B.E. Second Semester (C.B.C.S.

)
Question Bank
SUBJECT - ADVANCED ENGINEERING MATERIALS

Unit Question Questions with Options Answer

Number Key
Unit 1 1 In an energy band diagram of a solid, conduction band is a)
located at
Band
Theory of a) Higher energy than that of valence band
Solids b) Lower energy than that valence band
c) at same level as that of valence band
d) in the energy gap

2 In N-type semiconductor, impurity atoms b)

a) Accept electron from semiconductor atom.

b) Donates electron to semiconductor atom.
c) Accept holes from semiconductor atom.
d) Donates holes to semiconductor atom.

3 Highest energy gap value is found in case of........ c)

a) conductors
b) semiconductors
c) Insulators
d) Germanium

4 Solids in which Energy between conduction band & valence a)

band is ≤ 2eV are --------.

a) semiconductors
b) conductors
c) Insulators
d) Crystals

5 Energy region between bottom of conduction band and top of a)

valance band in semiconductors is known as

a) Energy gap
b) Fermi energy
c) Conduction band
d) Valance band

6 In case of semiconductors, Fermi energy level is present in ....... c)

a) conduction band
b) valence band
 c) energy gap
d) above conduction band
7 Fermi function f(E) is expressed as d)

1
a) ( E−E f )
2 KT
1−e

1
b) (E +E f )
2 KT
1+ e

1
c) (E −E f )
2 KT
e

1
d) (E −EF )
KT
1+ e

8 The mathematical function which gives probability of finding a)

the electron in the given energy state having energy E is known
as

a) Fermi function
b) Work function
c) Energy function
d) Wave function

9 Fermi function is dependent upon c)

a) pressure
b) forbidden gap
c) temperature
d) Mass of an electron

10 Electric current in Intrinsic semiconductor is mainly due to c)

a) Large number of electrons

b) Large number of holes
c) Equal contribution of electrons and holes
d) None of above

11 Electrons move from valance band to conduction band in c)

Intrinsic semiconductors at temperature

a) T = 0°K
b) T< 0°K
c) T > 0°K
 d) Independent of temperature

12 Vacancy left behind in the valance band due to transition of a)

electron to conduction band is called as

a) hole
b) proton
c) photon
d) positive ion

13 In case of Intrinsic semiconductor, Fermi level lies d)

a) Closer to valance band

b) Closer to conduction band
c) Anywhere in energy gap
d) At centre of energy gap

14 Semiconductors with added impurity are called as d)

a) Intrinsic semiconductor
b) Pure semiconductor
c) Compound semiconductor
d) Extrinsic semiconductor

15 Majority charge carriers in N-type semiconductor are b)

a) holes
b) electrons
c) protons
d) photons

16 At temperature T = ------, acceptor level is empty in P-type a)

semiconductor.

a) T = 0K
b) T = 0°C
c) T > 0K
d) T< 0K

17 Identify following energy band diagram, b)

 a) Metal
b) Semiconductor
c) Insulator
d) Mineral

18 According to Band theory of solids, free electron moves in a)

a____ potential of lattice.

(a) Periodic
(b) Constant
(c) Zero
(d) None

19 Which of the following have donor level? b)

(a) Intrinsic semiconductor
(b) N-Type semiconductor
(c) P-Type semiconductor
(d) Conductor
20 At 0K, Semiconductors behave as a)

a) Insulators
b) Conductors
c) Metals
d) Superconductor
21 In semiconductors, conductivity _______with increase in c)
temperature

a) Remains constant
b) Decreases
c) Increases
d) First decreases then increases
22 In semiconductors, conductivity _______with added impurity. d)

a) Remains constant
b) Decreases
c) Does not change significantly
d) Increases
23 Band theory of solids is based on ______ of electrons. b)

a) Particle nature
b) Wave nature
c) Quantum nature
d) different nature
24 As per classical free electron theory, electrical conductivity of c)
metals is expressed as
 (a) σµ= ne

(b) ρ= neµ

(c) σ= neµ

(d)µ = neσ

25 The quantity of electricity flowing per unit area per unit time at b)
a constant potential gradient is known as:

(a) Resistivity

(b) Mobility of electrons

(c) Conductivity

(d) None

26 Resistance “R” of a conductor is directly proportional to __ & c)

inversely proportional to _

(a) Area & Length

(b) Length & breadth

(c) Length & area

(d) Area & conductivity

27 If the potential difference ' V’ be applied across the length ‘L’ c)

of solid. Then electric field ‘E’ produced is given by ______
a) E= V/I
b) E = L/V
c) E = V/L
d) E =VL
28 Macroscopic form of Ohm’s Law is ______ b)

a) R = ρ L/A
b) J = σ E
c) I = V/R
d) J =I/A
29 Velocity of electrons moving due to the action of electric field a)
is called ______

a) drift velocity
b) Angular velocity
c) diffusion velocity
d) constant velocity
30 Drift velocity per unit electric field is known as_____ c)

a) Conductivity
b) resistivity
c) mobility
d) Angular velocity
31 __________ is the highest filled Energy Level in a conductor at a)
0K.

a) Fermi level
b) energy gap
c) band gap
d) energy quantization
32 ________decides the distribution of electrons in various energy a)
levels as a function of temperature.

a) Fermi-Dirac function
b) wave function
c) Fermi level
d) energy gap
33 At T = 0K, and for E< EF, in conductors, the Fermi function is b)
given by 𝒇(𝑬) =

a) 0
b) 1
c) indeterminate
d) Infinity
34 The probability of occupancy of Fermi energy level in a)
conductors at any temperature above 0K (T > 0K) is ________

a) 0.5
b) 1
c) 0
d) 0.4
35 On the basis of band structure, Solids are classified as b)

(a) Conductors, Semiconductors, superconductors

(b) Conductors, Semiconductors, Insulators

(c) Conductors & superconductors

(d) Conductors, Insulators & superconductors

36 The splitting of outer empty energy levels of combining atoms b)

form_______ band in a solid
 (a) Valence band

(b) Conduction band

(c) Energy gap

(d) Fermi Energy

37 The conductivity of semiconductors is --------- that of c)

conductors and insulators

a) More than
b) equal to
c) between
d) None of above
38 The units of mobility are a)

a) m2/V.s
b) Volts/m
c) Ohm.m
d) Ampere metre
39 According to classical free electron theory of solids, the a)
conductivity of a solid is ------------------- the concentration of
charge carriers.

a) directly proportional to
b) indirectly proportional to
c) greater than
d) less than
40 P-type semiconductor is formed by addition of -------- impurity b)

a) Pentavalent
b) Trivalent
c) Monovalent
d) bivalent
41 ------ are created when trivalent impurity is added to P-type b)
semiconductors

a) Tightly bound electrons

b) Holes
c) Free electrons
d) Valence electrons
42 A pentavalent impurity is a --------- type of impurity. a)

a) Donor
b) Acceptor
c) Ionic impurity
 d) Bound impurity
43 Calculate the current density in copper wire of diameter 0.16 d)
cm which carries a steady current of 20 A.
a) 4.976 x 106 A/m2
b) 4.976 x 107 A/m2
c) 9.952 x 109A/m2
d) 9.952 x 106 A/m2
44 Calculate the drift velocity of the free electrons with a mobility b)
of 4 × 10–3 m2 / V . s in copper for an electric field strength of
0.5V m–1. (Charge of electron =e =1.602× 10−19 C ¿

a) 1×10−3m/s
b) 2 ×10−3 m/s
c) 4 ×10−3 m/s
d) 3×10−3m/s

45 Find the mobility of electrons in copper assuming that each a)

atom contributes one free electron for conductivity. (Resistivity
of Copper = 1.7X10-6 Ω-cm, free electron concentration in
Copper = 8.5 ×1028/m3, Charge of electron =e =
−19
1.602× 10 C ¿ .

