NJ2N60 POWER MOSFET

2.0A 600V N-CHANNEL POWER MOSFET

DESCRIPTION
The NJ2N60 is a high voltage power MOSFET and is
designed to have better characteristics, such as fast switching time,
1
low gate charge, low on-state resistance and have a high rugged
TO-220
avalanche characteristics. This power MOSFET is usually used at
high speed switching applications in power supplies, PWM motor
controls, high efficient DC to DC converters and bridge circuits.

1
FEATURES
TO-220F
* RDS(ON) = 5 @VGS = 10V
* Ultra Low gate charge (typical 9.0nC)
* Low reverse transfer capacitance (CRSS = typical 5.0 pF)
* Fast switching capability 1
* Avalanche energy specified
* Improved dv/dt capability, high ruggedness TO-251

SYMBOL 1

TO-252

„ ORDERING INFORMATION
Pin Assignment
Ordering Number Package Packing
1 2 3
NJ2N60-LI TO-220 G D S Tape Box
NJ2N60-BL TO-220 G D S Bulk
NJ2N60F-LI TO-220F G D S Tube
NJ2N60A-LI TO-251 G D S Tube
NJ2N60D-TR TO-252 G D S Tape Ree
NJ2N60D-LI TO-252 G D S Tube

Note: Pin Assignment: G: Gate D: Drain S: Source

NJ2N60 POWER MOSFET
ABSOLUTE MAXIMUM RATINGS (TC = 25° , unless otherwise specified)
PARAMETER SYMBOL RATINGS UNIT
Drain-Source Voltage VDSS 600 V
Gate-Source Voltage VGSS ±30 V
Avalanche Current (Note 2) IAR 2.0 A
Continuous ID 2.0 A
Drain Current
Pulsed (Note 2) IDM 8.0 A
Single Pulsed 2N60 140 mJ
EAS
Avalanche Energy (Note 3)
Repetitive (Note 2) EAR 4.5 mJ
Peak Diode Recovery dv/dt (Note 4) dv/dt 4.5 V/ns
TO-220 54 W
TO-220F 22 W
TO-251 PD 40 W
Power Dissipation
TO-252 TC = 25°

Junction Temperature TJ +150 °

Operating Temperature TOPR -55 ~ +150 °
Storage Temperature TSTG -55 ~ +150 °
Notes: 1. Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
2. Repetitive Rating : Pulse width limited by TJ
3. L=64mH, IAS=2.0A, VDD=50V, RG=25 , Starting T J = 25°C
4. ISD 2.4A, di/dt 200A/ s, VDD BVDSS, Starting TJ = 25°C
THERMAL DATA
PARAMETER PACKAGE SYMBOL RATINGS UNIT
TO-220 62.5 ° /W
TO-220F 62.5 ° /W
TO-251
Junction to Ambient JA 100 ° /W
TO-252

TO-220 2.32 ° /W
TO-220F 5.5 ° /W
TO-251
Junction to Case Jc 2.87 ° /W
TO-252
NJ2N60 POWER MOSFET
ELECTRICAL CHARACTERISTICS (TJ =25° , unless otherwise specified)
PARAMETER SYMBOL TEST CONDITIONS MIN TYP MAX UNIT
OFF CHARACTERISTICS
Drain-Source Breakdown Voltage BVDSS VGS = 0V, ID = 250 A 600 V
Drain-Source Leakage Current IDSS VDS = 600V, VGS = 0V 10 A
Forward VGS = 30V, VDS = 0V 100 nA
Gate-Source Leakage Current IGSS
Reverse VGS = -30V, VDS = 0V -100 nA
Breakdown Voltage Temperature Coefficient BVDSS/ TJ ID=250 A, Referenced to 25°C 0.4 V/°
ON CHARACTERISTICS
Gate Threshold Voltage V GS(TH) V DS = VGS, ID = 250 A 2.0 4.0 V
Static Drain-Source On-State 2N60 3.6 5
RDS(ON) VGS = 10V, ID =1A
Resistance
DYNAMIC CHARACTERISTICS
Input Capacitance CISS 270 350 pF
VDS =25V, VGS =0V,
Output Capacitance COSS 40 50 pF
f =1MHz
Reverse Transfer Capacitance CRSS 5 7 pF
SWITCHING CHARACTERISTICS
Turn-On Delay Time tD (ON) 10 30 ns
2N60 40 60 ns
Turn-On Rise Time tR
VDD =300V, ID =2.4A,
Turn-Off Delay Time tD(OFF) RG=25 (Note 1, 2) 20 50 ns
2N60 50 60 ns
Turn-Off Fall Time tF

Total Gate Charge QG 9.0 11 nC

VDS=480V, VGS=10V,
Gate-Source Charge QGS 1.6 nC
ID=2.4A (Note 1, 2)
Gate-Drain Charge QGD 4.3 nC
DRAIN-SOURCE DIODE CHARACTERISTICS
Drain-Source Diode Forward Voltage VSD VGS = 0 V, ISD = 2.0 A 1.4 V
Continuous Drain-Source Current ISD 2.0 A
Pulsed Drain-Source Current ISM 8.0 A
Reverse Recovery Time trr VGS = 0 V, ISD = 2.4A, 180 ns
Reverse Recovery Charge Q RR di/dt = 100 A/ s (Note 1) 0.72 C
Notes: 1. Pulse Test: Pulse width 300 s, Duty cycle 2%
2. Essentially independent of operating temperature
NJ2N60 POWER MOSFET
TEST CIRCUITS AND WAVEFORMS

D.U.T. +

VDS

- L

RG
Driver VDD
* dv/dt controlled by RG
Same Type * ISD controlled by pulse period
VGS as D.U.T. * D.U.T.-Device Under Test

Peak Diode Recovery dv/dt Test Circuit

VGS Period P. W.
D=
(Driver) P.W. Period

VGS = 10V

IFM, Body Diode Forward Current

ISD
(D.U.T.)
di/dt

IRM

Body Diode Reverse Current

Body Diode Recovery dv/dt

VDS
(D.U.T.) VDD

Body Diode Forward Voltage Drop

Peak Diode Recovery dv/dt Waveforms

NJ2N60 POWER MOSFET
TEST CIRCUITS AND WAVEFORMS (Cont.)

VDS
90%

10%
VGS
t D(ON) tD(OFF)
tR tF

Switching Test Circuit Switching Waveforms

VGS

QG
10V

QGS QGD

Charge

Gate Charge Test Circuit Gate Charge Waveform

BVDSS
IAS

ID(t)
VDS(t)
VDD

tp Time

Unclamped Inductive Switching Test Circuit Unclamped Inductive Switching Waveforms

NJ2N60 POWER MOSFET
TYPICAL CHARACTERISTICS
Drain Current vs. Drain-Source
Drain Current vs. Gate Threshold Voltage
Breakdown Voltage
300 300

250 250

200 200

150 150

100 100

50 50

0 0
0 200 400 600 800 1000 0 0.5 1 1.5 2 2.5 3 3.5 4
Drain-Source Breakdown Voltage, BVDSS (V) Gate Threshold Voltage, V TH (V)