4.

2 CURRENT VOLTAGE CHARACTERISTICS 373

To prevent the accumulation of static charge on the gate capacitor of a MOSFET, gate-
of MOS integrated circuits.
protection devices are usually included at the input terminals
The protection mechanism invariably makes use of elamping diodes.

4.2.9 Summary
For easy reference we present in Table 4.3 a summary of the current-voltage relationships
for enhancement-type MOSFETs.

TABLE 4.3 Summary of the MOSFET Current-Voltage Characteristics

NMOS Transistor

Symbol:
D D

GO -OB GO

S U's 0

Overdrive voltage:
VovVos-V,

Vcs=V,+ Uov
Operation in the triode region:

Conditions:
(1) Ugs2V, e Vov20
(2) VGD2 V, e vps VGs- V, e UDs S Vov

i-v Characteristics:
W
ip 4,Cox(OGs-V)Ups-5s
For vps <
2(VGs- V,) Ups20ov

ros-1/u.Cfvas-V
Tpsin
Operation in the saturation region:
Conditions:
(1) Ves2V, Vov~20
(2) VGDS V, e Ups2 UGs - V, Ups2 Vov

i-v Characteristics:
ip54,C7(os-V,)(1+A0ps) (Continued)
374
CHAPTER 4 MOS FIELD-EFFECT TRANSISTORS (MOSFETS)

TABLE 4.3 (Continued)

Large-signal equivalent circuit model:

iG0 D

Go-
+

VGS Ups

where

5u,C.Vas-V,* L

Threshold voltage:
V, = Vro+ M,/29+|s/20)

Process parameters:

CoxEoxtox F/m)
k = 4,Co (A/V)
V = (Va/L) (V/m)
= (1/V) (V
7 24NAE/Co (V
Constants:
8.854 x 10-2 F/m
E3.9 =3.45 x 10F/m
E=11.7 = 1.04 x 10- F/m
q= 1.602 x 1071 c

PMOS Transistor
Symbol:

Go -OB

D D
UsB0
Overdrive voltage:
Vov Vos-V,
Usa |V+|Vov (Contnei
 4.3 MOSFET CIRCuITS AToc 375

TABLE4.3 (Continued)
i - Characteristics:

as for NMOS transistors except:

Same relationships
Replace K, and N with 4, k,, and Np, respectively.
4, and yare negative.
V.Vo Va
Conditions for operation in the triode region:

+
Dov S0 DsG2 |V
(1) Vos S V,
Vas-V, VspS |od
(2) UpG2|VA eUps
in the saturation region:
Conditions for operation
e UovS0 DsG2V
(1) VGs S V
UpsS Vas- V, DsD2 |Vo
(2) pGS|V
equivalent circuit model:
Large-signal

vsD

tIsG oD

ip
GO
i0

where

C I R C U I T S ATDC now
consider
circuits

series
in
of
we
MOSFET a
MOSFETs, present
4.3 c h a r a c t e r i s t i c s of we
shall
instill in the
Specifically,

objective
is to
both
analysis
c u r r e n t - v o l t a g e c o n c e r n .

of The
at de.
circuit
studied
the c u r r e n t s
are
circuits M O S F E T

Having and M O S F E T

voltages perform the

of
only dc
to on
ability attention

and the
examples
which analysis device thus
focus modulation;

and the and

esign with simple
channel-length
overdrive

ofthePMOS, V
familiarity m a t t e r s

a neglect
dder
rapidly and effectively. to keep generally
work
in
terms

examples,
we
will
c o n v e n i e n t
to while, for
positive |V+|Vod.
following operation,

find it
are =

n the circuit Vov

will and =|Vosl
MOSFET
0. We V, w r i t e ka

ence of a s s u m e
=

that
for
NMOS,

prefer
to

readermay
will Recall
We
1s, Vas-V, the
Vov= PMOS
For
g
and
o r
are
negative.
 CHOS Tnverler

Vdd
Tp
load)
a
G pmos
(acts as

Vo
.

as a
dikr
Ym0S (acts

Ymos has P-type substrate

Pmos as -tpe substate
In MoS
Inverter pmos, nmos a J
in series.

