Solid State

EXERCISES [PAGES 25 - 27]

Exercises | Q 1.1 | Page 25

Choose the most correct answer.
Molecular solids are _______.
1. crystalline solids
2. amorphous solids
3. ionic solids
4. metallic solids
Solution: Molecular solids are crystalline solids.
Exercises | Q 1.2 | Page 25
Choose the most correct answer.
Which of the following is n-type semiconductor?
1. Pure Si
2. Si doped with As
3. Si doped with Ga
4. Ge doped with In
Solution: Si doped with As
Exercises | Q 1.3 | Page 25
Choose the most correct answer.
In Frenkel defect, _______.
1. electrical neutrality of the substance is changed
2. density of the substance is changed
3. both cation and anion are missing
4. overall electrical neutrality is preserved
Solution: In Frenkel defect, overall electrical neutrality is preserved.
Exercises | Q 1.4 | Page 25
Choose the most correct answer.
In crystal lattice formed by bcc unit cell, the void volume is _______.
1. 68 %
2. 74 %
3. 32 %
4. 26 %
Solution: In crystal lattice formed by bcc unit cell, the void volume is 32%.
Exercises | Q 1.5 | Page 26
Choose the most correct answer.
The coordination number of atoms in bcc crystal lattice is _______.
1. 2
2. 4
3. 6
4. 8
Solution: The coordination number of atoms in bcc crystal lattice is 8.
Exercises | Q 1.6 | Page 26
Choose the most correct answer.
Which of the following is CORRECT?
1. Four spheres are involved in the formation of a tetrahedral void.
2. The centres of spheres in octahedral voids are at the apices of a regular tetrahedron.
3. If the number of atoms is N, the number of octahedral voids is 2N.
4. If the number of atoms is N/2, the number of tetrahedral voids is N.
Solution: Four spheres are involved in the formation of a tetrahedral void.
Exercises | Q 1.7 | Page 26
Choose the most correct answer.
A compound forms hcp structure. Number of octahedral and tetrahedral voids in 0.5
mole of substance is respectively _______.
1. 3.011 × 1023, 6.022 × 1023
2. 6.022 × 1023, 3.011 × 1023
3. 4.011 × 1023, 2.011 × 1023
4. 6.011 × 1023, 12.022 × 1023
Solution: A compound forms hcp structure. Number of octahedral and tetrahedral voids
in 0.5 mole of substance is respectively 3.011 × 1023, 6.022 × 1023.
Exercises | Q 1.8 | Page 26
Choose the most correct answer.
 Pb has fcc structure with edge length of unit cell 495 pm. Radius of Pb atom is
_______.
1. 205 pm
2. 185 pm
3. 260 pm
4. 175 pm
Solution: Pb has fcc structure with edge length of unit cell 495 pm. Radius of Pb atom
is 175 pm.
Exercises | Q 2.01 | Page 26
Answer the following in one or two sentences.
What are the types of particles in each of the four main classes of crystalline solids?
Solution:
The type of particles in each of the four main classes of crystalline solids are:
1. Ionic solids: Constituent particles are cations and anions.
2. Covalent network solids: Constituent particles are atoms.
3. Molecular solids: Constituent particles are monoatomic or polyatomic molecules.
4. Metallic solids: Constituent particles are metallic ions in a sea of electrons.
Exercises | Q 2.02 | Page 26
Answer the following in one or two sentences.
Which of the three types of packing used by metals makes the most efficient use of
space and which makes the least efficient use?
Solution: Out of the three types of packing, face-centered cubic (or ccp or hcp) lattice
makes the most efficient use of space while simple cubic lattice makes the least efficient
use of space.
Exercises | Q 2.03 | Page 26
Answer the following in one or two sentences.
The following pictures show population of bands for materials having different electrical
properties. Classify them as insulator, semiconductor or metal.
 Solution: The picture in the left represents a metal, the picture in the middle represents
an insulator and the picture in the right represents a semiconductor.
Exercises | Q 2.04 | Page 26
Answer the following in one or two sentences.
What is the unit cell?
Solution: The smallest repeating structural unit of a crystalline solid is called unit cell.
Exercises | Q 2.05 | Page 26
Answer the following in one or two sentences.
How does the electrical conductivity of a semiconductor change with temperature?
Why?
Solution:
1. The electrical conductivity of a semiconductor increases with increasing temperature.
2. This is because the number of electrons with sufficient energy so as to get promoted to
the conduction band increases as temperature rises. Thus, at higher temperatures,
there are more mobile electrons in the conduction band and more vacancies in the
valence band than at lower temperatures.
Exercises | Q 2.06 | Page 26
Answer the following in one or two sentences.
The picture represents bands of MOs for Si. Label valence band, conduction band, and
band gap.

