Current

Electricity
[TOPIC 11 E\ectric condu
ction, Ohm's Low
and Resistance
Electric Current
If a cu rre nt I is di str ib ut
Th e di re ct ed ra te of_ flo ed un ifo rm ly over the
w of ele ctr ic ch arg e th ro cr os s-s ec tio n A of a co nd
an y cr os s- se cti on of a ug h uc to r, th en th e current
co nd uc to r is kn ow n as de ns ity at th at po in t is
el ec tri c cu rre nt .
If 6-Q ch ar ge flo ws in
.
tim e M, th en cu rre nt at
an y
\J=IIA.\
Th e cu rre nt de ns ity is
trm .
e t 1s I = lim 6-Q dQ a ve ct or qu an tit y. Its SI
- = - unit
6t ➔ o 6-t dt is ar np er e/m etr e 2 (N m 2
).

Al so \r = ~ = q' l [ ·: q = ne)
Electric C u rr en t in Co
There are following case of
ndu ctors
electric current in conductors
wh er e, n = nu m be r of
ch ar ge d pa rti cle s
co ns tit ut in g th e ele ctr (i) In Case of a M et al lic
ic cu rre nt . Conductor
Th e di re ct io n of th e cu All m et al s (i. e. Cu , Fe ,
rre nt is in th e flo w of Ag , e tc. ) ar e good
po sit iv e ch ar ge an d op co nd uc to rs of el ec tri ci
po sit e to th e di re cti on of ty. Fr ee ele ctr on s are the
flo w of ne ga tiv e ch ar ge caus e of co nd uc ta nce
an d it is re pr es en ted by of ele ctr ici ty in them.
A.
1 A = 1 co ul om b (C) = lC /s (ii) In Case of a Solid
1 se co nd (s)
Conductor
In ca se of so lid co nd uc
Th e cu rre nt is a sc ala r
cu rre nt is am pe re .
qu an tit y. The SI un it of at om s ar e tig ht ly bo un
ar e la rg e nu m be r of fre
co nd uc t.
d to ea ch ot ~e r
e el ec tro ns lI1 th
b:~
to r (i. e. Gr ap hite, et~~ere
to

C u rr en t Density (iii) In Case of a Liqu

id Conductor .
Th e cu rre nt de ns ity at In ca se of a liq ui d co nd •
a po in t in a co nd uc to r uc to r like e1ectro·ve
lyt1c d
ra tio of th e cu rre nt at is th e
th at po in t to th e ar ea of so lu tio ns , ther e ar e po . an d ne ga tl chaldrge10
.
cr os s-s ec tio n of th e co sit iv e . electric fie
nd uc to r at th at po in t. io ns w hi ch ca n m ov e
on ap pl yi ng
co nd uc t.
 I
. current Electricity
c~ApTER 3 · 75

ohm's LOW of resist ance averaged over the temp eratu re range
t1 °C to t 2°C is given by
t temperature, the poten tial difference
Al con sta~ ends of a given metal lic wire ,~U_ =_R_ ___ R
_ _/_R_(-1- --1--,
) \
yacross t e) i·n an electric circui t is direct ly 2 1 1 2 1
ductor .
(con . al to the curre nt flowm g throu gh it.
roporuon Drift Velocity
p l!oc I or V = IR \ It is defin ed as the average velocity with whic h
R::: resistance of condu ctor. the free electrons move towar ds the positive end
where,
·ation of curre nt w.r.t. appli.ed poten tial
. of a condu ctor under the influe nce of an exter nal
the van . h . electric field applied across the condu ctor.
is shown with the elp of follow mg
differenee
graph.
Thus, ~
~
V wher e, -i: = average relax ation time of free electr on,
E = electr ic field, m = mass of the electr on and
e = electr onic charge.
0 The drift velocity of electr on is of the order
No effect of V and I on R becau se as V increa se, I of 10-4 ms- 1 .
increase but R remai ns the same .
Note Those conductors which obey Ohm's law are called Mobility
ohmic conductors while others are called non-ohmic The ratio of the drift velocity of the electr ons to
conductors.
the appli ed electric field is know n as mobi lity.
Resistance of a Conductor It is expre ssed as,
It is defined as the ratio of poten tial differ ence
applied across the ends of the condu ctor to the
\~ µ- =_V_d_/ E
_ =_e_'t_/ m
~\
current flowing throu gh it. Its SI unit is m 2s-1v - 1 .