SV
5V
Vtn
Vout
OV
Ov

MOSFET depletim type

enhancement type
In CMOS Inverte both pmos YmoS
are d enhancevment type
Nmos

anster characteri stics

no dhamel
Vas
fomatiom
Vatua
chanmel
Vas<Vcut
Vas7Tn O lneaY
saturotion
) Ootput characteritics

Es(edg oaturati
Reneor Saturotion

oV
SVos
=oVeYdstve
voltag
VasVrrn Vps 4 Vas-V, o) Vos < Vov near
Vasr VpsVqs-Ve satuvatiom
 when yoUY Nmos is in lineav reqion, it
will act as a esistoy.
it
when yo0 Nmos is in saturation egiom,
acts as an ampifier.

Atneax
I nCoxWT ((ks-Vr)is-s
Small oalu d Vos, we com
heglect VoS Kn MOSPET
tanscondoctaue

paramete

TAnCoz Vas-Vn) Vos

Kn- AnCo
u n Cox V4s -Vrn) =Pocecs

VoS aanet

Channel yesistance oed

lnca
MoSFET in
y
ARqiaml

ds= RON
MnCor Vs-Vn)

tor SmallyoU Can epAace the MOSFETby

Values d Vos Te SiS tance whe the MoSFE T
AincaY
CS Opevating in
Tegien
S a t u v a t i o r

Ip- n Cox
Vas-Vn
that MoSFET behaves
T Aenear Tegien We saw
value is
as aXinear Tesistane wh oSe
Yds
ds
Controlled y atevoltaga s

when operattd in saturation region the Mas fET

CUToert sourCe
actsas a vo ltage-Controlled
ie.,chánges in the

gate to Sovrce voltag trn

cn
rie to changes
as givc current tp
the drain

echnigpe
t reas amplihication u
we i) tili
undamitally nem-lineas dewice
oMOSFET
to operate a
that d de blartng Coneponeing 6
amol a
a certain appopriale Vas to
the voltage signal
AUperimposing
amd then de bias voltage Vas
0m the
be amplified, Vgs,
he vesulti
resutirg
the Signal gs Small
Sy kecping c a n be
Ca made nearly
made nearly
chang in
drain cu emt, td,
change
Proportional to Ugs

p-S(Vas)
 Tpti=
S(Vas) + gs p
Tt Vs \Vps-x
Ip t
grn
m
gngsVgs
Athea ampiRcalon

i fVs Bgs) f (Ves AM

+ =

=
Vas) + Vas

meqlectedd

d-9mgs
Tf you comSider
then
CLM
CLM
we get
Telati on 2
d- 9m gs
+ Vas
ds

there is chammel lengn modulation

T mo

Ehen o = co.
achve lo synchvonous reset (vtstng edge D FE)

module dff( tnput clk, nput d, tnput vst

output veg
aluways @ posedae dk)
begtn
f(rst= =o)
=0 a
else clk

endmodole YSt

acttve htah symchonous Yeset (istng edge DFF)

module dPP
(tnput clk,tnput d, tnput rst, output
alwaus (posed.ge ck)
begtn
f (reset== r'bi)
D
else
clk
d;
end
endmodule YSt

PISO, PIPO, Covmersl

S1S0, SI PO,
Codes), FSM
actt ve lew asunconous Yeset (vestng edge D FF)

always posedqe ck or neqedge Teset)

module. dFe (Enput d, enpot vst, tnput dlk,

output eg
aluayse lposedge clk or
negedge Yst)
f (rst== 4'bo)
or < = ibo;
else
= d cK

end
endmodwle
Yst

activehtg asynch vonous reset (vtsig edge o FF)

module dff tnput clk, tnput d, tnput rst, output )
alaays (posedge clk ov
posedge vst)
begtn
ef (yeset i'bi)
= =

9,<= 'bo;
else
=d CIk

end
end module
Tst
 dill b GombenaEonal
amd Seq,uontal cicul P

Cmtnalienal ce
t h e olp vonialAs are dapendert
only on the mbinaion d
tnput vatables
The is no stovag
tnvolved with them.

