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 Renewable and Sustainable Energy Reviews 56 (2016) 494–509

Contents lists available at ScienceDirect

Renewable and Sustainable Energy Reviews

journal homepage: www.elsevier.com/locate/rser

Solar cell parameters extraction based on single and double-diode

models: A review
Ali M. Humada a,b,n, Mojgan Hojabri a, Saad Mekhilef c, Hussein M. Hamada d
a
Faculty of Electrical & Electronics Engineering, University Malaysia Pahang, 26600 Pekan, Malaysia
b
Electricity Production Directorate of Salahaldeen, Ministry of Electricity, 34007 Baiji, Iraq
c
Power Electronics and Renewable Energy Research Laboratory (PEARL), Department of Electrical Engineering, University of Malaya, Kuala Lumpur, Malaysia
d
Faculty of Civil Engineering & Earth Resources, Universiti Malaysia Pahang, 26300 Gambang, Malaysia

art ic l e i nf o a b s t r a c t

Article history: This paper comprehensively describes and discusses the extraction of the DC parameters of solar cells by
Received 9 July 2015 mathematical techniques based on single-diode and double-diode models. The main parameters of
Received in revised form interest are the photocurrent, Iph, the reverse diode saturation current, Io, the ideality factor of diode, n,
10 November 2015
the series resistance, RS, and the shunt resistance, RSh. This paper reviews the foremost issues of the
Accepted 22 November 2015
condition of the methodologies of the extraction of PV solar cell parameters. This paper classifies the
reviewed models on the basis of the number of extracted parameters and provides specific comments for
Keywords: each model. Five parameters from different models that have identical attributes are characterized with
PV parameter extraction respect to irradiance and temperature to demonstrate the behavior and characteristics of these para-
I–V characteristics
meters. In addition, this article implements two real models, single-diode and double-diode models, and
PV modeling
examines the performance of the PV parameters for each model and its effect on the current–voltage (I–
Single-diode model
Double-diode model V) and power–voltage (P–V) characteristics. Furthermore, to assess the accuracy of each model with
respect to the data provided by the manufacturer, this paper compares the I–V and P–V curves at
standard test condition (STC) and for different parameters for a generic PV panel.
& 2015 Elsevier Ltd. All rights reserved.

Contents

1. Introduction . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 495
2. Available PV models . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 495
2.1. Single-diode PV cell model . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 496
2.2. Double-diode PV cell model . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 496
3. Extraction of parameters for PV model . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 497
3.1. Five-parameter models . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 497
3.1.1. Model of Valerio, based on single-diode model. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 497
3.1.2. Model of Celik, based on single-diode model. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 497
3.1.3. Model of Chan, based on single-diode model. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 498
3.1.4. Model of Brano, based on single-diode model. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 498
3.1.5. Model of Merbaha, based on double-diode model. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 499
3.2. Four-parameter model. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 499
3.2.1. Model of Celik, based on single-diode model. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 499
3.2.2. Model of Tivanov, based on single-diode model. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 499
3.2.3. Model of Chegaar, based on single-diode model.. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 499
3.2.4. Model of Khan, based on single-diode model. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 500
3.2.5. Model of Kaminski, based on double-diode model. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 500
3.3. Three-parameter model. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 500

n
Corresponding author at: Faculty of Electrical & Electronics Engineering, University Malaysia Pahang, 26600 Pekan, Malaysia. Tel.: þ 601123219947.
E-mail addresses: [email protected], [email protected] (A.M. Humada).

http://dx.doi.org/10.1016/j.rser.2015.11.051
1364-0321/& 2015 Elsevier Ltd. All rights reserved.
 A.M. Humada et al. / Renewable and Sustainable Energy Reviews 56 (2016) 494–509 495

3.3.1. Model of Zhang, based on single-diode model. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 500

3.3.2. Model of Kiran, based on single-diode model . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 500
3.3.3. Model of Arcipiani, based on single-diode model. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 500
3.3.4. Model of Khatib, based on single-diode model. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 501
3.3.5. Model of Garrido-Alzar, based on double-diode model. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 501
3.4. Two-parameter model . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 501
3.4.1. Model of Bowden, based on single-diode model.. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 501
3.4.2. Model of Priyanka, based on single-diode model. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 501
3.4.3. Model of El-Adawi, based on single-diode model. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 501
3.4.4. Model of Ortiz-Conde, based on single-diode model. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 501
3.4.5. Model of Jia, based on double-diode model. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 502
3.5. One-parameter model . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 502
3.5.1. Model of El-Adawi, based on single-diode model. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 502
3.5.2. Model of Aberle, based on single-diode model. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 502
3.5.3. Model of Cotfas, based on single-diode model. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 502
3.5.4. Model of Araújo, based on single-diode model. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 502
3.5.5. Model of Polman, based on double-diode model. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 502
4. Model evaluation criteria . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 502
5. Implementation of single-diode and double-diode models. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 504
5.1. Single-diode model . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 504
5.2. Double-diode model . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 504
5.3. Effect of solar cell parameter variation on PV performance . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 506
6. Discussion . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 506
7. Conclusions . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 508
Acknowledgments . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 508
References . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 508

1. Introduction can estimate the parameters in a truly representative way [10,11].

As such, the modeling involves a diversification in the types and
The accurate measurement of current–voltage (I–V) character- methods used, including the number of diodes, the shunt resis-
istics is essential in controlling the quality of solar cells and eval- tance (infinite or finite), the ideality constant, and the most
uating the performance of photovoltaic (PV) systems. However, appropriate numerical methods.
the accuracy of such measurement is directly related to the An entirely accurate benchmarking is somewhat elusive,
number of DC parameters extracted in that model. Furthermore, in because researchers test their algorithms and models with respect
addition to its importance for research purposes, the identification to different PV systems, such as, environmental conditions, applied
and understanding of the impact of DC solar cell parameters on technologies, ratings, and size. However, in this study, we sum-
model efficiency have a directly influence on the optimization of marize and discuss the main equations used in each model to
the fabrication processes [1,2]. Consequently, the accurate mod- overcome the variety of parameters that can affect the modeling
eling and characterization of a solar cell model are based on the results.
extracted parameters in that model. Previous studies have inves- In this review, the presented models consider different para-
tigated methods and proposed suggestions regarding the use of meters that characterize PV solar cells. These parameters include
nonlinear electrical models to confirm the operating conditions of the photocurrent, Iph, the reverse diode saturation current, Io, the
solar cells and to determine its effective parameters [3–8]. The ideality factor of diode, n, the series resistance, RS, and the shunt
most imperative DC solar cell parameters are usually calculated resistance, RSh, and they involve alternative input variables. In
and determined from the current–voltage (I–V) and power–vol- addition, the equations and procedures that are adopted to inter-
tage (P–V) characteristics. Fig. 1 describes a single-diode model of pret the electrical characteristics are closely related to the specifics
a PV cell that is used to determine these parameters and its of a particular model. In general, the complexity of a model is
characteristics [1,9]. Another type that can be used is a double- based on the desired level of accuracy [12]. This review provides
diode model, which can examine the (I–V) and (P–V) character- an analysis of the characteristics of different models that can be
istics in a wider scope than the single-diode model. useful for identifying the most relevant type for a specific appli-
In general, the modeling of a photovoltaic module involves the cation. Another contribution of this study is showing that the
calculation of the I–V characteristics by using a specific model. results can accumulated within one informational source, which
However, it is a complex and challenging task to create models could be beneficial for future works on the optimization of fabri-
that represent various irradiance and temperature conditions that cation processes.