Mathematically, \R =VI I\
Its SI unit is ohm (Q).
Resistivity of Various
R<sistancecan also be written as \ R = p L
I A
I Material
Resis tivity of vario us mate rial is defin ed as the
where, L = lengt h of the cond uctor , A= area of resist ance of unit cube of that mater ial,
cross · n and
. -sectio p = const ant know n as
res1 t' · '
s lVlty of the mater ial. It depen \ p=m / ne 2-i: \
ds upon the
nature of the mater ial and temp eratu re of the wher e, n = numb er of free electr on per unit volum e.
conductor.
It depends upon the followin9 factors
(i) p =1/n (ii) p =1/'t
Effect of Temperature on
Resistance Colour Code of Carbon
!he resist
relat d ance of a wire and its temp eratu re are
e as Resistance
The colou r code of carbo n resist or rema ins in the
R2 = R1[l + cx(t2 - t1) 1 form of coaxi al rings .
Where, R
t2°c I
and R2 are the resist ances at t °C and The first band repre sents the first signi fican t
, respect' 1 1
ive Y and ex is temp eratu re coeff.icient
. figure , secon d band repre sents secon d signi fican t
 so lved pa pe rs : PHvs,ct
0 Chopterw ise CBSE I

76
an d E
J' 6 fl .
Relat i on be tw ee n he cu rre ntf ow mg thto
res en ts m ul tiplier (i.e . n t . 1 n is _ui
b rwee dr ift veloC1ty o e ec tro &ivc
fig ure an d th ird ba nd rep
.
Th e rel ati on e
th ba nd represents
po we r of ten ). Th e fo ur th e co nd uc tor an d
I nAevd
to ler an ce . Re d Or an ge Yellow by
===

Black Br ow n
I I I n ha ve ,
I I 0
y
Fr om thi s, we ca ~
~
B R
B I
I I I
I 2 3
4 . fo rJll o f Oh m's law
.
It is m icr os co pi c
0 1
Gr ey Wh ite
Vio let
Gr een Bl ue
I I I superconductivity in m eta ls or alloys drops 11
I I Ve ry Good Wi fe . . ·t of ce rta
Th e res1StJ VIthYey are co o
led be lo w a ce rtain
of Gr eat Br it ain ha d
I I I he n
Th is is ca lle d su pe rco
nd uc tivity. It
I I 7 8 9 zer o w
tem pe ra tu red. by pr of.
Ka rn erlingh in 191 I.
6
5 was obser ve
First significant figure some im po rta nt Unit s m (Q )

rrr
Secon d significant figure - Oh
De cimal multiplier (i) Resis tan ce (D -m )
f - Oh m -m et re
Tolerance .. ) Re sis tiv ity - l
R) - M ho or n
(ll or
(iii ) Co nd u cta nc e (l/
iL ) ) isto)r } Si em en ( S)
2
Carbon res
- A lm
(iv ) cu rre nt de ns ity
s ton tir
To ler an ce Un it stretched or compresse
5% NOTE If a condu ctor is
Gold origin al length , then 2
IO % l'= nl ⇒ R' = n R
Silver
20 %
No colour e and R = orig inal resist;
wh ere, R' = ne w res istanc

Conductance and Combinations of Resisto

Conductivity ations of res istors
There are two types of com bin
Conductance Series Co mbin ation
It is defined as the recipr
ocal of resistance of
re nt resistors are
conductor. In this combinat io n, di ffe
/G= l/R / connected en d to en d.
R2 R3 Rn
· -./',/11'#-
siemen (S). The ~'V \/\/ \/l- ~f\ AA .A
A- -.A A1 \A /I.. ·
Its SI unit is mh o (Q-1) or
nductance is n be obtained by the
dimensional formula of co
[M-1L-2Y-3A 2]. Equivalent re sis tan ce ca
formula,
Conductivity
al . I Re q = RI + R2 + ... +~
It is defined as the recipro c of resistivity of a
cond uc tor It .
. is expressed as, cr = lip the se ries combination
· NOTE The total resistance in
Its SI unit is mhOper metre (.Q-m r 1. resistance in the
i~ m~re than the greatest
crrcu1t.
r R . current Electricity
77
c~AprE 3 .

