Keine Funktion QM801CS und QM802CS (TR 50R380; kann mit STD13NM60N Typ)

FP801S 5A
DM831C SB560
Dm832C SB560
DM833C SB560
Dm834C SB560
DP804C MUR460
RP824 0,17 Ohm
QP801CS 60R360
D9806C SB560
DM855C SF28G
DM857C SF28G
DM858C SF28G
DM856C SF28G
ICP801 S3051 8er
ICM801 6A20 16er
QM801CS 50R360
QM802CS 50R360
IC9808 SLC7015R2 8er
Q9801C K5N50

Q9805 2N7002K K72

C9820 4,7nF ?
IC9805 RB3 LR431 / TL431
QM802 KTD1624
RP805 100 Ohm
RP804 22 Ohm
RP821 47 Ohm
RP831 47 Ohm
RP830 47 Ohm
RP833 47 Ohm
RP832 47 Ohm
RM816 2,2 Ohm
RM842 100 Ohm
RM834 100 Ohm
RM810 2,2 Ohm
RM811 2,2 Ohm
BL Galaxy Electrical Production specification

Silicon Epitaxial Planar Diode 1N4148WS

FEATURES
z Fast Switching Speed:trr=4ns(Typ) Pb
Lead-free
z Surface Mount Package Ideally Suited For
Automatic Insertion
z For General Purpose Switching Applications
z High Conductance
z Available in Lead Free Version

APPLICATIONS SOD-323

z Surface mount fast switching diode

ORDERING INFORMATION
Type No. Marking Package Code

1N4148WS T4 SOD-323

MAXIMUM RATING @ Ta=25℃ unless otherwise specified

Characteristic Symbol Value Unit

Non-Repetitive Peak Reverse Voltage VRM 100 V
Peak Repetitive Reverse Voltage VRRM 75 V
Working Peak Reverse Voltage VRWM
DC Reverse Voltage VR

RMS Reverse Voltage VR(RMS) 53 V

Forward Continuous Current IFM 300 mA
Average Rectified Output Current Io 150 mA
Non-Repetitive Peak Forward Surge Current @t=1.0 μs IFSM 2.0 A
@t=1.0 s 1.0

Power Dissipation Pd 200 mW

Thermal Resistance Junction to Ambient Air RθJA 625 ℃/W
Operating and Storage Temperature Rage Tj,TSTG -65 to+150 ℃

Document number: BL/SSSDB002 www.galaxycn.com

Rev.A 1
BL Galaxy Electrical Production specification

Silicon Epitaxial Planar Diode 1N4148WS

ELECTRICAL CHARACTERISTICS @ Ta=25℃ unless otherwise specified

Characteristic Symbol Min Max Unit Test Condition
Reverse Breakdown Voltage V(BR)R 75 - V IR=1.0μA
Forward Voltage VF - 0.715 V IF=1.0mA
0.855 IF=10mA
1.0 IF=50mA
1.25 IF=150mA
Reverse Current IR - 1.0 μA VR=75V
25 nA VR=20V
Capacitance between CT - 2.0 pF VR=0,f=1.0MHz
terminals
Reverse Recovery Time trr - 4.0 ns IF=IR=10mA,
Irr=0.1×IR,RL=100Ω

TYPICAL CHARACTERISTICS @ Ta=25℃ unless otherwise specified

Document number: BL/SSSDB002 www.galaxycn.com

Rev.A 2
BL Galaxy Electrical Production specification

Silicon Epitaxial Planar Diode 1N4148WS

PACKAGE OUTLINE
Plastic surface mounted package SOD-323

K SOD-323
B C Dim Min Max
A 1.275 1.325

A B 1.675 1.725
D C 0.9 Typical
D 0.25 0.35
E 0.27 0.37
H 0.02 0.1

J H J 0.1 Typical
E
K 2.6 2.7
All Dimensions in mm

SOLDERING FOOTPRINT

Unit ：mm
PACKAGE INFORMATION
Device Package Shipping

1N4148WS SOD-323 3000/Tape&Reel

Document number: BL/SSSDB002 www.galaxycn.com

Rev.A 3
www.s-manuals.com
 2N7002KW
115mA , 60V, RDS(ON) 4 
Elektronische Bauelemente N-Ch Small Signal MOSFET with ESD Protection

RoHS Compliant Product

A suffix of “-C” specifies halogen & lead-free

FEATURES SOT-323
 RDS(ON), VGS@10V, IDS@500mA=3
 RDS(ON), [email protected], IDS@200mA=4
 Advanced Trench Process Technology A
L
 High Density Cell Design For Ultra Low On-Resistance 3
3
 Very Low Leakage Current In Off Condition Top View C B
 Specially Designed for Battery Operated Systems, 1
1 2
Solid-State Relays Drivers：Relays, Displays, Lamps, K E 2

Solenoids, Memories, etc.

 ESD Protected 2KV HBM D
 In compliance with EU RoHS 2002/95/EC directives F G H J

MECHANICAL DATA
 Case: SOT-323 Package
Millimeter Millimeter
 Terminals: Solderable per MIL-STD-750, REF.
Min. Max.
REF.
Min. Max.
Method 2026 A 1.80 2.20 G 0.100 REF.
B 1.80 2.45 H 0.525 REF.
C 1.15 1.35 J 0.08 0.25
D 0.80 1.10 K - -
MARKING E 1.20 1.40 L 0.650 TYP.
F 0.20 0.40

K72
Drain

PACKAGE INFORMATION
Package MPQ LeaderSize 
Gate
SOT-323 3K 7’ inch


Source

ABSOLUTE MAXIMUM RATINGS (TA = 25°C unless otherwise specified)

Parameter Symbol Rating Unit
Drain-Source Voltage VDS 60 V
Gate-Source Voltage VGS ±20 V
Continuous Drain Current ID 115 mA
1
Pulsed Drain Current IDM 800 mA
TA=25°C 200
Maximum Power Dissipation PD mW
TA=75°C 120
Thermal Resistance Junction-Ambient (PCB mounted) 2 RJA 625 °C / W
Operating Junction and Storage Temperature TJ, TSTG -55~150 °C
Notes:
1. Maximum DC current limited by the package.
2. Surface mounted on FR4 board, t < 5sec.

http://www.SeCoSGmbH.com/ Any changes of specification will not be informed individually.

31-Mar-2011 Rev. A Page 1 of 4

 2N7002KW
115mA , 60V, RDS(ON) 4 
Elektronische Bauelemente N-Ch Small Signal MOSFET with ESD Protection

N-CHANNEL ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise specified)

Parameter Symbol Min. Typ.2 Max. Unit Test Conditions
Static
Drain-Source Breakdown Voltage BVDSS 60 - - VGS=0, ID=10μA
V
Gate-Threshold Voltage VGS(th) 1 - 2.5 VDS= VGS, ID=250μA
- - 4 VGS=4.5V, ID=200mA
Drain-Source On-Resistance RDS(ON) Ω
- - 3 VGS=10V, ID=500mA
Zero Gate Voltage Drain Current IDSS - - 1 μA VDS=60V, VGS=0
Gate-Body Leakage Current IGSS - - ±10 μA VDS=0, VGS= ±20V
Forward Transconductance gfs 100 - - mS VDS=15V, ID=250mA
Dynamic
Total Gate Charge Qg - - 0.8 nC VDS=15V, VGS=4.5V, ID=200mA

Turn-On Time t(on) - - 20 VDD=30V, RL=150Ω,

nS ID=200mA, VGEN=10V,
Turn-Off Time t(off - - 40 RG=10Ω　

Input Capacitance Ciss - - 35

Output Capacitance Coss - - 10 pF VDS=25V, VGS=0V, f=1MHz
Reverse Transfer Capacitance Crss - - 5

Source-Drain Diode
Diode Forward Voltage VSD - 0.82 1.3 V IS=200mA, VGS=0V
Continuous Diode Forward Current IS - - 115 mA
Pulse Diode Forward Current ISM - - 800 mA

http://www.SeCoSGmbH.com/ Any changes of specification will not be informed individually.

31-Mar-2011 Rev. A Page 2 of 4

 2N7002KW
115mA , 60V, RDS(ON) 4 
Elektronische Bauelemente N-Ch Small Signal MOSFET with ESD Protection

CHARACTERISTIC CURVE

FIG.1‐Ouput Characteristic  FIG.2‐Transfer Characteristic

FIG.3‐On Resistance vs Drain Current  FIG.4‐ On Resistance vs Gate to Source Voltage

FIG.5‐On Resistance vs Junction Temperature

http://www.SeCoSGmbH.com/ Any changes of specification will not be informed individually.

31-Mar-2011 Rev. A Page 3 of 4

 2N7002KW
115mA , 60V, RDS(ON) 4 
Elektronische Bauelemente N-Ch Small Signal MOSFET with ESD Protection

CHARACTERISTIC CURVE

FIG.6‐Gate Charge Waveform  FIG.7‐Gate Charge 

FIG.8‐Threshold Voltage vs Temperature FIG.9‐Breakdown Voltage vs Junction Temperature

FIG.10‐Source‐Drain Diode Forward Voltage

http://www.SeCoSGmbH.com/ Any changes of specification will not be informed individually.