Conns Yo
logtc m-ol
Vabcales
Crct
ym Vaniabts

Y-(X)
seaveritEal cesutt
hoe he olp vanioblus not omy,
dapend b the peknt Cnput
vanialoles ut alo
 channel
(YLo Pre -eniskg
M-channel
enhantement tupe MOsFET
D
Momally obt debtca

s <V cu-cl
G
D

i n e a
G
VGsV ON saliaEom
i n e a (ticda)

VasV amd Vs< Vas-

Threshold
TttaK Saturalon VoV-V)
sV and Vs Ves-V
(VV-
n
Ts An Cz (as-V)s- Ya) tve
Gs+e
saurakon
Voc-+e
2

Coo
Kn = n
Kn An Cou W Process paIamaiv/
transconductom
paanamelu.
hancenment moSFETS au wcd in dtattal
O de sign
 Tg-0 alucays) = Is (aloa.ys)
= aSpect
tSto allo

Amob.lty d elcbons
Co= OMid Capacitamce pe unil aCa

Cot= Ec
tox
-7E FlCm
W= chamel wtdth
L= Aongth d chanmel chomy
kongth

tnaan Yeqon
deep ticda/ deep
Vos&&aVas -M)
E, Vos ts Smmll

neglact

Tdap ken)= unCon (Vas-4)os

channe
Yeststance ON esistamce RoN RpDs (om
Yesistamce otead by MoSFET
n lncan deqion

RoN
VoS=CoW(Vas-Ve)
 tanscomdutamce 2

TCsat) =
Un Cor Vas-V)

Imsat)= _T An Cox 2(Vgs-4)

2 L
VaS
9msat)- 9m AnCotW (as-)

Im sat)=m 27, AnCor

9mlsat)Im=
VGs-V
channel Aength madulalion
ebect
actoal channel omqth
phyical
AL chaml lemglh
dupleted channe lenath
L-AL undepleted channel
lomgth/ ettocve
chanrel
Aenqth
T=An Co (Vas-Ve) (1+ a
AL
Vos-ossat)
AL = a(Vos-
"os(sat)
 Vos-s (sat)) =a (Vos Vs(sat))

JoMnCon L (Vas-V(1+ (hs- Vhs(sat)))

amd i Vos>os(sat)
then Ao (as-V(143s)
2

channel Longth modulalkon (volt)

paonamuter

= whune V eaaly vottage

A

Output eistamce dnan yesistomce)

e t s theresistamce otteted
oy MOS FET n SaialEon Ae9n

If tho no chamel Aone th

mdulallen, them = o.
 t re-euislhra charrd
P-Chaned
MoSFE T
enhar cement tupe
nmi.ally otb -amt
D MoSFET
G
VasVGS cu-o s
V enrancemert
G = Ts =0 VEC+) :depleEen
GSV OV Jnean
VesVE ON sanalion
intar (kioda)
VES and
osVas-
Saluraicn
Vas and hs Ves-V

(Vo VG-)
ina
-Ts a4 Co ((s-V)Vos- Vos
2

Ag Cox (Vas-V %s- os

Sataier 2

uitho theut onideing

chane engt
odulalitn
4yCoer-K)(1+(l -| os(cal)
wetk cuM

osl Vs (at)
then
Tg pou() (Ves-V) (1+a Mosl)
d-lot)
VA

VGs VsG
Vps Vso

VsGVt| -9 cut-obb
Is0

sG Vel0V Satnaton
Avea btode)
VsGVe and - |VEl

Vo Vt 141)
Sauralion

SG and Vsp Vsg -14)

Vo&Va+V-I)
ionea
To=T-U,o (oa-1Ve1) Vp- VsD 2

Sairalten
2

( 20
4
m MOS e n h o n c e m m i

on
Cutott
V6sMe) (Vase

s a t uv a l i o m

m ( t a t t d e
(Voses-Ve)

(voe-e Voa e)

Co
Tn s-V)s- ys

PA0S
as VsG
VDs VsD
 Ip-04 mA, D-05 V, Vt=0 9V
Lm, W-32 m .
tAn Cox 100(UA
Ro-? Rs = ?
2.sV
Ro

Rs

2-SV

tus aktme moSfET ts t tl

ut lt us chiek

VasV oVg-V
0.5 0-0.4
O-V0.7
(tue)
Th mos FET
s-0-P i le in Saira kDn

cttw ONumn sauraltdn

tn ( Ves - H)
2

Cy ron1oo uPl (32) (c-- e)) Vs .2/

:
x0 xiOOx I0 x 32(-V-0 2)
0.8X10 10x32(-g-0-)
V - 0 = 0.5
32
s= 0 S+0:7
s=12 ' s = - !:2U
i
 Vs=- 2 V, V=0.5
Ro= Rs=s(-2.5 .25 k
.5-Vo -5K, Is
To