Solution:

Exercises | Q 2.07 | Page 26

Answer the following in one or two sentences.
A solid is hard, brittle and electrically nonconductor. Its melt conducts electricity. What
type of solid is it?
Solution:
Ionic solids are hard and brittle. They are nonconductors of electricity in solid-state.
However, they are good conductors when melted. Hence, the given solid is an ionic
solid.
Exercises | Q 2.08 | Page 26
Answer the following in one or two sentences.
Mention two properties that are common to both hcp and ccp lattices.
Solution:
Properties common to both hcp and ccp lattice are the same coordination number of the
particles (i.e., 12) and the same packing efficiency (74%).
Exercises | Q 2.09 | Page 26
Answer the following in one or two sentences.
Sketch a tetrahedral void.
Solution:
Tetrahedral void:

Exercises | Q 2.1 | Page 26

Answer the following in one or two sentences.
What are ferromagnetic substances?
Solution: The substances containing large number of unpaired electrons are attracted
strongly by magnetic field. Such substances are called as ferromagnetic substances.

Exercises | Q 3.01 | Page 26

 Answer the following in brief.
What are valence band and conduction band?
Solution:
1. Conduction band:
The highest energy band formed by the interaction of the outermost energy levels of
closely spaced atoms in solids is called the conduction band.
The conduction band may be partially occupied or vacant.
Electrons in the conduction band are mobile and delocalized over the entire solid. They
conduct electricity when an electrical potential is applied.
2. Valence band:
The band having lower energy than conduction band is the valence band.
The electrons in valence band are not free to move because they are tightly bound to
the respective nuclei.
Exercises | Q 3.02 | Page 26
Answer the following in brief.
Distinguish between ionic solids and molecular solids
Solution:
Ionic solids Molecular solids
1. The constituent particles are charged ions 1. The constituent particles are monoatomic
(cations and anions). or polyatomic molecules

2. The constituent particles are held by the 2. The constituent particles are held by
electrostatic force of attraction between intermolecular forces of attractions such as
oppositely charged ions. London forces, dipole-dipole forces and/or
hydrogen bonds.

3. They are hard and brittle. 3. They are soft.

4. They have high melting points. 4. They have low melting points.

5. They are nonconductors of electricity in 5. They are poor conductors of electricity.

solid-state. However, they are good
conductors when melted or dissolved in
water.
 6. e.g. NaCl, CaF2, etc. 6. Ice, benzoic acid, etc.

Exercises | Q 3.03 | Page 26

Answer the following in brief.
Calculate the number of atoms in fcc unit cell.
Solution:
1. A face-centred cubic (fcc) unit cell has particles at the eight corners plus particles at the
centre of its six faces.
2. Each particle present at the corner of a given unit cell is shared with seven other
neighbouring unit cells. As a result, its contribution to the given unit cell is only 1/8.
Thus, the number of particles present at corners per unit cell
= 8 corner atoms ×1/8 atom per unit cell = 1
3. Each particle at the centre of the six faces is shared with one neighbouring cube. Thus,
1/2 of each face particle belongs to the given unit cell.
Thus, the number of particles present at faces per unit cell
= 6 atoms at the faces × 1/2 atom per unit cell = 3
Therefore, fcc unit cell has one corner particle plus 3 face particles, making total of 4
particles per unit cell.
Exercises | Q 3.04 | Page 26
Answer the following in brief.
How are the spheres arranged in first layer of simple cubic close-packed structures?
How are the successive layers of spheres placed above this layer?
Solution:
Simple cubic close-packed structures are obtained by stacking two-dimensional square
close-packed layers.
So, the spheres in the first layer are placed adjacent to one another to form two
dimensional square close packing (i.e., AAAA type arrangement). All the spheres of the
successive layers are placed exactly above the spheres of the lower layers. This results
in perfect horizontal and vertical alignment between the spheres of various layers.
Exercises | Q 3.05 | Page 27
Answer the following in brief.
Calculate the packing efficiency of metal crystal that has simple cubic structure.
Solution:
Packing efficiency of metal crystal in the simple cubic lattice:
• Step 1: Radius of sphere:
In the simple cubic unit cell, particles (spheres) are at the corners and touch each other
along the edge.
A face of a simple cubic unit cell is shown in the figure.
From the figure, we can find that
a = 2r or r = a/2 ......(1)
where, ‘r’ is the radius of atom and ‘a’ is the length of the unit cell edge.
• Step 2: Volume of sphere:
Volume of a sphere = (4/3π)(r3).
Substitution for r from equation (1) gives:

• Step 3: Total volume of particles:

Because a simple cubic unit cell contains only one particle, the volume occupied by the
particle in unit cell = πa3/6
• Step 4: Packing efficiency:

Thus, in a simple cubic lattice, 52.36 % of total space is occupied by particles and
47.64% is empty space, that is, void volume.
Exercises | Q 3.06 | Page 27
Answer the following in brief.
What are paramagnetic substances? Give examples.
Solution:
The substances with unpaired electrons are weakly attracted by the magnetic field.
Such substances are called as paramagnetic substances.
e.g. Oxygen, Cu2+, Fe3+, Cr3+, etc

Exercises | Q 3.07 | Page 27

Answer the following in brief.
What are the consequences of Schottky defect?
Solution:
Consequences of Schottky defect:
i. As the number of ions decreases, mass decreases. However, the volume remains
unchanged. Hence, the density of a substance decreases.
ii. The number of missing cations and anions is equal. Hence, the electrical neutrality of
the compound is preserved.

Exercises | Q 3.08 | Page 27

Answer the following in brief.
Cesium chloride crystallizes in a cubic unit cell with Cl– ions at the corners and a Cs+ ion
in the centre of the cube. How many CsCl molecules are there in the unit cell?
Solution:

Given: Cl– ions are present at corners of the cube. Cs+ ion is at the centre of the cube.

To find: Number of CsCl molecules in the unit cell

Calculation:
i. Cl– ions are present at the 8 corners. The contribution of each corner particle to the
unit cell is 1/8. Hence, the number of Cl– ions that belongs to the unit cell = 8 × (1/8) = 1

ii. Cs+ ion is at the centres of unit cell. The contribution of a particle at the centre to the
unit cell is 1. Hence, the number of Cs+ ions that belongs to the unit cell = 1
There is one Cl– ion and one Cs+ ion in the unit cell.
Hence, the number of CsCl molecules in the unit cell = 1.

Number of CsCl molecules in the unit cell = 1.

Exercises | Q 3.09 | Page 27

Answer the following in brief.
Cu crystallizes in fcc unit cell with edge length of 495 pm. What is the radius of Cu
atom?
Solution:
Given: Type of unit cell is fcc.
Edge length of unit cell (a) = 495 pm
To find: Radius of Cu atom (r)
Formula: For fcc unit cell, r = 0.3535 a
Calculation: Using formula,
r = 0.3535 a
= 0.3535 × 495 pm = 175 pm
Radius of Cu atom (r) is 175 pm.

Exercises | Q 3.1 | Page 27

Answer the following in brief.
Obtain the relationship between the density of a substance and the edge length of the
unit cell.
Solution:
Relationship between the density of a substance and the edge length of the unit cell:
1. If the edge length of the cubic unit cell is ‘a’, then the volume of the unit cell is a3.
2. Suppose that mass of one particle is 'm’ and that there are ‘n’ particles per unit cell.
∴ Mass of unit cell = m × n …(1)
3. The density of unit cell (ρ), which is same as density of the substance is given by:

Exercises | Q 4 | Page 27
The density of iridium is 22.4 g/cm3. The unit cell of iridium is fcc. Calculate the radius of
iridium atom. Molar mass of iridium is 192.2 g/mol.
Solution:
Given: Type of unit cell is fcc.
Density of iridium (ρ) = 22.4 g/cm3
Molar mass of iridium = 192.2 g/mol
To find: Radius of iridium atom (r)
Formulae:

= 3.849 × 10-8 cm = 384.9 pm

Using formula (ii)
r = 0.3535 a
r = 0.3535 × 384.9 pm = 135.7 pm ≈ 136 pm
Radius of iridium atom (r) is 136 pm.
Exercises | Q 5 | Page 27
Aluminium crystallizes in a cubic close-packed structure with a unit cell edge length of
353.6 pm. What is the radius of Al atom? How many unit cells are there in 1.00 cm 3 of
Al?
Solution:
Given: Type of unit cell is ccp.
Edge length (a) = 353.6 pm = 3.536 × 10–8 cm Volume (V) of Al = 1.00 cm3
To find:
1. Radius of Al atom (r)
2. Number of unit cells in 1.00 cm3 of Al
Formulae:
1. For ccp (fcc) unit cell, r = 0.3535 a
2. Number of unit cells in volume (V) of metal = V/a3
Calculation:
1. Using formula (i),
r = 0.3535 a
∴ r = 0.3535 × 353.6 = 125 pm
2. Using formula (ii),
Number of unit cells in volume (V) of metal = V/a3

∴ Number of unit cells in 1.00 cm3 of

1. Radius of Al atom (r) is 125 pm.

2. Number of unit cells in 1.00 cm3 of Al is 2.26 × 1022.

Exercises | Q 6 | Page 27
In ionic crystalline solid atoms of element Y form hcp lattice. The atoms of element X
occupy one-third of tetrahedral voids. What is the formula of the compound?
Solution:
Given: Atoms of element Y form hcp structure.
Atoms of element X occupy 1/3rd of tetrahedral voids
 To find: Formula of the compound
Calculation: The atoms of element Y form hcp structure.
The number of tetrahedral voids generated is twice the number of Y atoms.
Thus, number of tetrahedral voids = 2Y
The atoms of element X occupy (1/3) of these tetrahedral voids.

Exercises | Q 7 | Page 27
How are tetrahedral and octahedral voids formed?
Solution:
1. Two dimensional hexagonal close-packed layer has triangular voids which is formed by
three spheres.
2. When the triangular voids of the first layer are covered by spheres of the next layer,
tetrahedral voids are formed. A tetrahedral void is surrounded by four spheres.
3. The overlapping triangular voids from the two layers together form an octahedral void.
An octahedral void is surrounded by six spheres.
4. Thus, the depressions in which spheres of second layer rest are tetrahedral voids while
the depressions in which no sphere rests are octahedral voids.

Exercises | Q 8 | Page 27
Third layer of spheres is added to second layer so as to form hcp or ccp structure. What
is the difference between the addition of third layer to form these close-packed
structures?
Solution:
In ccp structure, the spheres of the third layer are not aligned with those of the first layer
or second layer.
Hence, the third layer is called ‘C’ layer. The spheres of the fourth layer get aligned with
the spheres of the first layer. Hence, the fourth layer is called ‘A’ layer. The resulting
pattern of layers is called ‘ABCABC....’.
Exercises | Q 9 | Page 27
An element with molar mass 27 g/mol forms a cubic unit cell with edge length of 405
pm. If the density of the element is 2.7 g/cm3, what is the nature of the cubic unit cell?
Solution:
Given: Edge length (a) = 405 pm = 4.05 × 10-8 cm
Molar mass = 27 g mol-1, Density (ρ) = 2.7 g/cm3
To find: Nature of cubic unit cell

= 4.00
∴ Number of atoms in unit cell = 4
Since unit cell contains 4 atoms, it has face-centred cubic (fcc) or ccp structure.
The nature of the given cubic unit cell is face-centred cubic (fcc) or ccp unit cell.

Exercises | Q 10 | Page 27
An element has a bcc structure with a unit cell edge length of 288 pm. How many unit
cells and number of atoms are present in 200 g of the element? (Density of an element
= 14.44 g/cm3 )
Solution:
Given: Type of unit cell is bcc.
Edge length (a) = 288 pm = 2.88 × 10–8 cm,
Mass of element (x) = 200 g
To find:
i. Number of unit cells in 200 g of element
ii. Number of atoms in 200 g of element
Formulae:

Calculation:
i. For bcc unit cell, n = 2.
Using formula (i),
Number of atoms in 200 g of element

∴ Number of atoms in 200 g element is 1.16 × 1024.

