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Electronic Devices & Circuits: UNIT-4

This document discusses field effect transistors (FETs). It describes FETs as unipolar devices that are voltage-controlled. It outlines some advantages of FETs over bipolar junction transistors (BJTs), such as only using majority carriers, having high input impedance, and better thermal stability. The document then discusses n-channel junction FET (JFET) construction, operation, and characteristics including drain and transfer characteristics. Finally, it provides a brief introduction to metal-oxide-semiconductor FETs (MOSFETs) and describes enhancement-only n-channel MOSFET construction.

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0fficial Sidhartha
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39 views

Electronic Devices & Circuits: UNIT-4

This document discusses field effect transistors (FETs). It describes FETs as unipolar devices that are voltage-controlled. It outlines some advantages of FETs over bipolar junction transistors (BJTs), such as only using majority carriers, having high input impedance, and better thermal stability. The document then discusses n-channel junction FET (JFET) construction, operation, and characteristics including drain and transfer characteristics. Finally, it provides a brief introduction to metal-oxide-semiconductor FETs (MOSFETs) and describes enhancement-only n-channel MOSFET construction.

Uploaded by

0fficial Sidhartha
Copyright
© © All Rights Reserved
Available Formats
Download as PDF, TXT or read online on Scribd
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Electronic devices &

circuits
UNIT-4

Field Effect Transistor


Prepared By:
Dr. Manu Gupta
(ECM Deptt.)
Field Effect Transistor

 FET is a unipolar Device.


 FET is a voltage controlled Device.
 Current conduction is either by
holes or by electrons.

2
Advantages FET over BJT
1.Its operation depends on the flow of majority charge
carriers only. Hence it is a unipolar device
2.It has high input impedance.
3.It has better thermal stability.
4. In IC form it is easy to fabricate rather than BJT.

Disadvantage : Relatively small gain band width


product.

3
FET

4
An n-type channel is formed between
two p-type layers which are connected to
the gate. Majority carrier electrons flow
from the source and exit the drain, forming
the drain current.
5
JFET CONSTRUCTION(nchannel)
 JFET Consists of four terminals.
They are source ,Drain ,Gate &
channel.
 Source : Source is the terminal
through which majority charge
carriers enters in to the bar.
 It is analogous to emitter in BJT.
 Drain: Drain is the terminal
through which majority carriers
leaves the channel. Drain is more
positive with respect to the
channel.
 It is analogous to collector in JFET.

6
JFET CONSTRUCTION(nchannel)
 Gate : Gate is a control
electrode. It is of opposite
polarity with respect to source
and drain. Two heavily doped
‘p’ regions are diffused in to n
channel top and bottom layers.
 These two p regions together
is called as gate.
 Channel : The region of n-type
material between two gate
regions is channel through
which majority carriers move
from source to drain.
7
8
JFET Operation(nchannel)
 Case- I(When VDD is applied and Vgg is
Zero )
 In FET electrons will from source to drain
resulting drain current ID.

 Here maximum drain current flows and it


is equal to IDSS
9
10
JFET Operation(nchannel)
 Case-II (When VDD and Vgg are applied)
 When Gate Junction is Reverse Biased FET will act
like a two Reverse Biased Diodes Connected Back to
Back.
 And Hence two Depletion Regions will form in the
Channel.Two depletion Regions are widened.
 Constriction is more towards drain terminal rather than
source.
 This Reduces the Channel width hence drain current ID
Decreases.

11
JFET Operation(nchannel)

 When gate to source voltage is further increased a


stage is reached at which both the depletion regions
will meet together.

 The region of the characteristic in which drain current


ID remains fairly constant is called the pinch-off
region.

12
JFET characteristics

FET characteristics are of two types


 1.Drain characteristics
 2. Transfer characteristics

13
n channel JFET Drain characteristics

14
N channel JFET Transfer Characteristics.

Trans conductance
 Trans conductance
can be calculated
from the slope of the
transfer
characteristic.
 It is Denoted as

 Its unit is mho.


Expression for saturation current
Expression for saturation current
MOSFET-Introduction

MOSFET stands for Metal Oxide Semiconductor Field Effect Transistor.


This is also called as IGFET meaning Insulated Gate Field Effect
Transistor. The FET is operated in both depletion and enhancement
modes of operation.
n-Channel Enhancement only MOSFET
Construction
Enhancement
MOSFET
Depletion Enhancement MOSFET (DE-MOSFET)
22
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