2. Available PV models

To depict the properties of the existing models, namely, the

single-diode and double-diode models, certain assumptions were
made in presenting a simplified version of the models for engi-
neering research applications with regard to the solar system. The
two models differ in terms of the number of diodes that denote
Fig. 1. Single-diode model equivalent circuit. the saturation current.
496 A.M. Humada et al. / Renewable and Sustainable Energy Reviews 56 (2016) 494–509

Nomenclature Vpv PV output voltage

Io reverse saturation current
STC standard test condition Eq energy gap of solar cell
G solar irradiance (W/m2) Rs series resistance (Ω)
GSTC solar irradiance at standard test conditions (1000 W/ Rso reciprocal of the gradient at the open-circuit point
m2 ) ROC inverse of the gradients [(dI/dV)  1] under the open
T PV cell Temperature (K) circuit conditions
TSTC temperature at standard test conditions (25 °C) Rsh shunt resistance (Ω)
G▽ ratio of the generic solar irradiance to the irradiance at Rsho reciprocal of the gradient at the short-circuit point
STC RSC inverse of the gradients [(dI/dV)  1] under the short
T▽ ratio of the generic temperature to the irradiance at circuit conditions
STC Voc open circuit voltage of the panel (V)
VD voltage across the diode Voc,STC open circuit voltage of the panel at standard test
n diode quality factor condition (V)
n, STC diode quality factor at standard rating conditions Isc short circuit current of the module (A)
Io reverse saturation current of the diode (A) Isc, STC short circuit current of the module at standard test
IL photogenerated current (A) condition (A)
IL,STC photogenerated current at standard rating μISC coefficient of the short circuit current (A/1C)
conditions (A) μVOC coefficient of the open circuit voltage (V/1C)
I*mp coordinates of current at the maximum power Va denotes a random value of the voltage
point (A) Vt thermal voltage value which equal to (q/nKT)
V*mp coordinates of voltage at the maximum power Io, STC reverse saturation current at standard rating
point (V) conditions (A)
Impp current corresponding to the maximum power K Boltzmann constant (1.381e10 – 23 J/K)
point (A) n diode quality factor
Vmpp voltage corresponding to at the maximum power P power generated by the PV panel (W)
point (V) q electric charge of an electron (1.602e10 –19 C)
I PV output current

2.1. Single-diode PV cell model of multiple elementary diodes that are adjacent to one another
and consistently distributed along the surface between the two
A solid, single-junction PV cell that is not illuminated behaves layers of the semiconductor. A current passes through each basic
very similarly to a semiconductor diode. The conventional equa- diode while flowing across the semiconductor layers along a dif-
tion below describes a simple diode with a distinctive I–V curve: ferent path, marked by different electric resistance and reduction

 
qV D in voltage.
I D ¼ I o exp 1 ð1Þ
nkT The transverse element of the current, IL, which runs parallel to
the surface of the cell, should differ for each elementary diode so
The ideality factor (quality factor or emission coefficient),
which usually ranges from 1 to 2 but might be higher in certain that each cell will have a different I–V characteristic. Given that
cases, is determined according to the fabrication process and the these diodes are regarded as being in parallel, their combination
semiconductor material. Given that n is generally assumed to be will determine the overall I–V characteristic of the PV cell. The
roughly equal to 1, it is often left out. transverse electrical resistance greatly exceeds the electrical
When the semiconductor diode is illuminated, it will produce a resistance in relation to the direct IL element. The transverse ele-
photo-generated current, Iph, which will result in a vertical trans- ment of the current IL, which only occurs in an actual photovoltaic
lation of the I–V curve of a quantity that is almost entirely related cell, generates a high energy dissipation that considerably reduces
to the surface density of the incident energy. the conversion efficiency of the solar cell.
Thus, an ideal cell is depicted as a current generator that is In [14], Wolf developed a simplified equivalent circuit,
linked to a parallel diode with an I–V characteristic, which is as shown in Fig. 2. This model consists only of double diodes,
mathematically defined by Shockley in the following equation
a current generator, and two resistors, taking into consideration
as [13]:

  the dissipative effects described above and the existence of
qV D VD any construction flaws. The resolution of the above equi-
I ¼ I ph I o exp 1  ð2Þ
nkT Rsh valent circuit resulted in the following implied expression of the
where V D ¼ V pv þ RS I
A simple theoretical definition is presented by Eq. (2) because it
does not consider the impact caused by the presence of the elec-
trodes, one above and another below the semiconductor layer,
which are required to accumulate the charges that cover the
intercepting surface to some extent.

2.2. Double-diode PV cell model

Wolf correctly noted in [14] that the photocurrent in a PV cell is

generated not only by a single diode but also by the overall effect Fig. 2. Double-diode model equivalent circuit.
 A.M. Humada et al. / Renewable and Sustainable Energy Reviews 56 (2016) 494–509 497

assessment of electrical behavior on the basis of the number of DC

parameters of PV solar cells.

3.1.1. Model of Valerio, based on single-diode model.

A method for finding out the parameters of solar cells,
according to the single-diode model was devised by Valerio. [19].
Both the computed I–V characteristics and those provided by the
manufacturers were employed to get the five parameters, Rs, Rsh, n,
IL and I0. This method, which takes into consideration any changes
in external conditions, will result in an accurate approximation of
the current produced by the PV panel.
     
I G∇ ; T ¼ G∇ I L ðT Þ I o G∇ ; T exp G∇ V þ KIðT  T STC Þg
þ IRS Þ=G∇ nT  1
!
G∇ fV þ KIðT  T STC Þg þ IRS
 ð4Þ
Rsh
Fig. 3. Influence of diode ideality factor on the I–V characteristic.
where,

current, I: V mp  V  mp
K¼ ð5Þ

  
  I  mp ðT  T STC Þ
qV D qV D VD
I ¼ I ph  I o1 exp 1 I o2 exp 1  ð3Þ The quantity G∇ which is equal to G=GSTC represents the ratio of
n1 kT n2 kT Rsh
the generic solar irradiance to the solar irradiance at STC, while K
As shown in Fig. 2, to solve Eq. (3), the parameters (IL; n1; n2; is the thermal correction factor similar to the curve correction
I01; I02; Rs;and Rsh) must be known. factor defined by the IEC 891. Hence, the parameters can be
The more comprehensive terms are the slopes of the curve evaluated according to the following equation,
before and after the “knee” of the curve is altered by the resistors
Rsh and Rs, respectively, while the curvature is changed by the ratio I L ðT Þ ¼ I L;STC þ μIsc ðT  T STC Þ ð6Þ
between I01 and I02 [15]. Although this is not an issue that cannot ∇
Clearly, G is 1, T is 25 °C at standard test conditions (STC),
be solved mathematically, the computation of these parameters is and Eq. (4) will be equivalent to the conventional five parameters
hampered by the implicit form of the equation and by the pre- in (2).
sence of two exponential terms. In the literature, only a few
I L;STC ¼ I SC;STC and Rsh ¼ Rsh0 ð7Þ
comprehensive models allow the algorithm to be coded to retrieve
these parameters. These models are single-cell models built on Then, under the common conditions that have been extensively
specific assumptions that restrict their application. fulfilled, Rs, Rp, and n can be found by applying to (8)
I o;STC 1
Rs 〈〈Rsho expðI SC;STC R =nT STC 〈〈 ð8Þ
nT STC Rsho
3. Extraction of parameters for PV model
S
For the extraction of PV parameters, several researchers prefer
the use of different correlations that are not based on an electric Another noteworthy observation is with regard to the current I0
model [16,17], whereby there are only five unknown parameters (G, T), whose value for the irradiance and temperature individually
and one or two exponential terms. According to the conventional can be calculated by the following equation:
method, the photocurrent, IL, is determined by the irradiance, Io, "  #
  G∇  0:2 I o ð1; T Þ
which is influenced by the temperature of the cell. By contrast, n, I o G∇ ; T ¼ exp ln þ ln I o ð0:2; T Þ ð9Þ
ð1  0:2Þ I o ð0:2; T Þ
Rs, and Rsh remain constant. Some researchers have proposed
suggestions for improvement and/or simplification that would
enable the five parameters (IL, n, I0, Rs, and Rsh) to be ascertained 3.1.2. Model of Celik, based on single-diode model
according to the performance data of the modules that are usually Another model proposed by Celik in [20] for the derivation of
supplied by the manufacturers. In other studies, researchers have the five parameters, IL, Io, Rs, Rsh and n, are at a certain temperature
concentrated on either four parameters, three, two, or even just and solar irradiance level within the limits of Voc, Isc, Vmpp and Impp,
one parameter. This study reviews the literature to identify the according to the following definitions for Rso and Rsho:
best-described models for assessing the electrical behavior of