VE = 1V,
V=-V K )= 17mA
tend Rp
5V
Vas Ctue)
R -0.1 V VoVG-V
5V
tnea
=x2x An or(s-V)Vos - Ves
2

Iop(6-1)(o.1)- 0 2

4l0-)- 001) mA = 0395 rA

= 5-0.1 Ro=5-0: K
RD= = |2 405 kul
RD O 395

10V 10V

310M

Kn(h)= mAy
1OMJL
6k Ts ?
Vs?
 xI0
1O 10

5-Vs Ve 4V > oN
Salu a l 0 n

oV-VE
5-1 o4

V4Vpz1)
Asun MOSFET
S Tn sauralom

Tp=UnCox L
as-)

Vs ImA (5-V-1= Ima (4 -Vs

GK
2

Vs= 6K Xx imA (+-V)

Vg3 (4-1)- 3(-)= 3-34+16
3V-26 Vs t 48 =0.

V= 25 t 254(3(48

Vs= 5.3V, 3
Vs3V = 0.s mA
=10-(0s) 6 = ?V
I-2m
T Vgs=3V, V=1V,
enel
Sol S 3V
G-Vs3 Y-0 =F3
V=3 Vett
 IV GS= 3V

T= 2mA

V2- ?

-9V
GS 3V - Va =3 V=-2

Vasl 3v, V =-IV, I= 2mA, Va=?

P-channel
V3
--IV
enhamce mnt

p-chamel
Cnhancemevt
Gs=-3V OSFE T
O - Vs = -3V Vas -Ve
--3 -3

ki()= K(L)= Tm}w

Ven=1V

oV
tind V fe a) k=
V= 2 sv
25 V
 -2 SV

V V
1Ok

-2:5V

V Ov
astnk sot PMOS & Nmos
lt us

o be cn at
U0s

to be în sat ot
fe Pmos
s a n d b>-4
- 2 5 ) I and V>V-1
25-0 ond %<l
0+2-5 md V >0-1
CTo ts n Sat We see thi -netthu
PMOS
Assume

NMOS- 4 t - on
p,oVG-Ip) V,-1
t botk an
-o) -15 t nsctaakion|

p xx225 mA
{ 2 5 M A -

then T-0 tn 1okJL

=t0tvt2s)-t25 iolt Csr

V0 vel!
bott are n sali valon!
 V Ap Cor=
To= 13 UA 3.5

tnd W, R

- ; bek+i
V - (Vo-5
10k 5-V 0 * | IVel20
5-07 o
Sel.
43V
3.s Y.3v(Tu)
Satur allem (atume)
R 350
o=p Go L (-/4pl) 30 +3 K
Us un= To = 6ou4 08 (5-- 0.7
5X2=E= 6o)(t3-k)
1SX2Xx08 I1s X1.6
60 x(y.3-3 60X0.64

Ve=IVK,'=120UA/v2
T= 120A,
ind w Wa, R.
L=l2= U
S

R I
-3.SV
H
-1 5V
 Connectca/ shovt ec
drain And qa a
CouidoA satoiatton.

120uA= R
(35-1.5-1)=(120 -5-1
20 A12 ) W-5-)
120A=I
o u)
R
S x1o 1SX10= I500XloI50K
12
20 )20 20
20
R = 12.s KVL

2 W I) 2= W2 (0.s)
8um
=2 W . O 25

= la =la wm T =120UA
V=IV Kn= 120 uA/2
W, Ws Ws
=
? SV

Sel
I=1201A
To2= Ia3 =

T 3-5V

20 AL(s-3s-) =
2
m
120 A
LA -1-s v

2 =2

3-5-1-5-D
2 2 8

15-0-y
irem/VE/=2V K(L) imRh -

rdl,) .
 -10

4K

V
1

2mA
-10V
s 0-V 2
VoYa-V
Assumi Sat

2 (%>-2)
m(0-y-2)= 0-V
44K

10-V2= 8 =2V

4 =(--) -Y-2-
Va=2Vot
GtWn

Vel= 2V kei)= ImA/ytndV

0V

daatn amo
J a t c axe Cemnioted

take salmakor
2

Sol u Cox (k-0-

1 mA=Ime (V-2)
2 V2

2 (%-
V -2 v K= 2+1 414
V3= 3.41y volts
e-2V, '(L)= I mA/2
ind, k.
-15V
2mA
Sot s>e
-V sa 1epl
Vs V4-02
7
2-5 k
-1OV
Vo&V +Verl
60+2

