4V Drive Pch MOSFET

RRH090P03

Structure Dimensions (Unit : mm)

Silicon P-channel MOSFET SOP8

Features
1) Low on-resistance.
2) Built-in G-S Protection Diode.
3) Small Surface Mount Package (SOP8).

Application Each lead has same dimensions

Switching

Packaging specifications Inner circuit

(8) (7) (6) (5)
Package Taping
Type Code TB
Basic ordering unit (pieces) 2500
RRH090P03
∗2

(1) Source
∗1 (2) Source
(3) Source
(4) Gate
(5) Drain
(1) (2) (3) (4)
(6 )Drain
∗1 ESD PROTECTION DIODE (7) Drain
∗2 BODY DIODE (8) Drain

Absolute maximum ratings (Ta = 25C)

Parameter Symbol Limits Unit
Drain-source voltage VDSS −30 V
Gate-source voltage VGSS ±20 V
Continuous ID ±9 A
Drain current ∗1
Pulsed IDP ±36 A

Source current Continuous Is −1.6 A

(Body Diode) ∗1
Pulsed Isp −36 A
∗2
Total power dissipation PD 2.0 W
Channel temperature Tch 150 °C
Range of storage temperature Tstg −55 to +150 °C
∗1 Pw≤10μs, Duty cycle≤1%
∗2 Mounted on a ceramic board.

Thermal resistance
Parameter Symbol Limits Unit
Channel to Ambient Rth (ch-a)∗ 62.5 °C / W
∗ Mounted on a ceramic board.

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○ 1/5 2010.01 - Rev.A
RRH090P03 Data Sheet

Electrical characteristics (Ta = 25C)

Parameter Symbol Min. Typ. Max. Unit Test Conditions
Gate-source leakage IGSS − − ±10 μA VGS=±20V, VDS=0V
Drain-source breakdown voltage V (BR)DSS −30 − − V ID=−1mA, VGS=0V
Zero gate voltage drain current IDSS − − −1 μA VDS=−30V, VGS=0V
Gate threshold voltage VGS (th) −1.0 − −2.5 V VDS=−10V, ID=−1mA
− 11.0 15.4 ID=−9A, VGS=−10V
Static drain-source on-state
resistance RDS (on)∗ − 15.0 21.0 mΩ ID=−4.5A, VGS=−4.5V
− 17.0 24.0 ID=−4.5A, VGS=−4.0V
Forward transfer admittance l Yfs l ∗ 10 − − S ID=−9A, VDS=−10V
Input capacitance Ciss − 3000 − pF VDS=−10V
Output capacitance Coss − 360 − pF VGS=0V
Reverse transfer capacitance Crss − 360 − pF f=1MHz
Turn-on delay time td(on) ∗ − 20 − ns ID=−4.5A, VDD −15V

Rise time tr ∗ − 30 − ns VGS=−10V

Turn-off delay time td(off) ∗ − 135 − ns RL=3.3Ω
Fall time tf ∗ − 80 − ns RG=10Ω
Total gate charge Qg ∗ − 30 − nC ID=−9A, VDD −15V
∗ VGS=−5V
Gate-source charge Qgs − 7 − nC
RL=1.7Ω
Gate-drain charge Qgd ∗ − 11 − nC RG=10Ω
∗Pulsed

Body diode characteristics (Source-Drain) (Ta = 25C)

Parameter Symbol Min. Typ. Max. Unit Test Conditions
Forward Voltage VSD ∗ − − −1.2 V Is=−9A, VGS=0V
∗Pulsed

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c 2010 ROHM Co., Ltd. All rights reserved.
○ 2/5 2010.01 - Rev.A
RRH090P03 Data Sheet

Electrical characteristic curves

20 20 100
T a=25C Ta=25C VDS= -10V
V GS= -10V
18 Pulsed 18 Pulsed
Pulsed
VGS= -4.5V
16 16

DRAIN CURRENT : -ID [A]

VGS= -3.4V
DRAIN CURRENT -ID [A]

DRAIN CURRENT -ID [A]

V GS= -4.5V 10
14 14 VGS= -3.2V
Ta= 125C
12 12 Ta= 75C
VGS= -2.8V
10 1 Ta= 25C
10 V GS= -4.0V
Ta= - 25C
8 V GS= -3.6V 8
V GS= -3.4V
6 V GS= -3.2V 6
0.1
4 4
V GS= -2.8V
2 VGS= -2.4V
2 V GS= -2.4V

0 0 0.01
0.0 0.2 0.4 0.6 0.8 1.0 0 2 4 6 8 10 1.0 1.5 2.0 2.5 3.0

DRAIN-SOURCE VOLTAGE -VDS[V] DRAIN-SOURCE VOLTAGE -VDS[V] GATE-SOURCE VOLTAGE : -VGS [V]

Fig.1 Typical output characteristics(Ⅰ) Fig.2 Typical output characteristics(Ⅱ) Fig.3 Typical Transfer Characteristics

100 100 100

Ta=25C V GS= -10V VGS= -4.5V
Pulsed Pulsed Pulsed
STATIC DRAIN-SOURCE ON-STATE

STATIC DRAIN-SOURCE ON-STATE

STATIC DRAIN-SOURCE ON-STATE

RESISTANCE:RDS(on) [mΩ]

