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Analog Electronics I: Dr. Abusabah I. A. Ahmed

This document outlines the course Ele 225 Analog Electronics I. It includes the course outline, textbook, evaluation criteria, contact information for the instructor, and an outline for the first lecture. The course covers topics such as semiconductors, P-N junctions, diodes, BJT transistors, amplifiers, and bias circuits. It will be evaluated through homework, labs, exams, and a final exam. Students are instructed to contact the instructor via email or phone with any questions.

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Rachul heenim
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56 views29 pages

Analog Electronics I: Dr. Abusabah I. A. Ahmed

This document outlines the course Ele 225 Analog Electronics I. It includes the course outline, textbook, evaluation criteria, contact information for the instructor, and an outline for the first lecture. The course covers topics such as semiconductors, P-N junctions, diodes, BJT transistors, amplifiers, and bias circuits. It will be evaluated through homework, labs, exams, and a final exam. Students are instructed to contact the instructor via email or phone with any questions.

Uploaded by

Rachul heenim
Copyright
© © All Rights Reserved
We take content rights seriously. If you suspect this is your content, claim it here.
Available Formats
Download as PDF, TXT or read online on Scribd
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Ele 225

Analog Electronics I
Dr. Abusabah I. A. Ahmed

[email protected]

1
Course Outline
 Introduction to Semiconductors.
 P-N Junction: Forward bias, Reverse Bias, I-V
characteristics.
 Diodes: Applications, Switches, Rectifiers, Clippers.
 BJT Transistors: N-P-N, P-N-P.
 Amplifiers: Common Base, Common Emitter and
Common Collector.
 BJT Transistor I-V Characteristics.
 Frequency Response of Common Emitter Amplifier.
 Bias Circuits Design and Analysis .

2
Text Book

Michael Tooley BA, Electronic Circuits ,


Fundamental and Applications(2nd
Edition), NEWNES, Oxford, 2002.

3
Course Evaluation
56 hours, 3 credits

 Home works: 5%
 Class works &Lab: 25%

 Mid-term Exam: 10%


 Final exam: 60%

4
Contact Information

Dr. Abusabah I.A. Ahmed


Email:[email protected]
Tel: 0123730107

5
Analog Electronics I

Lecture 1

Introduction

6
Lecture Outline
 Introduction to Semiconductors.
 Range of Conduciveness.
 Insulators.
 Semiconductors.
 P-N Junction.
 Forward Biasing.
 Reverse Biasing.
 Diode.

7
Introduction
 Semiconductors are those materials whose conductivity
lies in between the conductivity of conductors and
insulators.
 At 0K, semiconductors behave like a insulators.
 At room temperature the resistivity of semiconducting
materials lies in the range of 10−3 to 10−8 Ω 𝑐𝑚.
 The three most important semiconductors used in the
construction of electronic devices are Silicon (Si),
Germanium (Ge) and Gallium Arsenide (GaAs).

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Range of Conduciveness

The semiconductors fall somewhere midway between


conductors and insulators.
Range of Conduciveness

Semiconductors have special electronic properties which allow


them to be insulating or conducting depending on their
composition.
Scientific Principle of Conduction
Valence Band

The highest occupied energy band is called the valence band.

Most electrons remain bound to the atoms in this band.


Conduction Band

The conduction band is the band of orbitals that are high in


energy and are generally empty.

It is the band that accepts the electrons from the valence


band.
Energy Gap

The jump required for electrons from the Valence Band to


enter the Conduction Band.
Insulators

In insulators, the
valence band is full.

Also in insulators, the


energy gap is relatively
large.
Semiconductors
In semiconductors, the
valence band is full but the
energy gap is intermediate.

Only a small leap (jump) is


required for an electron to
enter the Conduction Band.
P-N Junction

We create a p-n junction by joining together two pieces of


semiconductor, one doped n-type, the other p-type.
P-N Junction

In the n-type region there are extra electrons and in the p-type
region, there are holes from the acceptor impurities .
P-N Junction
In the p-type region there are holes from the acceptor
impurities and in the n-type region there are extra electrons.
P-N Junction
When a p-n junction is formed, some of
the electrons from the n-region which
have reached the conduction band are free
to diffuse across the junction and combine
with holes.
Filling a hole makes a negative ion
and leaves behind a positive ion on
the n-side.

A space charge builds up, creating a depletion region.


P-N Junction

This causes a depletion zone to form around the junction (the


join) between the two materials.
This zone controls the behavior of the diode.
Forward Biasing

Forward biasing the p-n junction drives holes to the junction


from the p-type material and electrons to the junction from the
n-type material.
Forward Biasing

At the junction the electrons and holes combine so that a


continuous current can be maintained.
Reverse Biasing

The application of a reverse voltage to the p-n junction will


cause a transient current to flow as both electrons and holes
are pulled away from the junction.
Reverse Biasing

When the potential formed by the widened depletion layer


equals the applied voltage, the current will cease except for the
small thermal current.
Diode
A diode is the simplest possible
semiconductor device.

When forward-biased, there is a


small amount of voltage necessary
to get the diode going. In silicon,
this voltage is about 0.7 volts.
Diode Characteristic
When reverse-biased, an ideal
diode would block all current. A
real diode lets perhaps 10 micro
Amps through -- not a lot, but still
not perfect.

Usually, the breakdown


voltage is a lot more voltage
than the circuit will ever see,
so it is irrelevant.
Important terms sued for a p-n junction diode
 Breakdown Voltage: It is the minimum voltage at which p-n
junction breaks down with sudden rise in reverse current.
 Knee Voltage: It is the forward voltage at which the current
through the junction starts to increase rapidly.
 Maximum forward Current: It is the highest instantaneous
forward current that a p-n junction can conduct without damage to
the junction .
 Peak Inverse voltage (PIV): It is the maximum reverse voltage
that can be applied to the p-n junction without damage to the
junction .
 Maximum power rating: It is the maximum power that can be
dissipated at the junction without damaging it.

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