31-Mar-2011 Rev. A Page 4 of 4

- 318 -
www.s-manuals.com
 MCC TM
 
omponents
20736 Marilla Street Chatsworth
BAT54
Micro Commercial Components
 THRU
  !"#
$
%    !"# BAT54S
Features
• Lead Free Finish/Rohs Compliant ("P"Suffix designates
RoHS Compliant. See ordering information)
• Low Forward Voltage
• Surface Mount device 200mWatt, 30Volt
• Epoxy meets UL 94 V-0 flammability rating
• Moisture Sensitivity Level 1
Schottky Barrier Diode
• Halogen free available upon request by adding suffix "-HF"

MCC Catalog Device Marking Pin

Type
Number
1 2
Configuration
See page 3
SOT-23
A
BAT54 KL1 L4 Single Figure 1 D
BAT54A KL2 L42 Dual Figure 2
BAT54C KL3 L43 Dual Figure 3
BAT54S KL4 L44 Dual Figure 4 C B

Maximum Ratings F E

Continuos Reverse Voltage VR 30V

Forward ContinuousCurrent IF 200mA
Non-Repetitive Peak Forward Current t<1s IFSM 0.6A G H J

Total Power Dissipation @ TA = 25°C PD 200mW

K
Storage Temperature Range Tstg -55°C to 150°C
DIMENSIONS
Operating Junction Temperature Range Tj -55°C to 125°C
INCHES MM
Soldering temperature during 10s Tj 260°C DIM MIN MAX MIN MAX NOTE
A .110 .120 2.80 3.04
B .083 .104 2.10 2.64
C .047 .055 1.20 1.40
D .035 .041 .89 1.03
Electrical Characteristics @ 25 °C Unless Otherwise Specified E .070 .081 1.78 2.05
F .018 .024 .45 .60
Characteristics Symbol Max. Notes G .0005 .0039 .013 .100
Forward Voltage at H .035 .044 .89 1.12
J .003 .007 .085 .180
IF = 0.1mA 240mV K .015 .020 .37 .51
IF = 1mA VF 320mV
IF = 10mA 400mV Suggested Solder
IF = 30mA 500mV Pad Layout
IF = 100mA 1000mV .031
.800
Reverse Current IR 2.0 uA VR = 25V
.035
.900

.079
Capacitance CJ 10pF Measured at 2.000
in ches
mm
1.0MHz, VR=1.0V
Reverse Recovery trr 5nS IF=IR=10mA;
Time I(REC) = 1mA
.037
Thermal Resistance, RθJA 500 °C/W .950
.037
Junction to Ambient .950

Revision: B
www.mccsemi.com 1 of 3 2013/01/01
 BAT54 thru BAT54S MCC
Micro Commercial Components
TM

1 100
IF, INSTANTANEOUS FORWARD CURRENT (A)

TA = 125ºC

10
0.1

TA = 75ºC
1
TA = 125ºC
TA = 75ºC
0.01
TA = 25ºC

TA = 25ºC 0.1

TA = 0ºC TA = 0ºC
0.001
0.01
TA = -40ºC

0.0001 0.001
0 0.2 0.4 0.6 0.8 1.0 0 5 10 15 20 25 30

VF, INSTANTANEOUS FORWARD VOLTAGE (V) VR, INSTANTANEOUS REVERSE VOLTAGE (V)
Fig. 1 Forward Characteristics Fig. 2 Typical Reverse Characteristics
12
f = 1.0MHz

10
PD, POWER DISSIPATION (mW)

200
CT, TOTAL CAPACITANCE (pF)

100
4

0
0
0 5 10 15 20 25 30 0 25 50 75 100 125

VR, REVERSE VOLTAGE (V) TA, AMBIENT TEMPERATURE (° C)

Fig. 3 Typical Capacitance vs. Reverse Voltage Fig. 4 Power Derating Curve

Pin Configuration - Top View

1 2
Figure 1 Figure 2 Figure 3 Figure 4

BAT54 BAT54A BAT54C BAT54S

www.mccsemi.com
Revision: B 2 of 3 2013/01/01
 MCC
Micro Commercial Components
TM

Ordering Information :
Device Packing
Part Number-TP Tape&Reel: 3Kpcs/Reel
Note : Adding "-HF" suffix for halogen free, eg. Part Number-TP-HF

***IMPORTANT NOTICE***

Micro Commercial Components Corp. reserves the right to make changes without further notice to any product herein to
make corrections, modifications , enhancements , improvements , or other changes . Micro Commercial Components
Corp . does not assume any liability arising out of the application or use of any product described herein; neither does it
convey any license under its patent rights ,nor the rights of others . The user of products in such applications shall assume all
risks of such use and will agree to hold Micro Commercial Components Corp . and all the companies whose products are
represented on our website, harmless against all damages.

***LIFE SUPPORT***

MCC's products are not authorized for use as critical components in life support devices or systems without the express written
approval of Micro Commercial Components Corporation.

***CUSTOMER AWARENESS***

Counterfeiting of semiconductor parts is a growing problem in the industry. Micro Commercial Components (MCC) is taking
strong measures to protect ourselves and our customers from the proliferation of counterfeit parts. MCC strongly encourages
customers to purchase MCC parts either directly from MCC or from Authorized MCC Distributors who are listed by country on
our web page cited below. Products customers buy either from MCC directly or from Authorized MCC Distributors are genuine
parts, have full traceability, meet MCC's quality standards for handling and storage. MCC will not provide any warranty
coverage or other assistance for parts bought from Unauthorized Sources. MCC is committed to combat this global
problem and encourage our customers to do their part in stopping this practice by buying direct or from authorized
distributors.

www.mccsemi.com 3 of 3
Revision: B 2013/01/01
3
www.s-manuals.com
 BZX84 series
Voltage regulator diodes
Rev. 6 — 6 March 2014 Product data sheet

1. Product profile

1.1 General description

Low-power voltage regulator diodes in a small SOT23 (TO-236AB) Surface-Mounted
Device (SMD) plastic package.

The diodes are available in the normalized E24 1 % (BZX84-A), 2 % (BZX84-B) and
approximately 5 % (BZX84-C) tolerance range. The series includes 37 breakdown
voltages with nominal working voltages from 2.4 V to 75 V.

1.2 Features and benefits

 Total power dissipation:  250 mW  Working voltage range:
nominal 2.4 V to 75 V (E24 range)
 Three tolerance series: 1 %, 2 % and  Non-repetitive peak reverse power
approximately 5 % dissipation:  40 W
 AEC-Q101 qualified

1.3 Applications
 General regulation functions

1.4 Quick reference data

Table 1. Quick reference data
Symbol Parameter Conditions Min Typ Max Unit
VF forward voltage IF = 10 mA [1] - - 0.9 V
Ptot total power dissipation Tamb  25 °C [2] - - 250 mW

[1] Pulse test: tp  100 s;   0.02

[2] Device mounted on a FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated and standard
footprint.
Nexperia BZX84 series
Voltage regulator diodes

2. Pinning information
Table 2. Pinning
Pin Symbol Description Simplified outline Graphic symbol
1 A anode
3 K
2 n.c. not connected
3 K cathode A n.c.

1 2 aaa-006592

3. Ordering information
Table 3. Ordering information
Type number Package
Name Description Version
BZX84 series[1] TO-236AB plastic surface-mounted package; 3 leads SOT23

[1] The series includes 37 breakdown voltages with nominal working voltages from 2.4 V to 75 V and 1 %,
2 % and 5 % tolerances.

4. Marking
Table 4. Marking codes
Type number Marking code[1] Type number Marking code[1]
BZX84-A2V4 *50 BZX84-A18 KF*
BZX84-A2V7 *51 BZX84-A20 *C2
BZX84-A3V0 *52 BZX84-A22 KG*
BZX84-A3V3 *53 BZX84-A24 KH*
BZX84-A3V6 *C1 BZX84-A27 *75
BZX84-A3V9 *55 BZX84-A30 KJ*
BZX84-A4V3 *56 BZX84-A33 KK*
BZX84-A4V7 *57 BZX84-A36 *C3
BZX84-A5V1 *58 BZX84-A39 *C4
BZX84-A5V6 *59 BZX84-A43 *C5
BZX84-A6V2 *60 BZX84-A51 *C6
BZX84-A6V8 *61 BZX84-A75 *86
BZX84-A7V5 *62 BZX84-B2V4 *Z0
BZX84-A8V2 *63 BZX84-B2V7 *Z1
BZX84-A9V1 *64 BZX84-B3V0 *S1
BZX84-A10 *65 BZX84-B3V3 *S2
BZX84-A11 *04 BZX84-B3V6 *S3
BZX84-A12 *67 BZX84-B3V9 *S4
BZX84-A13 *C0 BZX84-B4V3 *S7
BZX84-A15 *69 BZX84-B4V7 *S8
BZX84-A16 KE* BZX84-B5V1 *R1

BZX84_SER All information provided in this document is subject to legal disclaimers. © Nexperia B.V. 2017. All rights reserved

Product data sheet Rev. 6 — 6 March 2014 2 of 16

Nexperia BZX84 series
Voltage regulator diodes

Table 4. Marking codes …continued

Type number Marking code[1] Type number Marking code[1]
BZX84-B5V6 *R2 BZX84-C3V9 *B3
BZX84-B6V2 *R5 BZX84-C4V3 *B6
BZX84-B6V8 *R6 BZX84-C4V7 Z1*
BZX84-B7V5 *R8 BZX84-C5V1 Z2*
BZX84-B8V2 *R9 BZX84-C5V6 Z3*
BZX84-B9V1 *T1 BZX84-C6V2 Z4*
BZX84-B10 *66 BZX84-C6V8 Z5*
BZX84-B11 *Z6 BZX84-C7V5 Z6*
BZX84-B12 *Z7 BZX84-C8V2 Z7*
BZX84-B13 *Z8 BZX84-C9V1 Z8*
BZX84-B15 *Z9 BZX84-C10 Z9*
BZX84-B16 *70 BZX84-C11 Y1*
BZX84-B18 *71 BZX84-C12 Y2*
BZX84-B20 *72 BZX84-C13 Y3*
BZX84-B22 *73 BZX84-C15 Y4*
BZX84-B24 *74 BZX84-C16 Y5*
BZX84-B27 *Z5 BZX84-C18 Y6*
BZX84-B30 *Z4 BZX84-C20 Y7*
BZX84-B33 *Y1 BZX84-C22 Y8*
BZX84-B36 *Y2 BZX84-C24 Y9*
BZX84-B39 *S0 BZX84-C27 *T2
BZX84-B43 *S5 BZX84-C30 *T5
BZX84-B47 *S6 BZX84-C33 *T6
BZX84-B51 *S9 BZX84-C36 *T7
BZX84-B56 *R0 BZX84-C39 *T8
BZX84-B62 *R3 BZX84-C43 *B4
BZX84-B68 *R4 BZX84-C47 *B5
BZX84-B75 *R7 BZX84-C51 *B7
BZX84-C2V4 *T3 BZX84-C56 *B8
BZX84-C2V7 *T4 BZX84-C62 *B9
BZX84-C3V0 *T9 BZX84-C68 *B0
BZX84-C3V3 *B1 BZX84-C75 *A1
BZX84-C3V6 *B2 - -

[1] * = placeholder for manufacturing site code

BZX84_SER All information provided in this document is subject to legal disclaimers. © Nexperia B.V. 2017. All rights reserved

Product data sheet Rev. 6 — 6 March 2014 3 of 16

Nexperia BZX84 series
Voltage regulator diodes

5. Limiting values
Table 5. Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol Parameter Conditions Min Max Unit
IF forward current - 200 mA
PZSM non-repetitive peak [1] - 40 W
reverse power dissipation
Ptot total power dissipation Tamb  25 C [2] - 250 mW
Tamb ambient temperature - 150 C
Tstg storage temperature 55 +150 C
Tj junction temperature 65 +150 C

[1] tp = 100 s; square wave; Tj = 25 C before surge

[2] Device mounted on a FR4 PCB, single-sided copper, tin-plated and standard footprint.

