AP40N03GP

RoHS-compliant Product
Advanced Power N-CHANNEL ENHANCEMENT MODE
Electronics Corp. POWER MOSFET

▼ Low Gate Charge BVDSS 30V

▼ Simple Drive Requirement RDS(ON) 17mΩ
▼ Fast Switching Characteristic ID 40A
G
D TO-220
S
Description D

Advanced Power MOSFETs from APEC provide the

designer with the best combination of fast switching,
ruggedized device design, low on-resistance and cost-effectiveness. G
S
The TO-220 package is widely preferred for all commercial-industrial
applications and suited for low voltage applications such as DC/DC
converters and high efficiency switching circuits.

Absolute Maximum Ratings

Symbol Parameter Rating Units
VDS Drain-Source Voltage 30 V
VGS Gate-Source Voltage +20 V
ID@TC=25℃ Continuous Drain Current, VGS @ 10V 40 A
ID@TC=100℃ Continuous Drain Current, VGS @ 10V 30 A
IDM Pulsed Drain Current1 169 A
PD@TC=25℃ Total Power Dissipation 50 W
Linear Derating Factor 0.4 W/℃
TSTG Storage Temperature Range -55 to 150 ℃
TJ Operating Junction Temperature Range -55 to 150 ℃

Thermal Data
Symbol Parameter Value Unit
Rthj-c Maximum Thermal Resistance, Junction-case 2.5 ℃/W
Rthj-a Maximum Thermal Resistance, Junction-ambient 62 ℃/W

Data & specifications subject to change without notice 1

200910094
AP40N03GP

Electrical Characteristics@Tj=25oC(unless otherwise specified)

Symbol Parameter Test Conditions Min. Typ. Max. Units
BVDSS Drain-Source Breakdown Voltage VGS=0V, ID=250uA 30 - - V
ΔBVDSS/ΔTj Breakdown Voltage Temperature Coefficient Reference to 25℃, ID=1mA - 0.037 - V/℃
2
RDS(ON) Static Drain-Source On-Resistance VGS=10V, ID=20A - 14 17 mΩ
VGS=4.5V, ID=16A - 20 23 mΩ
VGS(th) Gate Threshold Voltage VDS=VGS, ID=250uA 1 - 3 V
gfs Forward Transconductance VDS=10V, ID=20A - 26 - S
IDSS Drain-Source Leakage Current VDS=30V, VGS=0V - - 1 uA
o
Drain-Source Leakage Current (T j=125 C) VDS=24V,VGS=0V - - 250 uA
IGSS Gate-Source Leakage VGS= +20V, VDS=0V - - +100 nA
2
Qg Total Gate Charge ID=20A - 17 - nC
Qgs Gate-Source Charge VDS=24V - 3 - nC
Qgd Gate-Drain ("Miller") Charge VGS=5V - 10 - nC
2
td(on) Turn-on Delay Time VDS=15V - 7.2 - ns
tr Rise Time ID=20A - 60 - ns
td(off) Turn-off Delay Time RG=3.3Ω,VGS=10V - 22.5 - ns
tf Fall Time RD=0.75Ω - 10 - ns
Ciss Input Capacitance VGS=0V - 800 - pF
Coss Output Capacitance VDS=25V - 380 - pF
Crss Reverse Transfer Capacitance f=1.0MHz - 133 - pF

Source-Drain Diode
Symbol Parameter Test Conditions Min. Typ. Max. Units
IS Continuous Source Current ( Body Diode ) VD=VG=0V , VS=1.3V - - 40 A
1
ISM Pulsed Source Current ( Body Diode ) - - 169 A
2
VSD Forward On Voltage Tj=25℃, IS=40A, VGS=0V - - 1.3 V

Notes:
1.Pulse width limited by Max. junction temperature.
2.Pulse test

THIS PRODUCT IS SENSITIVE TO ELECTROSTATIC DISCHARGE, PLEASE HANDLE WITH CAUTION.

USE OF THIS PRODUCT AS A CRITICAL COMPONENT IN LIFE SUPPORT OR OTHER SIMILAR SYSTEMS IS NOT AUTHORIZED.
APEC DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED
HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS.
APEC RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE

RELIABILITY, FUNCTION OR DESIGN.

2
 AP40N03GP

200 100

T C =25 o C o
T C =150 C 10V
9.0V
160
10V 80 8.0V
9.0V 7.0V
ID , Drain Current (A)

ID , Drain Current (A)

8.0V 6.0V
7.0V 5.0V
120 60
6.0V

80 40
5.0V 4.0V

4.0V
40 20 V G =3.0V

V G =3.0V
0 0
0.0 2.0 4.0 6.0 8.0 10.0 0.0 2.0 4.0 6.0 8.0 10.0

V DS , Drain-to-Source Voltage (V) V DS , Drain-to-Source Voltage (V)

Fig 1. Typical Output Characteristics Fig 2. Typical Output Characteristics

32 2.0

I D =18A
I D =18A
T C =25 ℃ V G =10V
28

24 1.4
Normalized RDS(ON)
RDS(ON) (mΩ)

20

16 0.8

12

8 0.2
2 4 6 8 10 -50 0 50 100 150

V GS , Gate-to-Source Voltage (V) o

T j , Junction Temperature ( C)

Fig 3. On-Resistance v.s. Gate Voltage Fig 4. Normalized On-Resistance

v.s. Junction Temperature
100 2.0

1.8
VGS(th) (V)

1.6
IS(A)

10

1.4

T j =150 o C T j =25 o C

1.2

1 1.0
0.2 0.4 0.6 0.8 1 -50 0 50 100 150

V SD , Source-to-Drain Voltage (V) T j , Junction Temperature ( o C )

Fig 5. Forward Characteristic of Fig 6. Gate Threshold Voltage v.s.

Reverse Diode Junction Temperature

3
AP40N03GP
f=1.0MHz
16 1600

I D =18A
VGS , Gate to Source Voltage (V)

12 1200
V DS =16V
V DS =20V
V DS =24V

C (pF)
8 800 C iss

4 400 C oss

C rss

0 0
0 4 8 12 16 20 24 1 5 9 13 17 21 25 29

Q G , Total Gate Charge (nC) V DS ,Drain-to-Source Voltage (V)

Fig 7. Gate Charge Characteristics Fig 8. Typical Capacitance Characteristics

1000 1

Duty factor = 0.5

Normalized Thermal Response (Rthjc)

100 Operation in this 0.2

area limited by
ID (A)

RDS(ON)
0.1

100us 0.1

0.05

1ms PDM
10 t
0.02
T

T C =25 o C 10ms 0.01 Duty Factor = t/T

Peak Tj = PDM x Rthjc + T C

Single Pulse 100ms Single Pulse

DC
1 0.01
0.1 1 10 100 0.00001 0.0001 0.001 0.01 0.1 1

V DS ,Drain-to-Source Voltage (V) t , Pulse Width (s)

Fig 9. Maximum Safe Operating Area Fig 10. Effective Transient Thermal Impedance

VDS VG
90%
QG
5V
QGS QGD

10%
VGS

td(on) tr td(off) tf Charge Q

Fig 11. Switching Time Waveform Fig 12. Gate Charge Waveform