RESISTANCE:RDS(on) [mΩ]
RESISTANCE:RDS(on) [mΩ]

10 10 10
Ta=125C
VGS= -4.0V
. VGS= -4.5V Ta=75C
T a=125C
VGS= -10V Ta=25C
T a=75C
Ta= -25C
T a=25C
T a= -25C

1 1 1
0.1 1 10 0.1 1 10 0.1 1 10
DRAIN CURRENT : -ID [A] DRAIN CURRENT : -ID [A] DRAIN CURRENT : -ID [A]

Fig.4 Static Drain-Source On-State Fig.5 Static Drain-Source On-State Fig.6 Static Drain-Source On-State
Resistance vs. Drain Current(  ) Resistance vs. Drain Current(   ) Resistance vs. Drain Current(    )

100 100 100

VGS= -4.0V VDS= -10V VGS=0V
REVERSE DRAIN CURRENT : -Is [A]

Pulsed Pulsed Pulsed

STATIC DRAIN-SOURCE ON-STATE

Ta=125C
FORWARD TRANSFER

10
ADMITTANCE : |Yfs| [S]
RESISTANCE RDS(on) [mΩ]

10 Ta=75C
Ta=25C
Ta=-25C
10 1
Ta=125C
Ta=75C Ta= -25C
Ta=25C 1 Ta=25C
Ta= -25C Ta=75C 0.1
Ta=125C

0 0.01
1
0.1 1 10 0.0 0.2 0.4 0.6 0.8 1.0 1.2
0.1 1 10
SOURCE-DRAIN VOLTAGE : -VSD [V]
DRAIN CURRENT : -ID [A] DRAIN CURRENT : -I D [A]
Fig.7 Static Drain-Source On-State Fig.8 Forward Transfer Admittance Fig.9 Reverse Drain Current
Resistance vs. Drain Current(  V) vs. Drain Current vs. Sourse-Drain Voltage

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○ 3/5 2010.01 - Rev.A
RRH090P03 Data Sheet

100 10000 10
Ta=25C T a=25C Ta=25C

GATE-SOURCE VOLTAGE : -VGS [V]

STATIC DRAIN-SOURCE ON-STATE

Pulsed V DD = -15V V DD = -15V

td(off)
8 ID = -9.0A
RESISTANCE : RDS(on) [mΩ]

tf V GS=-10V
1000

Switching Time : t [ns]

RG=10Ω RG=10Ω
Pulsed Pulsed
ID = -9.0A
6

50 100
ID = -4.5A 4

10
2
td(on) tr

0 1 0
0 5 10 15 0.01 0.1 1 10 0 10 20 30 40 50

GATE-SOURCE VOLTAGE : -VGS [V] Drain Current : -ID [A] TOTAL GATE CHARGE : Qg [nC]

Fig.10 Static Drain-Source On-State Fig.11 Switching　Characteristics Fig.12 Dynamic Input Characteristics
Resistance vs. Gate Source Voltage

10000 1000
Operation in this area is limited by RDS(ON)
(V GS=-10V)
100
CAPACITANCE : C [pF]

DRAIN CURRENT : -ID (A)

P W =100us
Ciss
1000
10
P W =1ms

Crss
1
Coss P W = 10ms
100

T a=25℃ 0.1 Ta = 25℃

f=1MHz Single Pulse
DC operation
V GS=0V MOUNTED　ON　CERAMIC BOARD

10 0.01
0.01 0.1 1 10 100 0.1 1 10 100
DRAIN－SOURCE VOLTAGE : -VDS ( V )
DRAIN-SOURCE VOLTAGE : -VDS [V]

Fig.13 Typical Capacitance Fig.14 Maximum Safe Operating Aera

vs. Drain-Source Voltage
NORMARIZED TRANSIENT THERMAL

10
RESISTANCE : r (t)

0.1
Ta = 25℃
Single Pulse : 1Unit
0.01 Rth（ch-a）（t） = ｒ（t）×Rth（ch-a）
Rth（ch-a） = 62.5 ℃/W
<Mounted on a CERAMIC board>
0.001
0.001 0.01 0.1 1 10 100 1000
PULSE WIDTH : Pw(s)

Fig.15 Normalized Transient Thermal Resistance vs. Pulse Width

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○ 4/5 2010.01 - Rev.A
RRH090P03 Data Sheet

Measurement circuit

VGS ID Pulse Width

VDS
VGS 10%
RL 50% 90% 50%
D.U.T.

RG 10% 10%
VDD
90% 90%
VDS
td(on) tr td(off) tf

ton toff
Fig.1-1 Switching Time Measurement Circuit
Fig.1-2 Switching Waveforms

VG
VGS ID
VDS Qg
RL
VGS
IG(Const.) D.U.T.
Qgs Qgd
RG
VDD

Charge

Fig.2-1 Gate Charge Measurement Circuit Fig.2-2 Gate Charge Waveform

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○ 5/5 2010.01 - Rev.A
 Notice

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