ECEN 4827/ 5827: Analog IC Design
ECEN 4827/ 5827: Analog IC Design
Analog IC Design
Pressure
Position 0101010110100101010101010101010101010
0001011010010101011101101010110110101
1101010101010101010001010100101011010
Speed Power Digital
0110101010101010101000010101010111100
1010101010101010101010101010010010010
Flow Management Processor
1010101010101010101010101010010010101
0110101010101011110010110110101010101
0111110101010101010101010101011100100
1010101010101010010101010101010101010
Humidity
Sound
Light
PS PS PS PS
3.6 V 2.5 V 1.5 V 0.5-
Antenna
Vbat
Display
mP/DSP D/A PA
core LO
PS Audio
A/D LNA
2.7-5.5 V I/O
Baseband digital Analog/RF
Interface
2.5 V 2.5 V 2.5 V
PS PS PS
Vbat + C Vo
–
–
“Error amplifier” with
loop compensation
+
Bandgap
- Vref
reference
Vg + Vo
–
Bias current
IQ
–
I g Io IQ
Vo I o Vo I o
Efficiency: η
Vg I g Vg ( I o I Q )
Vo
Linear regulator efficiency cannot be greater than η
the ratio of the output and the input voltage Vg
ECEN4827/5827 Analog IC Design 9
Linear regu lator efficiency exam ple
100
90
80
Example:
70
Vg = 3.6 V
Efficiency [%]
60
Vo = 1.5 V
50
IQ = 50 mA
40
. 0 < Io < 300 mA
30
20
10
0
0.1 1 10 100 1000
Io [mA]
Ig L Io
1
+ +
2
Vg + vs(t) C v(t)
– Load
– –
90
80
Buck regulator
70
Example:
Vg = 3.6 V
Efficiency [%]
60
50
Vo = 1.5 V
Linear regulator 0 < Io < 300 mA
40
.
30
20
10
0
0.1 1 10 100 1000
Io [mA]
– – Feedback
connection
Gate
drivers
p n
Dead-time Compensator
Pulse-width vc v
Gc(s)
modulator
dTs Ts t t
Controller chip
VM vsaw(t)
Saw-tooth
p (t ) waveform vsaw (t ) vc(t)
+
Q R _
vc 0
t
S control
input p(t)
clock
OSC
0 dTs Ts 2Ts
clock
SW
S1
L1
g sw out
Vg 1µ
SW R1
C1 I1
1
PWL(0A 0 800u 0A 801u 1A)
3.3 100µ
S2
c inv
R3 C2 R4 C3
A1
R2
U1
ctrl
100k
t
re f
Bpwm
.lib opamp.sub
V=if(v(ctrl,t)+0.5,1,0) Vref
Vsaw
PWL(0 0 500u 1)
SW
S1
L1
g sw out
Vg 1µ
SW R1
C1 I1
1
PWL(0A 0 800u 0A 801u 1A)
3.3 100µ
S2
c inv
R3 C2 R4 C3
A1
R2
U1
ctrl
100k
t
re f
Bpwm
.lib opamp.sub
V=if(v(ctrl,t)+0.5,1,0) Vref
Vsaw
PWL(0 0 500u 1)
SW
S1
L1
g sw out
Vg 1µ
SW R1
C1 I1
1
PWL(0A 0 800u 0A 801u 1A)
3.3 100µ
S2
c inv
R3 C2 R4 C3
A1
R2
U1
ctrl
100k
t
re f
Bpwm
V=if(v(ctrl,t)+0.5,1,0)
.lib opamp.sub
Vref Op-amp
Vsaw
PWL(0 0 500u 1) application
PULSE({Vlow} {Vhigh} 0 {Tr} {Ts-Tr} 0 {Ts})
circuits and
.param Fs=1meg Tr={0.9/Fs} Ts={1/Fs} Vlow=1 Vhigh=2 transistor-level
.tran 0 1000u 0 2n
op-amp design
N2
o ut 0
N1
U1 U2
2
i np Ibi a s i np U9 L = 1U
Vp W = 50 U W = 50 U W = 20 0U
1u L = 1U L = 1U
i nm {Cc} Cc
N3 1
DC = 1 .65
L = 2U U3 U4 L = 2U U6 L = 2U PARAMETERS:
AC = 0 W = 10 U W = 10 U W = 10 0U Cc = 1 0 p
0
T RA N = P UL SE (1.6 1.7 1 0 0n 1n 1n 5 0 0n 1u )
0 Vz
1 Va c
Design:
• Circuit configuration
• DC biasing
• device W/L aspect ratios
SW
S1
L1
g sw out
Vg 1µ
SW R1
C1 I1
1
PWL(0A 0 800u 0A 801u 1A)
3.3 100µ
S2
c inv
R3 C2 R4 C3
A1
R2
U1
ctrl
100k
t
re f
Bpwm
.lib opamp.sub
V=if(v(ctrl,t)+0.5,1,0) Vref
Vsaw
PWL(0 0 500u 1)
V DD
DC = 3 .3V
V Ire f
DC = 0
U3 U1
0
W = 5U W = 5U
L = 5u L = 5u
ref
V RE F
0 0
U4 U9
RPN RPN
W = 1u W = 1u
PARAMETERS:
L = {LR1} L = {LR2}
L R2 = to b e d ete rmi ne d
L R1 = to b e d ete rmi ne d
U6 U5 U10
WDIODE WDIODE WDIODE
n= 1 n= 8 n= 1
0 0 0
SW
S1
L1
g sw out
Vg 1µ
SW R1
C1 I1
1
PWL(0A 0 800u 0A 801u 1A)
3.3 100µ
S2
c inv
R3 C2 R4 C3
A1
R2
U1
ctrl
100k
t
re f
Bpwm
.lib opamp.sub
V=if(v(ctrl,t)+0.5,1,0) Vref
Vsaw
PWL(0 0 500u 1)
SW
S1
L1
g sw out
Vg 1µ
SW R1
C1 I1
1
PWL(0A 0 800u 0A 801u 1A)
3.3 100µ
S2
c inv
R3 C2 R4 C3
A1
MOSFETs and U1
R2
ctrl
driver circuits t
100k
re f
Bpwm
.lib opamp.sub
V=if(v(ctrl,t)+0.5,1,0) Vref
Vsaw
PWL(0 0 500u 1)
SW
S1
L1
g sw out
Vg 1µ
SW R1
C1 I1
1
PWL(0A 0 800u 0A 801u 1A)
3.3 100µ
S2
c inv
R3 C2 R4 C3
A1
R2
U1
ctrl
100k
t
re f
Bpwm
.lib opamp.sub
V=if(v(ctrl,t)+0.5,1,0) Vref
Vsaw
PWL(0 0 500u 1) Feedback
PULSE({Vlow} {Vhigh} 0 {Tr} {Ts-Tr} 0 {Ts})
.param Fs=1meg Tr={0.9/Fs} Ts={1/Fs} Vlow=1 Vhigh=2
.tran 0 1000u 0 2n