6. Thermal characteristics
Table 6. Thermal characteristics
Symbol Parameter Conditions Min Typ Max Unit
Rth(j-a) thermal resistance from in free air [1] - - 500 K/W
junction to ambient
Rth(j-sp) thermal resistance from [2] - - 330 K/W
junction to solder point

[1] Device mounted on a FR4 PCB, single-sided copper, tin-plated and standard footprint.
[2] Soldering point of cathode tab.

7. Characteristics
Table 7. Characteristics
Tj = 25 C unless otherwise specified.
Symbol Parameter Conditions Min Typ Max Unit
VF forward voltage IF = 10 mA [1] - - 0.9 V

[1] Pulse test: tp  100 s;   0.02

BZX84_SER All information provided in this document is subject to legal disclaimers. © Nexperia B.V. 2017. All rights reserved

Product data sheet Rev. 6 — 6 March 2014 4 of 16

Nexperia BZX84 series
Voltage regulator diodes

Table 8. Characteristics per type; BZX84-A2V4 to BZX84-C24

Tj = 25 C unless otherwise specified.
BZX84- Sel Working Differential resistance Reverse Temperature Diode Non-repetitive
xxx voltage rdif () current coefficient capacitance peak reverse
VZ (V) IR (A) SZ (mV/K) Cd (pF)[1] current
IZ = 5 mA IZ = 1 mA IZ = 5 mA IZ = 5 mA IZSM (A)[2]

Min Max Typ Max Typ Max Max VR (V) Min Typ Max Max Max
2V4 A 2.37 2.43 275 600 70 100 50 1 3.5 1.6 0 450 6.0
B 2.35 2.45
C 2.2 2.6
2V7 A 2.67 2.73 300 600 75 100 20 1 3.5 2.0 0 450 6.0
B 2.65 2.75
C 2.5 2.9
3V0 A 2.97 3.03 325 600 80 95 10 1 3.5 2.1 0 450 6.0
B 2.94 3.06
C 2.8 3.2
3V3 A 3.26 3.34 350 600 85 95 5 1 3.5 2.4 0 450 6.0
B 3.23 3.37
C 3.1 3.5
3V6 A 3.56 3.64 375 600 85 90 5 1 3.5 2.4 0 450 6.0
B 3.53 3.67
C 3.4 3.8
3V9 A 3.86 3.94 400 600 85 90 3 1 3.5 2.5 0 450 6.0
B 3.82 3.98
C 3.7 4.1
4V3 A 4.25 4.35 410 600 80 90 3 1 3.5 2.5 0 450 6.0
B 4.21 4.39
C 4.0 4.6
4V7 A 4.65 4.75 425 500 50 80 3 2 3.5 1.4 0.2 300 6.0
B 4.61 4.79
C 4.4 5.0
5V1 A 5.04 5.16 400 480 40 60 2 2 2.7 0.8 1.2 300 6.0
B 5.0 5.2
C 4.8 5.4
5V6 A 5.54 5.66 80 400 15 40 1 2 2.0 1.2 2.5 300 6.0
B 5.49 5.71
C 5.2 6.0
6V2 A 6.13 6.27 40 150 6 10 3 4 0.4 2.3 3.7 200 6.0
B 6.08 6.32
C 5.8 6.6
6V8 A 6.73 6.87 30 80 6 15 2 4 1.2 3.0 4.5 200 6.0
B 6.66 6.94
C 6.4 7.2

BZX84_SER All information provided in this document is subject to legal disclaimers. © Nexperia B.V. 2017. All rights reserved

Product data sheet Rev. 6 — 6 March 2014 5 of 16

Nexperia BZX84 series
Voltage regulator diodes

Table 8. Characteristics per type; BZX84-A2V4 to BZX84-C24 …continued

Tj = 25 C unless otherwise specified.
BZX84- Sel Working Differential resistance Reverse Temperature Diode Non-repetitive
xxx voltage rdif () current coefficient capacitance peak reverse
VZ (V) IR (A) SZ (mV/K) Cd (pF)[1] current
IZ = 5 mA IZ = 1 mA IZ = 5 mA IZ = 5 mA IZSM (A)[2]

Min Max Typ Max Typ Max Max VR (V) Min Typ Max Max Max
7V5 A 7.42 7.58 30 80 6 15 1 5 2.5 4.0 5.3 150 4.0
B 7.35 7.65
C 7.0 7.9
8V2 A 8.11 8.29 40 80 6 15 0.7 5 3.2 4.6 6.2 150 4.0
B 8.04 8.36
C 7.7 8.7
9V1 A 9 9.2 40 100 6 15 0.5 6 3.8 5.5 7.0 150 3.0
B 8.92 9.28
C 8.5 9.6
10 A 9.9 10.1 50 150 8 20 0.2 7 4.5 6.4 8.0 90 3.0
B 9.8 10.2
C 9.4 10.6
11 A 10.8 11.11 50 150 10 20 0.1 8 5.4 7.4 9.0 85 2.5
B 10.8 11.2
C 10.4 11.6
12 A 11.88 12.12 50 150 10 25 0.1 8 6.0 8.4 10.0 85 2.5
B 11.8 12.2
C 11.4 12.7
13 A 12.87 13.13 50 170 10 30 0.1 8 7.0 9.4 11.0 80 2.5
B 12.7 13.3
C 12.4 14.1
15 A 14.85 15.15 50 200 10 30 0.05 10.5 9.2 11.4 13.0 75 2.0
B 14.7 15.3
C 13.8 15.6
16 A 15.84 16.16 50 200 10 40 0.05 11.2 10.4 12.4 14.0 75 1.5
B 15.7 16.3
C 15.3 17.1
18 A 17.82 18.18 50 225 10 45 0.05 12.6 12.4 14.4 16.0 70 1.5
B 17.6 18.4
C 16.8 19.1
20 A 19.8 20.2 60 225 15 55 0.05 14 14.4 16.4 18.0 60 1.5
B 19.6 20.4
C 18.8 21.2
22 A 21.78 22.22 60 250 20 55 0.05 15.4 16.4 18.4 20.0 60 1.25
B 21.6 22.4
C 20.8 23.3

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Product data sheet Rev. 6 — 6 March 2014 6 of 16

Nexperia BZX84 series
Voltage regulator diodes

Table 8. Characteristics per type; BZX84-A2V4 to BZX84-C24 …continued

Tj = 25 C unless otherwise specified.
BZX84- Sel Working Differential resistance Reverse Temperature Diode Non-repetitive
xxx voltage rdif () current coefficient capacitance peak reverse
VZ (V) IR (A) SZ (mV/K) Cd (pF)[1] current
IZ = 5 mA IZ = 1 mA IZ = 5 mA IZ = 5 mA IZSM (A)[2]

Min Max Typ Max Typ Max Max VR (V) Min Typ Max Max Max
24 A 23.76 24.24 60 250 25 70 0.05 16.8 18.4 20.4 22.0 55 1.25
B 23.5 24.5
C 22.8 25.6

[1] f = 1 MHz; VR = 0 V
[2] tp = 100 s; square wave; Tj = 25 C before surge

Table 9. Characteristics per type; BZX84-A27 to BZX84-C75

Tj = 25 C unless otherwise specified.
BZX84- Sel Working Differential resistance Reverse Temperature Diode Non-repetitive
xxx voltage rdif () current coefficient capacitance peak reverse
VZ (V) IR (A) SZ (mV/K) Cd (pF)[1] current
IZ = 2 mA IZ = 0.5 mA IZ = 2 mA IZ = 2 mA IZSM (A)[2]

Min Max Typ Max Typ Max Max VR (V) Min Typ Max Max Max
27 A 26.73 27.27 65 300 25 80 0.05 18.9 21.4 23.4 25.3 50 1.0
B 26.5 27.5
C 25.1 28.9
30 A 29.7 30.30 70 300 30 80 0.05 21 24.4 26.6 29.4 50 1.0
B 29.4 30.6
C 28.0 32.0
33 A 32.67 33.33 75 325 35 80 0.05 23.1 27.4 29.7 33.4 45 0.9
B 32.3 33.7
C 31.0 35.0
36 A 35.64 36.36 80 350 35 90 0.05 25.2 30.4 33.0 37.4 45 0.8
B 35.3 36.7
C 34.0 38.0
39 A 38.61 39.39 80 350 40 130 0.05 27.3 33.4 36.4 41.2 45 0.7
B 38.2 39.8
C 37.0 41.0
43 A 42.57 43.43 85 375 45 150 0.05 30.1 37.6 41.2 46.6 40 0.6
B 42.1 43.9
C 40.0 46.0
47 B 46.1 47.9 85 375 50 170 0.05 32.9 42.0 46.1 51.8 40 0.5
C 44.0 50.0
51 A 50.49 51.51 90 400 60 180 0.05 35.7 46.6 51.0 57.2 40 0.4
B 50.0 52.0
C 48.0 54.0

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Product data sheet Rev. 6 — 6 March 2014 7 of 16

Nexperia BZX84 series
Voltage regulator diodes

Table 9. Characteristics per type; BZX84-A27 to BZX84-C75 …continued

Tj = 25 C unless otherwise specified.
BZX84- Sel Working Differential resistance Reverse Temperature Diode Non-repetitive
xxx voltage rdif () current coefficient capacitance peak reverse
VZ (V) IR (A) SZ (mV/K) Cd (pF)[1] current
IZ = 2 mA IZ = 0.5 mA IZ = 2 mA IZ = 2 mA IZSM (A)[2]