Uel combination 3. How is the drift velocity in a condu ctor

para b' 1ation, first end of all the resistors affected with the rise in tempe rature ?
Ill 1111s. corn d u to one pomt
. an d 1ast d
en of all the
Delhi 2019
ecte
,1rc co
00
connected to oth er pomt.
. 4. I-V graph for a metallic wire at two
. iors are
rcsis R1 different tempe rature s T1 and T2 is as
shown in the figure below. Which of the
l~--- --1\/ VY'{ '---- --;) B two tempe rature is lower and why?
A Delhi 2015

Rn i
I
. alent resistance can be obtained by the
EqtUV •
forillula,
0 v-
s. Graph showing the variat ion of curre nt
versus voltage for a mater ial GaAs is
NOTE The total resistance in parallel combination is less than shown in the figure. Ident ify the region
the least resistance of the circuit.
If n identical resistors each of resistance r are
connected in C D
(i) series combination, Rcq =nr E
B
(ii) parallel combination, Rcq = !__
n
Voltage V-
(i) of negative resist ance.
(ii) where Ohm's law is obeyed.All India 2015

PREVIOUS YEARS' 6. Plot a graph showing the variat ion of

resist ivity of a conductor with
EXAMINATION QUESTIONS tempe rature . Foreign 2015
7. How does the random motion of free
TOPIC 1 electrons in a conductor get affected when
a poten tial difference is applie d across its
0 i Mark Questions ends ? Oelhi 2014
8. Plot a graph showing variat ion of curre nt
1. How does the mobility of electrons in a versus voltage for the mater ial GaAs.
~~~ductor change, if the poten tial Delhi 2014
d ~rence applied across the conductor is 9. Show variat ion of resist ivity of copper
t ou led, keeping the length and
~:.P
0 2erature of the conductor const ant?
~
as a function of tempe rature in graph .
Delhi 2014; All Indio 2014

2, When a POt . . 10. Define the term drift velocity of charge

acr ent1al difference is applie d carrie rs in a conductor and write its
oss the
drift vel _en ds Of a conductor, how 1s.
the relationship with the curre nt flowing
the rela~ci~y of ~he electrons relate d to throu gh it. Delhi 2014
ation time? Delhi 2019
78
terwise CBSE Solved Pa
0Ch□ P pe rs
11
· D ef in e th e te rm ele 2 3 • Two co nd uc tin g wi re s X an d y
ctr ica l conductivit~ of
12
a tn et al lic w ire . W rit
e its SI u n i t . ~ di am ete r b u.t d.iffer en t of s.
· Sh ow va ria tio n of re • in ed in se ne s ac ro ss m at er ia ls, a.tt\~
sis tiv ity of Si wi th a ba tte a.re
te m pe ra tu re in gr ap h. ):u mb er de ns ity of el ec
13 Delhi 2014, 12 tro ns i~ \/ J th.~
th an th at in Y, th en fin
- D ef in e th e te rm mo d th e ... . l s, t~i
bi lit y of charge velocity of el ect ro ns 1n ·
ca r•tie
· rs 1n· a co nd .
· e 1·ts SI unit. th e tw.1.a.t10
. of Ii.,.;(!1,
De lhi 20 14 uc to r. W rit Ail India 2010 0 W1 r
es. . • lft
1 2 4 Tw o id en tic al sla bs , of a giv en
4. H ow do es on e ex
pl ai n in cr ea se in ' joi
re si st iv ity of a m et al ne d to ge th er , 1n
· tw
o . tne ta.1
te m pe ra tu re ? All Ind ia
wi th inc rea se of sh ow n in fig ur es (a) an di ffe re nt w , a.re
201 4c d Cb) . a.Ys, as

tf3
15 . W rit e a re la tio n I ,,.,;r;;.
be tw ee n cu rre nt an d dr ift
ve lo ci ty of ele cti -o ns in