2oA= (10R)(V4-0-2
v2

V-) -2=2
-2=2 V=+ volts!
2 mA=.s+10 V+10 = 5
2 5k
s =-5Volts.
= +V, 5V
Vl=2V K(L)= ImAlu* tncl V, K
atn
10V
sel gat
shovtedJ
Ve
H 10--2H0 (V-- 2
8-V =
V --2
2mA 10= 2V -Vg >0
 2 mA = 1mA
y2 (10-V-2) 2= 10 -V - 2 = 8-V
8-V
4=10-V- V 6 elts

10= 26) - Vs = /2 V3
= 2 olt s
Va=6V
3 I V V= 6V =2
MOS FET Cemieted
Any emhamcenont type tn tt
as a dtode Comnect ed a m i s ó r
wil aways be in salusalken
aru b t NMOS O PMOS

w-

ain -Gat Shorted)

NnOS annistoo he (enhameeank)
o PMOS rantsto, es-ve (enhameement)
VLSIDestn
Y= AB +CD Y= AB+CD

-Y

A=, B= Y=o
C=l, D=\ Y=0

when either botn d hese pull doto)

poths twm ON, the otputY'is pullod o
amd t is hold Aouw until the tlp conhiquvalien
ichanged

Tf A,8beth ane onu, then the PD pad 4 c

aclavated and tho ouput Y ts held Jouo as

ApnaasA, B)ane high

) Tf c,obothau onN, them the PD paln2

ackvatedK amd th output Y ts hold Apw
as

Jomg as G D) ae hig
tt) all ON them oth
Tf A, B, C, D ae
ackvated
PD path 1 PD path 2 a
amd the output Y is hld Low

what will hopptn. n otn13/1

Combinalkons?

AB CO AB CD ABCD
00
lotal- 1)
01
0
0

Kemaining = 16-7=9

k (PDN)
C
A

-D
Jou hae a
Capactancewhich
(pul douen s) might Ae stoeno.
SCmetnitial
bottoge baed
n t h pAeviows
Stat.
If the e gs into ene d the othe
Cendetiors. . . the wil e no
ull doON pth . . them the olp
Pull
op
om the Capacitor is jwt hold
s t
o p ts Poalirg ox high tmp
State
pull- up stack

ABt CO

Vec

-B =B

- =D

(pull up nebak
ombinaleva npus ushue
thie
pull-dousn Ml ha Gone to held Aow
state pull-up
will tolp
hae tu olp
tralknghioh tmpedamae).
Y's Capacitamca
In tkde Cembinaliono oEnpuub whihu
Pull-dren ns tlea, pull-up w
wll hat ts olp hald high

I Cam e thox 2 outpul

So, thoefort.
wied 0R Commeclt on
thhough a
t o get a prepe p

Y= A8t CD
 = A8+ CD

-Vad

A- -B

-D
C

Ae+cD
AL
H

Y=A+BC

Vdd Poy A+Bc

A uA(8+)
B

B
A
c
 Vdd

B
-D

A
Y

Stzin
D = 2 L ) n

So that the

Pull-up dulay
A- Omd puull-dousY

delay a s Saml

p n= 24/
A

absoacted

Unit cmoS Int

-VAd
Yuwt
2
A width(alne)
PMOS is
deuble that d
width dNMOS.

CMOs Ivela
all th galzs ue
eatt l be sizal
wrt this knla.

Say y B (NAND 9at)

Y= AB

NAND (2-F)
galo
 Vdd

R
wrt/wen afimc
to the wnlt cMos

-Y niealor, we noud
have to Size the
A C Rl
hann stors in
my NAND gale.

tuovst Ca pull up/pull drsm 1esistamct is

iamisloYS.
th Citeion so a to sze thue

wOVst cae pull &wtstamce= R.