Min Max Typ Max Typ Max Max VR (V) Min Typ Max Max Max
56 B 54.9 57.1 100 425 70 200 0.05 39.2 52.2 57.0 63.8 40 0.3
C 52.0 60.0
62 B 60.8 63.2 120 450 80 215 0.05 43.4 58.8 64.4 71.6 35 0.3
C 58.0 66.0
68 B 66.6 69.4 150 475 90 240 0.05 47.6 65.6 71.7 79.8 35 0.25
C 64.0 72.0
75 A 74.25 75.75 170 500 95 255 0.05 52.5 73.4 80.2 88.6 35 0.20
B 73.5 76.5
C 70.0 79.0

[1] f = 1 MHz; VR = 0 V
[2] tp = 100 s; square wave; Tj = 25 C before surge

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Product data sheet Rev. 6 — 6 March 2014 8 of 16

Nexperia BZX84 series
Voltage regulator diodes

mbg801 mbg781
103 300

PZSM IF
(W) (mA)

102 200

(1)
10 100
(2)

1 0
10−1 1 10 0.6 0.8 1
tp (ms) VF (V)

(1) Tj = 25 C (before surge) Tj = 25 C

(2) Tj = 150 C (before surge)
Fig 1. Non-repetitive peak reverse power dissipation Fig 2. Forward current as a function of forward
as a function of pulse duration; maximum voltage; typical values
values

mbg783 mbg782
0 10
12
SZ SZ
4V3 11
(mV/K) (mV/K)
10
9V1
−1 5
3V9 8V2
7V5
3V6 6V8
6V2
5V6
5V1
−2 3V3 0
3V0 4V7

2V4
2V7
−3 −5
0 20 40 IZ (mA) 60 0 4 8 12 16 20
IZ (mA)

BZX84-A/B/C2V4 to BZX84-A/B/C4V3 BZX84-A/B/C4V7 to BZX84-A/B/C12

Tj = 25 C to 150 C Tj = 25 C to 150 C
Fig 3. Temperature coefficient as a function of Fig 4. Temperature coefficient as a function of
working current; typical values working current; typical values

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Product data sheet Rev. 6 — 6 March 2014 9 of 16

Nexperia BZX84 series
Voltage regulator diodes

aaa-006665 aaa-006666
10-1 10-1
IR 2V4 3V6 3V9 4V3 4V7 5V1 IR
(A) (A)
10-2 2V7 10-2 7V5 10 12 15 18 22
3V0 8V2
10-3
3V3 10-3 9V1
11 13 16 20 24
10-4
10-4
10-5
10-5
10-6 5V6 6V2 6V8

10-6
10-7

10-8 10-7

10-9 10-8
0 2 4 6 8 0 5 10 15 20 25
VR (V) VR (V)

BZX84-A/B/C2V4 to BZX84-A/B/C6V8 BZX84-A/B/C7V5 to BZX84-A/B/C24

Tamb = 25 C Tamb = 25 C
Fig 5. Reverse current as a function of reverse Fig 6. Reverse current as a function of reverse
voltage; typical values voltage; typical values

aaa-006667
10-1
IR 30 36 43 51 62 75
(A)
10-2
27 33 39 47 56 68

10-3

10-4

10-5

10-6

10-7

10-8

10-9
20 40 60 80
VR (V)

BZX84-A/B/C27 to BZX84-A/B/C75
Tamb = 25 C
Fig 7. Reverse current as a function of reverse voltage; typical values

8. Test information

8.1 Quality information

This product has been qualified in accordance with the Automotive Electronics Council
(AEC) standard Q101 - Stress test qualification for discrete semiconductors, and is
suitable for use in automotive applications.

BZX84_SER All information provided in this document is subject to legal disclaimers. © Nexperia B.V. 2017. All rights reserved

Product data sheet Rev. 6 — 6 March 2014 10 of 16

Nexperia BZX84 series
Voltage regulator diodes

9. Package outline

3.0 1.1
2.8 0.9

0.45
0.15
2.5 1.4
2.1 1.2

1 2
0.48 0.15
0.38 0.09
1.9

Dimensions in mm 04-11-04

Fig 8. Package outline SOT23 (TO-236AB)

10. Packing information

Table 10. Packing methods
The indicated -xxx are the last three digits of the 12NC ordering code.[1]
Type number Package Description Packing quantity
3000 10000
BZX84 series[2] SOT23 4 mm pitch, 8 mm tape and reel -215 -235
(TO-236AB)

[1] For further information and the availability of packing methods, see Section 14.
[2] The series includes 37 breakdown voltages with nominal working voltages from 2.4 V to 75 V and 1 %,
2 % and 5 % tolerances.

BZX84_SER All information provided in this document is subject to legal disclaimers. © Nexperia B.V. 2017. All rights reserved

Product data sheet Rev. 6 — 6 March 2014 11 of 16

Nexperia BZX84 series
Voltage regulator diodes

11. Soldering

3.3

2.9

1.9

solder lands

solder resist
3 1.7 2

solder paste

0.7 0.6 occupied area

(3×) (3×)
Dimensions in mm

0.5
(3×)
0.6
(3×)

1 sot023_fr

Fig 9. Reflow soldering footprint SOT23 (TO-236AB)

2.2
1.2
(2×)

1.4
(2×)

solder lands

4.6 2.6 solder resist

occupied area

Dimensions in mm
1.4

preferred transport direction during soldering

2.8

4.5 sot023_fw

Fig 10. Wave soldering footprint SOT23 (TO-236AB)

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Product data sheet Rev. 6 — 6 March 2014 12 of 16

Nexperia BZX84 series
Voltage regulator diodes

12. Revision history

Table 11. Revision history
Document ID Release date Data sheet status Change notice Supersedes
BZX84_SER v.6 20140306 Product data sheet - BZX84_SER v.5
Modifications: • Descriptive title of the document corrected
BZX84_SER v.5 20130918 Product data sheet - BZX84_SER v.4
BZX84_SER v.4 20130322 Product data sheet - BZX84_SERIES v.3
BZX84_SERIES v.3 20030410 Product data sheet - BZX84 v.2
BZX84 v.2 19990518 Product specification - BZX84 v.1
BZX84 v.1 19960426 Product specification - -

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Product data sheet Rev. 6 — 6 March 2014 13 of 16

Nexperia BZX84 series
Voltage regulator diodes

13. Legal information

13.1 Data sheet status

Document status[1][2] Product status[3] Definition
Objective [short] data sheet Development This document contains data from the objective specification for product development.
Preliminary [short] data sheet Qualification This document contains data from the preliminary specification.
Product [short] data sheet Production This document contains the product specification.

[1] Please consult the most recently issued document before initiating or completing a design.
[2] The term ‘short data sheet’ is explained in section “Definitions”.
[3] The product status of device(s) described in this document may have changed since this document was published and may differ in case of multiple devices. The latest product status
information is available on the Internet at URL http://www.nexperia.com.

13.2 Definitions Suitability for use in automotive applications — This Nexperia

product has been qualified for use in automotive
applications. Unless otherwise agreed in writing, the product is not designed,
Draft — The document is a draft version only. The content is still under
authorized or warranted to be suitable for use in life support, life-critical or
internal review and subject to formal approval, which may result in
safety-critical systems or equipment, nor in applications where failure or
modifications or additions. Nexperia does not give any
malfunction of a Nexperia product can reasonably be expected
representations or warranties as to the accuracy or completeness of
to result in personal injury, death or severe property or environmental
information included herein and shall have no liability for the consequences of
damage. Nexperia and its suppliers accept no liability for
use of such information.
inclusion and/or use of Nexperia products in such equipment or
Short data sheet — A short data sheet is an extract from a full data sheet applications and therefore such inclusion and/or use is at the customer's own
with the same product type number(s) and title. A short data sheet is intended risk.
for quick reference only and should not be relied upon to contain detailed and
Applications — Applications that are described herein for any of these
full information. For detailed and full information see the relevant full data
products are for illustrative purposes only. Nexperia makes no
sheet, which is available on request via the local Nexperia sales
representation or warranty that such applications will be suitable for the
office. In case of any inconsistency or conflict with the short data sheet, the
specified use without further testing or modification.
full data sheet shall prevail.
Customers are responsible for the design and operation of their applications
Product specification — The information and data provided in a Product and products using Nexperia products, and Nexperia
data sheet shall define the specification of the product as agreed between accepts no liability for any assistance with applications or customer product
Nexperia and its customer, unless Nexperia and design. It is customer’s sole responsibility to determine whether the Nexperia
customer have explicitly agreed otherwise in writing. In no event however, product is suitable and fit for the customer’s applications and
shall an agreement be valid in which the Nexperia product is products planned, as well as for the planned application and use of
deemed to offer functions and qualities beyond those described in the customer’s third party customer(s). Customers should provide appropriate
Product data sheet. design and operating safeguards to minimize the risks associated with their
applications and products.