a conductor. Use j~
th is re la tio n to ex pl ai
n ho w th e r~sis~ance
of a co nd uc to r ch an ge
s wi th th e i-1se m
te m pe ra tu re ? All Ind ia (a)
2013
16 . Pl ot a gr ap h sh ow (b )
in g th e va ria tio n of W ha t is th e ra tio of t h
re si st an ce of a co nd uc . e re si st an c
th es e tw o co mb m .
fu nc tio n of its ra di us tin g ~ e as a h at1on s? De lhi 2o,oces of
. Ke ep mg th e len gt ~
of th e w ire an d its te m
co ns ta nt . Fo rei gn 2013
pe ra tu re as 0 2 Marks Questions
17 . Tw o m at er ia ls Si
an d Cu , ar e cooled from 25 . A m et al ro d of sq ua
30 0 K to 60 K. W ha t wi re cr os s-se cti on al .·
ll be th e effect on A ha vi ng le ng th Z h as
th ei r re sis tiv ity ? Fo rei cu rr en t I flov.in~ea
gn 2013 th xo ug h it w he n a po
18 . W he n el ec tro ns dr te nt ial clifference\
ift in a me tal from V vo lt is ap pl ie d ac ro
lo w er to hi gh er po ten ss i t s en ds (figure 1,1
tia l, does it me an No w th e ro d is cut pa
th at al l th e fre e ele ctr ra llel to its l encth ··
on s of th e me tal ar e in to tw o id en tic al piec .,
m ov in g in th e sa m e di es an d )o in ed as
re cti on ? Delhi 2012 sh ow n in fig ur e II . W
19 . Sh ow on a gi ·ap h, th ha t po te nt ia l
e va ria tio n of di ffe re nc e m us t b e m
re si st iv ity w ith te m pe . ai nt ai ne d across the
ra tu re for a ty pi ca l le ng th of 2 Zso th at
se m ic on du ct or . Delhl 201 th e cu rr ent in the roo
2 is st ill I ?V
I< )I
20 . Tw o w ire s of eq ua l
le ng th , on e of co pp er
an d th e ot he r of m an ga
ni n ha ve th e sa m e )I \)
re si st an ce . W hi ch wi re A \ I \
is th ick er ? I
All Ind ia 201 2 (I)
21 . D ef in e re sis tiv ity of
a co nd uc to r. W rit e its
SI un it. All Ind ia 2011 26 . U si ng th e co nc ep t O f dr ift ve lo citY of
22 . A w ire of re sis ta nc
e 8 Q is be nt in th e ch ar ge ea rn•er s m · a co nduct or . d~duce th,
:
fo rm of a cir cle . W ha t
is th e ef fe cti ve re la tio ns hi p be tw ee cu rr en t de nsitY @ \.
. tiV
. . n \hi o,sc
re sis ta nc e be tw ee n th re sis f th co nd 2
e en ds of a di am et er 1t y o e · uc t or . ~
O
f
AB ? 27 . Es tim at e th e av er ag dr1· ft sp ee d o .
. Delhi 2010
· n e l ec t. Se_1n a C op pe
co nd uc tio r wi re 0: ,.:
ro n - ~rr\-.,..,
- , rn-<> c.:v · .:
cr os s- se ct ·io na l a r· e a l O x l 0
· th e de~:,-it:..'',l•

a cu rr en t o f l .b- A · A ss um e
co nd uc tio n el ec t1 ·o ns b g )( l 0:!tni ·
to e
All Ind ia 20 14
cHAPTER 3 : Current Electricity
79
or Estirnate. the1ave rag e dri ft speed of
nduct1on e ectrons m .
co a copper wire of 34 . Th e sequence of coloured han
. al
cross-section are a 2.5 x 10- 7 2 ds in lwo
m carrying a carbon res isto rs Ri and R is
current of 1.8 A. As sum e the den (i) brown, green , blu e and
2
sity
conduction electrons to be 9 x 102 of
sm -3. (ii) orange, black, green.
~ Fin d the rat io of the ir res ista nce
Estimate the average_ dri ft spe Delhi 2010C
s.
0 ed of
r conduction ele ctr ons m a cop
per wir e of
cross-sectional are a 2.5 x 10- 7 2
m car ryi ng 0 3 Marks Questions
a cur ren t of 2.7 A. As sum e the
den sity of 35 . Show on a plo t, var iat ion of