K-2

w o v t Calpull
up istance - &R

R
K=2

SanY=AB (NAND 3 qt)

=ABC

NAND ga
 Vdd

-y=ABC
A
8
h wovt - Cam
c /s Pull-up pa
o Pmos ts dndy
ene Pmos pulltrg
up
2 k RR (pull-up)
Tf all, the
K= PMOS Tamaisbs
Pull-up togetho
t well become
R-R/s (pull-dauon the paallel
Combinalton
K-3 amd thne
Msistamc
shall
R dhop.
If the
NMOS AUtstamce
dueps, it
q o c d as

the
deloy-
1 2R NMOS going us
 NA

CIad

dubirg pull-up
dubirg (Pa1os-oN, NMOS 308

-Vld

.Clmd

duning pull- doun

CAnd

eudy 5anxslor ib plaad y

egutoalomt morel RC
y (At6C)D (Stztna)
dd

Y
A
-C

) D

9 a Capacitamce

Vad
a l l capacttos
SCal as
-Vdd aW.
Cgdn

Cgsn Csb
 amd body cap
Souit

2Cn)
Pmos

H Cuy dmin and. bedy cop

Vdd

-3C

NAND-2 Jal
Uncontacted
Shaed

VAd difousibym
denot

doubla

Cowt

Capacitoama
t h

GC

Contocted:lulon
s h a r e d d i f t u t o n

YC- diy-uxon COumtall

harig Capacitomc&S
 -VAd
2

2C SeutuL 0nd bodu

mos

doi amd beduy Co

-Vdd

3C
L3C

NAND-2 4al Uno

CC

d i f - u k t n
NAVD-2 gale Y=AB

shaned
Comtacted

sharvd
umcontacted
dubt-ulon

NoR-3 alo
y= AtBtC
- VAd

A 6
6

C 6

A H4

Cn each t , e wl hat a
Capacitac d #C
dolay Loplc galts
WAND-2

VAd

A
Vout
L 6C

falldelay
aie doloy
2C

Woi4t
Lest
COA
Cae
Wost caR Cape delay dolar
dolam
Contami-

-nalion
PAcpagali ntaminallen
dalar
dola
V
PACpagaten

dolay

) aiR ppagallon dolau,

A6 10
R
dulay=6RC +28C
SC 8RCCpLH
2
t tse dolay
Contaminalon dela

doloy-3Rc
(A6-I100)
GC

OcLH 6C (s2)= 3RC

all pAopagallen dolay

Capacitos aa
a&ume all
inttially charrgad
(10-11)

PHL
=
RC + 2c(R
tRC
a l l Cenitaminalien dolau

CO1-31)
PHL= GRC

cHiL= 6RC

P L H 8 R C

TpLH
CPHL= 7RC
TCLH= 3RC
CHL = GKC
NOR-2-

y=A+B

VAd
A LA
4C

A B

3RC
= GCR+ +e(R/2)=
C1000)
1ORC
= 6RC + t¢(R)=
PHL
(do >10)
H GRC
(o900
CHL= se(R++C(a)= Skc
VeHL=
00-11)
 NANO-3

-Vid
A-

(sc+30)=9c
A

3C
B
hore all the
capacitors 9C, 3C,x

0-CHE.
Clong)
a n chaovged

tnttially

PHL9C(R) +3c(a)+ac()
RC+ 2Rc +RC = 12RC = {all paop
delay
Vdd.
C
A
Y
Q- A
C30)=
1B 3C hue only 1C

C H capacttso
chaageo Cntial
 PLH= qRC = fall cotaminalin delon!
OHL

PHL= 1RRC
CH= R
HLu

the dalay COnnedt

So, as o minimße siqnal
the at coming to the ontsior
noda.
which s cloe Otothe output

VAd
ti B
A

Os&ume

all capacitog
3C
I0 C a u tttially

Clon ncharuged

PLH 9CR 3c(R) + 3c(E) =JSRc

(ABC= Il OI,

cLH 1R= 3RC

3.2
MOSFET (4 temiral dev)

at gate detemines
Votage app.lted
h t w muh Culot }euws
hs the 0uhe 4 dain ports

Body 4th teminal

Tts n. s setonday as l t
only Sevcs to modulalk
the deuta chanatenlies
4 paramettrs

he Cenududsihy the chammel s

Modulated
bythe gatt votage
larga the vovo Hage largen the
Suunt amcl Amalle the istarcl
the Conduceng channel

Lso type d mosfeT

n MOS (Sinmilay to vipn Tx

P-Substvale

nMOS t. Co 2n' dra

ènbedded
k Souree Meyions
subsrat.
tn a p-tyr

elecbou moving
The
he C u t ls cauied by
though am -tyre chanmd
Sowrvc doam
 Mas devices cam also le made utn9
On -typc Substrali and pt daain t
bamaist
Soha vegionaA In Such a

thhoug
MentiCanied by heles wovtng
Callrl
dleuice i
aP-ype chanmel The
The

a P-chamel MOS.