13.3 Disclaimers Nexperia does not accept any liability related to any default,
damage, costs or problem which is based on any weakness or default in the
customer’s applications or products, or the application or use by customer’s
Limited warranty and liability — Information in this document is believed to
third party customer(s). Customer is responsible for doing all necessary
be accurate and reliable. However, Nexperia does not give any
testing for the customer’s applications and products using Nexperia
representations or warranties, expressed or implied, as to the accuracy or
products in order to avoid a default of the applications and
completeness of such information and shall have no liability for the
the products or of the application or use by customer’s third party
consequences of use of such information. Nexperia takes no
customer(s). Nexperia does not accept any liability in this respect.
responsibility for the content in this document if provided by an information
source outside of Nexperia. Limiting values — Stress above one or more limiting values (as defined in
the Absolute Maximum Ratings System of IEC 60134) will cause permanent
In no event shall Nexperia be liable for any indirect, incidental,
damage to the device. Limiting values are stress ratings only and (proper)
punitive, special or consequential damages (including - without limitation - lost
operation of the device at these or any other conditions above those given in
profits, lost savings, business interruption, costs related to the removal or
the Recommended operating conditions section (if present) or the
replacement of any products or rework charges) whether or not such
Characteristics sections of this document is not warranted. Constant or
damages are based on tort (including negligence), warranty, breach of
repeated exposure to limiting values will permanently and irreversibly affect
contract or any other legal theory.
the quality and reliability of the device.
Notwithstanding any damages that customer might incur for any reason
whatsoever, Nexperia’s aggregate and cumulative liability towards Terms and conditions of commercial sale — Nexperia
customer for the products described herein shall be limited in accordance products are sold subject to the general terms and conditions of commercial
with the Terms and conditions of commercial sale of Nexperia. sale, as published at http://www.nexperia.com/profile/terms, unless otherwise
agreed in a valid written individual agreement. In case an individual
Right to make changes — Nexperia reserves the right to make agreement is concluded only the terms and conditions of the respective
changes to information published in this document, including without agreement shall apply. Nexperia hereby expressly objects to
limitation specifications and product descriptions, at any time and without applying the customer’s general terms and conditions with regard to the
notice. This document supersedes and replaces all information supplied prior purchase of Nexperia products by customer.
to the publication hereof.

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Product data sheet Rev. 6 — 6 March 2014 14 of 16

Nexperia BZX84 series
Voltage regulator diodes

No offer to sell or license — Nothing in this document may be interpreted or Translations — A non-English (translated) version of a document is for
construed as an offer to sell products that is open for acceptance or the grant, reference only. The English version shall prevail in case of any discrepancy
conveyance or implication of any license under any copyrights, patents or between the translated and English versions.
other industrial or intellectual property rights.
Export control — This document as well as the item(s) described herein
may be subject to export control regulations. Export might require a prior
13.4 Trademarks
authorization from competent authorities. Notice: All referenced brands, product names, service names and trademarks
Quick reference data — The Quick reference data is an extract of the are the property of their respective owners.
product data given in the Limiting values and Characteristics sections of this
document, and as such is not complete, exhaustive or legally binding.

14. Contact information

For more information, please visit: http://www.nexperia.com
For sales office addresses, please send an email to: [email protected]

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Product data sheet Rev. 6 — 6 March 2014 15 of 16

Nexperia BZX84 series
Voltage regulator diodes

15. Contents
1 Product profile . . . . . . . . . . . . . . . . . . . . . . . . . . 1
1.1 General description . . . . . . . . . . . . . . . . . . . . . 1
1.2 Features and benefits . . . . . . . . . . . . . . . . . . . . 1
1.3 Applications . . . . . . . . . . . . . . . . . . . . . . . . . . . 1
1.4 Quick reference data . . . . . . . . . . . . . . . . . . . . 1
2 Pinning information . . . . . . . . . . . . . . . . . . . . . . 2
3 Ordering information . . . . . . . . . . . . . . . . . . . . . 2
4 Marking . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2
5 Limiting values. . . . . . . . . . . . . . . . . . . . . . . . . . 4
6 Thermal characteristics . . . . . . . . . . . . . . . . . . 4
7 Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . 4
8 Test information . . . . . . . . . . . . . . . . . . . . . . . . 10
8.1 Quality information . . . . . . . . . . . . . . . . . . . . . 10
9 Package outline . . . . . . . . . . . . . . . . . . . . . . . . 11
10 Packing information . . . . . . . . . . . . . . . . . . . . 11
11 Soldering . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12
12 Revision history . . . . . . . . . . . . . . . . . . . . . . . . 13
13 Legal information. . . . . . . . . . . . . . . . . . . . . . . 14
13.1 Data sheet status . . . . . . . . . . . . . . . . . . . . . . 14
13.2 Definitions . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14
13.3 Disclaimers . . . . . . . . . . . . . . . . . . . . . . . . . . . 14
13.4 Trademarks. . . . . . . . . . . . . . . . . . . . . . . . . . . 15
14 Contact information. . . . . . . . . . . . . . . . . . . . . 15
15 Contents . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 16

© Nexperia B.V. 2017. All rights reserved

For more information, please visit: http://www.nexperia.com
For sales office addresses, please send an email to: [email protected]
Date of release: 06 March 2014
Mouser Electronics

Authorized Distributor

Click to View Pricing, Inventory, Delivery & Lifecycle Information:

Nexperia:
BZX84-B16VL
 FMMT2222 SOT23 NPN SILICON PLANAR FMMT2222
FMMT2222A SWITCHING TRANSISTORS FMMT2222A
ISSUE 3 – FEBRUARY 1996
FEATURES
ELECTRICAL CHARACTERISTICS (at Tamb = 25°C unless otherwise stated).
* Fast switching
PARAMETER SYMBOL FMMT2222 FMMT2222A UNIT CONDITIONS.
PARTMARKING DETAILS E
MIN. MAX. MIN. MAX. C
Transition fT 250 300 MHz IC=20mA, VCE=20V FMMT2222 – 1BZ FMMT2222A – 1P
Frequency f=100MHz FMMT2222R – 2P FMMT2222AR – 3P
Output Capacitance Cobo 8 8 pF VCB=10V, IE=0, COMPLEMENTARY TYPES B
f=140KHz FMMT2222 – FMMT2907
Input Capacitance Cibo 30 25 pF VEB=0.5V, IC=0 FMMT2222A – FMMT2907A
f=140KHz
Delay Time td 10 10 ns VCC=30V, VBE(off)=0.5V ABSOLUTE MAXIMUM RATINGS.
Rise Time tr 25 25 ns IC=150mA, IB1=15mA PARAMETER SYMBOL FMMT2222 FMMT2222A UNIT
(See Delay Test Circuit)
Storage Time ts 225 225 ns VCC=30V, IC=150mA Collector-Base Voltage VCBO 60 75 V
Fall Time tf 60 60 ns IB1= IB2=15mA Collector-Emitter Voltage VCEO 30 40 V
(See Storage Test
Circuit) Emitter-Base Voltage VEBO 5 6 V
Continuous Collector Current IC 600 mA
DELAY AND RISE – TEST CIRCUIT Power Dissipation at Tamb=25°C Ptot 330 mW
+30V Operating and Storage Temperature Range Tj:Tstg -55 to +150 °C

Generator rise time <2ns ELECTRICAL CHARACTERISTICS (at Tamb = 25°C unless otherwise stated).
Pulse width (t1)<200ns 200Ω PARAMETER SYMBOL FMMT2222 FMMT2222A UNIT CONDITIONS.
Duty cycle = 2% MIN. MAX. MIN. MAX.
Collector-Base V(BR)CBO 60 75 V IC=10µA, IE=0
Breakdown Voltage
619Ω
9.9V Collector-Emitter V(BR)CEO 30 40 V IC=10mA, IB=0
Breakdown Voltage
Scope:
Emitter-Base V(BR)EBO 5 6 V IE=10µA, IC=0
0 Rin > 100 kΩ Breakdown Voltage
0.5V
Cin < 12 pF Collector Cut-Off ICBO 10 nA VCB=50V, IE=0
Rise Time < 5 ns Current 10 µA VCB=60V, IE=0
10 nA VCB=50V, IE=0, Tamb=150°C
10 µA VCB=60V, IE=0, Tamb=150°C
STORAGE TIME AND FALL TIME – TEST CIRCUIT Emitter Cut-Off IEBO 10 10 nA VEB=3V, IC=0
Current
+30V
Collector-Emitter ICEX 10 10 nA VCE=60V, VEB(off)=3V
=100µs Cut-Off Current
<5ns 200Ω
Collector-Emitter VCE(sat) 0.3 0.3 V IC=150mA, IB=15mA*
+16.2 V Saturation Voltage 1.0 1.0 V IC=500mA, IB=50mA*
Base-Emitter VBE(sat) 0.6 2.0 0.6 1.2 V IC=150mA, IB=15mA*
Saturation Voltage 2.6 2.0 V IC=500mA, IB=50mA*
0 1KΩ Static Forward hFE 35 35 IC=0.1mA, VCE=10V*
Current Transfer 50 50 IC=1mA, VCE=10V
Scope: Ratio 75 75 IC=10mA, VCE=10V*
R > 100 kΩ
in 35 35 IC=10mA, VCE=10V, Tamb=-55°C
1N916 C < 12 pF
in 100 300 100 300 IC=150mA, VCE=10V*
-13.8 V 50 50 IC=150mA, VCE=1V*
Rise Time < 5 ns
-3V 30 40 IC=500mA, VCE=10V*
=500µs
*Measured under pulsed conditions. Pulse width=300µs. Duty cycle ≤ 2%
Duty cycle = 2% Spice parameter data is available upon request for this device
 FMMT2222 SOT23 NPN SILICON PLANAR FMMT2222
FMMT2222A SWITCHING TRANSISTORS FMMT2222A
ISSUE 3 – FEBRUARY 1996
FEATURES
ELECTRICAL CHARACTERISTICS (at Tamb = 25°C unless otherwise stated).
* Fast switching
PARAMETER SYMBOL FMMT2222 FMMT2222A UNIT CONDITIONS.
PARTMARKING DETAILS E
MIN. MAX. MIN. MAX. C
Transition fT 250 300 MHz IC=20mA, VCE=20V FMMT2222 – 1BZ FMMT2222A – 1P
Frequency f=100MHz FMMT2222R – 2P FMMT2222AR – 3P
Output Capacitance Cobo 8 8 pF VCB=10V, IE=0, COMPLEMENTARY TYPES B
f=140KHz FMMT2222 – FMMT2907
Input Capacitance Cibo 30 25 pF VEB=0.5V, IC=0 FMMT2222A – FMMT2907A
f=140KHz
Delay Time td 10 10 ns VCC=30V, VBE(off)=0.5V ABSOLUTE MAXIMUM RATINGS.
Rise Time tr 25 25 ns IC=150mA, IB1=15mA PARAMETER SYMBOL FMMT2222 FMMT2222A UNIT
(See Delay Test Circuit)
Storage Time ts 225 225 ns VCC=30V, IC=150mA Collector-Base Voltage VCBO 60 75 V
Fall Time tf 60 60 ns IB1= IB2=15mA Collector-Emitter Voltage VCEO 30 40 V
(See Storage Test
Circuit) Emitter-Base Voltage VEBO 5 6 V
Continuous Collector Current IC 600 mA
DELAY AND RISE – TEST CIRCUIT Power Dissipation at Tamb=25°C Ptot 330 mW
+30V Operating and Storage Temperature Range Tj:Tstg -55 to +150 °C

