MJW21195 (PNP)

MJW21196 (NPN)

Silicon Power Transistors

The MJW21195 and MJW21196 utilize Perforated Emitter
technology and are specifically designed for high power audio output,
disk head positioners and linear applications.
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Features
• Total Harmonic Distortion Characterized 16 AMPERES
• High DC Current Gain − hFE = 20 Min @ IC = 8 Adc COMPLEMENTARY
• Excellent Gain Linearity SILICON POWER TRANSISTORS
• High SOA: 2.25 A, 80 V, 1 Second 250 VOLTS, 200 WATTS
• Pb−Free Packages are Available*

MAXIMUM RATINGS
Rating Symbol Value Unit
Collector−Emitter Voltage VCEO 250 Vdc
Collector−Base Voltage VCBO 400 Vdc 1
2
Emitter−Base Voltage VEBO 5.0 Vdc 3 TO−247
CASE 340L
Collector−Emitter Voltage − 1.5 V VCEX 400 Vdc
Collector Current − Continuous IC 16 Adc
Collector Current − Peak (Note 1) 30
MARKING DIAGRAM
Base Current − Continuous IB 5.0 Adc
Total Power Dissipation @ TC = 25°C PD 200 W
Derate Above 25°C 1.43 W/°C

Operating and Storage Junction TJ, Tstg −    65 to +150 °C MJW2119x

Temperature Range
AYWWG
THERMAL CHARACTERISTICS
Characteristic Symbol Max Unit
Thermal Resistance, Junction−to−Case RqJC 0.7 °C/W 1 BASE 3 EMITTER
Thermal Resistance, Junction−to−Ambient RqJA 40 °C/W 2 COLLECTOR
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended x = 5 or 6
Operating Conditions is not implied. Extended exposure to stresses above the A = Assembly Location
Recommended Operating Conditions may affect device reliability. Y = Year
1. Pulse Test: Pulse Width = 5 ms, Duty Cycle ≤ 10%. WW = Work Week
G = Pb−Free Package

ORDERING INFORMATION

Device Package Shipping

MJW21195 TO−247 30 Units/Rail
MJW21195G TO−247 30 Units/Rail
(Pb−Free)
MJW21196 TO−247 30 Units/Rail
MJW21196G TO−247 30 Units/Rail
*For additional information on our Pb−Free strategy and soldering details, please (Pb−Free)
download the ON Semiconductor Soldering and Mounting Techniques
Reference Manual, SOLDERRM/D.

© Semiconductor Components Industries, LLC, 2010 1 Publication Order Number:

March, 2010 − Rev. 3 MJW21195/D
 MJW21195 (PNP) MJW21196 (NPN)

ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise noted)

Characteristic Symbol Min Typical Max Unit
OFF CHARACTERISTICS
Collector−Emitter Sustaining Voltage (IC = 100 mAdc, IB = 0) VCEO(sus) 250 − − Vdc
Collector Cutoff Current (VCE = 200 Vdc, IB = 0) ICEO − − 100 mAdc
Emitter Cutoff Current (VCE = 5 Vdc, IC = 0) IEBO − − 50 mAdc
Collector Cutoff Current (VCE = 250 Vdc, VBE(off) = 1.5 Vdc) ICEX − − 50 mAdc
SECOND BREAKDOWN
Second Breakdown Collector Current with Base Forward Biased IS/b Adc
(VCE = 50 Vdc, t = 1 s (non−repetitive) 4.0 − −
(VCE = 80 Vdc, t = 1 s (non−repetitive) 2.25 − −

ON CHARACTERISTICS
DC Current Gain hFE
(IC = 8 Adc, VCE = 5 Vdc) 20 − 80
(IC = 16 Adc, IB = 5 Adc) 8 − −
Base−Emitter On Voltage (IC = 8 Adc, VCE = 5 Vdc) VBE(on) − − 2.0 Vdc
Collector−Emitter Saturation Voltage VCE(sat) Vdc
(IC = 8 Adc, IB = 0.8 Adc) − − 1.0
(IC = 16 Adc, IB = 3.2 Adc) − − 3

DYNAMIC CHARACTERISTICS
Total Harmonic Distortion at the Output THD %
VRMS = 28.3 V, f = 1 kHz, PLOAD = 100 WRMS hFE
unmatched − 0.8 −
(Matched pair hFE = 50 @ 5 A/5 V) hFE
matched − 0.08 −
Current Gain Bandwidth Product fT 4 − − MHz
(IC = 1 Adc, VCE = 10 Vdc, ftest = 1 MHz)

Output Capacitance Cob − − 500 pF

(VCB = 10 Vdc, IE = 0, ftest = 1 MHz)

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 MJW21195 (PNP) MJW21196 (NPN)

TYPICAL CHARACTERISTICS

PNP MJW21195 NPN MJW21196

6.5 7.5
FT, CURRENT BANDWIDTH PRODUCT (MHz)

F T, CURRENT BANDWIDTH PRODUCT (MHz)