besmenal devtce
deuia PMOS 4 -
NMOS 4 - termènal

G B s

Gomnected
m nected to
to
gnlally
Stnc
Stvc Atru body
that
thentcal fo atl devias
a dc Suppy Vtd fr PMOs).
ame typel gre or Nmos
the not shorin, t
I f 4tk tamênal Cs CemReted t u
amumd that tha brey
the apprppriato suPPly
UMos wxd n
NMOS Led en degital eercuêts
Cmalo9 drCuetB
3.32

s
PMOS uxd ên dgta
CyCults PMOS USA in analo

D
JS
3.3.2

MOS Undor Static omdrs

Cnhuctibn& wlking c
Academy Enhancemgmt tye MOSFEr

video

2Es: 0 Votage aCros the

w- h a t deplethon
def {aye
Csubstrate depes

son vaa£om»
slong ohidnh ocw
at a voltage
eual to 0 )
as the gato
rodtag tndLANs, fel me potnal
the pokonital at
thu Alen suorfa

Point ytadhts
atSome Citical value whene

the stmetonductor

Sudfacemvers t
to n - t y p Lm a l n i a l

The Valae dVas whou hOrq traalon

otcua Calbd tru Aeshedd oltage ( )

VgVrpt3(V1-a + -V-4
Vro t x thutheld vrttagt br Vg =o.
 omponens
n oseral enstanls
Vis a malbtal
which a r e en wok fn.
mot df in wok
Such as
the difence m a l e i a l
maleial,
sabbhatë
amel
bls 9ah theckrs ,
te Femevoltage,
the omlde brapped
empunities
the charge elschamnel
and
oce implanted
at the to
2
onide, doage u s t m e n t .
alh
toesheld ad
fol
an
has
The Souna-buk voltage KsB
thsshetd.
o the
Cmpait
Resisere epeialon (ltnear duep) egion)
and a mall
*mall
A8ume voud
that Vas>V
qPpltcd k/w
Sowrce
k daatrn!
Uotage Vos
vakage
- K - Mas-
2

=
Kn (as-VF)Vos-Vas

For Smallo valus d Vas, the guadratic

and then
Cam e 4 noled
baib
e bobewe a tnea dependeurL J
Vas amd
e" holds
he 6peation f i
m Jhoe the abore
Callod aeeeeteve r)voa jitn
 SaturaEon Acgton
Vas (sat)
L-L

JSaiwralk®n
La ual chanel
Comgtt
L

The ehtecre channel, ongik=(L-aL)

to be iauellil b e
Ro the Sereice

afa that eluytld (elecbie feld)

L+2SL=kd
tn the depletion yien
so Poukul that the) t wil
take the e n no t t m e
tthe draln kide!

AnCo W
- s-4) 1<1

An L (1-AL) (s-V)
T nlor +L (as-+)* nat
AL Vps -Vastsat))
DL=a'(os - Vas (sat))
Vos- Vos- Vos(sat) )
l(s-ostoek)
T Anox . (V-V) (Ha (Vas-s(cat))
chavnel lemgth modulation pavamcktr
CvolE-9

I Vos) Vostsak) ;
nox (us-Vr (HVas

(o

DVos

Vos[eat) Nos
-VA dan
L G S t a n c L

sAope- o
VA
ATo-cum)
To Tohoot cLM |(+AVos)
=

(wth"
CLM Va= eanly voltage
volt) oOutput Ausistane
VA Yo=Vps
 n-chamel enancgment MOSFET
S Gs+O D Gs< Ves<
TuTirTITTITITIM 1

depletion,
egton
B
Vs-0, 0cVas
G
D
S

deplettom
Teqton

os=0,Gs =0
S Gs >V D

deplelto
Y-type eaton

inveratonlayer
Vos=0, Vas>V
 owg chanvull dovt

shot chamel doutce

Vos

Tsanadeductance(tm) dpa
MOS Taamtstor

(nmos
+ Vos

Sm DVes CA) Stemon S)

G

v(mho)

S m =s l o p e

VGs
 as-/Gs+ gs Small
stanal
total
-potnt
OY
dc eperaleng
Point
d- 9mgs
We know that
o- fas) oVGS
T+d= Tp + .Ogs +L gs +
Vas Vs
neqlect
Totd-To + Ugs
VGS
ta- gs id-9mgs
VGs

VGs >V NMOS ts tn skong

nverstonT
CVas >Vr ?)

