base current U,).

and collector current (1) for different constant

EXPERIMENT 8
and reverse bias.
AIM: To draw the I-V characteristic curve
of a p-njunction in forward bias

APPARATUS
high resistance
diode, a 3 volt battery, a 50 volt battery, a

A p-n junction (semi-conductor)

0-100 mA ammeter, one
0-3 volt voltmeter, one 0-50 volt voltmeter, one
rheostat, one

connecting wires and pieces of sand paper.

0-100 uA ammeter, one way key,

THEORY
is connected to positive
Forward-bias characteristics. When the p-section of the diode
to negative terminal of
the battery then junction is
terminal of a battery and n-section is connected
in the
the forward current increases slowly
said to be forward biased. With increase in bias voltage,
increases suddenly
diode (0.2 V for Ge), the current
beginning and then rapidly. At about 0.7 V for Si cut in voltage
current increases rapidly, is called
The value of forward bias voltage, at which the forward
or threshold voltage.
Reverse-bias characteristics. When thep-section of the diode is connected to negative terminal
terminal of the same battery
of high voltage battery and n-section of the diode is connected to positive
then junction is said to be reverse biased.
When reverse bias voltage increases, initially there is a very small reverse current flow, which
remains almost constant with bias. But when reverse bias voltage increases to sufficiently high value
the reverse current suddenly increases to a large value. This voltage at which breakdown of junction
diode occurs (suddenly large current flow) is called zener breakdown voltage or inverse voltage. he
breakdown voltage may starts from one volt to several hundred volts, depending upon dopant density
and the depletion layer.
ybdtor, tor Dioues uilu

SStorss

ARAN 185

Potential n
Divider

3V

K
Fig. p-n junction
diode-forward biased.
n
Potential
Divider

50V

K
Fig. p-n junction diode-reverse biased.
PROCEDURE

For forward-bias

1. Make circuit diagram as shown in diagram.

clean and tight.
2. Make all connections neat, (mA).
zero error of voltmeter
(V) and milli-ammeter
3. Note least count and end and insert the key
(rheostat) near negative
contact of potential divider
4 Bring moving and milli-ammeter (mA)
will give zero reading
K. Voltmeter (V) forward-bias voltage (V) of
end to apply a
contact a little towards positive
Move the
zero. Current remains
zero. (It is due
0.1 V. Current remains 0.3 Vfor Ge diode.
voltage upto
ncrease the forward-bias
barrier of 0.3 V).
to junction potential
current.
records a
small
Milli-ammeter Current increases first
current.
7 increase , to 0.4 V. corresponding
note the
of 0.2 V and
8 ncrease V, in steps
till V,
becomes
0.7 v.
represents"torward
b r e a k d o w n " stage.

then rapidly, Ihis

oes not
not change
Slowly and increases
suddenly.
forward
current
does change

V.Thecurrent
the
. Make,=0.72
breakdown'" stage,
"forward
10. Ifthe V,i
increases
beyond
the out the key
at once
much. Now take ahead.
as given
11. Record your observations
186 Comprehenaoe Practical Physics
For reverse-bias
12. Make circuit diagram as shown in diagram.
13. Make all connections neat, dean and tight.
14. Note least count and zero error of voltmeter (V) and micro-ammeter (uA).
positive end and insers
moving contact of potential divider (rheostat)
near
Bring
K. Voltmeter (V) and micro-ammeter (uLA) will give zero reading.
sert the ke
16. Move the contact towards negative end to apply a reverse-bias voltage (V) of 0.5 Vas
,a feebly
reverse current starts fowing
17. Increase V, in steps of 0.2 V. Current increases first slowly and then rapidly till V.hee
20 V. Note the
current
18. Make V, = 25 V. The current increases suddenly. This represents "reverse breakdn
own"
stage. Note the current and take out the key at once.
19. Record your observations as given ahead.
OBSERVATIONS
For forward-bias
Range of voltmeter . V

