SK50GD066ET
Absolute Maximum Ratings 1 +- 2,
Symbol Conditions Values Units
IGBT
/34 5 1 +- 2 788 /
! 5 1 *9- 2 1 +- 2 78 $
1 98 2 -8 $
!:; !:;1 + ! *88 $
/"34 < +8 /
/ 1 =78 /> /"3 ? +8 /> 1 *-8 2 7 A
SEMITOP® 3
5
/34 @ 788 /
Inverse Diode
IGBT Module !& 5 1 *9- 2 1 +- 2 -7 $
1 98 2 BB $
!&:; !&:;1 + !& 78 $
SK50GD066ET !&4; 1 *8 >
)
5 1 *-8 2 =+8 $
Module
! :;4 $
Target Data )5 CB8 000 D*9- 2
CB8 000 D*+- 2
/ $, * 0 +-88 /
Features
1 +- 2,
Characteristics
Symbol Conditions min. typ. max. Units
IGBT
/"3 /"3 1 /3, ! 1 8,E $ - -,E 7,- /
!"
# !34 /"3 1 8 /, /3 1 /34 5 1 +- 2 $
$%
# &' 5 1 *-8 2 $
!
(
!"34 /3 1 8 /, /"3 1 +8 / 5 1 +- 2 788 $
5 1 *-8 2 $
Typical Applications* /38 5 1 +- 2 8,F *,* /
1 *-8 2 8,E * /
!)
*+,- ./$ 5
#0
-,- .' 3 /"3 1 *- / 5 1 +-2 ** *- G
5 1 *-82 *9 +* G
/3 ! 1 -8 $, /"3 1 *- / 5 1 +-2
)0 *,B- *,E- /
5 1 *-82
)0 *,7- +,8- /
=,* &
/3 1 +-, /"3 1 8 / 1 * ;H 8,+ &
8,8F= &
I" /"31 C9/000D*-/ +-8
+E
:" 1 *7 G / 1 =88/ =+
3 J 1 +B=E $JA !1 -8$ +,+ K
:" 1 *7 G 5 1 *-8 2 =8*
J 1 +B=E $JA /"31 C9JD*-/ B-
3 *,9= K
: 5C
!" *,** LJ'
GD-ET
1 05-10-2009 DIL © by SEMIKRON
SK50GD066ET
Characteristics
Symbol Conditions min. typ. max. Units
Inverse Diode
/& 1 /3 !& 1 -8 $> /"3 1 8 / 5 1 +- 2
)0 *,- /
5 1 *-8 2
)0 *,- /
/&8 5 1 +- 2 * *,* /
5 1 *-8 2 8,F * /
& 5 1 +- 2 *8 *+ G
5 1 *-8 2 *+ *B G
® !::; !& 1 -8 $ 5 1 *-8 2 BB $
SEMITOP 3 I J 1 +B=E $JA B,E A
3 /1 =88/ 8,9+ K
IGBT Module : 5C
*,9 LJ'
;
. +,+- +,- (
=8
SK50GD066ET
Temperature sensor
:*88 1*882 :+-1-.G BF=<-M G
Target Data
Features This is an electrostatic discharge sensitive device (ESDS), international standard
IEC 60747-1, Chapter IX.
* The specifications of our components may not be considered as an assurance of
component characteristics. Components have to be tested for the respective
application. Adjustments may be necessary. The use of SEMIKRON products in
!"
# life support appliances and systems is subject to prior specification and written
approval by SEMIKRON. We therefore strongly recommend prior consultation of
$%
# &' our personal.
!
(
Typical Applications*
!)
*+,- ./$
#0
-,- .'
GD-ET
2 05-10-2009 DIL © by SEMIKRON
SK50GD066ET
Fig. 1 Typ. output characteristic, inclusive RCC'+ EE' Fig. 2 Rated current vs. temperature IC = f (Ts)
Fig. 3 Typ. turn-on /-off energy = f (IC) Fig. 4 Typ. turn-on /-off energy = f (RG)
Fig. 6 Typ. gate charge characteristic
3 05-10-2009 DIL © by SEMIKRON
SK50GD066ET
Fig. 7 Typ. switching times vs. IC Fig. 8 Typ. switching times vs. gate resistor RG
Fig. 10 CAL diode forward characteristic
4 05-10-2009 DIL © by SEMIKRON
SK50GD066ET
UL recognized file no. E63 532
-+ 4
,
N ,
O +
-+ " C3
5 05-10-2009 DIL © by SEMIKRON
