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BF457 8 9

This document describes three high voltage NPN transistors - the BF457, BF458, and BF459. These transistors are intended for use in video output stages in television receivers and horizontal deflection circuits. The document provides maximum ratings, thermal data, electrical characteristics, and mechanical specifications for the transistors.

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Nelson Hernandez
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82 views5 pages

BF457 8 9

This document describes three high voltage NPN transistors - the BF457, BF458, and BF459. These transistors are intended for use in video output stages in television receivers and horizontal deflection circuits. The document provides maximum ratings, thermal data, electrical characteristics, and mechanical specifications for the transistors.

Uploaded by

Nelson Hernandez
Copyright
© © All Rights Reserved
We take content rights seriously. If you suspect this is your content, claim it here.
Available Formats
Download as PDF, TXT or read online on Scribd
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BF457

BF458-BF459

HIGH VOLTAGE VIDEO AMPLIFIERS

DESCRIPTION
The BF457, BF458 and BF459 are silicon planar
epitaxial NPN transistors in Jedec TO-126 plastic
package. They are particularly intended for use as
video output stages in colour and black and white TV
receivers, class A output stages and drivers for hor-
izontal deflection circuits. These transistors have
been studied in order to guarantee the maximum re-
sistance against flash over.

SOT-32

INTERNAL SCHEMATIC DIAGRAM

ABSOLUTE MAXIMUM RATINGS


Value
Symbol Parameter Unit
BF 4 5 7 B F 4 5 8 B F 4 5 9
V CBO Collector-base Voltage (I E = 0) 160 250 300 V
V CEO Collector-emitter Voltage (I B = 0) 160 250 300 V
V EBO Emitter-base Voltage (I C = 0) 5 V
I CM Collector Peak Current 300 mA
IBM Base Peak Current 50 mA
Pt o t Total Power Dissipation at T amb ≤ 25 °C 1.25 W
T c as e ≤ 25 °C 12.5 W
T st g Storage Temperature – 55 to 150 °C
Tj Junction Temperature 150 °C

January 1989 1/5


BF457-BF458-BF459

THERMAL DATA
R t h j- cas e Thermal Resistance Junction-case Max 10 °C/W
R t h j-amb Thermal Resistance Junction-ambient Max 100 °C/W

ELECTRICAL CHARACTERISTICS (T case = 25 °C unless otherwise specified)


Symbol Parameter Test Conditions Min. Typ. Max. Unit
I CBO Collector Cutoff Current for BF 457 V CB = 100 V 50 nA
(I E = 0) for BF 458 V CB = 200 V 50 nA
for BF 459 V CB = 250 V 50 nA
V (BR)CE O * Collector-emitter Breakdown for BF 457 160 V
Voltage (I B = 0) I C = 10 mA for BF 458 250 V
for BF 459 300 V
V ( BR) Emittter-base Breakdown
EBO
I E = 100 µA 5 V
Voltage (I C = 0)
V CE (s at )* Collector-emitter
I C = 50 mA I B = 10 mA 1 V
Saturation Voltage
h F E* DC Current Gain I C = 30 mA V CE = 10 V 30 80
fT Transition Frequency I C = 30 mA V CE = 10 V 90 MHz
C re Reverse Capacitance IC = 0
V CE = 30 V 4 pF
f = 1 MHz
Co e Output Capacitance IC = 0
V CE = 30 V 5 pF
f = 1 MHz
* Pulsed : pulse duration = 300 µs, duty cycle = 1 %.

DC Current Gain. Collector-emitter Saturation Voltage.

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BF457-BF458-BF459

Transition Frequency. Output and Reverse Capacitance.

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BF457-BF458-BF459

SOT-32 MECHANICAL DATA

mm inch
DIM.
MIN. TYP. MAX. MIN. TYP. MAX.

A 7.4 7.8 0.291 0.307

B 10.5 10.8 0.413 0.445

b 0.7 0.9 0.028 0.035

b1 0.49 0.75 0.019 0.030

C 2.4 2.7 0.04 0.106

c1 1.2 0.047

D 15.7 0.618

e 2.2 0.087

e3 4.4 0.173

F 3.8 0.150

G 3 3.2 0.118 0.126

H 2.54 0.100

0016114

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BF457-BF458-BF459

Information furnished is believed to be accurate and reliable. However, SGS-THOMSON Microelectronics assumes no responsability for the
consequences of use of such information nor for any infringement of patents or other rights of third parties which may results from its use. No
license is granted by implication or otherwise under any patent or patent rights of SGS-THOMSON Microelectronics. Specifications mentioned
in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied.
SGS-THOMSON Microelectronics products are not authorized for use as critical components in life support devices or systems without express
written approval of SGS-THOMSON Microelectonics.

 1994 SGS-THOMSON Microelectronics - All Rights Reserved

SGS-THOMSON Microelectronics GROUP OF COMPANIES


Australia - Brazil - France - Germany - Hong Kong - Italy - Japan - Korea - Malaysia - Malta - Morocco - The Netherlands -
Singapore - Spain - Sweden - Switzerland - Taiwan - Thailand - United Kingdom - U.S.A

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