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Experiment 2.4 Four Probe

This experiment aims to determine the resistivity of semiconductors using the four probe method. A constant current is passed through two probes of a semiconductor sample and the potential difference across the inner two probes is measured. The resistivity is calculated using equations that relate the measured voltage, current, probe spacing and sample thickness. The experiment is performed at different temperatures and the results show that resistivity decreases exponentially with increasing temperature.

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Anurag Gupta
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89 views

Experiment 2.4 Four Probe

This experiment aims to determine the resistivity of semiconductors using the four probe method. A constant current is passed through two probes of a semiconductor sample and the potential difference across the inner two probes is measured. The resistivity is calculated using equations that relate the measured voltage, current, probe spacing and sample thickness. The experiment is performed at different temperatures and the results show that resistivity decreases exponentially with increasing temperature.

Uploaded by

Anurag Gupta
Copyright
© © All Rights Reserved
We take content rights seriously. If you suspect this is your content, claim it here.
Available Formats
Download as PDF, TXT or read online on Scribd
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Experiment No. 2.

Aim: - To determine the resistivity of semiconductors by four probe Method.


.

List of Equipment Used:


Table 1: List of Equipments

S.N. Equipment Range Quantity

1. Power supply 220V 1

2. Oven 0-200°C 1

3. n-Type crystal NA 1

4 milliAmmeter & milliVoltmeter 0-20mA &0-250mV 1

Introduction/Theory: In its useful form, the four probes are collinear. The error due to contact
resistance, which is especially serious in the electrical measurement on semiconductors, is avoided
by the use of two extra contacts (probes) between the current contacts. In this arrangement the
contact resistance may all be high compare to the sample resistance, but as long as the resistance
of the sample and contact resistances are small compared with the effective resistance of the
voltage measuring device (potentiometer, electrometer or electronic voltmeter), the measured
value will remain unaffected. Because of pressure contacts, the arrangement is also especially
useful for quick measurement on different samples or sampling different parts of the same sample.
Four probe apparatus is one of the standards and most widely used apparatus for the measurement
of band gap of semiconductors. This method is employed when the sample is in the form of a thin
wafer, such as a thin semiconductor material deposited on a substrate. The sample is millimetre in
size and having a thickness w. It consists of four probes arranged linearly in a straight line at equal
distance S from each other. A constant current is passed through the two probes and the potential
drop V across the middle two probes is measured. An oven is provided with a heater to heat the
sample so that behavior of the sample is studied with increase in temperature.
Diagram:

The figure shows the arrangements of four probes that measure voltage (V) and supply current
(A) to the surface of the crystal.

At a constant temperature, the resistance, R of a conductor is proportional to its length L and


inversely proportional to its area of cross section A.

- (1)
Where ρ is the resistivity of the conductor and its unit is ohmmeter.
We assume that the size of the metal tip is infinitesimal and sample thickness is greater than the
distance between the probes,

- (2)

Where V - the potential difference between inner probes in volts.


I - Current through the outer pair of probes.
S - Spacing between the probes in meter.
Procedure:
1. Select the semiconductor material from the combo box.
2. Select the source current from the slider. Restrict the slider based on the range of current.
3. Select the Range of oven from the combo box.
4. Set the temperature from the slider.
5. Click on the Run Button to start heating the oven in a particular interval, from the default 250C
to the temperature that we set already Click on the Wait button to stop heating.
6. Click on the Set button to display the temperature that we set in the oven.
7. Click on the Measure button to display the present temperature in the oven.
8. Select the range of voltmeter from the combo box.
9. Measure the Voltage using Voltmeter.
10. Calculate the Resistivity of semiconductor in ohm-cm for the given temperature using
equations.

Observations & Calculations:

(i) Distance between probes (s) = 0.2cm

(ii) Thickness of the crystal chip (W) = 0.05cm

(iii) Current (I) = .......... 3mA (constant)

From standard table f (w/S) = 5.89

Table 2:

S. No. Temp. in ˚C Temp. Voltage ρ(ohm cm)


Kelvin (V)in volts

1. 25 298 87.24 6.2011

2.

3.
Result(s): Resistivity of semiconductor =.................. ohm-cm.

Conclusion: The resistivity decreases exponentially with the increase in T. That is as at low
temperatures resistivity is more and at high temperatures the resistivity is less.

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