dV
single-diode and double-diode models on the basis of the number Rso ¼  ð10Þ
dI V ¼ V OC
of DC parameters of PV solar cells. The techniques for extracting
solar cell parameters are concisely summarized below.

dV
Rsho ¼  ð11Þ
dI I ¼ I SC
3.1. Five-parameter models
where Rso is the reciprocal of the gradient at the open-circuit
A solar cell model typically depends on five parameters (IL, Io, a, point, while Rsho is the reciprocal of the gradient at the short-
Rs, and Rsh) [18]. The parameter extraction procedure is different circuit point. The module manufacturers normally do not give
for each model. Previous studies concerning the extraction of these resistance values. Blas et al. [21] proposed Rso values in the
these parameters have utilized either single-diode or double- range of 0.30 to 0.33 Ω and Rsho values in the range of 50–170 Ω
diode models. Therefore, we review several of the best-described according to the gradients of the experimental curves. According
models available in the literature that are designed for the to the sensitivity analysis of the five-parameter model for Rso and
498 A.M. Humada et al. / Renewable and Sustainable Energy Reviews 56 (2016) 494–509

Rsho, the model is able to adequately predict existing values for an The other parameters, namely Io, Rs and Iph, can be obtained
extensive range of Rso and Rsho values. The five necessary para- from the following equations:
meters can be calculated by means of the following equations:




   V OC V OC
I o ¼ I SC  exp  ð23Þ
RS I SC RS Rsh nV T
I L ¼ I SC 1 þ þ I o exp 1 ð12Þ
Rsh mV t



   nV t V OC
V OC V OC RS ¼ RSo  exp  ð24Þ
I o ¼ I SC  exp  ð13Þ Io nV T
Rsh mV t



 


  RS I SC RS
mV t V OC I ph ¼ I SC 1 þ þ I o exp 1 ð25Þ
RS ¼ RSO  exp  ð14Þ Rsh nV T
Io mV t

RSh ¼ RSho ð15Þ 3.1.4. Model of Brano, based on single-diode model.

In [23] Brano developed a method to determine the parameters
V mp þ I mp Rso  V OC of the solar cell. The method was free of any simplifications or
n¼ ( !) ð16Þ


 assumptions for extracting the five parameters of Eq. (2) based
V I mp
Vt ln I SC  Rmp  I mp  ln I SC  VROC þ V
merely on the normal technical data (Fig. 2) under standard test
sh sh I SC  ROC
sh
conditions (STC) for a single-diode model.
where the values of Isc and Voc at a temperature and solar irra- Five separate mathematical equations were formulated for the
diance level besides the reference values can be calculated as: calculation of the correct values of the five parameters. The five
I SC ¼ I SC;STC G∇ þ μISC ðT  T STC Þ ð17Þ unknown parameters can be extracted by concurrently solving
these equations.
The ISC values can be used to derive the first equation. This is
V OC ¼ V OC;STC þmV t ln G∇ þ μV OC ðT  T STC Þ ð18Þ
assumed that the voltage is zero at the short circuit current point
The model is applied in the following way as (17) and (18) are and by substituting these values into Eq. (2) will lead to:
employed to calculate Isc and Voc based on their reference values, 

I SC RS I SC RS
and they are adjusted simultaneously to meet environmental f n1 : I L þ 1  exp Io   I SC ¼ 0 ð26Þ
nT Rsh
conditions. Eq. (12)–(16) are used to calculate the five parameters,
which are then used in succession in Eq. (2), which links the The VOC values can be used to derive the second equation. This
current of the cell to its voltage. And also, the measured voltage is also assumed that the current is zero at the open circuit voltage
values are used to calculate the current of the cell from (2). point, and substituting these values into Eq. (2) will lead to:


V OC V OC
3.1.3. Model of Chan, based on single-diode model. f n2 : I L þ 1  exp Io  ¼0 ð27Þ
nT Rsh
An analytical five-point method was devised by Chan in [22]. In
this method, the single-diode model for solar cells is used to find The data on the MPP, where V is Vmpp and I is Impp can be used
the five parameters, namely Iph, Io, n, Rs and Rsh, under illumination for deriving the third equation; and by substituting these values
by means of the values of Isc, Voc, Impp, Vmpp, the gradient at the into (2) will lead to:
open-circuit point Rso, and the gradient at the short-circuit point 

I mpp RS þV mpp I mpp RS þ V mpp
Rsho, which are provided by the I–V characteristic. The values of f n3 : I L þ 1  exp Io   I mpp ¼ 0
Rsho and Rso, which are given by (10) and (11), respectively, can be nT Rsh
calculated by fitting the I–V characteristic curve linearly around ð28Þ
the short-circuit current point and the open-circuit voltage point, Then, the fourth equation can be derived from (2) in terms of V,
respectively. where V is Vmpp and I is Impp:
The ideality factor of the diode can be calculated via the fol- h
i
I R þV
lowing equation:  nT  exp mpp SnT mpp I o Rsh I mpp

 f n4 : h
i þ ¼0 ð29Þ
R þV
A nT:ðR þ R Þ þ exp mpp S mpp I o R :R V mpp
I
n¼  ð19Þ S sh nT sh S
V t ðB þ C Þ
Finally, the fifth equation of the model can be derived from the
where A, B and C can be derived as follows:
power of V times (2) in terms of V also, where V is Vmpp and I is
A ¼ V m þ RSo I m V OC ð20Þ Impp:

I V RS þ V 2 mpp  
V mpp :nT½I o Rsh þ I L Rsh 2V mpp þ ½expð mpp mpp V nT ÞI o Rsh ½I mpp V mpp :RS  V mpp nT þ V mpp
f n5 : n h
mpp  i o ¼0 ð30Þ
I V RS þ V 2 mpp
V mpp I o :RS :Rsh : exp mpp mpp V mpp nT þ nT ðRsh þ RS Þ