a) 4.32×10−3 m2 /V . s
b) 4.32×10−5 m2 /V . s
c) 4.32×10−1 m2 /V . s
d) 4.32×10−7 m2 /V . s

46 The conductivity of silver at 20°C is 6.8 × 107Ω –1 m–1. b)

Calculate the mobility of electrons in silver assuming that there
are 5.8 × 1028 conduction electrons /m3.(Charge of electron =e =
−19
1.602× 10 C ¿
a) 7.318×10−2 m2 /V . s
b) 7.318×10−3 m2 /V . s
c) 7.318×10−4 m2 /V . s
d) 7.318×10−5 m2 /V . s

47 What is the probability of occupancy of quantum state whose a)

energy is 0.10 eV above Fermi energy at T equal to 800K? ¿
eV/K)

a) 19%
b) 81%
c) 16%
 d) 84%

48 Use the Fermi distribution function to obtain the value of F(E) d)

for E – EF = 0.01 eV at 200K.¿eV/K)

a) 0.4421
b) 0.4241
c) 0.3985
d) 0.3589

49 In a solid consider the energy level lying 0.01eV below Fermi a)

level. What is the probability of this level not being occupied by
an electron?¿eV/K)
a) 0.405
b) 0.595
c) 0.684
d) 0.316

50 Evaluate the Fermi function for energy kT above the Fermi a)

energy.
a) 0.2689
b) 2.689
c) 0.02689
d) 26.89

Unit Question Questions with Options Answer

Number Key
Unit 2 1 When a p n junction is formed ,----------- migrate from p b
–region to n- region
Semiconductor
Devices
a)Electrons
b)Holes
c)both a and b
d)None

2 The current due to migration of majority charge carriers b

from p to n region is called as -------- current
a)Drift current
b)Diffusion current
c) Reverse saturation current
d)Breakdown current

3 Forward biasing of p-n junction diode gives rise to A

a) Reduction in effective potential barrier across the
junction
b) Increase the depletion region
c) Reduces the majority charge carriers crossing the
 junction
d) Reduces the current flowing through the junction

4 Choose the correct option regarding doping of Zenerdiode . A

a)High doping of p and n type materials

b)Low doping of p and n materials

c)High doping of p type and low doping of n type

materials

d) Low doping of p type and high doping of n type

materials

5 Which one of the following is incorrect statement for C

half wave rectifier?
a)In half wave rectifier only half cycle of the input is
used to get output
b)only one diode is used for rectification
c)Centre tap transformer is required for the circuit
d)output contain only positive half cycles

6 The advantage of bridge rectifier over full wave rectifier c

is
a)We get unidirectional waves for each input
b)The voltage developed across the load is
unidirectional
c)No special centre tap transformer is required
d)None of these

7 Zener diode is commonly operated in a

a)Reverse bias mode
b)Forward bias mode
c)Unbiased mode
d) All of the above

8 The tunnel diode works on the principle of a

a)Quantum tunnelling
b)Classical tunnelling
c)Fermi Dirac statistics
d)Maxwell Boltzmannstatistics

9 In Tunnel Diode p and n type regions are b

a) Lightly doped
b) Heavily doped
 c) Moderately doped
d) Not doped

10. Which of the following statement is correct? d

a) Zener diode works only in reverse bias
b) Zener diode works same as ordinary diode in reverse
bias
c) Zener diode does not work in forward bias
d) Zener diode works similar to ordinary diode in
forward bias but behaves differently in reverse bias

11. In tunnel diode the total current is due to --------- a

a) Tunnelling& diffusion of majority charge carriers.

b) Tunnelling&diffusion of minority charge carriers
c) Tunnelling only
a) Tunnelling of electron from P region to N region

12 The heavy doping in zener diode is required for----- a

a) Reduction in width of depletion region

b) Increasing the width of depletion region
c) Keeping the width of depletion region unchanged
d) All of the above

13 A photodiode ---- c

a) Converts sound into electrical energy

b) Converts electrical energy into light energy
c) Converts light energy into electrical energy
d) None of these

14 In photodiode the leakage current is obtained when b

a) Light is incident on depletion region

b) No light is incident on depletion region
c) Light is incident on P region only
d) None of these

15 In reverse bias the current flowing through the diode is due to

-----------

a) Minority charge carriers

b) Majority charge carriers
c) Due to both minority & majority
 d) Other

16 In LED light is produced because of b

a) Generation of electron and hole pair
b) Recombination of electron and holes
c) Generation of internal potential barrier
d) None of these

17. The light produced by LED is in the range of --------- d

a) X-rays
b) Visible region
c) IR region
d) Both b & c

18. The intensity of emitted light in LED is significant only if a

a)large number of electrons jump from conduction band to

valance band

b)large number of holes move from valance band to conduction

band

c)depletion region is very large

d) None of these

19. Transistor is a device which has c

a) Two terminals and two junctions

b) Three terminals and one junction
c) Three terminals and two junctions
d) Two terminals and three junctions

20. In NPN transistor a

a) P type semiconductor is sandwiched between two N

type semiconductors
b) N type semiconductor is sandwiched between two P
type semiconductors
c) Emitter and base are N type and collector is P type
d) None of these

21. The arrow in the symbol of transistor indicates d

 a)Position of emitter

b) The type of transistor

c)The direction of flow ofconventional current

d) All of these

22. In a transistor the collector is c

a) Heavily doped
b) Lightly doped
c) Moderately doped
d) Not doped

23. If the transistor is to be used in active mode a

a) EB junction is forward bias and CB junction is
reverse bias
b) CB junction is forward bias and EB junction is
reverse bias
c) EB and CB junctions are forward biased
d) EB and CB junctions are reverse biased

24. The main function of base in a transistor is d

a) To supply the charge carriers
b) To collect the charge carriers from emitter
c) To collect the charge carriers from collector
d) To transfer the charge carriers to collector without
much loss

25 In PNP transistor b
a) Holes are majority charge carriers in base
b) Electrons are majority charge carriers in base
c) Holes are minority charge carriers in emitter
d) Holes are minority charge carriers in collector

26 In case of a transistor,collector has maximum width a

amongst the three terminals because
a) To dissipate the heat generated during the transfer of
charge carriers
b) To emit the charge carriers
c) To transfer charge carriers to base
d) To transfer the charge carriers to emitter

27. Transistor can be connected in ------ d

a) Common collector configuration
 b) Common base configuration
c) Common emitter configuration
d) All of the above

28. If a piece of semiconductor carrying current is placed in a

transverse uniform magnetic field then electric field
induced is
a) Perpendicular to direction of both current and
magnetic field
b) Parallel to direction of both current and magnetic
field
c) Perpendicular to the direction of current and parallel
to the direction of magnetic field
d) Parallel to the direction of current and perpendicular
to the direction of magnetic field