VoSVGS-V Nmos ts tn salwation

n

=An Co (s-r)
Im= An Cox 4 (Vs-Vr)
 Jm= un Cox (V4s-V)
as-V) at
the debegn
Daamelors!
Nmos tn sboma nveulon- Saliaation
)Sm=A, Co (vas-VT)0
4,Cox Ves-Vr)
L 2 MnCo T
Sm 2unCo To
39m 2
Vas-VT
9 h, To, as -V)
but thwe ane my 2 ndependent Uanlables.
C I z T and w the
I ha no choice 0n (hs-Vr
Onky a baniables ane tndpendent.
Shun to we hich ep out d 0 , , r
ea witt exed paxamlir|
ewith iable!

Clact danivaloyM

T-Fes. Vs)
o Tpt A =(Vas+ AVas Vos+ Vos

DGs
Tt AT F{Vas,Vos )+To_i+ dL
VGS OVpS

Vas gs AVsds = d

T +d f(Vas, Vos)+Tp gs +o. 9ds

T VGS Vps

VGS
VoS-COnst NoS Vcm(onst s
as=const
94
transcnductamce
dratn Cenductamea
d= 9m gs +9d°As 9m gs+ Vas
as
d= gm gs + Vds

G D

gs gs
S

Aw freg, Small signal model)

A= whoe
VA
Vaealy votage
VGs lvos= const
9A-
VSvGs =Cemst
d- gmgs
+9d as Jmbgs+
=

ds
 uama Comductance amad doatn
Lnear veaom
-ineay Yests tancL

To
9=o_
Mntox (Vas-V) Vos- Vps
VoS Vgs= Comat

9d Un Cox (Vas-V -Vos) T dop trodu

ar n a Mgion
wt Cam hawe
An Co (Vas-Vr-Vhs)
Ano Ves-V)

n Co Vps
L
Vgs Vs=const

SotnyaEem veaton oamscemductance amd dakn

reststamce

Tp=AnConVas-V (1+aos-Vas(eat
Vos Vas=mat nCor (Vas -V)

Mn Cov (Ves-V) +a (Vos-Vsea

OVas Vbs Const
=

9mno s-)+a(Vas-stsat)
 cca tpd, ted
teday tpcq
tsetp thold

ep
p Jogic p7epagallon dalay
ted
ted Aogic centaminalken delay
tpo iatch/ Flep ck o a prepagatien dalay
tccq Ratch| tlop clk a Comtaminakon delay
pdg atD pepagalken dalay
tcdg Lateh D Q Cemtaninalion dalay

tsep
tsetnpAatch/ tlep setp nme
huld atch/ tlep held tne
clk ck

FFA
GoTmls D2

FF2

FFs ar y- eay tö ue,

Suppåtd
Ppotd
a l l teks.
tbeacw0
 cAock edap ara net imstam taneous

max-dekay: lops
Tak
ek

tpd
D2 XXXXX

It har le Aalke atleat one

oehora t h adive
,tsene
dek edge
Tcilk(tpcq + tpd + teap
yoL haue Akeuo;

skews qoodsov ixing. seup

tve cleck
a

ut Cam caue held olaions

vietalion
a held
skews guand
cam against
- v e cleck
u t cam cauik a seup totalian
viotation
Cae, Consides a Ve ck skew.
. worst

them Talk 7tpq + tpd + tsekup t+ ke

dTak -o t beue+tska
tskea
Sequomcing, ovehead

min-delay,: leps

D
dk
t h data Mas

t o b es t a l a
Gne
h o l d

e n e

atleat
a c k v ec e c k
after h e

os edge
ck

DDX Da

D
kthed
Hoe tho dala ai COm vae Ahmough
amd altet D2 whwch ned o Atmplad
at ty samt clock edge
tccg+ td thola
(or)
theldtec t td
Lfwe haue a sdup Jme tallure emove
t imcreaseto ime peiod the clock.

you hac to Cacud wtth hold

vioaio Yo
no ue adiusng Telk onc tre chip
is niads

' o wt Cae
skew Conbider twe keus!

then teca+ tcdtheld +tskoss

mndmuwm logie delayp
cd hotd+tcke-teea

TE 8souing. (tbe=0)