 The model is constructed on the concept of beginning at a

Vm V OC random point and then passing through the neighbors. The initial
B ¼ ln I SC   I m  ln I SC  ð21Þ
Rsh Rsh estimates of IL, I0, Rs, Rsh and n are selecting from a range of rela-
tively large arbitrary values, and the process can be repeated until
Im the residuals for the equations, f1(IL, I0, Rs, Rsh, n),…, f5(IL, I0, Rs, Rsh,
C¼
 ð22Þ n), are virtually zero. The automatic use of a non-linear optimi-
I SC  VROC
sh zation solver, that ease to be utilized, is now available in almost
 A.M. Humada et al. / Renewable and Sustainable Energy Reviews 56 (2016) 494–509 499

any spreadsheet software; and open source scripts are also avail- calculated by means of the following equations:
able. The generalized reduced gradient (GRG) algorithm, which is μV OC T STC  V OC;STC þ Eq N S
one of the most resilient nonlinear programming methods, is nSTC ¼ μI T STC
ð35Þ
usually employed by these solvers to work out optimization pro-
;SC
I L;STC 3
blems [24]. This method is adopted as it can easily be applied in

I
the system in Eq. (31) through the use of a conventional software nSTC : ln 1  mpp;STC
I L;STC  V mpp;STC þ V OC;STC
application without the need to write out a code line. RS;STC ¼ ð36Þ
I mpp;STC
8
> f n1 ¼ 0
>
> I
>
> I o;STC ¼
L;STC  ð37Þ
< f n2 ¼ 0
> V
exp nOC;STC 1
f n3 ¼ 0 ð31Þ ;STC
>
>
> f n4 ¼ 0
> h
>
>
:f ¼0 I L ¼ G∇ I L;STC þ μI;SC ðT  T STC Þ ð38Þ
n5

 

 3 Eq N s 1
I o ¼ I o;STC T ∇ exp 1 ∇ ð39Þ
3.1.5. Model of Merbaha, based on double-diode model n T
Merbaha devised another technique for extracting the five
parameters of solar cells (RS, Gsh, IL, n1 and n2, and I01 and I02) by RS ¼ RS;STC ð40Þ
means of the double-diode model [25]. The line of resistance, with
a gradient of Voc/Isc, divides the I–V characteristic of a solar cell, n ¼ nSTC T ∇ ð41Þ
measured under illumination conditions, into two regions, with
where T ∇ is T=T STC .
one region being close to the short circuit current and the other
The model is executed in the following way:
being close to the open circuit voltage. Thus, the first region of the
The values of the four parameters under reference conditions
I–V characteristic is a function of the current, while the second
are found by using Eqs. (34)–(37). Eqs. (38)–(41) are used to adjust
region is a function of the voltage. Eq. (3) Can be modeled as (32) these four parameters to match the environmental conditions, and
and (33) for the first and second regions, respectively: they are then employed in (2) to link the cell current to the cell
f voltage. Either the cell current or the cell voltage can be calculated
I ¼ I SC  Gfsh V  a3 h ðI; V Þ ð32Þ
from (2), depending on which value is known. On the other hand,
both of the cell current and the cell voltage can be computed at the
s
V ¼ V OC  IRsS  b3 h ðI; V Þ ð33Þ maximum power point.

where the first region is denoted by the superscript “f” and the
3.2.2. Model of Tivanov, based on single-diode model.
second region by the superscript “s”, and the curvature of the I–V
According to the model devised by Tivanov [28], it is preferable
characteristic is denoted by hi(I, V), with i being either f or s [26].
to calculate the parameters of the solar cell, such as Rsh, Rs, Io and n,
To obtain the coefficients (Isc and Gfsh) the first region must be from the I–V characteristic at a set illumination level. Based on the
fitted close to the short circuit with Eq. (32), while to obtain the mathematical equation denoted by (2) for the single-diode model,
coefficients (Voc and Rss) the second region must be fitted close to and by approximating Iph as equal as Isc and analyzing the I–V
the open circuit with Eq. (33). To determine the set of parameters characteristic of a solar cell at a set illumination level, its para-
(Iph, Gsh1/Rsh, Iod, Ior, and Rs), the system must be solved with the meters can be calculated by means of the following equations:
five non-linear equations obtained for Isc, Gsh, Voc, Rs and Io, with 8" 9

 #12
the curve passing through the boundary point, which is approxi- 1< 2 2p V OC 2 V OC =
mately the maximum power point [25]. The theoretical values nd RS ¼ ða  bÞ þ ða  bÞ þ þ ða þ bÞ þ ð42Þ
2: I SC I SC I SC ;
and nr are assumed by the ideality factors of the diode. To solve the
system, the set of parameters must first be equal to zero and the V OC
iterative process is conducted once the parameters converge. Rsh ¼ nV T
ð43Þ
b þ RS
 anV
þ RS þ I SC
T

3.2. Four-parameter model I SC V OC V OC

Io ¼  ; where λ ¼ exp 1 ð44Þ
λ λRsh nV T
Beside the five parameter model, other studies concentrated on
The allotted specific value of n is confirmed by comparing it
the least number of parameters, like four, three, two or even one
with the value obtained by using the following equation:
parameter model. So, four parameters model will be described in
  
the following paragraphs. V mpp  I mpp RS I SC þ I o  I m  V m =Rsh
n¼   ð45Þ
V T I mpp  V mpp =Rsh
3.2.1. Model of Celik, based on single-diode model.
A four-parameter model was constructed by Celik in [20] based
on the assumption that Rsh in (2), is infinite and thus, can be 3.2.3. Model of Chegaar, based on single-diode model.
ignored. As such, this is a single-diode model that can be obtained Chegaar et al. came up with a simple model for the extraction
from (2). Kou et al. in [27] outlined a technique for identifying the of the parameters Rsh, Rs, Io and n of the solar cell under illumi-
four parameters needed for (2). When V assumed to be 0, the nated conditions using the I–V characteristic of the single-diode
model, an auxiliary function F(v) and a fitting routine [1]. Eq. (47)
short-circuit current can be found by (34),
was used to obtain the shunt resistance, while the remaining three
I L;STC ¼ I SC;STC ð34Þ parameters were determined by the introduction of an auxiliary
function:
The other parameters under the reference conditions, accord-  
ing to the characteristics of the photovoltaic module can be P ðV Þ ¼ V  V a ln I ph  I ð46Þ
500 A.M. Humada et al. / Renewable and Sustainable Energy Reviews 56 (2016) 494–509


dV Eq. (56) is then used to calculate the shunt resistance.
Rsh ¼ Rsho ¼  ð47Þ
dI I ¼ ISC "
 #1
dI I or
Rsh ¼  ð56Þ
where Va denotes a random value of the voltage. By using (3) dV I ¼ ISC nr V T
minus the last term and by replacing V with I, Eq. (48) can be
obtained.
  3.3. Three-parameter model
F ðI Þ ¼ aI þ b ln I ph I þ co ð48Þ

where 3.3.1. Model of Zhang, based on single-diode model

Zhang et al. devised a method in [31], based on the single-diode
a ¼  RS ; b ¼ nV T and c ¼  nV t I o ð49Þ model, for determining the parameters of a solar cell by means of
The curve F(I) vs. I can be used to obtain the series resistance, the single I–V characteristic at a stable level of illumination and
the Lambert W function. As can be seen, (57) is a straightforward
the ideality factor of the diode and the reverse saturation current.
equation with only three parameters, namely n, Rs and Rsh, which
To plot the curve, the values of F(l) were computed for each point
can be ascertained by employing the numerical fit method. The
(V, I) at a stable temperature and for a value of Va. Chegaar et al.
initial value for the shunt resistance can be obtained by using (58)
took into account the integer values for Va from 1 to 5 [1].The
and the linear dependency dV/dI, while the values of the series
photo-generated current was regarded as being roughly equal to
resistance and the ideality factor, n, of the diode can be obtained
the short circuit current.
from the intercept and gradient. Eqs. (59) and (60) can be used to
calculate the saturation current and the photogenerated current,
3.2.4. Model of Khan, based on single-diode model.
respectively.
Another model which is based on the single-diode model, was n