29. The correct equation for hall voltage is c

WpJ
a) VH=
Be
WBJ
b) VH =
pt
WBJ
c) VH =
pe
WBJ
d) VH =
At

30. The value of Hall coefficient for p type sample is b

a) Negative
b) Positive
c) Very large
d) Very small

31. The mobility of charge carriers in Hall effect depends a

on
a) Hall coefficient and conductivity
b) Hall coefficient and electric field
c) Current density and resistivity
d) Width of the material and resistivity

32. Hall effect can be used for d

a) Determination of carrier concentration
b) Measurement of magnetic field
c) Determination of carrier mobility
d) All of these
33 The voltage at which very large current starts flowing in reverse
bias mode of a diode is called as---------

a) Cut-in voltage
b) Break down voltage
c) Threshold voltage
d) Biasing voltage
b

34 The n- side of the depletion region contains positive a

ions, so it is at ------- potential than the p-side of the
depletion region
a) Higher
b) Lower
c) Both a& b
d) None of these

35 The Fermi level in both p& n regions in equilibrium a

condition is at the --------level
a) Same
b) Different
c) In p –side it is towards conduction band
d) In n- side it is towards valance band

36 Biasing a p-n junction diode means c

a) connecting the positive terminal of the battery to p –
type and the negative terminal to the n-type
materials
b) connecting the negative terminal of the battery to p-
type and positive terminal of the battery to n-type
materials
c) a or b
d) Diode is not connected to the battery

37 A rectifier is a device that a

a) Converts alternating current into direct current
b) Converts direct current into alternating current
c) Amplify input voltage
d) None of these

38 Width of P region in LED is smaller to ensure loss of

intensity by

a) absorption
 b) reflection
c) diffraction
d) transmission a

39 During forward bias, the width of depletion region in p- b

n junction diode
a) Increases
b) Decreases
c) No change
d) None of these

40 The current flowing through the p-n junction diode is b

-------- during forward bias
a) Low
b) High
c) Zero
d) All of these

41 The reverse current that exists when no light is incident at the b

junction of a photo diode is known as

a) Dead current
b) Dark current
c) Break down current
d) None of the above

42 Asymmetrical doping in LED is required for----- a

a) unidirectional emission of light

b) forward bias
c) reverse bias
d) to minimise recombination

43 The following diode emits light a

a) LED
b) Zener diode
c) Photo diode
d) Tunnel diode

44 Calculate the Hall angle for a semiconductor if the Hall c

coefficient is 3.66x10-4 m3/C,resistivity is 8.3 x 10-3ohm meter
and flux density is 0.5Wb/m2. .(Charge of electron =e =
−19
1.602× 10 C ¿
 a) 0.02050
b) 1.170
c) 1.260
d) 3.50

45 A Semiconducting specimen of 5 mm width and 0.2 x 10 -3m a

thickness carries a current of 10 -3A along its length. When the
magnetic field of 1 Wb/m2 is applied perpendicular to its length
and its width, Hall potential developed is found to be 10 mV.
Determine the number of charge carriers per unit volume. .
(Charge of electron =e =1.602× 10−19 C ¿

a) 3.12 x 1021 / m3
b) 3.12 x 1020 / m3
c) 3.204 x 10-21 /m3
d) 12.4 x 1016 /cm3

46 An n-type germanium sample has a donor density of 10 21 / m3. b

It is arranged in Hall experiment having magnetic field of 0.5 T
and the current density is 500 A/m2. Find the Hall voltage if the
sample is 3 mm wide. .(Charge of electron =e =1.602× 10−19 C ¿

a) 47 mV
b) 4.7 x 10-3 V
c) 0.2127 mV
d) 4.7 V

47 An electric field of 100 V/m is applied to n-type semiconductor. d

If Hall coefficient is 0.0125 m3/C, find current density in the
sample if electron mobility in the semiconductor is 0.36 m 3/V.s.
.(Charge of electron =e =1.602× 10−19 C ¿

a) 3.4722x 10-4A/m2
b) 28.08 A/m2
c) 28.80 A/m2
d) 2880 A/m2

48 In a NPN transistor circuit, the emitter current is 2mA & a

base current is 20μA.What is the value of collector
current?

a) 1.998 mA
b) 0.78 mA
 c) 0.999mA
d) 15.78 mA
a

49 If the emitter current is 6mA and the collector current is 5.75 d

mA, what is the value of αdc

a) 95.8
b) 1.04
c) 10.4
d) 0.958

50 A transistor has a βdc of150. If the collector current is 45mA, c

what is the base current?

a) 3.33 mA
b) 4.5 mA
c) 0.3 mA
d) 45.3 mA

Unit Question Questions with Options Answer

Number key

Unit3 1. The origin of basic source of magnetism is ------------- B

Magnetic
A. Neutral particles alone
Materials
B.Movement of charged particles(electrons)

C.Magnetic dipoles

D.Magnetic domains

2. The unit of Magnetic permeability is ----------- D

A. Tesla
B. Henry
C. Tesla / m
D. Henry / m
3. The unit of Magnetic field strength is ------------ C
A. Wb / m2
B. Wb / A.m
C. A / m
D. Tesla / m
4. Magnetic materials are classified on the basis of Hysteresis D
curve are known as
A. Non-magnetic materials
 B. Hard magnetic materials
C. Soft magnetic materials
D. Both B and C
5. Which of the following material repels magnetic field lines? C

A. Paramagnetic materials
B. Ferrimagnetic materials
C. Diamagnetic materials
D. Antiferromagnetic materials

6. The susceptibility of ferromagnetic material is --------- C

A.Negative
B.Smalland positive
C. Large and Positive
D. None of above

7. Materials in which magnetization present even after the field has D

been removed are called ___________
A. Diamagnetic
B. Paramagnetic
C. Soft Ferro magnets
D. Hard Ferro magnets

8. ___________ is a measure of the degree to which the field lines A

penetrate or permeate (pass) through the material. It is the ratio
of magnetic induction (B) to the magnetizing field (H).

a) Absolute permeability (μ)

b) Magnetic Susceptibility (𝝌)

c) Relative permeability (μr)

d) none

9. The value of B at H=0 in a Hysteresis curve is called ________ A

A. Remanence/ Retentivity
B. Coercivity
C. Magnetization
D. Porosity

10. The number of magnetic field lines passing per unit area of cross- D
section is called ________

A. Flux
B. Density
C. Magnetic field strength
D. Magnetic flux density/ Magnetic Induction
11. The magnetic field can be produced by ------------ D
A. Using a permanent magnet
B. Electric current
C. Using a Core
D. both A and B

12. The Magnetic Field lines move from _______outside the magnet. A
A. North to south
B. South to north
C. West to east
D. East to west

13. _____________is the process of converting a non-magnetic material B

into a magnetic material.

A. Magnetic induction

B. Magnetization

C. Magnetic field strength/intensity

D. Hysterisis

14. Relation between B and H is given by______ B

a) B = μ /H
b) B = μ H
c) B =H/ μ
d) H = μ B
15. Which of the following equations is correct? B

a) μr = (1-χ)
b) μr = (1+χ)
c) μr+1= χ
d) χ + 1 = μr
16. The magnetic field (H) at which residual magnetism of the material is B
reduced to zero, called as ----------
A. Retentivity
B. Coercivity
C. Magneton
D. Switching off the magnetic field

17.  Which of the following material do not possess atomic magnetic A

dipole moment?