Generator rise time <2ns ELECTRICAL CHARACTERISTICS (at Tamb = 25°C unless otherwise stated).
Pulse width (t1)<200ns 200Ω PARAMETER SYMBOL FMMT2222 FMMT2222A UNIT CONDITIONS.
Duty cycle = 2% MIN. MAX. MIN. MAX.
Collector-Base V(BR)CBO 60 75 V IC=10µA, IE=0
Breakdown Voltage
619Ω
9.9V Collector-Emitter V(BR)CEO 30 40 V IC=10mA, IB=0
Breakdown Voltage
Scope:
Emitter-Base V(BR)EBO 5 6 V IE=10µA, IC=0
0 Rin > 100 kΩ Breakdown Voltage
0.5V
Cin < 12 pF Collector Cut-Off ICBO 10 nA VCB=50V, IE=0
Rise Time < 5 ns Current 10 µA VCB=60V, IE=0
10 nA VCB=50V, IE=0, Tamb=150°C
10 µA VCB=60V, IE=0, Tamb=150°C
STORAGE TIME AND FALL TIME – TEST CIRCUIT Emitter Cut-Off IEBO 10 10 nA VEB=3V, IC=0
Current
+30V
Collector-Emitter ICEX 10 10 nA VCE=60V, VEB(off)=3V
=100µs Cut-Off Current
<5ns 200Ω
Collector-Emitter VCE(sat) 0.3 0.3 V IC=150mA, IB=15mA*
+16.2 V Saturation Voltage 1.0 1.0 V IC=500mA, IB=50mA*
Base-Emitter VBE(sat) 0.6 2.0 0.6 1.2 V IC=150mA, IB=15mA*
Saturation Voltage 2.6 2.0 V IC=500mA, IB=50mA*
0 1KΩ Static Forward hFE 35 35 IC=0.1mA, VCE=10V*
Current Transfer 50 50 IC=1mA, VCE=10V
Scope: Ratio 75 75 IC=10mA, VCE=10V*
R > 100 kΩ
in 35 35 IC=10mA, VCE=10V, Tamb=-55°C
1N916 C < 12 pF
in 100 300 100 300 IC=150mA, VCE=10V*
-13.8 V 50 50 IC=150mA, VCE=1V*
Rise Time < 5 ns
-3V 30 40 IC=500mA, VCE=10V*
=500µs
*Measured under pulsed conditions. Pulse width=300µs. Duty cycle ≤ 2%
Duty cycle = 2% Spice parameter data is available upon request for this device
www.s-manuals.com
 FMMT2907 SOT23 PNP SILICON PLANAR FMMT2907
FMMT2907A SWITCHING TRANSISTOR FMMT2907A
ISSUE 3 – FEBRUARY 1996 ✪
SWITCHING CHARACTERISTICS (at Tamb = 25°C unless otherwise stated). FEATURES
PARAMETER SYMBOL FMMT2907 FMMT2907A UNIT CONDITIONS. * Fast switching
TYP. MAX. TYP. MAX. COMPLIMENTARY TYPES - FMMT2907 – FMMT2222 E
C
- FMMT2907A – FMMT2222A
Output Capacitance Cobo 8 8 pF VCB=-10V, IE=0,
f=100KHz
PARTMARKING DETAIL - FMMT2907 – 2BZ B
Input Capacitance Cibo 30 30 pF VBE=-2V, IC=0
f=100KHz FMMT2907A – 2F
FMMT2907R – 4P
Turn On Time ton 26 50 26 50 ns VCE=-30V SOT23
IC=-150mA, IB1=-15mA FMMT2907AR – 5P
(See Turn On Circuit)
ABSOLUTE MAXIMUM RATINGS.
Turn Off Time toff 70 110 70 110 ns VCE=-6V, IC=-150mA
PARAMETER SYMBOL FMMT2907 FMMT2907A UNIT
IB1= IB2=-15mA
(See Turn Off Circuit) Collector-Base Voltage VCBO -60 V
Collector-Emitter Voltage VCEO -40 -60 V
Emitter-Base Voltage VEBO -5 V
TURN ON TIME – TEST CIRCUIT Continuous Collector Current IC -600 mA
Power Dissipation at Tamb=25°C Ptot 330 mW
-30V

Operating and Storage Temperature Range Tj:Tstg -55 to +150 °C

200Ω

ELECTRICAL CHARACTERISTICS (at Tamb = 25°C unless otherwise stated).

PARAMETER SYMBOL FMMT2907 FMMT2907A UNIT CONDITIONS.
Scope: MIN. MAX. MIN. MAX.
1KΩ
Rise Time < 5 ns
0 Collector-Base V(BR)CBO -40 -60 V IC=-10µA, IE=0
Breakdown Voltage
-16V
50Ω Collector-Emitter V(BR)CEO -60 -60 V IC=-10mA, IB=0*
Pulse width Breakdown Voltage
<200ns Emitter-Base V(BR)EBO -5 -5 V IE=-10µA, IC=0
Breakdown Voltage
Collector-Emitter ICEX -50 -50 nA VCE=-30V, VBE=-0.5V
Cut-Off Current
TURN OFF TIME – TEST CIRCUIT
15V -6V Collector Cut-Off ICBO -20 -10 nA VCB=-50V, IE=0
Current -20 -10 µA VCB=-50V, IE=0, Tamb=150°C
Base Cut-Off Current IB -50 -50 nA VCE=-30V, VBE=-0.5V
1KΩ 37Ω
Collector-Emitter VCE(sat) -0.4 -0.4 V IC=-150mA, IB=-15mA*
Saturation Voltage -1.6 -1.6 V IC=-500mA, IB=-50mA*
Base-Emitter VBE(sat) -1.3 -1.3 V IC=-150mA, IB=-15mA*
Scope: Saturation Voltage -2.6 -2.6 V IC=-500mA, IB=-50mA*
1KΩ
Rise Time < 5 ns
0 Static Forward hFE 35 75 IC=-0.1mA, VCE=-10V
Current Transfer 50 100 IC=-1mA, VCE=-10V
-30V Ratio 75 100 IC=-10mA, VCE=-10V
50Ω
100 300 100 300 IC=-150mA, VCE=-10V*
Pulse width 30 50 IC=-500mA, VCE=-10V*
<200ns
Transition fT 200 200 MHz IC=-50mA, VCE=-20V
Frequency f=100MHz
*Measured under pulsed conditions. Pulse width=300µs. Duty cycle ≤ 2%
PAGE NUMBER PAGE NUMBER
 FMMT2907 SOT23 PNP SILICON PLANAR FMMT2907
FMMT2907A SWITCHING TRANSISTOR FMMT2907A
ISSUE 3 – FEBRUARY 1996 ✪
SWITCHING CHARACTERISTICS (at Tamb = 25°C unless otherwise stated). FEATURES
PARAMETER SYMBOL FMMT2907 FMMT2907A UNIT CONDITIONS. * Fast switching
TYP. MAX. TYP. MAX. COMPLIMENTARY TYPES - FMMT2907 – FMMT2222 E
C
- FMMT2907A – FMMT2222A
Output Capacitance Cobo 8 8 pF VCB=-10V, IE=0,
f=100KHz
PARTMARKING DETAIL - FMMT2907 – 2BZ B
Input Capacitance Cibo 30 30 pF VBE=-2V, IC=0
f=100KHz FMMT2907A – 2F
FMMT2907R – 4P
Turn On Time ton 26 50 26 50 ns VCE=-30V SOT23
IC=-150mA, IB1=-15mA FMMT2907AR – 5P
(See Turn On Circuit)
ABSOLUTE MAXIMUM RATINGS.
Turn Off Time toff 70 110 70 110 ns VCE=-6V, IC=-150mA
PARAMETER SYMBOL FMMT2907 FMMT2907A UNIT
IB1= IB2=-15mA
(See Turn Off Circuit) Collector-Base Voltage VCBO -60 V
Collector-Emitter Voltage VCEO -40 -60 V
Emitter-Base Voltage VEBO -5 V
TURN ON TIME – TEST CIRCUIT Continuous Collector Current IC -600 mA
Power Dissipation at Tamb=25°C Ptot 330 mW
-30V

Operating and Storage Temperature Range Tj:Tstg -55 to +150 °C

200Ω

ELECTRICAL CHARACTERISTICS (at Tamb = 25°C unless otherwise stated).

PARAMETER SYMBOL FMMT2907 FMMT2907A UNIT CONDITIONS.
Scope: MIN. MAX. MIN. MAX.
1KΩ
Rise Time < 5 ns
0 Collector-Base V(BR)CBO -40 -60 V IC=-10µA, IE=0
Breakdown Voltage
-16V
50Ω Collector-Emitter V(BR)CEO -60 -60 V IC=-10mA, IB=0*
Pulse width Breakdown Voltage
<200ns Emitter-Base V(BR)EBO -5 -5 V IE=-10µA, IC=0
Breakdown Voltage
Collector-Emitter ICEX -50 -50 nA VCE=-30V, VBE=-0.5V
Cut-Off Current
TURN OFF TIME – TEST CIRCUIT
15V -6V Collector Cut-Off ICBO -20 -10 nA VCB=-50V, IE=0
Current -20 -10 µA VCB=-50V, IE=0, Tamb=150°C
Base Cut-Off Current IB -50 -50 nA VCE=-30V, VBE=-0.5V
1KΩ 37Ω
Collector-Emitter VCE(sat) -0.4 -0.4 V IC=-150mA, IB=-15mA*
Saturation Voltage -1.6 -1.6 V IC=-500mA, IB=-50mA*
Base-Emitter VBE(sat) -1.3 -1.3 V IC=-150mA, IB=-15mA*
Scope: Saturation Voltage -2.6 -2.6 V IC=-500mA, IB=-50mA*
1KΩ
Rise Time < 5 ns
0 Static Forward hFE 35 75 IC=-0.1mA, VCE=-10V
Current Transfer 50 100 IC=-1mA, VCE=-10V
-30V Ratio 75 100 IC=-10mA, VCE=-10V
50Ω
100 300 100 300 IC=-150mA, VCE=-10V*
Pulse width 30 50 IC=-500mA, VCE=-10V*
<200ns
Transition fT 200 200 MHz IC=-50mA, VCE=-20V
Frequency f=100MHz
*Measured under pulsed conditions. Pulse width=300µs. Duty cycle ≤ 2%
PAGE NUMBER PAGE NUMBER
www.s-manuals.com
Programmable Shunt
Regulator