o
evaluated to predict the influence of the illumination level on the  V OC
I ¼ nV RS V OC
RS LambertW nV T I SC  RS þ Rsh exp nV T
T
:expnV1 T RS I SC þ RSRþsh VRsh
solar cell parameters of a c-Si solar cell in [29]. The PV cell para-
meters, namely Rsh, Rs, n, and I0, were obtained analytically by V Rsh V
þ  I SC  ð57Þ
employing the values of Isc, Voc, Rsc, Roc,Vmpp, and Impp.The values of RS RS ðRS þ Rsh Þ
I and Impp, which had been obtained experimentally, increased
linearly at different rates as the Pin increased. dV nV T
 ¼ ð58Þ
dI I SC I  ½V RS ðI SC  I Þ  n
Rsh ¼ RSC ð50Þ
 

  nV OC  I SC RS V OC
V m þROC I mpp  V OC I o ¼ I SC  exp  ð59Þ
RS ¼ ROC     ð51Þ RSh nV T
I m þ ln I SC  I mpp  lnðI SC Þ :I SC 
 
V OC V OC
  I ph ¼ þ I o exp 1 ð60Þ
V m þ ROC I mpp  V OC RSh nV T
n¼    ð52Þ
ln I SC  I mpp  lnðI SC Þ :V T

 3.3.2. Model of Kiran, based on single-diode model
nV T V OC Kiran devised a method which is based on the single-diode
Io ¼ exp  ð53Þ
ðROC  RS Þ nV T model, for ascertaining the parameters of a solar cell under illu-
mination conditions [19] by using an approximation equation
3.2.5. Model of Kaminski, based on double-diode model. derived from (2) to eliminate the saturation current, and by
Kaminski et al. used the single-diode model in dark conditions regarding the shunt resistance as being infinite, thus formulating
to ascertain the parameters Iod, Ior, nd, nr, Rs and Rsh of the solar cell (61). Based on this assumption, it is obvious that the results
[30]. An analysis of the I–V characteristic of the solar cell in dark obtained by this method differ from the expected values as the cell
conditions is carried out on two regions: the first region denoting ages. This is of significance in studies concerning the aging of PV
cells.
the higher section where the series resistance and the diffusion
 
mechanism are significant, and the second region denoting the I SC  I I SC RS V OC
V ¼ V OC  IRS þ nV T ln þ exp ð61Þ
lower section where the shunt resistance and the recombination I SC nV T
mechanism are significant. The parameters Iod, nd and Rs are
Eq. (61) only has three parameters, namely Rs, n and is, which
determined by means of the first section, while the linear
can be calculated from the experimental data. The photo-
regression of (54) is used to define the series resistance and the
generated current can be derived as I [32] as equal as I [17].
ideality factor of the diode:
 
1 ln I=I 1 V V1 3.3.3. Model of Arcipiani, based on single-diode model.
y¼ ð  RS þ X Þ; y ¼ ;X ¼ ð54Þ The generalized area method was devised by Arcipiani [33].
nd V T I  I1 I  I1
The solar cell parameters, comprising the ideality factor, the series
where (V1, I1) represents a point on the first section of the I–V resistance and the shunt resistance of the diode, can be deter-
characteristic of the solar cell. If the correlation coefficient is poor, mined through this method, which involves the calculation of the
then the value of I1 must be increased. In order to estimate the area between the V and I axes and the I–V characteristic of solar
saturation current, Io, ln I must be plotted against the function of cell using (57). The following expression was used for the single-
V- IRs. The parameters Ior, nr and Rsh can be obtained from the diode model of the solar cell:
second section of the characteristic curve. The linear part of the


  rI SC V OC
lower section of the I–V characteristic is obtained by the least A ¼ I ph þ Io ðV OC  rI SC Þr þI SC ð1 þ gr Þ  V T n þ V OC g V T n 
2 2
square method in (55).

  ð62Þ
VD
I ¼ I or exp ð55Þ where r denotes the Rs and g the Rsh. By taking into account the
nr V T
generally accepted approximation of gr { 1, Io { Iph and IscEIph [29],
 A.M. Humada et al. / Renewable and Sustainable Energy Reviews 56 (2016) 494–509 501

(57) becomes where (Vmpp,1, Isc,1) is derived from the I–V characteristic mea-
I SC 1 V OC 1 I SC V OC  A sured for one sun illumination, and (Voc,0,1, Isc,0,1) are derived from
y¼ rþ VT nþ g  V T gn; y ¼ ð63Þ the I–V characteristic measured for 0.1 sun illumination. The fol-
2V OC V OC 2I SC I SC I SC V OC
lowing equation can be used to calculate the ideality factor of the
diode:
3.3.4. Model of Khatib, based on single-diode model.
V OC;1  V OC;0;1 1
In another study [34], three parameters (Io, IL, and n) were n¼   ð72Þ
considered and derived experimentally before being compared to ln I SC;1 =ISC;0;1 V T
the theoretical values. Following this, the mathematical expres- In which, the average between the maximum power point
sions were derived according to the actual parameters in order to (MPP) and Voc is taken.
come up with a perfect mathematical model for the projected Bowden and Rohatgi postulated in this model that the exter-
plan. The equation below describes those parameters: nally apparent RS is not constant; rather, it varies with illumination

 
qV D level and electrical load. In addition, the ideality factor, n, which
I ¼ I L I o exp 1 ð64Þ
nkT should be constant, is affected mainly by variations in temperature
level mainly [37]. In practice, a model has to be recalculated,
The details of the parameters are then outlined in the following
that is, estimate the values of RS and n again, for every condition
equations:
of irradiance and temperature. To avoid uncertainty in the appli-
T cation of corrective methods, in [21], De Blas et al. validated their
n¼ ð65Þ
K1 model by using ISC and VOC values known under specific conditions
where K1–K5 denotes the coefficients in these equations. of temperature and irradiance.

q
K1 ¼ ð66Þ 3.4.2. Model of Priyanka, based on single-diode model.
nk
As shown in the equation below, the semi-logarithmic Isc–Voc
I L ¼ ðK 2 þ K 3 :T ÞG ð67Þ characteristic can be used to attain the ideality factor of the diode
and the reverse current. The short circuit current and the open


K5 circuit voltage must be established for various levels of illumina-
I o ¼ K 4 :T:exp  ð68Þ
T tion. The single-diode model is employed in this method based on
the following assumptions and approximations:


3.3.5. Model of Garrido-Alzar, based on double-diode model. V OC
Rsh -1; I SC  I ph; exp ii1 ð73Þ
Garrido-Alzar devised a new solar cell model in [35], based on nV T
the double-diode model, for determining the parameters of the
The semi-logarithmic characteristic can be used to calculate the
solar cell. The method involves solving the equation system
ideality factor of the diode, while the interception of the char-
derived from (4) for four points, namely I_{1}, I_{2}, I_{3}, and
acteristic on the Y-axis is used to calculate the saturation current.
I_{4}, from the I–V characteristic (VI, Ii), and nd1, in the zero order
This method was improved by Priyanka et al., by taking into
approximation for n and Rs [35]. Hence, resulting in the calculation
account for the value of the shunt resistance [38]. Thus, Eq. (73)
of the parameters Iph, Iod, Ior and Rsh. The following equation is used
becomes
in order to calculate n:


V OC VOC VOC
n¼ h n

 o i ð69Þ ln ISC  ¼ ln Io þ ð74Þ
Rsh nVT
V t ln I or þ I ph  I od exp VVOCT  1  VROC
sh
 ln I or

The following equation is utilized to calculate the series resis- 3.4.3. Model of El-Adawi, based on single-diode model.
tance: El-Adawi suggested a method for ascertaining the series and

  
  shunt resistances by means of the single-diode model [39]. Eq. (3)
V5 þ I 5 RS V5 þ I 5 RS
I 5 ¼ I ph  I od exp 1 I or exp 1 can be used to estimate the series resistance, with the approx-
VT Vt nt
imations shown in Eq. (75), and by selecting two points, (Vi, Ii),
V5 þ I 5 RS
 ð70Þ I¼ 1, 2, around the knee of the I–V characteristic of the solar cell.
Rsh


V þ IRs RS I i
The above steps must be performed repeatedly until, for I o Rsh exp 〉〉V; 〈I SC þ I o  I i; i ¼ 1; 2 I SC 〉〉I ph ð75Þ
nV T Rsh
instance, the value of n, with the desired level of precision, is
acquired [35], where n is not equal to 2.
nV T I SC I 2 V 2  V 1
RSC ¼ ln  ð76Þ
I1  I2 I SC I 1 I 2  I 1
3.4. Two-parameter model
The following equation can be used to calculate the shunt
3.4.1. Model of Bowden, based on single-diode model. resistance:
Bowden and Rohatgi devised a method for carrying out two Rsh þ RS V 1  RS
parameters of the solar cell, namely n and Rs [36], using two I–V ¼ ð77Þ
Rsh ðI SC  I1 Þ  RS I1 nV T I1
characteristics that one measured for one sun illumination and the
other one measured for 0.1 sun illumination or ideally where the
level of illumination is such as that the short circuit current of the 3.4.4. Model of Ortiz-Conde, based on single-diode model.
solar cell is the same as Isc,1- Impp,1. The following equation can be Ortiz-Conde devised the integral method [17], which was
used to calculate the series resistance: improved by Kaminski et al. [30]. The linear regression of (79),
which is derived from (78) through integration, can be used to
V OC;0;1  V mpp;1
RS ¼ ð71Þ obtain the series resistance and the ideality factor of the diode. The
I SC; 1  I SC;0;1
single-diode model is employed for the solar cell and the shunt
502 A.M. Humada et al. / Renewable and Sustainable Energy Reviews 56 (2016) 494–509

resistance is assumed to be infinite. 3.5.3. Model of Cotfas, based on single-diode model.


 Cotfas et al. devised this method to ascertain the series resis-
V 1  RS
I ¼ I o exp ð78Þ tance based on the single-diode model [42]. Two I–V character-
nV T
istics are used in this method. One of them which is measured and
Z V another one which is ideal. The ideal I–V characteristic can be
I þ I1 1
y ¼ nVT þ RS X; X ¼ ; y¼ IdV ð79Þ calculated by means of n1 or with the actual values for n and Io.
2 I  I1 V `1
Eq. (86) can be used to calculate the series resistance.
where (V1, I1) is a point on the I–V characteristic of the solar cell,
ΔV V  V mpp
and I is the current under dark conditions. The trapezoidal method RS ¼ ¼ ideal ð86Þ
can be used to solve the integral issue. I mpp I mpp

3.4.5. Model of Jia, based on double-diode model. 3.5.4. Model of Araújo, based on single-diode model.
Jia and Anderson devised a method for ascertaining the series The area method was devised by Araújo and Sánchez in [43] to
resistance and the ideality factor of diode [40], whereby n is ascertain the series resistance of a solar cell through the use of the
regarded as a variable of the I–V characteristic, thus resulting in n1 single-diode model in (2), where Rsh is regarded as infinite, while
at Voc and n2 at Isc. The single-diode model was used in this the ideality factor of the diode has a value equal to one. In this
method with the solar cell being illuminated. The series resistance method, the series resistance is calculated as follows:
can be computed by means of (59), which is derived by employing !
the following approximations where Iph, Isc, Rsh is infinite and V OC A V T
RS ¼ 2  2  ð87Þ
Isc c Io. I SC I SC I SC
   
ðV m 1=V T ðI SC  I m ÞfV OC þ V T ln 1  I m =I SC g  I m where A denotes the area between the I–V characteristic curve and
RS ¼      ð80Þ
I m 1=V T ðI SC  I m ÞfV OC þ V T ln 1  I m =I SC g þ I m the I and V axes.
The following equation can be used to calculate the value of the
3.5.5. Model of Polman, based on double-diode model.
ideality factor of the diode at the maximum power point:
   Polman et al. devised a method for ascertaining the series
n ¼ ðV m þ I m RS Þ=fV OC þ V T ln I m =I SC =I SC g ð81Þ resistance of solar cells [44] through the use of the double-diode
model to describe the solar cell, and by taking into account the
3.5. One-parameter model shunt resistance and the ideality factor of the diode. By means of
Eq. (88), the series resistance can be computed as the average of
3.5.1. Model of El-Adawi, based on single-diode model. the values obtained when n is equal to one and two.
A simple method, commonly referred to as the single-diode
 !1

∂I I ph  1
model, was devised in [39] based on an estimate of the Rs from a RS ¼   ð88Þ
∂V V ¼ V OC nV T
single I–V characteristic curve of a solar cell. In this suggested
 ∂I 
model, which attempts to avoid further graphical manipulation, all where ∂V is derived from the gradient of the linear fitting of
V ¼ V OC
the proposed parameters, except for V and I, were considered to be several points around V is equal to Voc.
constants. In order to avoid complex calculations, the method
was based on the drawing of a curve in relation to the power and
the current or voltage, of which two points, (V1, I1) and (V2, I2), 4. Model evaluation criteria
were selected on a single I–V characteristic curve as follows:
 
1 1 I ph  I 2 V2 V1 In this review, an efficient evaluation was conducted between
RS ¼ ¼ ln  ð82Þ
λ ðI 2  I 1 Þ I ph  I 1 I2  I1 the real curves and the models selected from the literature
(Table 4). This evaluation was based on many benchmarks to
where Iph denotes the photo-generated current, which is proposed clarify the accuracy of the selected models with respect to the real
as a constant. results. The comparison was made between two different models
(a single-diode model and a double-diode model) in the same field
3.5.2. Model of Aberle, based on single-diode model.
(Table 3). All of these criteria showed compared with the single-
In this method, the series resistance of the solar cells is ascer-
diode model, the double-diode model exhibits a very small error
tained through the use of measurements under both dark and
with respect to real results, as shown in Tables 2 and 4. The model
illumination conditions. Aberle et al. [32] suggested the use of Eq.
evaluation is based on the most well-known factors, namely,
(82) to determine the series resistance:
which are the mean absolute percentage errors (MAPE) and the
ΔV V dark;m  V mpp R-square, which is the net of the division of the sum of square due
RS ¼ ¼ ð83Þ
I mpp I mpp
Table. 1
where Vdark,m denotes the voltage that is measured under dark
The specification of the PV module used in
conditions, consistent with the current, Impp, which is measured the current study.
under illumination conditions [41]. Since the impact of the series
resistance in the dark is ignored, the error can be greater than 5%. Parameter Unit
In order to reduce the error, the corrected equation [8] is used to
Maximum power point (PMP) 206 W
calculate the series resistance: Maximum voltage (VMP) 22.89 V
  Maximum current (IMP) 8.93 A
V dark;m  V mpp  I SC  I mpp RS;dark
RS ¼ ð84Þ Open circuit voltage (VOC) 24.5 V
I mpp Short circuit current (ISC) 9.18 A
Height 1425 mm
where Eq. (85) can be used to calculate Rs,dark.
Width 652 mm
V SC V OC Thickness 52 mm
RS ¼ ð85Þ Weight 11.9 kg
I SC
Table 2
General characteristics of the solar cell parameters and its accuracy measurements with respect to I–V and P–V characteristics.