A. Diamagnetic material
B. Paramagnetic material
C. Ferromagnetic material
D. Ferrimagnetic material

18. Which of the following is a weak magnet? D

A. Ferromagnetic material
 B. Ferrimagnetic
C. Hard Ferrite
D. Paramagnetic

19. If a material is paramagnetic, what will be the value of susceptibility B

χ?
A. Negative
B. Small and positive
C. Large and Positive
D. None of above

20. Which of the following is the correct expression for Curie’s law? B
A. χ = Cμ0T
Bχ=C/T
C. μ0 = C χ T
D. μ0 = C χ /T

21. Materials with large area of hysteresis loop are called ________ C

A. Paramagnetic materials
B. Diamagnetic materials
C. Hard magnetic materials
D. Soft magnetic materials

22. _________exhibit negative magnetic susceptibility. B

a) paramagnetic materials
b) Diamagnetic materials
c) ferromagnetic materials
d) ferrimagnetic materials
23. Find the relative permeability of the ferromagnetic material if a A
magnetic field of strength of 220 A/m produces magnetization
of 3300 A/m in it.

A. 16
B. 10

C.41
D. 32

Find the relative permeability of the ferromagnetic

material if a magnetic field of strength of 110 A/m
produces magnetization of 4400 A/m in it.
Option A. English
16
Option B. English
10
Option C. English
41
Option D. English
32
 Answer : C

24 C

The ratio of absolute permeability of the material to the permeability

of the free space is called as__________

a) Magnetic field(H)
b) Magnetic Susceptibility (𝝌)
c) relative permeability (μr)
d) Magnetic Induction (B)
25. In which of the following material, the magnetic moments align B
themselves parallel to each other in each domain without applying
external magnetic field?
A. Paramagnetic material
B. Ferromagnetic material
C. Antiferromagnetic material
D. Diamagnetic material

26. Magnetic induction(B) varies non-linearly with magnetic field B

strength(H) in ___________

A. Paramagnetic material
B. Ferromagnetic material
C. Diamagnetic material
D. None of the above

27.  Antiferromagnetic materials have orientation of neighbouring A

dipoles such that they are

A. Opposite in direction and equal magnitudes

B. Opposite in direction and unequal magnitudes
C. Same direction and unequal magnitudes
D. same direction and equal magnitudes

28. The ratio of magnetization to the magnetic field strength is known as B

   A. Flux density

   B. Susceptibility

   C. Relative permeability
    D. None of the above

29. In Paramagnetic materials, Magnetic susceptibility is C

________temperature

a) independent of
b) directly proportional to
c) inversely proportional to
d) none of above

30. The magnetic field strength in aluminium is 104 A/m. If the magnetic D

susceptibility is  −0.25 × 10−4, calculate the magnetization.

   A) -2.5x 102 A/m

   B) 2.5x 102 A/m

   C)  -2.5 A/m

   D) -0.25 A/m

31. The susceptibility of paramagnetic FeCl3 is 3.7 ×10-3 at 270 C. C

What will be the susceptibility at 200K?
A) 15.5 ×10-3

   B) 18.5 ×10-3

   C) 5.5 ×10-3

   D) 29 ×10-3

32. The magnetic flux density within a bar of some material is 5 Tesla at D
an magnetic field H of 5 X 104 A/m. Compute the magnetic
permeability for this material.

   A) 100 H/m
   B) 10 H/m
   C) 1x104 H/m
   D) 1x10-4 H/m

33. ____________ is a product of pole strength and distance between the B

poles.
a) Magnetic Susceptibility (𝝌)
b) Magnetic dipole moment
c) Magnetic induction(B)
d) Magnetic permeability (μ)
34. Which of the following material has random dipole magnetic C
moments in absence of applied magnetic field?

A. Ferrimagnetic material
B. Antiferromagnetic material
C. Paramagnetic material
D. All of the above

35. The bar magnet has A

   A. Dipole moment

   B. Monopole moment

   C. Both A and B

   D. None of the above

36. The space around a magnet where its magnetic influence is C

experienced is known as ______
a) Magnetic induction

b) Magnetic flux density

c) Magnetic field (H)

d) Monopole moment

37. The magnetic susceptibility of silicon is −0.4 × 10−5. Calculate the C

flux density when magnetic field of intensity 4 × 104 A/m is applied.
(Given μ0 = 4π × 10‒7 H/m)

A. 0.502 Wb/m2
B) 5.02 Wb/m2
C) 0.0502 Wb/m2
D) 5.02 x 102Wb/m2

38. B
In ___________, the magnetization M is directed opposite to the
direction of applied magnetic field
a) paramagnetic materials
b)Diamagnetic materials
c) ferromagnetic materials
d)ferrimagnetic material

39. Susceptibility is positive for C

 A)Non-magnetic substances
B)Diamagnetic substances
C)Ferromagnetic substances
    D)None of the above

40. The magnetic materials exhibit the property of magnetization because D

of

   A. Orbital motion of electrons

   B. Spin of electrons
   C. Temperature
   D. Both A & B

41. In ---------- materials the magnetic moments of the two neighbouring A

atoms are antiparallel to each other and not of equal magnitudes.
A. Ferrimagnetic materials
B. Paramagnetic materials
C. Diamagnetic materials
D. Antiferromagnetic materials

42. The magnetic susceptibility of a paramagnetic material is B

   A. Less than zero

B. Small & positive
   C. Less than one & negative
   D. Equal to zero

43. A
-------------------- is the unit for expressing the magnetic moment of an
electron caused by either of its orbital or spin angular momentum.
A. Bohr Magneton
B.  Planks Constant
C.  Paramagnetic material
D. Curie Law
44. The diamagnetic water is subjected to an external magnetic field of A
105 A/m and gets magnetized to -5 A/m. The susceptibility is found to
be ……..

A. -5x10-5
B. 5x10-5
C. 3x10-5
D. 5x10-3

The magnetic flux density within a bar of some material is 10 Tesla at

an magnetic field H of 500 A/m. Compute the magnetic permeability
for this material.
 A. 0.02 H/m--ans

B. 0.2 H/m

C.2 H/m

D. 20/H/m—

The diamagnetic water is subjected to an external

magnetic field of 100 A/m and gets magnetized to - 5
A/m. The susceptibility is found to be --------
Option A. English
5
Option B. English
0.05
Option C. English
-5
Option D. English
- 0.05

Answer : D

The magnetic field intensity in a piece of a magnetic

material is 500 A/m. If the susceptibility of the material at
room temperature is 0.05, calculate magnetization of
material.

A. 25 A/m

B.  10000 A/m

C.  -25 A/m

D.  -10000 A/m

45. The magnetic field intensity in a piece of a magnetic material is 10 5 A

A/m. If the susceptibility of the material at room temperature is 1.5 X
10 -2, calculate magnetization of material.

A. 1500 A/m
B. 150 A/m
C. 15000 A/m
D. None of above

The magnetic field strength in aluminium is 1000 A/m.

If the magnetic susceptibility is −0.005,calculate the
 magnetization.
Option A. English
-5 A/m
Option B. English
5 A/m
Option C. English
200000 A/m
Option D. English
0.20 A/m

Answer : A

46. The phenomena of spontaneous magnetization occurs in C

A. Paramagnetic material
B. Diamagnetic material
C. Ferromagnetic material
D. None of above
47. Above the curie temperature, ferromagnetic material gets converted B
to --------- material.