KA431S, KA431SA,
KA431SL
Description
www.onsemi.com
The KA431S / KA431SA / KA431SL are three−terminal adjustable
regulator series with a guaranteed thermal stability over the operating
temperature range. The output voltage can be set to any value between
VREF (approximately 2.5 V) and 36 V with two external resistors. 3
MF MF2
These devices have a typical dynamic output impedance of 0.2 W. 1. Cathode 1. Ref
Active output circuitry provides a sharp turn−on characteristic, 2. Ref 2. Cathode
1 2 3. Anode 3. Anode
making these devices excellent replacement for zener diodes in many
applications. SOT23−FL3L
CASE 318AB

Features
• Programmable Output Voltage to 36 V DEVICE MARKING INFORMATION

• Low Dynamic Output Impedance 0.2 W (Typical) See general marking information in the device
marking section on page 2 of this data sheet.
• Sink Current Capability: 1.0 to 100 mA
• Equivalent Full−Range Temperature Coefficient of 50 ppm/°C
(Typical) ORDERING INFORMATION
• Temperature Compensated for Operation Over Full Rated Operating
See detailed ordering and shipping information on
Temperature Range
page 6 of this data sheet.
• Low Output Noise Voltage
• Fast Turn−on Response
• These Devices are Pb−Free and Halogen Free

REFERENCE + CATHODE

2.5 Vref

ANODE
CATHODE (K)

REFERENCE (R)

ANODE(A)

Figure 1. Block Diagram

© Semiconductor Components Industries, LLC, 2002 1 Publication Order Number:

March, 2021 − Rev. 7 KA431SL/D
 KA431S, KA431SA, KA431SL

MARKING INFORMATION

MF − 43A 43B 43C

2% tolerance 1% tolerance 0.5% tolerance

MF2 − 43D 43E 43F

2% tolerance 1% tolerance 0.5% tolerance

Figure 2. Top Mark (per package)

ABSOLUTE MAXIMUM RATINGS

TA = 25°C unless otherwise noted
Symbol Parameter Value Unit
VKA Cathode Voltage 37 V
IKA Cathode Current Range (Continuous) −100 ~ +150 mA
IREF Reference Input Current Range −0.05 ~ +10 mA
RθJA Thermal Resistance Junction−Air (Note 1) (Note 2) 350 °C/W
MF Suffix Package
IREF Power Dissipation (Note 3) (Note 4) 350 mW
MF Suffix Package
TJ Junction Temperature 150 _C
TOPR Operating Temperature Range −25 ~ +85 _C
TSTG Storage Temperature Range −65 ~ +150 _C
Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality
should not be assumed, damage may occur and reliability may be affected.
1. Thermal resistance test board:
Size: 1.6 mm x 76.2 mm x 114.3 mm (1S0P))
JEDEC Standard: JESD51−3, JESD51−7
2. Assume no ambient airflow.
3. TJMAX = 150°C; Ratings apply to ambient temperature at 25°C.
4. Power dissipation calculation: PD = (TJ − TA) / RθJA.

RECOMMENDED OPERATING RANGES

Symbol Parameter Min. Max. Unit
VKA Cathode Voltage VREF 36 V
IKA Cathode Current 1 100 mA
Functional operation above the stresses listed in the Recommended Operating Ranges is not implied. Extended exposure to stresses beyond
the Recommended Operating Ranges limits may affect device reliability.

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2
 KA431S, KA431SA, KA431SL

ELECTRICAL CHARACTERISTICS (Note 5)

Values are at TA = 25°C unless otherwise noted

KA431S KA431SA KA431SL

Symbol Parameter Conditions Min. Typ. Max. Min. Typ. Max. Min. Typ. Max. Unit
VREF Reference Input VKA = VREF, IKA = 10 mA 2.450 2.500 2.550 2.470 2.495 2.520 2.482 2.495 2.508 V
Voltage
ΔVREF/ΔT Deviation of VKA = VREF, IKA = 10 mA, − 4.5 17.0 − 4.5 17.0 − 4.5 17.0 mV
Reference Input TMIN ≤ TA ≤ TMAX
Voltage Over−
Temperature
ΔVREF/ΔVKA Ratio of Change IKA = ΔVKA = − −1.0 −2.7 − −1.0 −2.7 − −1.0 −2.7 mV/V
in Reference 10 mA 10 V - VREF
Input Voltage
to the Change in ΔVKA = − −0.5 −2.0 − −0.5 −2.0 − −0.5 −2.0
Cathode Voltage 36 V - 10 V

IREF Reference Input IKA = 10 mA, − 1.5 4.0 − 1.5 4.0 − 1.5 4.0 mA
Current R1 = 10 kW, R2 = ∞
ΔIREF/ΔT Deviation of IKA = 10 mA, − 0.4 1.2 − 0.4 1.2 − 0.4 1.2 mA
Reference Input R1 = 10 kW, R2 = ∞
Current Over Full TA = Full Range
Temperature
Range
IKA(MIN) Minimum VKA = VREF − 0.45 1.00 − 0.45 1.00 − 0.45 1.00 mA
Cathode Current
for Regulation
IKA(OFF) Off-Stage VKA = 36 V, VREF = 0 − 0.05 1.00 − 0.05 1.00 − 0.05 1.00 mA
Cathode Current
ZKA Dynamic VKA = VREF, − 0.15 0.50 − 0.15 0.50 − 0.15 0.50 W
Impedance IKA = 1 to 100 mA,
f ≥ 1.0 kHz
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
5. TMIN = −25°C, TMAX = +85°C

TEST CIRCUITS

INPUT VKA INPUT VKA

IKA IKA
R1 IREF

KA431S KA431S
R2 VREF
VREF
VKA = VREF (1 + R1/R2) + IREF R1

Figure 3. Test Circuit for VKA = VREF Figure 4. Test Circuit for VKA . VREF

INPUT VKA
IKA(OFF)

KA431S

Figure 5. Test Circuit for IKA(OFF)

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3
 KA431S, KA431SA, KA431SL

TYPICAL APPLICATIONS

VO + 1 ) ǒ R1
R2
Ǔ
V ref ǒ
VO + 1 )
R1
R2
Ǔ
V ref

VI VO VI
IN
R1 KA70805 OUT VO
COMMON
VREF R1

R2 KA431S
R2
KA431S

Figure 6. Shunt Regulator Figure 7. Output Control for Three−Terminal Fixed

Regulator

VO + 1 ) ǒ R1
R2
Ǔ
V ref IO +
V REF
R CL

RCL IO
VI VO VI

R1

KA431S
R2
KA431S

Figure 8. High Current Shunt Regulator Figure 9. Current limit or Current Source

V REF
IO +
RS

VI IO

KA431S RS

Figure 10. Constant−Current Sink

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4
 KA431S, KA431SA, KA431SL

TYPICAL CHARACTERISTICS

150 800
VKA = VREF VKA = VREF
IK − Cathode Current (mA)

TA = 25°C

IKA − Cathode Current (mA)

TA = 25°C
100 600

50 400
IKA(MIN)

0 200

−50 0

−100 −200
−2 −1 0 1 2 3 −1 0 1 2 3
VKA − Cathode Voltage (V) VKA − Cathode Voltage (V)
Figure 11. Cathode Current vs. Cathode Voltage Figure 12. Cathode Current vs. Cathode Voltage

0.20 3.5
Ioff − Off−State Cathode Current (mA)

Iref − Reference Input Current (mA)

0.18
3.0
0.16
0.14 2.5

0.12 2.0
0.10
1.5
0.08
0.06 1.0
0.04
0.5
0.02
0.00 0.0
−50 −25 0 25 50 75 100 125 150 −50 −25 0 25 50 75 100 125

TA − Ambient Temperature (5C) TA − Ambient Temperature (5C)

Figure 13. OFF−State Cathode Current vs. Figure 14. Reference Input Current vs. Ambient
Ambient Temperature Temperature

60 6
TA = 25°C TA = 25°C
Open Loop Voltage Gain (dB)

50 IKA = 10 mA 5 INPUT

40
Voltage Swing (V)

4
30
3 OUTPUT
20
2
10

0 1

−10 0
1k 10k 100k 1M 10M 0 4 8 12 16 20

Frequency (Hz) Time (ms)

Figure 15. Frequency vs. Small Signal Figure 16. Pulse Response
Voltage Amplification

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5
 KA431S, KA431SA, KA431SL

TYPICAL CHARACTERISTICS (Continued)

140 5
A: VKA = Vref
120 B: VKA = 5.0 V
IK − Cathode Current (mA)

A @ IK = 10 mA 4
100 TA = 25°C

Current (mA)
80 3

60
2
40
B 1
20

0 0
10p 1n 10n 100n 1m 10m 0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0
CL − Load Capacitance Anode−Reference Voltage (V)
Figure 17. Stability Boundary Conditions Figure 18. Anode−Reference Diode Curve
5 2.51

VREF, Reference Input Voltage (V)

4 2.50
Current (mA)

3 2.49

2 2.48

1 2.47

0 2.46
0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 −50 −25 0 25 50 75 100 125

Reference−Cathode Voltage (V) TA , Ambient Temperature (5C)

Figure 19. Reference−Cathode Diode Curve Figure 20. Reference Input Voltage vs. Ambient
Temperature

ORDERING INFORMATION
Output Voltage Operating
Part Number Tolerance Temperature Range Top Mark Package Shipping†
KA431SMFTF 2% −25 to +85°C 43A SOT23−FL3L 3000 / Tape and Reel
(Pb−Free)
KA431SMF2TF 43D
KA431SAMFTF 1% 43B
KA431SAMF2TF 43E
KA431SLMFTF 0.5% 43C
KA431SLMF2TF 43F
†For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging
Specification Brochure, BRD8011/D.

www.onsemi.com
6
MECHANICAL CASE OUTLINE
PACKAGE DIMENSIONS

SOT23−3L
CASE 318AB
ISSUE A
DATE 14 DEC 2021

GENERIC
MARKING DIAGRAM*

XXXM
*This information is generic. Please refer to
1 device data sheet for actual part marking.
Pb−Free indicator, “G” or microdot “G”, may
XXX = Specific Device Code or may not be present. Some products may
M = Date Code not follow the Generic Marking.