conduction ele ctr ons to be 9 x res isti vit y of
1Q28 m- 3. (i) a conductor and (ii) a typica
Ml India 2014 semiconductor as a function of
l

2s. Draw a plo t sho:-7ing the var iat ion of tem per atu re.
resistivity of a (1) con duc tor and Us ing the expression for the res
(ii) semiconductor, wi th the inc isti vit y
rea se in in ter ms of num ber den sity and
temperature. How does one exp rel axa tio n tim e between the col
lai n thi s lisions,
behaviour in ter ms of nu mb er explain how resistivity in the cas
den sity of e of a
charge car rie rs an d the rel axa conductor increases while it dec
tio n time? reases in a
Delhi 2014C semiconductor, with the rise of
29. Derive an exp res sio n for the tem per atu re. All India 2019
cur ren t
density of a con duc tor in ter ms 36 . (i) Defin e the ter m con
of the dri ft duc tiv ity of a
speed of ele ctr ons . Foreign 2014 metallic wire . Wr ite its SI uni
t.
30. Define mobility of a cha rge (ii) Us ing the concept of fre
car rie r. Wr ite e ele ctr ons
the rel ati on exp res sin g mo bil ity in a conductor , derive the
in ter ms of exp res sio n for the conductivity
relaxation tim e. Give its SI un of
All India 2013C
it. wire in ter ms of nu mb er den sity a
and rel axa tio n tim e . Hence, obt
31. A conductor ofl en gth l is con ain
nected to a the rel ati on bet we en cur ren t
DC source of po ten tia l V. If the den sity and the app lied electr
len gth of ic
the conductor is trip led by gra field E. 2010
du all y
stretching it, kee pin g V con sta
nt, how will 37 . (i) Define the ter m of dri
(i) drift spe ed of ele ctr on s and ft velocity.
(ii) On the bas is of ele ctr on dri
(ii) res ista nce of the con duc tor ft, derive
be an exp res sio n for res isti vit y of
affected? Jus tify you r ans we r. a
conductor in ter ms of nu mb er
Foreign 2012
den sity of free ele ctr ons and
32. (i) You are req uir ed to sel rel axa tio n time. On wh at factor
ect a car bon s
res isto r of res ist anc e 4 7 kQ ± does res isti vit y of a conductor
10% from depend?
a lar ge collection. Wh at sho uld
be the (iii) Wh y alloys lik e Co nst ant
sequence of colour ba nd s use d an _and
it? to code Ma ng ani n are use d for ma km
g
(ii) Write the cha rac ter ist ics of sta nd ard res isto rs? Delhi 2016
ma ng ani n
which ma ke it sui tab le for ma
kin g 38 . Fin d the rel ati on bet we en dri
ft velocity
sta nd ard res ist anc e. Delhi 2011; Fore and rel axa tio n tim e of cha rge
33 ign 2011 car rie rs in
· Plot a gra ph sho win g tem pe rat a conductor. A con duc tor of len
ure gth Lis
dep~ndence of res ist ivi ty for a con nec ted to a DC sou rce of em
typ ica l f E. If the
semiconductor. How is thi s beh len gth of the con duc tor is trip
avi ou r led by
explained? Delhi 2011 str etc hin g it, kee pin g E con sta
nt,
exp lai n how its dri ft velocity
would be
affected. Delhi 201s
 ·se
80 0 cnopterw1 cesE so\ved Papers •

n e tw
43. A V o r k o f r e s i ~ t o r s i s
6 batter connec
~~as sho y of internal resis te
wn in the t °- tci
figure.
4Q a.n.t1: cit
12.Q,

-._n t"d\o 2m (i) C o m p u

s te the equ
40 . resistance ivalent
,\ \ D Pd u c o f t h e
€ th e r ela . b t e