A. Diamagnetic
B. Paramagnetic
C. Ferrimagnetic
D. Antiferromagnetic

48. Above the Neel temperature, the material which gets converted to C
paramagnetic is -------------

A. Ferromagnetic
B. Ferrites
C. Antiferromagnetic
D. Diamagnetic

49. Ferrimagnetic materials are ceramic materials which are ---------- A

A. Electrical insulators
B. Electrical conductor
C. Superconductor
D. None of above

50. The materials used in high frequency applications are -------- D

A. Paramagnetic
B. Diamagnetic
C. Ferromagnetic
D. Ferrimagnetic

Unit Question Questions with Options Answer

 Number Key
Unit 4 1 A material that can conduct electricity without resistance is a)
known as a________
Supercondu
ctors a) Superconductor.
b) Conductor
c) Insulator
d) Magnetic material

2 __________is the phenomenon in which electrical resistance of b)

materials suddenly disappears below certain temperature

a) Magnetism
b) Superconductivity
c) Resistivity
d) None of the above

3 The temperature at which a normal material changes into d)

superconductor is called as ________

e) Persistent temperature
f) Curietemperature
g) Neel temperature
h) transition/critical temperature

4 At room temperature, Superconductors are ____conductorsof b)

electric current.

a) Good
b) poor
c) Very good
d) None of the above

5 The susceptibility of a superconductor is d)

a) positive and small

b) positive and unity
c) negative and less than one
d) negative and unity

6 Materials which can display superconductivity are in d)

_______state.

a) Crystalline
b) Polycrystalline
c) Amorphous
d) All of the above
7 A superconductor is characterized by ____electrical resistivity. a)

a) zero
b) infinite
c) high
d)All of the above

8 A steady current, which flows without diminishing in strength, a)

around the loop of superconducting material even after removal
of applied magnetic field, and continues to keep flowing, as
long as the loop is held below the critical temperature is called
as_____
a) Persistent current.
b) Diffusion current
c) Eddy current
d) Hall current

9 Material in superconducting state goes into normal state above b)

------------

a)critical Electric field

b) critical magnetic field
c) critical pressure
d) None of the above
10 Superconducting state depends on______ d)

a) the strength of the magnetic field in which the

materialisplaced
b) An electric current flowing through thematerial
c) Temperature of the material
d) All of the above

11 As the current increases to a critical valueIC, the associated b)

magnetic field _______to HC and the superconductivity
disappears.

a) Decreases
b) Increases
c)Lesser
d) None of the above
12 If a ring of radius R of a superconductor loses its c)
superconductivity at Hc, then critical currentIc is given by

a) Hc/2 π R
b) 2 π R/Hc
c) 2 π RHc
d) 2 π /¿RHc
13 When the temperature of superconductor isincreased, at T = T C b)
 and the material returns to the normal state and the magnetic
flux suddenly_______ the material.

a) vanishesthrough
b) penetratesthrough
c) becomes minimum through
d) disappears through
14 If a superconductor is cooled below the critical temperature in d)
presence of magnetic field, then the magnetic field lines are
pushed out from the interior of the specimen. This phenomenon
in superconductor is known as______

a) suspension effect
b) Silsbee effect
c) Levitation effect.
d) Meissner Effect

15 Meissner effect shows that in the superconductor the value of b)

magnetic induction B is ____

a) 1
b) 0
c) Infinite
d) 2

16 The state in which magnetization (M) cancels the external b)

magnetic field(H) completely is referredto as______
a) perfect paramagnetism
b) perfect diamagnetism
c) perfect ferrimagnetism
d) perfect ferromagnetism
17 If a small chip of superconducting material hangs on to a bigger c)
magnet due toan effect which is known as ______

a)Levitation effect.
b) Meissner Effect
c)suspension effect
d)Silsbee effect
18 A magnet repelled by a superconducting material when floats in a)
the air , this effect is known as _______

a) Levitation effect
b) Meissner Effect
c)suspension effect
d)Silsbee effect
19 London penetration depth is the distance from the surface of the d)
superconductor to a point inside the material at which the
intensity of magnetic field is _____ times the magnetic field at
surface.

a)1/c
b) e
c)1/h
d) 1/e
20 According to London theory, the applied magnetic field b)
strength ______from surface to the center.

a) decreases linearly
b) decreases exponentially
c) Increases linearly
d) Increases exponentially
21 __________is the effective depth to which a magnetic field b)
penetrates the superconductor.

a) Meissner penetration depth

b) London penetration depth
c)Bardeen penetration depth
d) Cooper penetration depth
22 The critical magnetic field at 5 K is 2 ×10 3 A/m in a c)
superconductor ring of radius 0.02 m. Find the value of critical
current.

a) 651.4 A
b) 951.4 A
c) 251.4 A
d) 601.4 A
The critical magnetic field at 3 K is 7000 A/m in a
superconductor ring of radius 0.05 m. Find the value
of critical current
Option A. English
753.6 A
Option B. English
2198 A
Option C. English
6978 A
Option D. English
4198 A

Answer : B

The critical magnetic field at 5 K is 2000 A/m in a

superconductor ring of radius 0.02 m. Find the value
 of critical current.
Option A. English
2512 A
Option B. English
25.12 A
Option C. English
251.2 A
Option D. English
2.512 A

Answer : C

23 The property shown by superconductors is____ d)

a) Zero resistance
b) Critical temperature
c) Persistent current
d) All of the above

24 Critical magnetic field c)

a) does not depend on temperature

b) increases with temperature
c) decreases with increase in temperature
d) does not depend on superconducting transition
temperature

25 The transition temperature for Pb is 7.2 K. However, at 5 K it c)

loses the superconducting property if subjected to magnetic
field of 3.3 × 104A/m. Find the maximum value of H which will
allow the metal to retain its superconductivity at 0 K.

a) 9.37 X104 A/m

b) 11.37 X104 A/m
c) 6.37 X104 A/m
d) 9.79 X104 A/m
26 The critical magnetic field at 30K is 4 X 103 A/m in a a)
superconductor ring of radius 0.03m.Find the value of critical
current

a) 753.6 A
b) 953.6 A
c) 453.6 A
d) 853.6 A
27 The superconductor materials whose superconductivity gets
suddenly destroyed at a critical value of applied magnetic
 field(Hc) are known as a)

a) Type I super conductors

b) Type IIsuperconductors

c) hard Magnetic materials

a) d) Normal conductors

28 Find the critical magnetic field at 40K if the value of critical b)

current is 251.4 A flowing through a superconductor ring of
radius 0.02m.

a) 5001.5923 A/m
b) 2001.5923 A/m
c) 8001.5923 A/m
D) 7001.5923 A/m
29 In type II superconductors, magnetic field lines start entering a)
the material when applied magnetic field is -------

a) between Hc1 and Hc2

b) less than Hc1

c) zero

d) None of above

30 A superconducting material when placed in Magnetic field b)

below critical temperature will

a) Attract the magnetic field towards its centre

b) Repel all magnetic field lines passing through it
c) Attract the magnetic field but transfer it into
concentrated zone
d) Not influence the magnetic field

31 A superconducting material has a critical temperature of 4.9 0K, c)

and a magnetic field of 0.459 Tesla at 00K. Find the critical
field at 30K.

