10
180
ICE = 38A
8 ICE = 75A
ICE = 150A 135
V CE (V)

ICE (A)
6
90
TJ = 25°C
4
TJ = 175°C
45
2

0 0
5 10 15 20 2 4 6 8 10 12 14 16
V GE (V) V GE (V)

Fig. 12 - Typical VCE vs. VGE Fig. 13 - Typ. Transfer Characteristics

TJ = 175°C VCE = 50V; tp = 20µs
12 1000

10
tdOFF

8 Swiching Time (ns)

Energy (mJ)

EON
6 tF
100

4
EOFF tdON
2
tR

0
0 25 50 75 100 125 150 10
0 50 100 150
IC (A)
IC (A)
Fig. 14 - Typ. Energy Loss vs. IC Fig. 15 - Typ. Switching Time vs. IC
TJ = 175°C; L = 200µH; VCE = 400V, RG = 10; VGE = 15V TJ = 175°C; L = 200µH; VCE = 400V, RG = 10; VGE = 15V
11 10000

10

9
Swiching Time (ns)

8 1000
Energy (mJ)

tdOFF
7

6 tF
EON
5 tR
100
4
EOFF tdON
3

2
10
0 25 50 75 100
0 20 40 60 80 100 120
Rg ()
R G ()

Fig. 16 - Typ. Energy Loss vs. RG Fig. 17 - Typ. Switching Time vs. RG
TJ = 175°C; L = 200µH; VCE = 400V, ICE = 75A; VGE = 15V TJ = 175°C; L = 200µH; VCE = 400V, ICE = 75A; VGE = 15V

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IRGP4790DPbF/IRGP4790D-EPbF
30 30

RG = 10
25
25
RG = 22
20
IRR (A)

IRR (A)
20 RG = 47
15

15
RG = 100 10

10 5
20 40 60 80 100 120 140 160 0 20 40 60 80 100
IF (A) RG ( 

Fig. 18 - Typ. Diode IRR vs. IF Fig. 19 - Typ. Diode IRR vs. RG
TJ = 175°C TJ = 175°C
30 4.4

150A
4.0
75A
25 10

3.6
QRR (µC)

22
IRR (A)

20
47
3.2
100
38A
15
2.8

10 2.4
200 250 300 350 400 450 500 550 600 200 300 400 500 600 700 800

diF /dt (A/µs) diF /dt (A/µs)

Fig. 20 - Typ. Diode IRR vs. diF/dt Fig. 21 - Typ. Diode QRR vs. diF/dt
VCC = 400V; VGE = 15V; IF = 75A; TJ = 175°C VCC = 400V; VGE = 15V; TJ = 175°C

700 24 400

650 Tsc
20 Isc 330
RG = 10

600
Energy (µJ)

16 260
Current (A)
Time (µs)

RG = 22
550
12 190
500 RG = 47

8 120
450
RG = 100
400 4 50
20 40 60 80 100 120 140 160 8 10 12 14 16 18
IF (A) VGE (V)

Fig. 22 - Typ. Diode ERR vs. IF Fig. 23 - VGE vs. Short Circuit Time
TJ = 175°C VCC = 400V; TC = 150°C

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IRGP4790DPbF/IRGP4790D-EPbF
10000 16

Cies 14 VCES = 400V

VGE, Gate-to-Emitter Voltage (V)

VCES = 300V
12
1000
Capacitance (pF)

10

Coes 6
100
Cres 4

10 0
0 100 200 300 400 500 600 0 20 40 60 80 100 120 140 160
V CE (V) Q G, Total Gate Charge (nC)
Fig. 24 - Typ. Capacitance vs. VCE Fig. 25 - Typical Gate Charge vs. VGE
VGE= 0V; f = 1MHz ICE = 75A
1

D = 0.50
Thermal Response ( Z thJC )

0.1
0.20
0.10 Ri (°C/W) i (sec)
0.05 R1 R2 R3 R4
R1 R2 R3 R4 0.0125052 0.000036
0.01 J C
0.02 J C
1 2 3 4
0.0722526 0.000151
0.01 1 2 3 4
0.1389474 0.005683
Ci= iRi
Ci= iRi
0.1056000 0.029339
0.001
SINGLE PULSE Notes:
( THERMAL RESPONSE ) 1. Duty Factor D = t1/t2
2. Peak Tj = P dm x Zthjc + Tc
0.0001
1E-006 1E-005 0.0001 0.001 0.01 0.1 1
t1 , Rectangular Pulse Duration (sec)

Fig. 26 - Maximum Transient Thermal Impedance, Junction-to-Case (IGBT)

10

1
Thermal Response ( Z thJC )

D = 0.50
0.20
0.1 0.10 Ri (°C/W) i (sec)
0.05 R1 R2 R3 R4
R1 R2 R3 R4 0.0131492 0.000022
0.02 J
J
C
C
0.01 1 2 3 4
0.3667154 0.000779
0.01 1 2 3 4
0.3959357 0.009640
Ci= iRi
Ci= iRi
0.3228848 0.079874
0.001 Notes:
SINGLE PULSE
1. Duty Factor D = t1/t2
( THERMAL RESPONSE )
2. Peak Tj = P dm x Zthjc + Tc
0.0001
1E-006 1E-005 0.0001 0.001 0.01 0.1 1
t1 , Rectangular Pulse Duration (sec)