n current I (ii·J\ O b t a in t h network.
n;~,. ng t1
Lhrou gh a0n e we e v o l t a ge drops
ve io c\\S v conductor a d drift VCD . fo re ig •
vAB
o n n 2010
, n \ L ~u r • d f tb e e le c tron s . 4 4. C a l c u an.u
e ~ho w s a
plo t of c u rr . l a t e t1:e s
t h r<'u ~h th I fiowm th e 2 Q r e t e_a d y
e c e
th e u m c> t. r os s -s e c tion of a w
n t . g
us s i s t o r i n c u r _ r e n t through
U s e th e plo ir e v~rs in the figu the circu
flow m ~ m t to fit:d th re. i t shown
1O th rou g e c arge
h tb e wn e 2 Q.
.
A
B

3 Q.

,,, ,- -- - -
,
4 Q.
- --
·o l (S) A lllndio 20,s
4 1 . t) l :·t n
e r t!ll'lXl\llo c 6V
n n 2 .8 D.
d n f:m ~ m m e of the fr
!\ c<n d ee elect ron
s
f r."" d r .f1 , u c
t"\oc-1\\ of fr
to r . Ho w n
ee electro n
is r el a ted t
o 0 5 Marks Q
Foreign 20\0
r , \ n t. c n to
d s? U uestion
'-'' t."<'tn t '.'\ \ T t>du c-<> 1b e expression se this 45.
~I lf ldl O 2O
t> fh t w u
y of thE> m fo r th e (i) D e r i v e
U ate r ia
l. a n expre
42. velocity o ssion for
drift
,1 De n , e \h r r elan conducto f e l e c
r . Hence,
t r ons in a
dt"th n y J a on b etween
cur re n t d e d u c e Oh ,
~;:ss cu~nt
a
n d -pote n ti
a l d il le ~ n
ca r r y ing co
ce V
l aw .
(ii) A w i r
e who . l
n,s
g th I, ar t·a
number den of cross -sectio uctor of
n d i s i n c r e a s s e c r o s s - s e c t i o n \sllren
i n g l i ne a
ln) Rs n ma
&itv n of r_ n A and th end to th rl y froroti 00e
\.e th .J
tr _ l
ee e e e o t h e r , 1. d
oon dueb o n e ave-rao drif ctrons e across a b s co nnec eW "
elee tron!:)sei attery of bic1
n t speed .
1

ttO!>:,.•sec tio of the fol V v?? 5 ·

. n a l a r e a l Oa
coppt r wir
o~
r e m a i n cl o w i n g q ~ a n ~ ~ :~
c.t rrymg a onstant i re?
th e num cur r e n t of 1 5 A
- x. 1 0 n
? e of (a) D r i f t s
pe
nt
be r
d
d ~ t~ n& ls ensit f . . \~s (b) C u r r e e d
9 -' 1OJ : _; onducti u m e t h a t (c) E l e c t r
nt densit
y
on ic curren
1~ (d) E l e c t r t
ic field
Justify y
o u r a n sWe rn~ o \h l~
·
V

· ist~ncc becau se
~ Explanations 5. (i) Uli is Ihe region of negauve res · • .
neoa trve · (1/2)
the slope of cmve •111 l h'1s par tis. "
Thl' 111 0 t,ilit)' l1f dcr trom in ,1 rnnrh Ktor is givrn ( ii ) HC is the region where Ohm's Jaw _is ~beyed
1. becau se in this part, the current vanes !,nearly
n with the volt age . (1/2)
µ = -
111 6. The resistivi ty of a metallic cond uctor i~ given by
,,·hcrl', ,· =charge on ckc tmn . m = mass of p = p11 [l +a(T-7;1) 1
t>lccrnim .ind T = re\c1xa tion time. w here, Po = resistivity at reference temperature,
Al~l), T "" T. T0 = reference temperature
~ut here temperatu re (T) is kept con stan t. As a nd a= coefficient of res istivity.
mobility is independent of potential difference, so From the above rela tion, we can say that lhe graph
there i~ no change in it. (1 ) between resistivity of a conductor with
temperature is straight line. But. al tempera tu re,
2. A,·era)!e drift velocity.
\'j =: 1

where. e = charge on electron.

much lower than 273 K ( i.e . 0°C). the graph
deviates considerably from J straight line as shown
in the figure .

m = mass of electron. tfa

E = electric potential or field acros s conducto r co
I 04