Parameter type Affect on the I–V and Depending on the Depending on the Its effect on the Its effect on the Its effect on MAPE (%) for I–V MAPE (%) for P–V MAPE (%) for I–V MAPE (%) for P–V
P–V characteristics cell temperature irradiance level maximum power short circuit (ISC) open circuit curve with the curve with the curve with the curve with the
mainly mainly is notable current is voltage (VOC) is single-diode single-diode double-diode double-diode
notable notable model model model model

The photocurrent, Iph √ √ √ √ √ 5.94555 6.54677 1.8977 2.2133

The reverse diode √ √ √ √ √ 5.23341 6.11682 1.73352 1.83955

A.M. Humada et al. / Renewable and Sustainable Energy Reviews 56 (2016) 494–509
saturation current, Io
The ideality factor of √ √ √ √ 4.89332 5.93433 1.54833 1.75548
diode, n
The series resistance,RS √ √ √ √ 4.12232 5.8885 1.7577 1.83443
The shunt resistance, √ √ √ – – – –
RSh

Table 3
General comparisons between the single-diode model and the double-diode model.

Model type Accurate in the Accurate in the High computational More applicable and Sufficiently describes the Depending on the cell Depending on the Easy to Applicable for both
normal condition shadow condition effort used for most PV types PV characteristics temperature irradiance implement indoor and outdoor
conditions

Single-diode √ √ √ √ √ √ √
model
Double-diode √ √ √ √ √ √ √
model

503
504 A.M. Humada et al. / Renewable and Sustainable Energy Reviews 56 (2016) 494–509

Table 4
A comparison of different models for the five parameters.

Author Year Double-diode model Single-diode model No. of parameters used Type of tested parameter MAPE (%) R-square

Polman et al. 1986 √ One parameter Serise resistance (Rs) 11.4 0.94333
Aberle et al. 1993 √ One parameter Series resistance (Rs) 4.64 0.98667
Garrido-Alzar 1997 √ Three parameters Diode ideality factor (n) 1.323 0.98879
Jia et al. 1998 √ Two parameters Diode ideality factor (n) 4.356 0.98667
Kaminski et al. 1999 √ Four parameters Parallel resistance (Rsh) 3.895 0.98776
Tivanov et al. 2005 √ Four parameters Parallel resistance (Rsh) 13.667 0.87667
Haouari et al. 2005 √ Five parameters Diode current (Io) 6.3843 0.92445
Celik AN et al. 2007 √ Five parameters Diode current (Io) 8.6667 0.90188
Kaminski et al. 1999 √ Four parameters Photon current (IL) 3.4667 0.98667
Khan et al. 2014 √ Four parameters Photon current (IL) 6.367 0.93556

to regression (SSR) by the sum of square due to the total average proposed by Phang et al. [51].
(SST). All of the factors used in the evaluation has the following
V mp þRS0 I mp  V OC
formula: n¼

  ð91Þ
V mp I mp
( ) V th ln I SC  Rsho I mp  ln I SC  VROC þI
SC  ðV OC =RSh0 Þ
jðRv Rv
 PmÞ Sh
j
MAPE ¼  100% ð89Þ
no: where Vmp is the voltage value at the maximum power point
(MPP); RS0 and RSh0 are the estimates for RS and RSh, respectively;
R2 ¼ SSR=SST ð90Þ Imp is the current at MPP; VOC is the open circuit voltage; and ISC is
the short circuit current. The values of Vmp, Imp, VOC, and ISC are
where Rv denote the real values, Pm is the proposed model, and typically provided by the manufacturer data sheets. By contrast,
no. is the number of tested points. the values of RS0 and RSh0 must be calculated by examining the
current–voltage (I–V) curve. The analytical approach put forward
by Phang et al. assumes that RSh is equal to RSh0.
5. Implementation of single-diode and double-diode models RSh ¼ RSh0 ð92Þ

The above analysis reveals that any model adopted to char- The value of RS0 is adjusted to obtain RS by using Eq. (4).
acterize a PV panel involves several parameters that need to be

 V OC
nV
calculated depending on the experimental data. The number of RS ¼ RS0  th e nV th ð93Þ
these parameters differs according to the adopted model. A single- I0
diode model provides a good compromise between accuracy and where the reverse saturation current, I0, may be calculated by

 V OC 
simplicity [45], and this model has been used by several authors in


previous works [45,46]. The effectiveness of the single-diode V OC
I o ¼ I SC  e nV th ð94Þ
model has been proven, particularly in the simulation of PV RSh
modules with power converters. A two-diode model that con-
Physically, RS and RSh represent the various ohmic losses that
siders different operation conditions provides a better accuracy
occur within the cell. On the one hand, the series resistance
under the normal operation conditions of a PV panel, and this
represents the resistances introduced by cell solder bonds, cell-
model has also been employed by different researchers for mod-
interconnect busbars, cell metallization, and resistances within the
eling PV panels [47].
emitter base region [52]. On the other hand, the shunt resistance,
The approach for calculating the different parameters that
RSh, represents any possible high-conductivity paths across the
characterize the I–V and P–V curves is as introduced in Eqs. (2) and
solar cell pen junction that are created as a result of crystal
(3) for the single-diode and double-diode models, respectively.
damage and impurities in and near the junction [53].
These characteristics can be used to assess the performance of PV
Finally, the photo-generated current, Iph, must to be deter-
parameters by using the general formulas of each model.
mined. One assumption is to assume that Iph is equal to ISC [54]. A
more sophisticated method is to use Eq. (6), as suggested by Phang
5.1. Single-diode model et al.


 !
I SC RS
In calculating solar cell parameters, the analytical approach is RS
I ph ¼ I SC 1 þ þ I o e nV th  1 ð95Þ
commonly used because of its speed and simplicity. By introducing RSh
several assumptions, the complex non-linear relationships that
define the behavior of a solar cell can be reduced to analytically
solvable equations. The performance of these parameters perfor- 5.2. Double-diode model
mance can then be assessed through these equations.
The first parameter, the ideality factor, n, accounts for the dif- The double-diode model equation used is as expressed in the
ferential mechanisms responsible for moving carriers across the Ishaque model [55], and the main equation model is presented in
junction [48]. The parameter n is 1 if the transport process is Eq. (3).
purely diffusion and approximately 2 if the primary process is where the diode factors n1¼ 1 and n2 can be derived from:
recombination in the depletion region. Values are typically selec-
n1 þ n2
ted to be within this range. For example, Carrero [49] suggests a Z1 ð96Þ
p
value of unity, whereas another study proposes an empirical
approach [50]. One approach is to apply the analytical expression where p can be chosen to be greater than 2.2.
 A.M. Humada et al. / Renewable and Sustainable Energy Reviews 56 (2016) 494–509 505

Fig. 7. Influence of series resistance on the I–V characteristic.