Fig. 27 - Maximum Transient Thermal Impedance, Junction-to-Case (DIODE)

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IRGP4790DPbF/IRGP4790D-EPbF

L
80 V +
DUT VCC
0 - DUT VCC
1K
Rg

Fig.C.T.1 - Gate Charge Circuit (turn-off) Fig.C.T.2 - RBSOA Circuit

diode clamp /
DUT

4X L

DC VCC
-5V
DUT DUT / VCC
DRIVER
Rg

RSH

Fig.C.T.3 - S.C. SOA Circuit Fig.C.T.4 - Switching Loss Circuit

C force
R= VCC
ICM

100K

D1 22K
C sense
VCC
DUT DUT
G force 0.0075µF
Rg

E sense

E force

Fig.C.T.5 - Resistive Load Circuit Fig.C.T.6 - BVCES Filter Circuit

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IRGP4790DPbF/IRGP4790D-EPbF

600 120 600 120

tf tr
TEST
500 100 500 CURRENT 100

400 80 400 80
90% ICE
300 60 300 60
VCE (V)

VCE (V)
ICE (A)

ICE (A)
90% ICE
200 40 200 40
10% VCE

100 20 100 20
10% ICE 10% ICE 10% VCE

0 0 0 0

Eoff Loss Eon Loss

-100 -20 -100 -20
-0.5 0 0.5 1 -0.5 0 0.5
time(µs) time (µs)

Fig. WF1 - Typ. Turn-off Loss Waveform Fig. WF2 - Typ. Turn-on Loss Waveform
@ TJ = 175°C using Fig. CT.4 @ TJ = 175°C using Fig. CT.4

100 600 600

QRR
80 500 500
tRR VCE
60 400 400

40 300 300
IF (A)

Ice (A)
Vce (V)

ICE
20 200 200

0 100 100
Peak
IRR
-20 0 0

-40 -100 -100

-0.5 0.0 0.5 1.0 -5 0 5 10
time (µs) time (µs)

Fig. WF3 - Typ. Diode Recovery Waveform Fig. WF4 - Typ. S.C. Waveform
@ TJ = 175°C using Fig. CT.4 @ TJ = 150°C using Fig. CT.3

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IRGP4790DPbF/IRGP4790D-EPbF
TO-247AC Package Outline
Dimensions are shown in millimeters (inches)

TO-247AC Part Marking Information

Notes: This part marking information applies to devices produced after 02/26/2001

EXAMPLE: THIS IS AN IRFPE30

WITH ASSEMBLY PART NUMBER
LOT CODE 5657 INTERNATIONAL
ASSEMBLED ON WW 35, 2001 RECTIFIER IRFPE30

IN THE ASSEMBLY LINE "H" LOGO 135H

56 57
DATE CODE
ASSEMBLY YEAR 1 = 2001
Note: "P" in assembly line position
indicates "Lead-Free" LOT CODE WEEK 35
LINE H

TO-247AC package is not recommended for Surface Mount Application.

Note: For the most current drawing please refer to IR website at http://www.irf.com/package/

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IRGP4790DPbF/IRGP4790D-EPbF
TO-247AD Package Outline (Dimensions are shown in millimeters (inches))

TO-247AD Part Marking Information

E X A M P L E : T H IS IS A N IR G P 3 0 B 1 2 0 K D - E
W IT H A S S E M B L Y PART N U M BER
LO T C O D E 5657 IN T E R N A T IO N A L
ASSEM B LED O N W W 35, 2000 R E C T IF IE R
IN T H E A S S E M B L Y L IN E "H " LO G O 035H
56 57
D A TE C O D E
ASSEM B LY YE A R 0 = 2 0 0 0
N o te : "P " in a s s e m b ly lin e p o s itio n
in d ic a te s "L e a d - F re e " LO T C O D E W EEK 35
L IN E H

TO-247AD package is not recommended for Surface Mount Application.

Note: For the most current drawing please refer to IR website at http://www.irf.com/package/

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IRGP4790DPbF/IRGP4790D-EPbF

Qualification Information†
Qualification Level Industrial
(per JEDEC JESD47F)††
Moisture Sensitivity Level TO-247AC N/A
TO-247AD N/A
RoHS Compliant Yes

† Qualification standards can be found at International Rectifier’s web site: http://www.irf.com/product-info/reliability/

†† Applicable version of JEDEC standard at the time of product release.

Revision History
Date Comments
 Updated Temperature Coeff. of Breakdown Voltage from “0.11V/C” to “0.65 V/C” on page 2 .
8/21/2014  
Updated IC vs. TC graph Fig.2 to match page1 spec data on page 3.
Added IFM Diode Maximum Forward Current = 300A with the note  on page 1.
11/12/2014 Removed note from switching losses test condition on page 2.
Removed note from switching losses test condition on page 2.

IR WORLD HEADQUARTERS: 101 N. Sepulveda Blvd., El Segundo, California 90245, USA

To contact International Rectifier, please visit http://www.irf.com/whoto-call/

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