7.0
6.0 VCE = 10 V
VCE = 10 V 6.5
5.5 6.0
5.0 5.5
5.0 VCE = 5 V
VCE = 5 V
4.5 4.5
4.0 4.0
3.5
3.5 3.0
TJ = 25°C 2.5 TJ = 25°C
3.0
ftest = 1 MHz ftest = 1 MHz
2.0
2.5 1.5
2.0 1.0
0.1 1.0 10 0.1 1.0 10
IC, COLLECTOR CURRENT (AMPS) IC, COLLECTOR CURRENT (AMPS)
Figure 1. Typical Current Gain Figure 2. Typical Current Gain
Bandwidth Product Bandwidth Product

PNP MJW21195 NPN MJW21196

1000 1000
h FE , DC CURRENT GAIN

h FE , DC CURRENT GAIN

TJ = 100°C
100 100 TJ = 100°C
25°C 25°C

-25°C -25°C

VCE = 20 V VCE = 20 V
10 10
0.1 1.0 10 100 0.1 1.0 10 100
IC, COLLECTOR CURRENT (AMPS) IC, COLLECTOR CURRENT (AMPS)
Figure 3. DC Current Gain, VCE = 20 V Figure 4. DC Current Gain, VCE = 20 V

PNP MJW21195 NPN MJW21196

1000 1000
h FE , DC CURRENT GAIN

h FE , DC CURRENT GAIN

TJ = 100°C
100 100 TJ = 100°C
25°C 25°C

-25°C
-25°C

VCE = 5 V VCE = 5 V
10 10
0.1 1.0 10 100 0.1 1.0 10 100
IC, COLLECTOR CURRENT (AMPS) IC, COLLECTOR CURRENT (AMPS)
Figure 5. DC Current Gain, VCE = 5 V Figure 6. DC Current Gain, VCE = 5 V

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 MJW21195 (PNP) MJW21196 (NPN)

TYPICAL CHARACTERISTICS

PNP MJW21195 NPN MJW21196

30 30
2.0 A
2.0 A 1.5 A
25 25
IC , COLLECTOR CURRENT (A)

IC , COLLECTOR CURRENT (A)

1.5 A 1.0 A
20 1.0 A 20
IB = 0.5 A
IB = 0.5 A
15 15

10 10

5.0 5.0
TJ = 25°C TJ = 25°C
0 0
0 5.0 10 15 20 25 0 5.0 10 15 20 25
VCE, COLLECTOR-EMITTER VOLTAGE (VOLTS) VCE, COLLECTOR-EMITTER VOLTAGE (VOLTS)
Figure 7. Typical Output Characteristics Figure 8. Typical Output Characteristics

PNP MJW21195 NPN MJW21196

3.0
1.4
TJ = 25°C TJ = 25°C
SATURATION VOLTAGE (VOLTS)

SATURATION VOLTAGE (VOLTS)

2.5
IC/IB = 10 1.2 IC/IB = 10

2.0 1.0 VBE(sat)

0.8
1.5

VBE(sat) 0.6
1.0
0.4
VCE(sat)
0.5
0.2
VCE(sat)
0 0
0.1 1.0 10 100 0.1 1.0 10 100
IC, COLLECTOR CURRENT (AMPS) IC, COLLECTOR CURRENT (AMPS)
Figure 9. Typical Saturation Voltages Figure 10. Typical Saturation Voltages

PNP MJW21195 NPN MJW21196

10 10
VBE(on) , BASE-EMITTER VOLTAGE (VOLTS)

VBE(on) , BASE-EMITTER VOLTAGE (VOLTS)

TJ = 25°C TJ = 25°C

1.0 1.0

VCE = 20 V VCE = 20 V
VCE = 5 V VCE = 5 V

0.1 0.1
0.1 1.0 10 100 0.1 1.0 10 100
IC, COLLECTOR CURRENT (AMPS) IC, COLLECTOR CURRENT (AMPS)
Figure 11. Typical Base−Emitter Voltage Figure 12. Typical Base−Emitter Voltage

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 MJW21195 (PNP) MJW21196 (NPN)

There are two limitations on the power handling ability of The data of Figure 13 is based on TJ(pk) = 150°C; TC is
a transistor; average junction temperature and secondary variable depending on conditions. At high case
breakdown. Safe operating area curves indicate IC − VCE temperatures, thermal limitations will reduce the power than
limits of the transistor that must be observed for reliable can be handled to values less than the limitations imposed by
operation; i.e., the transistor must not be subjected to greater second breakdown.
dissipation than the curves indicate.