Least count of voltmeter V

Zero error of voltmeter V

Range of milli-ammeter mA

Least count of milli-ammeter ***** mA

Zero error of milli-ammeter mA
1. Table for forward-bias voltage and forward current
Serial No. of Obs. Porward-bias Voltage Vv, (V) Forward current I, (m4)
(1)
(2) (3)
1.
0
2. 0.1
3. 0.2
0.3 0
5.
0.4 0.5
6.
0.6
7. 0.8 2
8.
1.0
3
9.
1.2
5
10.
1.4
7.5
11.
1.6
10
12.
1.8 15
13.
2.0
20
14.
2.2 25
15 2.4 30
 forreverse-bias
as

Rangeo fv o l t m e t e r

V
c o u n t o f voltmeter
V

ero
error
ofvoltmeter V
nange o f m i c r o - a m m e t e r

LA
offm
o micro-ammeter
icro

Least
c o u n t

A
micro-ammeter
of
error
Zero
2. Table
Sor reverse-bias voltage and reverse current

Serial No. ofObs. Reverse-bias Voltage v, (V) Reverse curent 1, (LA)

(1) (2) 3)

1 0

2 5.0

3. 7.0

4. 9.0

11.0
5.
13.0 5
6.

15.0
7.
9
17.0
8.
11
19.0
9.
13
21.0
10.
15
23.0
11 25
25.0
12.

(Note.The readingsa given as a sample.)

CALCULATIONS
and forward
current
I, (column 3)
For forward-bias (column 2)
forward-bias
voltage V,
Plot a graph between
Y-axis.
ang V,along X-axis and 1, along
 188
Comprehensiue Practical Physics-X
nis
graph is called forward-bias characteristic curve of a junctiondiode.
FORWARD-BIAS CHARACTERISTIC CURVE OF A JUNCTION DIOne
Scale
Y X-axis 1 cm = 0.2 V of V
Y-axis: 1 cm = 5 mA of le
50

45

40

35

30
B
25

20

15

10

5
0.3
O 0.2 0.4 0.8 1.2 1.6 2.0 2.2 24 X
Forward bias voltage
(V) in V
Fig. Characteristic curve of a
junction diode (forward-bias).
From graph, for
change from point A to B,
AV= (2.4-2.0)V 0.4V, AI, (30 =

Hence junction resistance for -20)mA =10 mA=

forward-bias,
AVE 0.4 V
10 mA
40 ohms.
ohms.
al
For reverse-bias
Plot a
graph between reverse-bias
taking V, along X-axis and I, along Y-axis. voltage V, (column 2) and reverse current (column 3
i, co
 and Transistors 189
ndctor
Diodes
Don

tor

is called reverse-bias characteristic curve of a junction diode.

T h ig
s raph

aEVERSE-BIAS CHARACTERISTIC CURVE OF AJUNCTION DIODE

Scale
X-axis: 1 cm
= 5.0 V of V
Y'-axis:1 cm =5u A of

Reverse-blas voltage, (V) in V

X -25 -20 -15 -10-7-5

(15,-7)
-10
(-23,-15)

-20

25
(-25,-25)
Y

curve of a junction diode (reverse-bias).

Fig. Characteristic

From graph, for change

from point A to B,
2V, AIL (2-1) HA = pA
1
AV (7.0-5.0)V
=
= =

for reverse-bias,
Hence junction resistance
2V
r
AVg = 2x 10 ohms.
AlR 1A
RESULT
forward-bias = 40 ohms
Junction resistance for
2 x 10° ohms.
for reverse-bias
=

Junction resistance

PRECAUTIONS
should be neat,
clean and tight.
All connections
when the circuit is
not being used.
and opened
be used in circuit
e y should breakdown
should not be applied.
F o r w a r d - b i a s voltage
beyond
should not be applied.
breakdown
Keverse-bias voltage beyond

SOURCES OF ERROR
faulty.
may be
1.
junction diode supplied
he of the
student.
carelessness
2.
may be due
Erro to
connected properly.
not be
Tn e terminals of battery may