ME 462: Introduction To MEMS: Spring 2022
ME 462: Introduction To MEMS: Spring 2022
Spring 2022
Lecture 1
Nezih Topaloglu
Background
Pre-requisites:
Background in classical physics, mechanics of
materials, electrical circuits
Knowledge of Calculus and ODE
Design, modeling and fabrication of MEMS
will be covered
Some programs that may be used in the
project and assignments are MATLAB, ANSYS
and/or some MEMS layout design software
Course Outline
An overview of microfabrication methods:
Thin-film deposition
Lithography
Etching
Bulk and surface micromachining.
MEMS Foundry processes.
Review of basic MEMS governing equations in
mechanical, electrical and thermal domain.
Design, analysis and characterization of basic
MEMS devices.
Goals
On successful completion of this course,
students will be able to:
Understand the basics of MEMS
Develop familiarity with common microfabrication
methods
Develop familiarity with the steps required for
design and analysis of a MEMS device
Read and understand emerging technical literature
about the subject.
Administrative Info
Textbook:
“Foundations of MEMS”, Chang Liu, Prentice Hall.
“Microsystem Design”, S. D. Senturia, Kluwer Academic Publishers,
2000
Course Website:
https://yulearn.yeditepe.edu.tr/course/view.php?id=13773
10 nm < L < 1 m
Nano electromechanical systems
(NEMS)
MEMS and IC technology
Integrated circuit (IC) technology (named CMOS) starts with the
building of first transistor, in 1949.
It is the key technology behind the microchips (microprocessors, DSP
chips, etc)
The objective of MEMS technology is to form small structures with
dimensions in the micrometer scale.
Significant parts of the MEMS technology have been adopted from IC
technology. For instance, almost all devices are built on wafers of
silicon, like ICs. The structures are realized in thin films of materials, like
ICs. They are patterned using photolithographic methods, like ICs.
There are however several processes that are not derived from IC
technology (we will cover those later).
Integrated Circuit (IC) Fabrication
1949 – Shockley’s published classic
paper on p-n junctions and bipolar
transistors
The first transistor by
William Shockley (Bell 1958 – First IC containing two
Labs, 1947) transistors mounted on a bar of
Germanium
1959 – R. Noyce proposed first
monolithic IC. Aluminum contacts
were etched using lithography
1960 – J. Hoerni develops IC Planar
process. Oxide layer is formed on a
semiconductor surface.
1960 – First MOSFET reported by D.
Kahng and M. Atalla (combination of
The first IC: Two transistors Si and SiO2)
mounted on a bar of germanium
(Texas Instruments, 1958)
Moore’s Law
Moore's law
describes a long-term
trend in the history of
computing hardware,
in which the number of
transistors that can be
placed inexpensively
on an integrated circuit
has doubled
approximately every
two years
Feynman’s Famous Talk
Richard Feynmann, Caltech (Nobel Prize, Physics, 1965)
American Physical Society Meeting, December 29, 1959:
“What I want to talk about is the problem of manipulating and
controlling things on a small scale. …. In the year 2000, when they
look back at this age, they will wonder why it was not until the year
1960 that anybody began seriously to move in this direction.”
The DLP chip is made up of DMDs, where each DMD is around 10x10 μm2.
SRAM (Static random-addressing memory) circuits employing CMOS
technology for controlling each mirror are embedded on the Si substrate
beneath the layer of mirrors.
Capacitive accelerometer