TYPICAL CHARACTERISTICS
PNP MJW21195 NPN MJW21196
100 100
IC, COLLECTOR CURRENT (AMPS)

IC, COLLECTOR CURRENT (AMPS)

10 ms 10 ms
10 100 ms 10 100 ms
1 Sec
1 Sec

1 1

0.1 0.1
1 10 100 1000 1 10 100 1000
VCE, COLLECTOR−EMITTER VOLTAGE (VOLTS) VCE, COLLECTOR−EMITTER VOLTAGE (VOLTS)

Figure 13. Active Region Safe Operating Area Figure 14. Active Region Safe Operating Area

10000 10000
Cib
Cib
C, CAPACITANCE (pF)

C, CAPACITANCE (pF)

1000 1000

Cob

TJ = 25°C TJ = 25°C Cob

ftest = 1 MHz ftest = 1 MHz

100 100
0.1 1.0 10 100 0.1 1.0 10 100
VR, REVERSE VOLTAGE (VOLTS) VR, REVERSE VOLTAGE (VOLTS)

Figure 15. MJW21195 Typical Capacitance Figure 16. MJW21196 Typical Capacitance

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 MJW21195 (PNP) MJW21196 (NPN)

1.2

1.1

T , TOTAL HARMONIC
DISTORTION (%)
1.0

0.9

0.8

HD 0.7

0.6
10 100 1000 10000 100000
FREQUENCY (Hz)

Figure 17. Typical Total Harmonic Distortion

+50 V
AUDIO PRECISION
MODEL ONE PLUS SOURCE 50 W
TOTAL HARMONIC AMPLIFIER DUT
DISTORTION
ANALYZER
0.5 W

0.5 W 8.0 W

DUT

-50 V

Figure 18. Total Harmonic Distortion Test Circuit

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6
MECHANICAL CASE OUTLINE
PACKAGE DIMENSIONS

TO−247
CASE 340L−02
ISSUE F
DATE 26 OCT 2011

SCALE 1:1
−T− NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
C Y14.5M, 1982.
−B− 2. CONTROLLING DIMENSION: MILLIMETER.
E
MILLIMETERS INCHES
U L
DIM MIN MAX MIN MAX
A 20.32 21.08 0.800 8.30
N B 15.75 16.26 0.620 0.640
4
C 4.70 5.30 0.185 0.209
A D 1.00 1.40 0.040 0.055
−Q− E 1.90 2.60 0.075 0.102
1 2 3
0.63 (0.025) M T B M F 1.65 2.13 0.065 0.084
G 5.45 BSC 0.215 BSC
H 1.50 2.49 0.059 0.098
P J 0.40 0.80 0.016 0.031
−Y− K 19.81 20.83 0.780 0.820
L 5.40 6.20 0.212 0.244
K N 4.32 5.49 0.170 0.216
P --- 4.50 --- 0.177
Q 3.55 3.65 0.140 0.144
U 6.15 BSC 0.242 BSC
W 2.87 3.12 0.113 0.123
W J
F 2 PL H GENERIC
G
D 3 PL MARKING DIAGRAM*
0.25 (0.010) M Y Q S

STYLE 1: STYLE 2: STYLE 3: STYLE 4: XXXXXXXXX

PIN 1. GATE PIN 1. ANODE PIN 1. BASE PIN 1. GATE
2. DRAIN 2. CATHODE (S) 2. COLLECTOR 2. COLLECTOR AYWWG
3. SOURCE 3. ANODE 2 3. EMITTER 3. EMITTER
4. DRAIN 4. CATHODES (S) 4. COLLECTOR 4. COLLECTOR

STYLE 5: STYLE 6:
PIN 1. CATHODE PIN 1. MAIN TERMINAL 1
2. ANODE 2. MAIN TERMINAL 2
3. GATE 3. GATE
4. ANODE 4. MAIN TERMINAL 2

XXXXX = Specific Device Code

A = Assembly Location
Y = Year
WW = Work Week
G = Pb−Free Package

*This information is generic. Please refer to

device data sheet for actual part marking.
Pb−Free indicator, “G” or microdot “ G”,
may or may not be present.

DOCUMENT NUMBER: 98ASB15080C Electronic versions are uncontrolled except when

accessed directly from the Document Repository. Printed
STATUS: ON SEMICONDUCTOR STANDARD versions are uncontrolled except when stamped
“CONTROLLED COPY” in red.
NEW STANDARD:
© Semiconductor Components Industries, LLC, 2002 http://onsemi.com Case Outline Number:
DESCRIPTION:
October, 2002 − Rev. 0 TO−247 1 PAGE 1 OFXXX 2
 DOCUMENT NUMBER:
98ASB15080C

PAGE 2 OF 2

ISSUE REVISION DATE

D CHANGE OF OWNERSHIP FROM MOTOROLA TO ON SEMICONDUCTOR. DIM A 25 AUG 2000
WAS 20.80−21.46/0.819−0.845. DIM K WAS 19.81−20.32/0.780−0.800. UPDATED
STYLE 1, ADDED STYLES 2, 3, & 4. REQ. BY L. HAYES.
E DIM E MINIMUM WAS 2.20/0.087. DIM K MINIMUM WAS 20.06/0.790. ADDED 26 FEB 2010
GENERIC MARKING DIAGRAM. REQ. BY S. ALLEN.
F ADDED STYLES 5 AND 6. REQ. BY J. PEREZ. 26 OCT 2011

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© Semiconductor Components Industries, LLC, 2011 Case Outline Number:

October, 2011 − Rev. 02F 340L
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MJW21195 MJW21195G MJW21196 MJW21196G