a) 0.78694 A/m
b) 0.98694 A/m
c) 0.28694 A/m
d) 0.78694 A/m

32 Type I superconductors are c)

a) Paramagnetic materials
 b) Hard superconductors
c) Soft superconductors
d) None of the above
33 Type II superconductors are b)

a) Magnetic materials
b) Hard superconductors
c) Soft superconductors
d) None of the above

34 According to London theory, the value of critical magnetic field a)

for superconducting surface, is maximum at

a) 0 K
b) transition temperature
c) room temperature
d) none of these
35 Find the penetration depth of lead at 5.2 0K if the London a)
penetration depth at 0 0Kis 44nm.The Critical temperature of
lead is 7.1930K.

a) 51.6122 nm
b) 81.6122 nm
c) 10.6122 nm
d) 21.6122 nm
36 Critical temperature Tcand Critical Field Hc for superconductor
state is related as
d)
a) Hc(T)= Hc(0) [1 + (T/Tc)2]
b) Hc(T)= Hc(0) [1 + (Tc /T)2]
c) Hc(T)= Hc(0) [1 - (Tc /T)2]
d) Hc(T)= Hc(0) [1 – (T/Tc)2]

37 The critical temperature of mercury is 4.2 0K.Calculate the b)

energy gap in Joules at 00K.(Given: Boltzmann
constant=k=1.38x10-23J/K)

a) 30.40192x10-23J
b) 20.40192x10-23J
c) 40.40192x10-23J
d) 50.40192x10-23J
38 For Hard superconductors which of the following is correct c)
option?

a) High critical field and transition temperature

b) Incomplete Meissner effect
c) Both a and b
 d) None of the above
39 Calculate the critical magnetic field for a wire of lead having a c)
diameter of 1 mm at 4.2 K. The critical temperature for lead is
7.18 K and HC(0) = 6.5 × 104A/m.

a) 8.28x104A/m.
b) 9.28x104A/m.
c) 4.28x104A/m.
d) 14.28x104A/m.
40 According to BCS theory, if the energy gap is more between
ground state and excited state the superconductor will
be____________ b)

a) unstable

b) more stable

c) no change in stability

d) All of the above

41 In case of superconductors, Cooper pairs are formed in the a)

material

a) Below critical temperature as the thermal energy is not

sufficient to disrupt the binding
b) At high temperature as the thermal energy issufficient to
form cooper pair
c) None of these
d) Both (a) and (b)

42 According to BCS theory, Magnetic flux enclosed by b)

superconducting ring is ________

a) of any arbitrary value

b) quantized
c) Both (a) and (b)
d) None of the above
43 A pair of free electrons coupled through a phonon is called a c)
_________

a) phonon pair
b) proton pair
c) Cooper pair
d) None of the above
44 The superconducting materials which lose superconductivity b)
gradually with change in applied critical magnetic field from
Hc1 to Hc2 are known as
 a) Type I
b) Type II
c) Paramagnetic materials
d) None of above
45 The mixed or intermediate state is not present in ________ a)

a) Type I Superconductors
b) Type II Superconductors
c) Both (a) and (b)
d) None of the above
46 Classification of superconductors is based on pattern of a)
transition of superconducting state to normal state on
application of______
a) Hc
b) Tc
c) pressure
c) All of above
47 The energy gap between cooper pair band (lower energy) and b)
normal electron band (of higher energy) is maximum at___

a) T= Tc
b) T=0 K
c) T= Room temperature
d) None of the above
48 Maglev train works on principle of b)

a) Magnetism
b) Magnetic levitation
c) Attraction between two strong magnets
d) All of the above

49 Identify correct statement from the following a)

a) Good conductors of electricity when cooled down below Tc

need not behave as superconductors.
b) Every good conductor when cooled down below Tc is
converted into superconductor.
c) All good conductors of electricity aboveTcare converted into
superconductors.
d) Temperature does not play any role in superconductivity.
 50 The value of critical magnetic field (Hc) is very low in a)

a) Type I superconductors
b) Type II superconductors
c) Both (a) and (b)
d) None of the above
51 A superconducting material has a critical temperature
of 5.5 K, and a magnetic field of 0.559 A/m at 0 K.
Find the critical field at 3 K
Option A. English
0.9877 A/m
Option B. English
0.7887 A/m
Option C. English
0.3927 A/m
Option D. English
0.9927 A/m

Answer : C

Unit Question Questions with Options Answer

Number Key
Unit 5 1 The process of forced photon emission by an excited atom b
LASERS under the influence of external agent is called _________
a) Spontaneous Emission
b) Stimulated Emission
c) Induced absorption
d) amplified Emission
2 The population of various energy levels of a system in thermal a
equilibrium is given by
a) Boltzmann distribution
b) Einstein relation
c) Planks law
d) Beers Law
3 The number of stimulated emission transitions taking place in b
the material medium is proportional to ________

a) the number density of atoms (N1) in the lower state E1

and incident photon density Q
b) the number density of atoms (N2) in the upper state
E2and incident photon density Q
c) the number density of atoms (N1) in the lower state E1
d) the number density of atoms (N2) in the upper state
E2and the number density of atoms (N1) in the lower
state E1
4 Optical resonance cavity is not required in a
a) Ruby laser
b) He-Ne laser
c) Co2 laser
d) Semiconductor laser
5 Laser output is continuous when ________level pumping b
scheme is used
a) Three level
b) Four level
c) Two level
d) Any of the above
6 In He- Ne laser the ratio of He and Ne is : d
a) 1:10
b)1:1
c) 100 : 1
d) 10:1
7 According to Boltzmann distribution law b
ΔE
a) N2/ N1 = exp
kT
−ΔE
b) N2/ N1 = exp
kT
ΔE
c) N2/ N12 = exp
T
−ΔE
d) N2/ N1 = exp
kT
8 Optical pumping is used in: b
a) He- Ne laser
b) Ruby laser
c) semiconductor laser
d) CO2 laser
9 Population inversion is achieved by electric discharge method a
in:
a) He- Ne laser
b) Ruby laser
c) semiconductor laser
d) CO2 laser
10 What is the full form of LASER? c
a) Light Absorbent and Stimulated Emission of Radiations
b) Light Absorbing Solar Energy Resource
c) Light Amplification by Stimulated Emission of Radiation.
d) Light Amplification of Singular Emission of Radiations
11 Which of the following is not a characteristic of LASERS? c
a) Monochromatic
 b) Coherent
c) Highly Divergent
d) Intense
12 Compute the coherence length of yellow light with 5893 Å in b
10-12 sec pulse duration. Also find the band width.

a) lcoh=3 x 10-6 m and Δλ= 13.57 Å

b) lcoh =3 x 10-4 m and Δλ= 11.57 Å
c) lcoh =3 x 10-8 m and Δλ= 15.57 Å
d) None
13 The following graph is pictorial representation of _________ c

a) Spontaneous emission
b) Spontaneous Absorption
c) Stimulated emission
d) Stimulated Absorption
14 White light has frequency range from 0.4 x 1015 Hz to 0.7 x 1015 b
Hz. Find the coherence time.

a) tcoh =3.33 x 10-18 sec.

