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Optic Asignment

This document contains an optics and optical communications worksheet for students at Haramaya University in Ethiopia. It includes 21 questions covering topics like light emission processes, optical receiver operation, noise sources, photodiode types, detection principles, and laser characteristics. Students are assigned to work in groups to answer questions on topics such as receiver SNR derivation, photodiode comparisons, quantum efficiency calculations, laser efficiency, and coherent detection methods.

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bamlaku tekeba
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22 views

Optic Asignment

This document contains an optics and optical communications worksheet for students at Haramaya University in Ethiopia. It includes 21 questions covering topics like light emission processes, optical receiver operation, noise sources, photodiode types, detection principles, and laser characteristics. Students are assigned to work in groups to answer questions on topics such as receiver SNR derivation, photodiode comparisons, quantum efficiency calculations, laser efficiency, and coherent detection methods.

Uploaded by

bamlaku tekeba
Copyright
© © All Rights Reserved
Available Formats
Download as PDF, TXT or read online on Scribd
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HARAMAYA UNIVERSITY

HARAMAYA INSTITUTE OF TECHNOLOGY

School of Electrical and Computer Engineering

Optics and Optical Communications –Worksheet 2

1. Discuss the two processes by which light can be emitted from an atom.

2. Draw and describe the operation of optical receiver

3. Discuss the radiative and non-radiative recombination.

4. Explain the two fundamental noise source of optical receiver

5. Define the following terms

1. Inter Symbol Interference (ISI)


2. Quantum limit
3. BER
4. Noise-equivalent power (NEP)
5. external quantum efficiency
6. Eye diagram
7. Dark current and Dark current noise
(a) for optical receiver
(b) for optical transmitter

6. Drive the SNR equation for p-i-n receiver


(a) Thermal-noise limit
(b) Shot-noise limit

7. Outline the common LED structures for optical fiber communications, discussing their
relative merits and drawbacks. In particular, compare surface- and edge-emitting devices.

8. What is the main difference between p-i-n and APD receivers

9. Discuss the main difference between homodyne and hetrodyne detection

10. Compare and contrast the following photodiodes


(a) P-N photodiode
(b) P-i-N Photodiode
(c) APD Photodiode

11. Discuss the photodiode detection principle of operation.

12. Describe the relationship between rise time, response time and bandwidth
13. Define the following terms
(a) Rise time
(b) Long wavelength cutoff
(c) Impact ionization
14. Discuss the operation of a vertical cavity surface-emitting laser (VCSEL). Briefly indicate
the three methods to provide wavelength tuning for a VCSEL.
15. The total efficiency of an injection laser with a GaAs active region is 18%. The voltage
applied to the device is 2.5 V and the bandgap energy for GaAs is 1.43 eV. Calculate the
external power efficiency of the device.
16. A gallium arsenide injection laser with a cavity of length 500 m has a loss coefficient
of 20 cm1. The measured differential external quantum efficiency of the device is 45%.
Calculate the internal quantum efficiency of the laser. The refractive index of gallium
arsenide is 3.6.
17. A p-n photodiode has a quantum efficiency of 50% at a wavelength of 0.9 µm. Calculate:
(a) its responsivity at 0.9 µm;
(b) the received optical power if the mean photocurrent is 10−6 A;
(c) the corresponding number of received photons at this wavelength
18. Given that the following measurements were taken for an APD, calculate the multiplication
factor for the device.
Received optical power at 1.35 m = 0.2 µ W
Corresponding output photocurrent = 4.9 µ A
(after avalanche gain)
Quantum efficiency at 1.35 m = 40 %
19. Describe the basic detection process in a photoconductive detector. The maximum 3 dB
bandwidth allowed by an InGaAs photoconductive detector is 380 MHz when the electron
transit time through the device is 7.6 ps. Calculate the photocurrent obtained from the
device when 10 µW of optical power at a wavelength of 1.32 µm is incident upon it, and
the device quantum efficiency is 75%.
20. A silicon p-i-n photodiode incorporated into an optical receiver has a quantum efficiency
of 60% when operating at a wavelength of 0.9 m. The dark current in the device at this
operating point is 3 nA and the load resistance is 4 kΩ. The incident optical power at this
wavelength is 200 nW and the post-detection bandwidth of the receiver is 5 MHz. Compare
the shot noise generated in the photodiode with the thermal noise in the load resistor at a
temperature of 20 ◦ .
21. Discuss the difference of Homodyne and Hetrodyne coherent detection.

Assignment

Question number: 1,2,4,5,6,8, 9, 10, 11, 12,14, 16, 17,18, 19, 20


The assignment is carried out in a group of four student
Submission Date: 08/09/2021 till 4:00 PM

Page 2

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