Fig. 4. Influence of diode ideality factor on the P–V characteristic.

Fig. 8. Influence of series resistance on the P–V characteristic.

Fig. 5. Influence of photocurrent on the I–V characteristic.

Fig. 6. Influence of photocurrent on the P–V characteristic.

Fig. 9. Influence of the reverse diode saturation current on the I–V characteristic.

The rest of the parameters can be deduced from the following

equations [55]:
power is equal to the experimental one, that is, (Pmax,m ¼Pmax,e) at
I L ¼ I SC ð97Þ
(Vm, Im) point.
The RS value is obtained by a slow incrementation by the same
I SC þ μ ΔT
I o1 ¼ I o2 ¼ hqðV þ μISC ÞΔT i ð98Þ manner as that described in the previous subsection. The expres-
exp KTðA1 þ AOC2 Þ=p  1
OC V
sion of RSh can be written as

RS and RSh are calculated by using an iterative method that is V m þ I m RS

I o1 ¼ I o2 ¼ h
  i ð99Þ
þ I m RS
similar to the procedure proposed by [45], where the relation I Ph  I o1 exp qV m KT þ qVKTmðþp1
I m RS
Þ þ 2  Pmax
Vm
;e

between RS and RSh is used to verify that the calculated maximum

506 A.M. Humada et al. / Renewable and Sustainable Energy Reviews 56 (2016) 494–509

Fig. 10. Influence of the reverse diode saturation current on the P–V characteristic.

5.3. Effect of solar cell parameter variation on PV performance

In this section, the single-diode and double-diode models were

compared with respect to the Monocrystalline PV cell technology
(Kyocera (KC200GT) panel) to analyze the performance of the
parameters. Table 1 lists the data obtained from the manufacturer Fig. 11. A comparison between single-diode and double-diode model with real
data sheets for Monocrystalline PV module at 25 °C and 1000 W/ results based for the parameter (a).
m2. Figs. 3–10 compare the results obtained for different para-
meters with the use of the single-diode and double-diode models
for both the Simulink and the real results.
In constructing the decision vector, varying different variables
have different effects on the characteristic curves of the PV mod-
ule, and the effect of varying the ideality factor on the I–V and P–V
is shown in Figs. 3 and 4, respectively. As shown in these figures,
increasing the ideality factor decreases the values of voltage and
current, and in turn decreases the power at the maximum point.
Figs. 5 and 6 show the effect of varying the series resistance on
the I–V and P–V curves, respectively. This figures illustrate that as
RS increases, the voltage, the current, and the power at the max-
imum point decrease. In addition, varying the values of both the
ideality factor and the series resistance caused a noticeable effect
on the region of the maximum power point. Figs. 7 and 8 show the
effect of varying the photocurrent on the I–V and P–V curves,
respectively. This figures illustrate that as IL increases, the voltage,
the current, and the power at the maximum point also increase. In
addition, the effect of the reverse diode saturation current, Io on
the I–V and P–V characteristic curves also studied and the per-
formance results noticed as in Figs. 9 and 10, it shows that as the Io
increases, the voltage, the current, and the power at the maximum
point also increase. Finally, the effect of varying RSh on the I–V and
P–V curves of a PV module were also studied, and this effect was
found to be barely noticeable. Moreover, general characteristics
and specifications of the solar cell parameters and its accuracy
Fig. 12. A comparison between single-diode and double-diode model with real
measurements with respect to I–V and P–V characteristics shown results based for the photocurrent (IL).
in Table 2. The results of the comparison between these para-
meters accuracies showed that the double diode model, in general,
exhibit better accuracy compared with the single-diode model and 6. Discussion
for all DC parameters used. The comparisons were performed on a
Kyocera (KC200GT) panel under standard test conditions. This This review discusses and classifies the extraction of DC para-
panel was also selected for the validation of the results of the meters (IL, Io, Rs, Rsh, and n) of solar cells based on single-diode or
slected models. double diode models. This discussion explores both theoretical and
The analysis shows that the parameters of the double-diode experimental approaches to determine the importance of the DC
model exhibit the best match with experimental data, a general parameters of solar cells. The I–V characteristic is an important tool
comparison listed in Table 3. The reason is that the double-diode for determining the above quantities, and it can be measured under
model expresses a better accuracy than the single-diode model both illumination and darkness conditions. The majority of existing
under normal and shadow operating conditions. methods use the I–V characteristic obtained under illumination
 A.M. Humada et al. / Renewable and Sustainable Energy Reviews 56 (2016) 494–509 507

Fig. 15. A comparison between single-diode and double-diode model with real
results based for the diode current (Io).
Fig. 13. A comparison between single-diode and double-diode model with real
results based for the series resistance (Rs).
characteristics) than the single-diode model, as shown in Figs. 11–
15 [4,47].
The first five models that are presented in this paper allow the
determination of the five parameters: Iph, Io, Rs, Rsh, and n. The
subsequent models then allow the determination of a part of these
parameters, such as four, three, two, or even only one parameter
(i.e., series resistance, which is the most commonly taken parameter
of solar cells). The values of Isc and Voc, and implicitly Vmpp and Impp,
can be determined from the experimental data [56].
Most of the models that allow the determination of all five
parameters use the least-squares numerical techniques suggested
in Eqs. (2) and (3). Consequently, the non-linear fitting procedure
becomes complex. With the approximation RsI { V, Eq. (2)
becomes a direct equation, and the fitting procedure becomes
simpler. Such approximation holds for a solar cell with small area,
which implies that the current is small for low-level illuminations.
By using Lambert W-function, Eq. (2) becomes an explicit equation
where I is I(V), [57] and the fitting procedure simplifies the
approach. The extraction process is easier when implemented
on consecrated software such as MATLAB, among other soft-
ware. In MATLAB, only a few lines of code are necessary for such
purpose [34].
The accuracy of the fitting procedure depends on the selected
fitting algorithm, particularly on the initial values of the fitting
parameters and the confidence interval. The models in which the
Fig. 14. A comparison between the single-diode and double diode model with real
ideality factor of the diode gives a value of one and the shunt
results based for the parallel resistance (Rsh).
resistance is considered infinite must be carefully used. Model no.
conditions, as these are the real operating conditions for a solar cell. 3 is a one-parameter model that shows how the value of the series
resistance changes when the value of n takes the real value or the
Few works have applied the methods that utilize the dark mea-
theoretical value (n ¼1).
surements. One such method is Model no. 5, which is the four-
Solar cell parameters such as Rs, n, Rsh, and IL depend on the
parameter model developed by Jia and Anderson. By contrast,
irradiance levels [58-60]. However, some researchers [10,34] claim
Model no. 2, which is the one-parameter model developed by that these parameters also depend on the operating temperature
Aberle et al., uses both dark conditions and illumination conditions. of the solar cell. The series resistance obtained under dark con-
The equation that mathematically describes the behavior of ditions is underestimated. The series resistance is higher because
solar cells depends on the model chosen for the solar cell. The of the larger lateral electron flow in the emitter under illuminated
most widely used model is the single-diode model because of its conditions, which is the normal operating mode for solar cells.
simplicity. Moreover, this model describes well the characteristics To obtain a clear understanding of these five parameters, they
of the majority of solar cell behaviors. However, the double-diode are tested and evaluated for different levels of illumination and
model exhibits better accuracy (in terms of DC parameter temperatures, as shown in Figs. 11–15. The outcomes of these five
508 A.M. Humada et al. / Renewable and Sustainable Energy Reviews 56 (2016) 494–509

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