b) tcoh =3.33 x 10-15 sec.
c) tcoh =3.83 x 10-15 sec.
d) tcoh =3.66 x 10-15 sec.
15 If light of 6600A0 wavelength has wave train 20 λ long, what a
will be its coherence length?
a) 1.32 x 10-5 m
b) 9.32 x 10-5 m
c) 6.32 x 10-5 m
d) 1.32 x 10-10 m

16 He-Ne laser is a b
a) three level laser
b) four level laser
c) two level laser
d) five level laser
17 High energy is required to obtain population inversion c
when____is involved in Lasing action
(a) Excited state
(b) Meta stable state
(c) Ground state
(d) None of the above
18 The reason for narrow tube in He-Ne laser is to a
(a) bring Ne atoms to ground state by collision with tube wall
(b) Increase stimulated emission
(c) there is no effect of narrow tube on He-Ne Laser
(d) atomic collision with tube wall constant
19 The active centres in He-Ne laser is b
(a) He
(b) Ne
(c) He-Ne
(d) All are correct
20 The role of He in He-Ne laser is d
(a) He is an active medium
(b) population inversion takes place in He
(c) Stimulated emission takes place in He
(d) to excite Ne atoms by colliding with it
21 Metastable state has life time approximately------------ a
(a) 10−3 s to 10−6 s
(b) 10−8 s to 10−12 s
(c) 10−10 s to 10−14 s
(d) 10−12 s to 10−15 s
22 An excited state(except metastable state)has life time about b
(a) 10−3 s
(b) 10−8 s
(c) 10−15 s
(d) 10−20 s
23 Population inversion in laser means b
(a) number of atoms in ground state are more than number of
atoms in excited state
(b) number of atoms in ground state are less than number of
atoms in excited state
(c) number of atoms in ground state is equal to number of atoms
in excited state
(d) none
24 A typical He-Ne Laser emits radiation of wavelength 6328 Å. B
How many photons per second would be emitted by one milli -
Watt He-Ne Laser?
a) N =9.18x 1015/sec
b) N =3.18x 1015/sec
c) N =1.18x 1015/sec
d) N =1.08x 1015/sec
Calculate number of photons emitted per second by
3mW laser if the energy of each emitted photon is
2.865 X 10^-19 J.
Option A. English
0.1047 X 10^16
Option B. English
104.7 X 10^16
Option C. English
10.47 X 10^16
 Option D. English
1.047 X 10^16

Answer : D

25 Example of solid state laser is C

(a) He-Ne Laser
(b) 𝐶𝑂2 Laser
(c) Ruby Laser
(d) Dye Laser
26 2 laser is 60 MHz, calculate the coherence A

If the half-width of a CO
length of the laser.

a) 5m
b)10 m
c) 15
d) 20m
27 The number of stimulated / Induced absorption transitions B
taking place in the material medium is proportional to

a) the number density of atoms (N2) in the upper state E2

b) the number density of atoms (N1) in the lower state E1
and incident photon density Q
c) the number density of atoms (N2) in the upper state E2
and the incident photon density Q
d) the number density of atoms (N1) in the lower state E1
and the number density of atoms (N2) in the upper state
E2

28 Ruby laser is a ___________ level laser. A

a) Three
b) Four
c) Five
d) Two
29 The process of supplying energy to the medium to achieve the b
state of population inversion is known as ------

a) stimulated or induced absorption

b) pumping
c) spontaneous emission
d) stimulated emission
30 What is the output in wavelength of Helium-Neon laser? B
a) 6943 Å
b) 6328 Å
c) 5400 Å
d) 8000 Å
31 What is the output in wavelength of Ruby laser? A
 a) 6943 Å
b) 6328 Å
c) 5400 Å
d) 8000 Å
32 The characteristics of Laser are D
a) Monochromaticity
b) Coherence
c) high directionality
d) all of the above
33 In ruby Laser which ions give rise to laser action? B
a)Al2O3
b) Cr 3+
c) Al3+
d) O-

34 The material in which the population inversion is achieved is A

called as
a) Active medium
b) metastable state
c) passive medium
d) stable states
35 Output of Ruby laser is C
a) Continuous
b) polychromatic
c) pulsating
d) All of the above
36 Output of the He – Ne laser is A
a) Continuous
b) polychromatic
c) pulsating
d) All of the above
37 Role of optical resonance cavity is to________ . D
a) Impart monochromaticity
b) Impart high collimation
c) Increase intensity
d) All of the above

Role of optical resonance cavity is to________

Option A. English
Impart divergence
Option B. English
Impart low collimation
Option C. English
Convert active medium into an Light oscillator &
hence into a light generator.
Option D. English
 All of the above
Answer : C

38 A negative temperature state is referred to as a state of A

(a) Population inversion
(b) Pumping
(c) Excitation
(d) None.
39 The requirements for getting a LASER are d
(a) Population inversion,
(b) Resonance cavity
(c) High power pumping
(d) All of the above
40 The de-excitation of Ne-atoms to the ground state by collision A
with tube wall in He-Ne laser can be achieved by
(a) reducing wall diameter
(b) increasing wall diameter
(c) maintaining He-Ne at different pressures
(d) Spontaneous emission
41 Incoherent light is due to B
(a) stimulated emission
(b) spontaneous emission
(c) stimulated Absorption
(d) pumping
42 Compute the coherence length of light with wavelength 6328Å B
in 10-9 sec pulse duration.
a) 0.2 m
b) 0.3 m
c) 0.4 m
d) 0.5 m
43 The light from a laser source is monochromatic because all the A
photons
a) have same wavelength
b) are in phase
c) have same amplitude
d) are in the same direction
44 Calculate the population ratio of two states in a laser that A
produces light of wavelength 7000Å at 270 C.
a) N2/N1 =1.6046 x 10-30
b) N2/N1 =7.6042 x 10-30
c) N2/N1 =10.6042 x 10-30
d) N2/N1 =9.6042 x 10-30
45 If coherence length increases __________ increases. B
a) Spatial coherence
b) Temporal Coherence
c) Divergence
d) Intensity
 46 Optical cavity resonator consists of a hollow tube fitted with C
two end mirrors and _____side walls.
a) Opaque
b) Wooden
c) transparent
d) pumping
47 Laser light is intense because c
a) it has very less number of Photons that in phase
b)it has very less number of Photons that are not in phase
c) it has very large number of Photons that are in phase
d) it has very large number of Photons that are not in phase
48 When two or more waves are in phase with each other at a fixed A
point in the space at different time intervals is known as_____
a) Temporal coherence
b) Spatial coherence
(c) None of the above
d) both a) and b)
49 When two or more waves are in phase with each other at B
different points in the space at a fixed time interval is known
as_____
a) Temporal coherence
b) Spatial coherence
c) None of the above
d) none of these.
50 __________means the coordinated motion of several waves A
maintaining a fixed and predictable phase relationship with
each other.
a) Coherence
b) Divergence
c) Monochromaticity
d) directionality
Units Question Questions with Options Answer
Number Key
Unit VI 1 Which of the following method is an example of Top- down
Nanoscience approach? b)
and a) Sol gel method
Nanomaterial b) Ball Mill method
s c) Both a and b
d) None of these