and t = relaxa tion time . (1) 0
~

J. The average dn·rt vc I OC1t}

. 1 • vd = -eF a..
T c:- 0.2
111 >
5;
where. T = relaxation time
~ 0 I-- - +------+--+
The relaxation timl' i\ directly proportional to the a: 50 'IO0 150
temperature of rnnd11ctor J. t remperature T (Kl --+ (1)

T "' /
7. Conductor~ rn nt;iin free electrons . In the absence
"""' I of ,1ny ex tcrnil l electric field, the l'rcc electrons arc
~o. the drift vclnti l) 11Hrc.1,c, \\tlh 11 ,t 111
111 r.i nrlo ,n 111ot ion ju~I like the molecules of gas
1empcra1urc. ( 1)
111 c1 conl;iiner and the net rnrrenl through wire is

4. Cons1clc1 the figu re. zero If the ends of the wi re arc connected to a
ba ttery, ;in electric fie ld (F.') wil l setup at every
T flOH lt wnhi n the wire Due 10 electric effect of the
I battery.the elcctrom wi ll experience a force in the
d I rectio n oppo\ il e lo f:' (1)

8. Variauon ol current vem1s voltage for the ma terial

GaA\ 1\ .1, fllll ow\
Negative
0 V Non-line : resistance :

Since. slope of I > slope of 2.

region region i j
I
I
I
11 / v1 > J2 I \12 => \12,1 z > vi f t 1 i
Ri > Ri i
I
V/1 = R (1/2) I
I
I
Also. we know that resis tance is directly
proportional to the temperature .
·r hertlorc, T2 > Ti. (1/2)
Voltage (V)
(1)
82 • tcrn pcrat u re cauc;ec; great er eleqr
(f

1ncrcas1n,,d LO incrcac;cd therm al vibra r ()l1

14, riMl lJC . l ( . ton ~
~cattc nd hence, resis ttvi y p rcC1_p roca 1 of ()f
funclion of I5 atorns a. . of meta ls incre a se,;; linea rly ""1th
9. Graph of rcsis1ivi1y of copper as_a. . of mcra cond
ucn\11 LYl
lcmp c rnt11rc is given below (rcsis1JVJIY ). rr,pcra tu rc. (1)
. I rnpcraiurc
.
incrcn
. h .
scs wit increa se in c te . betwee n cu rre n t and drift veloc it
on . a cond uctor 1s given by Y (Jf
E 15, Relau
C: cJecuons in
[=An £ VJ
=
V i R = Anev
"

6 ~
o.4
V
I
oc -
a. d R
:f 0 .2
where , I = curre n t.
in
'iii A= area of cond uctor .
~ L ---+- ----+ --~-:; ;-- n = num ber d cn-; ity of clecL rons
0 50 100 150 (1)
Temperature T (K) - vd = drift ve locity
and
• y of charge
'th Lhc incrcc.J'iC in tcmpc -r,1t1 1r,· n f a nict J ll IC
10. Drift veloc ity The terr~ drif! veloci\he average WI
carriers in a conductor 1s defined as IOng the condu ctor, rcs1<;ta ncc Jn ( rc•;i<,l ''i ,ind hence dnft
velocity acquired by the free electro ns a tial velocity dccrca 'iC'i .
d nder a poten 'r,m (ij
length of a metal lic con uctor u of a ( ond11 ctq r nf knl,!r h / Jn..l
e
difference applied across the conductor. 16• Resistanc " radius,
is given by
Its relationship is expressed as /{ = p / , . I. e R ,,
I
I rr:r "' r2
Vd= -
neA
where, I is current flowing through the conduc~or, :. The variat ion of resistance vj a cn1-1du c1 ,ng N!re (lS a
n is concentration of free electrons, eis electronic Junction of its radius 1s given as,
charge and A is cross-sectional area. (1/2)

11. The electrical conductivity (cr) of a metallic wire is i

defined as the ratio of the current density to the R
electric field it creates. Its SI unit is mho per
metre (.Q
1.-mr (1)

12 · The resistivity of a semiconductor decreases 0 r-

• ' exponentially with temperature.
I

17. In silicon, the resis tivi ty incre ,1 )e) wilh decrease