Electronic versions are uncontrolled except when accessed directly from the Document Repository.
DOCUMENT NUMBER: 98AON27911H Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red.

DESCRIPTION: SOT23−3L PAGE 1 OF 1

onsemi and are trademarks of Semiconductor Components Industries, LLC dba onsemi or its subsidiaries in the United States and/or other countries. onsemi reserves
the right to make changes without further notice to any products herein. onsemi makes no warranty, representation or guarantee regarding the suitability of its products for any particular
purpose, nor does onsemi assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation
special, consequential or incidental damages. onsemi does not convey any license under its patent rights nor the rights of others.

© Semiconductor Components Industries, LLC, 2018 www.onsemi.com

 onsemi, , and other names, marks, and brands are registered and/or common law trademarks of Semiconductor Components Industries, LLC dba “onsemi” or its affiliates
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A listing of onsemi’s product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent−Marking.pdf. onsemi reserves the right to make changes at any time to any
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◊
 SEMICONDUCTOR KTD1624
TECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTOR

VOLTAGE REGULATORS, RELAY DRIVERS

LAMP DRIVERS, ELECTRICAL EQUIPMENT
A
C
FEATURES
H
ᴌAdoption of MBIT processes. G

ᴌLow collector-to-emitter saturation voltage.

B
ᴌFast switching speed.

E
DIM MILLIMETERS
ᴌLarge current capacity and wide ASO. A 4.70 MAX
D D B _ 0.20
2.50 +
ᴌComplementary to KTB1124.
K C 1.70 MAX
D 0.45+0.15/-0.10
F F
E 4.25 MAX
F _ 0.10
1.50 +
G 0.40 TYP
1 2 3 H 1.75 MAX
MAXIMUM RATING (Ta=25ᴱ) J 0.75 MIN
K 0.5+0.10/-0.05

CHARACTERISTIC SYMBOL RATING UNIT

1. BASE
Collector-Base Voltage VCBO 60 V
2. COLLECTOR (HEAT SINK)

Vollector-Emitter Voltage VCEO 50 V 3. EMITTER

Emitter-Base Voltage VEBO 6 V

Collector Current IC 3 A
SOT-89
Collector Current(Pulse) ICP 6 A
PC 500 mW
Collector Power Dissipation
PC* 1 W Marking
Junction Temperature Tj 150 ᴱ h FE Rank Lot No.
Storage Temperature Range Tstg -55ᴕ150 ᴱ
* : Package mounted on ceramic substrate(250mm2ᴧ0.8t)
Type Name
Y

ELECTRICAL CHARACTERISTICS (Ta=25ᴱ)

CHARACTERISTIC SYMBOL TEST CONDITION MIN. TYP. MAX. UNIT.
Collector Cut-off Current ICBO VCB=40V, IE=0 - - 1 ὧ
Emitter Cut-off Current IEBO VEB=4V, IC=0 - - 1 ὧ
hFE(1) (Note) VCE=2V, IC=100Ὠ 100 - 400
DC Current Gain
hFE (2) VCE=2V, IC=3A 35 - -
Collector-Emitter Saturation Voltage VCE(sat) IC=2A, IB=100Ὠ - 0.19 0.5 V
Base-Emitter Saturation Voltage VBE(sat) IC=2A, IB=100Ὠ - 0.94 1.2 V
Transition Frequency fT VCE=10V, IC=50Ὠ - 150 - ὲ
Collector Output Capacitance Cob VCB=10V, f=1ὲ, IE=0 - 25 - ὸ

PW=20µs
Turn-on Time ton DC <
= 1%
I B1 - 70 -
R8
INPUT I B2 25
Switching VR
Storage Time tstg 50 - 650 - nS
Time
100µ 470µ

Fall Time tf -5V 25V - 35 -

10IB1=-10I B2 =I C =1A

Note : hFE (1) Classification A:100ᴕ200, B:140ᴕ280, C:200ᴕ400

2001. 12. 6 Revision No : 4 1/3

 KTD1624

I C - V CE I C - V BE
5.0 3.2
100mA 80mA VCE =2V
COLLECOTR CURRENT I C (A)

COLLECTOR CURRENT I C (A)

60mA
2.8
4.0
40mA 2.4
2.0
3.0 20mA

5 C
1.6

25 C
C
Ta=7
10mA

-25
2.0 1.2
5mA 0.8
1.0
0.4
I B =0
0 0
0 0.4 0.8 1.2 1.6 2.0 0 0.2 0.4 0.6 0.8 1.0 1.2

COLLECTOR-EMITTER VOLTAGE VCE (V) BASE EMITTER VOLTAGE V BE (V)

I C - V CE h FE - I C
2.0 1k
8mA VCE =2V
1.8
COLLECTOR CURRENT I C (A)

7mA 500
DC CURRENT GAIN h FE

1.6
6mA 300
1.4
5mA
1.2
4mA
1.0 100
0.8 3mA
50
0.6 2mA
30
0.4 1mA
0.2
I B =0
0 10
0 2 4 6 8 10 12 14 16 18 20 0.01 0.03 0.1 0.3 1 3 10

COLLECTOR EMITTER VOLTAGE V CE (V) COLLECTOR CURRENT I C (A)

V BE(sat) - I C V CE(sat) - I C
10 1K
COLLECTOR EMITTER SATURATION

I C /I B =20 I C /I B =20
BASE-EMITTER SATURATION

5 500
VOLTAGE VBE(sat) (V)

VOLTAGE VCE(sat) (mV)

3 300

1 Ta=-25 C
100
Ta=75 C
0.5 50 Ta=75 C
Ta=25 C
0.3 Ta=25 C
30

Ta=-25 C
0.1 10
0.01 0.03 0.1 0.3 1 3 10 0.01 0.03 0.1 0.3 1 3 10
COLLECTOR CURRENT I C (A) COLLECTOR CURRENT I C (A)

2001. 12. 6 Revision No : 4 2/3

 KTD1624

C ob - V CB f T - IC

GAIN-BANDWIDTH PRODUCT f T (MHz)

100 1k
OUTPUW CAPACITANCE C ob (pF)

f=1MHz V CE =10V
50 500
30 300

10 100

5 50
3 30

1 10
1 3 5 10 30 50 100 200 0.01 0.03 0.1 0.3 1 3 10

COLLECTOR BASE VOLTAGE V CB (V) COLLECTOR CURRENT I C (A)

P C - Ta SAFE OPERATING AREA

COLLECTOR POWER DISSIPATION PC (W)

1.2 10
1 MOUNTED ON CERAMIC I CP
1 SUBSTRATE 5

10

1m s
1.0 (250mm 2 x0.8t)
COLLECTOR CURRENT I C (A)

I C MAX.

0m

s
10
2 Ta=25 C 3

s
m
0.8 D
C
O
1 pe
ra
0.6 2
tio
n
0.5
0.4 0.3

0.2
0.1
0 0.05
0 20 40 60 80 100 120 140 160 MOUNTED ON CERAMIC
0.03 BOARD (250mm 2 x0.8t)
Ta=25 C ONE PULSE
AMBIENT TEMPERATURE Ta ( C) 0.02
0.1 0.3 1 3 10 30 100

COLLECTOR EMITTER VOLTAGE V CE (V)

2001. 12. 6 Revision No : 4 3/3

 JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD

SOT-23 Plastic-Encapsulate Transistors

MMBTA44 TRANSISTOR (NPN) SOT–23

FEATURES
 High Collector-Emitter Voltage
 Complement to MMBTA94
MARKING: 3D
1. BASE

MAXIMUM RATINGS (Ta=25℃ unless otherwise noted) 2. EMITTER

Symbol Parameter Value Unit 3. COLLECTOR

VCBO Collector-Base Voltage 500 V

VCEO Collector-Emitter Voltage 400 V
VEBO Emitter-Base Voltage 6 V
IC Collector Current 100 mA
PC Collector Power Dissipation 350 mW
RΘJA Thermal Resistance From Junction To Ambient 357 ℃/W
Tj Junction Temperature 150 ℃
Tstg Storage Temperature -55～+150 ℃

ELECTRICAL CHARACTERISTICS (Ta=25℃ unless otherwise specified)

Parameter Symbol Test conditions Min Typ Max Unit
Collector-base breakdown voltage V(BR)CBO IC=100µA, IE=0 500 V
Collector-emitter breakdown voltage V(BR)CEO* IC=1mA, IB=0 400 V
Emitter-base breakdown voltage V(BR)EBO IE=10µA, IC=0 6 V
Collector cut-off current ICBO VCB=400V, IE=0 0.1 µA
Emitter cut-off current IEBO VEB=4V, IC=0 0.1 µA
hFE(1) * VCE=10V, IC=1mA 40
hFE(2) * VCE=10V, IC=10mA 50 200
DC current gain
hFE(3) * VCE=10V, IC=50mA 45
hFE(4) * VCE=10V, IC=100mA 40
VCE(sat)1* IC=1mA, IB=0.1mA 0.4 V
Collector-emitter saturation voltage VCE(sat)2* IC=10mA, IB=1mA 0.5 V
VCE(sat)3* IC=50mA, IB=5mA 0.75 V
Base-emitter saturation voltage VBE(sat)* IC=10mA, IB=1mA 0.75 V
Collector output capacitance Cob VCB=20V, IE=0, f=1MHz 7 pF
Emitter input capacitance Cib VEB=0.5V, IC=0, f=1MHz 130 pF
*Pulse test: pulse width ≤300μs, duty cycle≤ 2.0%.

A,Oct,2010
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