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MMBTA44-G: General Purpose Transistor

This document provides specifications for the MMBTA44-G general purpose NPN transistor. It is housed in a small SOT-23 surface mount package and can withstand high collector-emitter voltages up to 400V. The transistor has a maximum current rating of 200mA continuous and 300mA pulsed. Electrical characteristics include a DC current gain ranging from 40 to 200 and a collector-emitter saturation voltage below 0.75V.

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0% found this document useful (0 votes)
46 views6 pages

MMBTA44-G: General Purpose Transistor

This document provides specifications for the MMBTA44-G general purpose NPN transistor. It is housed in a small SOT-23 surface mount package and can withstand high collector-emitter voltages up to 400V. The transistor has a maximum current rating of 200mA continuous and 300mA pulsed. Electrical characteristics include a DC current gain ranging from 40 to 200 and a collector-emitter saturation voltage below 0.75V.

Uploaded by

wds657
Copyright
© © All Rights Reserved
We take content rights seriously. If you suspect this is your content, claim it here.
Available Formats
Download as PDF, TXT or read online on Scribd
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General Purpose Transistor

MMBTA44-G (NPN)
RoHS Device

Features
- High Collector-emitter voltage. SOT-23
- Ultra small surface mount package.
1 : Base
2 : Emitter
3 : Collector
0.119(3.00)

Mechanical data 0.110(2.80)

3
- Case: SOT-23 Standard package, molded 0.056(1.40)
plastic. 0.047(1.20)

1 2
- Terminals: Solderable per MIL-STD-750, 0.079(2.00)
method 2026. 0.071(1.80)

- Mounting position: Any. 0.006(0.15)


0.003(0.08)

- Weight: 0.0078 grams(approx.). 0.041(1.05) 0.100(2.550)


0.035(0.90) 0.089(2.250)

0.004(0.10) max
Diagram: 0.020(0.50)
0.012(0.30)
0.020(0.50)
0.012(0.30)
Collector
3
Dimensions in inches and (millimeter)

1
Base

2
Emitter

Maximum Ratings (at T =25°C unless otherwise noted)


A

Parameter Symbol Value Unit

Collector-base voltage VCBO 400 V

Collector-emitter voltage VCEO 400 V

Emitter-base voltage VEBO 6 V

Collector current-continuous IC 200 mA

Collector current-pulsed ICM 300 mA

Collector power dissipation PC 350 mW

Thermal resistance from junction to ambient RΘJA 357 °C/W

Junction temperature range TJ 150 °C

Storage temperature range TSTG -55 to +150 °C

Company reserves the right to improve product design , functions and reliability without notice. REV:A

QW-BTR53 Page 1
Comchip Technology CO., LTD.
General Purpose Transistor
Electrical Characteristics (Ta=25°C, unless otherwise specified)
Parameter Conditions Symbol Min Max Unit
Collector-base breakdown voltage IC=100μA, IE=0 V(BR)CBO 400 V

Collector-emitter breakdown voltage IC=1mA, IB=0 V(BR)CEO* 400 V

Emitter-base breakdown voltage IE=10μA, IC=0 V(BR)EBO 6 V

Collector cut-off current VCB=400V, IE=0 ICBO 0.1 μA

Emitter cut-off current VEB=4V, IC=0 IEBO 0.1 μA

VCE=10V, IC=1mA hFE(1)* 40

VCE=10V, IC=10mA hFE(2)* 50 200


DC current gain
VCE=10V, IC=50mA hFE(3)* 45

VCE=10V, IC=100mA hFE(4)* 40

IC=1mA, IB=0.1mA VCE(sat)1* 0.4 V

Collector-emitter saturation voltage IC=10mA, IB=1mA VCE(sat)2* 0.5 V

IC=50mA, IB=5mA VCE(sat)3* 0.75 V

Base-emitter saturation voltage IC=10mA, IB=1mA VBE(sat)* 0.75 V

Collector output capacitance VCB=20V, IE=0, f=1MHZ Cob 7 pF

Emitter input capacitance VEB=0.5V, IC=0, f=1MHZ Cib 130 pF

*Pulse test: pulse width ≤300µs, duty cycle≤2.0%

Company reserves the right to improve product design , functions and reliability without notice. REV:A