2 Properties of Nanomaterials and bulk materials are drastically____

a) Same b)
b) Different
c) Both (a) and (b)
d) None of these
3 Which of the following method is an example of Bottom up (a)
approach?
a) Sol gel method
b) Ball Mill method
c) Both a and b
 d) None of these
4 Sol gel method is a -------------process for preparation of (a)
nanomaterials .
a) Chemical synthesis
b) Physical synthesis
c)Pulsed laser
d)Microwave irradiation
5 Nanomaterials are classified on the basis of ------ (b)
a) range
b) number of dimensions
c) material
d) nature of material
6 Starting material in sol gel method is called ________. (a)
a) sol
b) gel
c) sol gel
d) colloidal suspension
7 In sol gel method, suspension in the colloidal solution that keeps its (b)
shape is called _______.
a) sol
b) gel
c) sol gel
d) Colloidal
8 In sol gel method, precursor is activated by addition of ----------- (c)
a) Acid
b) Base
c) Both (a) and (b)
d) self activated
9 What’s the order of size in nanomaterials? (c)
a) 10-1m
b)10-7m
c) 10-9m
d) 10-8m
10 The framework of zeolite have -------------- structure. (c)
a) octahedral
b) polyhedral
c) tetrahedral
d) none of above
11 Drastic changes in properties of nanomaterials compared to (d)
bulk materials are due to_____
a) Increase in surface area to volume ratio
b) Quantum confinement
c) Decrease in surface to volume ratio
d) Both (a) and (b)

12 In nano materials separation between allowed energy levels is (d)

__________
a) Same as that of isolated atom
b) Greater than that of isolated atom
 c) Same as that in solids
d) Intermediate between isolated atom and solids
13 Graphene is a ---------------- layer of carbon atoms densely (c)
packed into benzene ring structure.
a) double
b) Triple
c) Single
d) None of above
14 Perfect graphene consists of ……….cells. (b)
a) Tetragonal
b) Hexagonal
c)Pentagonal
d) Octagonal
15 Optical properties and electronic properties are mainly altered (a)
due to-
a) Quantum confinement
b) Zeolite
c) Catalysation
d) All of these
16 __________is an example of three dimensional (a)
nanomaterials.
a) Polycrystalline
b) Nanowire
c) Quantum dots
d) Nanorod
17 The crystalline solids having micropores in it and the structure (b)
is well defined are called as__________.
a) Graphene
b) Zeolite
c) Quantum
d) Zinotic
18 Nanoscale materials have_____ surface to volume ratio (b)
making them ideal.
a) Very low
b) Very high
c) Constant
d) Lowest
19 Due to increased surface area at nanoscale____
a) Interatomic distance changes a)
b) Interatomic distance remains unchanged
c) Interatomic distance changes occasionally
d) None of these
20 Which method is used for synthesis of nanomaterials? (d)
a) Bottom- up approach
b) Top- down approach
c) Bottom top approach
d) Both a and b
21 In ball mill method the cylinder rotates around which axis? (b)
a) vertical axis
b) horizontal axis
c) frontal axis
d) transverse axis
22 Ball mill is used for _________. (c)
a) crushing
b) coarse grinding
c) fine grinding
d) attrition
23 Lighter and stronger materials are useful in manufacturing (d)
_____________
a) Aircraft
b) Computer
c) T.V.
d) All of The Above
24 Macroscopic and microscopic properties can be varied at the (a)
nanoscale of the material without changing
___________composition
a) Chemical
b) Physical
c) Both
d) None

25 Due to nanotechnology electronic circuit can be_______ and (b)

________.
a) Smaller and slower
b) Smaller and faster
c) Larger and faster
d) Larger and slower
26 When a material is reduced to nanoscale the following change is (c)
observed in its magnetic properties.
a) Only one domain is formed in ferromagnetic materials
b) Lowering of magnetic Coercivity
c)Both a & b
d)None of these
27 Which of the following are examples of one dimensional (d)
nanomaterials?
a) Nanowire
b) Nanotubes
c) Nanosheet
d)both a and b
28 Advantage of sol gel is very ________production cost. (c)
a) High
b) Medium
c) Low
d) None
29 Zeolite are crystalline solids having ------------- in it and its (b)
structure is well defined.
a) microparticles
b) micropores
c) nanoparticles
d) none of above
30 In conducting materials, as the size of the material reduces its (b)
------------
a) conductivity decreases
b) conductivity increases
c) crystal defects increases
d) impurity in the crystal increases
31 Which of the following sentence is true? (a)
a) Physical state changes at nanoscale for some metals
b) Physical state can’t be changed at nanoscale for any
material
c) Transition temperature remain same for all nanomaterials
d) Mechanical properties of nanomaterials are same as that of
bulk materials
32 Which of the following process is used in sol gel method? (d)
a) Gelation
b) Precipitation
c)Hydrothermal
d) All of the above
33 What is the structure of Zeolite? (b)
a) Non-porous
b) Porous
c) Rigid
d) none of the above
34 The only difference between colloidal and polymeric sol gel (c)
method is___________.
a) Use of different precursor
b) Use of different starting material
c) Both (a) and (b)
d) None of above
35 In nanomaterials ,due to Quantum confinement effect,
energy gap ------- a)
a) Increases compared to solids
b) decreases compared to solids
c) does not change
d) none of above

36 Chemical reactivity of nanomaterials _______compared to (a)

bulk materials
a) Increases
b) decreases
c) Remain unchanged
 d) None of the above
37 When semiconductors are reduced to nanomaterials they (b)
become ________.
a) Pure conductors
b) Insulators
c) Poor conductors
d) Semiconductors
38 Which factor makes nanomaterial ideal for chemical energy (a)
storage, reacting system, etc.?
a) High surface area to volume ratio
b) Low surface area to volume ratio
c) Their large structure
d) None of these
39 Change in melting point of material as it reduces from bulk to
nano-size is due to
a) large surface to volume ratio
b) Quantum confinement
c) low pressure
d) low temperature a)
40 The change in electron energy levels due to very small particle (a)
size which is of the order of an electron wavelength is known
as___
a) Quantum confinement
b) Intermediate confinement
c) Macroparticles confinement
d) None of above
41 Nanomaterials are used in which of the following fields (d)
a) Textile
b) Optics
c) Electronics
d) All of these
42 Use of nanomaterials in the field of computers ______the (a)
storage density of Hard disk .
a) Increases
b) Decreases
c) Reamains same
d) none of above
43 In ball mill method when cylinder rotates ---------- force is (b)
produced
a) Centripetal
b) Centrifugal
c) Frictional
d) Magnetic
44 Which of the following properties are altered at nanoscale? (d)
a) Electrical
b) Mechanical
c) Optical
 d) All of the above
45 Which of the following is a good example of zero -dimensional (d)
nano materials?
a) Quantum dots
b) Fullerenes
c) Nanosphere
d) All of these
46 What is/are the advantages of sol gel method? (d)
a) Produces ultra high purity material
b) Very low production cost
c) Low temperature for processing
d) All of the above
47 What is the property of Graphene? (d)
a) Chemically less reactive
b) Electrical conductivity Is low
c) Its very soft
d) It is perfect thermal Conductor.
48 What are the major applications of zeolite? (d)
a) Petrochemical cracking
b) Separation of gases and solvents
c) Softening and purification
d) All of the above

49 Which of the following is the property of zeolite? (c)

a) Chemical most reactive thermal
b) Conductor Perfect
c) Catalysis
d) None of the above
50 When material is reduced to the nanoscale, no. of atoms (a)
available on the surface area/unit volume____
a) Increases
b) Decreases
c) Both a and b
d) None of the above