∴ Number of unit cells in 200 g element is 5.80 ×1023.

Exercises | Q 11 | Page 27
Distinguish with the help of diagrams metal conductors, insulators and semiconductors
from each other.
Solution:
 Metal conductors Insulators Semiconductors

Metals are good conductors of Insulators are nonconductors Semiconductors have

electricity. of electricity. conductivity that is
intermediate between
conductors and
insulators.
In metal conductors, the In insulators, the valence In semiconductors, the
conduction band is partially band and conduction band in valence band is
filled and there is no band gap insulators are separated by a completely filled with
or there is overlapping large energy gap called the electrons, and the
between the valence band and forbidden zone. conduction band is
conduction band. empty. However, the
energy gap between the
two bands is smaller than
that an insulator.

Exercises | Q 12 | Page 27
What are n-type semiconductors? Why is the conductivity of doped n-type
semiconductor higher than that of pure semiconductor? Explain with diagram.
Solution:
1. An extrinsic semiconductor, which is obtained by adding group 15 element to an
intrinsic semiconductor which belongs to group 14, is called an n-type semiconductor.
e.g. Silicon doped with phosphorus
2. n-type semiconductor contains an increased number of electrons in the conduction
band.
3. Consider the doping of Si with phosphorus. Si has a crystal structure in which each Si
atom is linked tetrahedrally to four other Si atoms. When a small quantity of
phosphorous is added to pure Si, the P atoms occupy some vacant sites in the lattice in
place of Si atoms. The overall crystal structure of Si remains unchanged.
Four of the five valence electrons of P are utilized in bonding the closest to four Si
atoms. Thus, P has one extra electron than needed for bonding. Therefore, Si doped
 with P has more number of electrons in the conduction band than those in the
conduction band in pure Si. Thus, the conductivity of Si-doped with P is higher than that
of pure Si. The electrons in the conduction band move under the influence of an applied
potential and conduct electricity.
P atom occupying regular site of Si atom

Exercises | Q 13 | Page 27
Explain with diagram, Frenkel defect. What are the conditions for its formation? What is
its effect on density and electrical neutrality of the crystal?
Solution:
• Frenkel defect:
a. Frenkel defect arises when an ion of an ionic compound is missing from its regular
lattice site and occupies an interstitial position between lattice points. The cations are
usually smaller than anions. Therefore, the cations occupy interstitial sites.
b. The smaller cation is displaced from its normal site to interstitial space. It, therefore,
creates a vacancy defect at its original position and an interstitial defect at its new
location in the same crystal. Frenkel defect can be regarded as the combination of
vacancy defect and interstitial defect.
c. This defect is found in ionic crystals like ZnS, AgCl, AgBr, AgI and CaF2.
Frenkel defect
• Conditions for the formation of Frenkel defect:
a. Frenkel defect occurs in ionic compounds with large difference between sizes of
cation and anion.
b. The ions of ionic compounds must be having low coordination number.
• Consequences of Frenkel defect:
a. As no ions are missing from the crystal lattice as a whole, the density of solid and its
chemical properties remain unchanged.
b. The crystal as a whole remains electrically neutral because the equal numbers of
cations and anions are present.

Exercises | Q 14 | Page 27
What is an impurity defect? What are its types? Explain the formation of vacancies
through aliovalent impurity with example.
Solution:
i. Impurity defect arises when foreign atoms, that is, atoms different from the host
atoms, are present in the crystal lattice.
ii. There are two kinds of impurity defects: Substitutional and interstitial impurity defects.
iii. Formation of vacancy through aliovalent impurity:
Vacancies are created by the addition of impurities of aliovalent ions (that is, ions with
oxidation state different from that of host ions) to an ionic solid.
e.g. Consider a small amount of SrCl2 impurity added to NaCl during its crystallization.
The added Sr2+ ions (O.S. = +2) occupy some of the regular sites of Na+ host ions (O.S.
= +1). In order to maintain electrical neutrality, every Sr2+ ion removes two Na+ ions.
One of the vacant lattice sites created by the removal of two Na+ ions is occupied by
one Sr2+ ion. The other site of Na+ ion remains vacant as shown in the figure.