QW-BTR53 Page 2
Comchip Technology CO., LTD.
General Purpose Transistor
RATING AND CHARACTERISTIC CURVES (MMBTA44-G)

Fig.1 - Static Characteristic Fig.2 - hFE— IC

16 1000
COMMON
-500uA
80uA EMITTER
VCE=10V
-450uA
14 Ta=25°C
72uA
Collector Current, Ic (mA)

12 Ta=100°C

DC Current Gain, hFE


64uA

56uA
10
48uA Ta= 25°C
8 100
40uA

6 32uA

4 24uA

16uA
2
IB=8uA

0 0
0 5 10 15 20 0.1 1 10 100

Collector-Emitter Voltage, VCE (V) Collector Current , Ic (mA)

Fig.3 - VBEsat — IC Fig.4 - VCEsat — IC


1.0 300
ß=10 ß=10
Collector-Emitter Saturation Voltage
BASE-Emitter Saturation Voltage

0.8

100 Ta=100°C
0.6

Ta= 25°C
0.4
VBEsat, (V)

VCEsat (mV)

0.2

0 10
0 1 10 100 1 10 100
Collector Current, Ic (mA) Collector Current , Ic (mA)

Fig. 5 - Cob/Cib — VCB/VEB Fig.6 - PC — Ta


500 400
f=1MHZ
Collector Power Dissipation, Pc (mW)

IE=0/IC=0
Ta=25°C 350
Cib
300
Capacitance, C ( pF)

100

250

200

Cob
10 150

100

50

0 0
0.1 1 10 20 0 25 50 75 100 125 150

Reverse Voltge , V ( V ) Ambient Temperature , Ta (°C)

Company reserves the right to improve product design , functions and reliability without notice. REV:A

QW-BTR53 Page 3
Comchip Technology CO., LTD.
General Purpose Transistor

Reel Taping Specification


P0 P1

d
E
F
XX
B

12
0
o

D2 D1 D

W1

SYMBOL A B C d D D1 D2
SOT-23 (mm) 3.15 ± 0.10 2.77 ± 0.10 1.22 ± 0.10 1.50 ± 0.10 178.00 ± 2.00 54.40 ± 1.00 13.00 ± 1.00

(inch) 0.124 ± 0.004 0.109 ± 0.004 0.048 ± 0.004 0.059 ± 0.004 7.008 ± 0.079 2.142 ± 0.039 0.512 ± 0.039

SYMBOL E F P P0 P1 W W1
SOT-23 (mm) 1.75 ± 0.10 3.50 ± 0.10 4.00 ± 0.10 4.00 ± 0.10 2.00 ± 0.10 8.00 + 0.30 / - 0.10 12.30 ± 1.00

(inch) 0.069 ± 0.004 0.138 ± 0.004 0.157 ± 0.004 0.157 ± 0.004 0.079 ± 0.004 0.315 + 0.012 / - 0.004 0.484 ± 0.039

Company reserves the right to improve product design , functions and reliability without notice. REV:A

QW-BTR53 Page 4
Comchip Technology CO., LTD.
General Purpose Transistor

Marking Code
3
Part Number Marking Code

MMBTA44-G 3D
3D
1 2

Suggested PAD Layout

SOT-23
A
SIZE
(mm) (inch)
B
A 0.60 0.024

B 0.80 0.031 D E

C 1.90 0.075

D 2.02 0.080

E 2.82 0.111 C

Standard Packaging
Qty Per Reel Reel Size
Case Type
(Pcs) (inch)

SOT-23 3,000 7

Company reserves the right to improve product design , functions and reliability without notice. REV:A

QW-BTR53 Page 5
Comchip Technology CO., LTD.
Mouser Electronics

Authorized Distributor

Click to View Pricing, Inventory, Delivery & Lifecycle Information:

Comchip Technology:
MMBTA44-G

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