The variation of resistivity with temperature for in temp eratu re . (1/'l}
semiconductor ( Si) is shown in figure below.
In coppe r, the resis ti vi ty dccn :..1ses wit h decrease
ti
a.'O
.,?;,§
in temp eratu re .
18. No, the drift spee d o f e lect rons is superposed 0~
CTnl
6

·5 .2 ri:
the rand om velo citi.c s of t h e decc ron s.
~E
'iii~
~-
Ql.._ 19. Refer to Sol. 12 on page 82 .
er o
20. Given that resis tance of bo th th e wires are of
T-
Temperature equal lengt h, so

13. The mobility of charge cam . (1) RMn = Rcu ..I'

defined as the magnitude ers a condu ctor '.n
is PMn f MI1 _
- -~ - Pcu - -
lcu
current carrying cond of dnft velocity (in a AMI1 Acu . eof
uctor) per • h wires ar
- Drift velocity ( ) unit electric field . d.
Accor mg to the ques tion , bo th l e
µ - 11,t qt
Electric field (E) == ; ; equal lengt h, so /Mn = /c u
where, t is the avera e . : . From Eq. (i), we ge t
ch g drelaxat1on time and m . sca.ot
or p/ A == co n
the mass of the P P
arge Particle 15
(1/2)
--..M!!.. =~
Its SJ Unit is m2;y. or ms- I N-1. AMn Acu
s C.
(1/2) or Ac u = Pc u or p oe A
AMn PMn
V

cHAPTER 3 : Current Electricity 83

\\·c i-no"· 1ha1. copper is bet!er conductor tha n · of all, 1'den tfy the
,nl!,rnin. 1herefore. copper will have less• 24. In these types of questions, first 1
111<> • combination in which the metal slabs are
rc, isti,it'"- connected and then apply the formula for
i.e. Pcu < P, 1n equivalent resistance accordingly.
sr. A,, 1n > Acu [·: pcx: A] Let the resistance each of conductor is R.
That means ,,i re o f m anganin will be thicker Case I According to Fig. (a) , the resistances are
than Lhat of copper. (1) connected in series combination, so eq uivalent
resistance of slab, R1 = R + R = 2R.
21 The resistivity of the material of conductor is Case II According to Fig. {b ), the resistances are
· ~qua! to 1he re_sistance _offered by the conductor connected in parallel combination, so equivalent
of same material of unit length and u ni t resistance,
cross-sectional area. The resistivity of a ma!erial I I I I 2 R
of the conductor does not depend on the - = - + - ⇒ - = - ⇒ R2 = -
R2 R R R2 R 2
geometry of the conductor.
Ratio of the equivalent resistance in two
SI uni! of resisti,it:1 is ohm-metre (Q -m). combinations is
(1/2 + 1/2 = 1)
!i=~=4
R1 (R/ 2)
22, The resistance of the ,~hole w ire is 8 Q , w hich is
bent in the form of a circle. Vle have to find the
⇒
effective resistance between the ends of diameter
(1)
AB. Diameter of 1he circle divides the circle into
25. From Ohm's law, we have
nrn equal parts. The resistance of each such part I
"ill be 8 ' 2 = 4 Q . V =IR ⇒ V =lp- [":R= p(l! A)] ... (i)
A (1)
(Resistance R oc length of wire !, if length is When the rod is cu t parallel, and rejoined by
halved. then resistance will also become half.) Jenoth the lenoth of the conductor becomes 2 1,
" , " A
From the figure, it is clear that both the parts are whereas the area decrease to-. If the current
in parallel combination. So, effective resistance 2
benveen A and Bis given b y remains the same, the potential changes as
1 1 1 V' = lp_l!_ = 4xlp_!_ =4V [using Eq. (i )]
- = -+- Al 2 A
R_,;B R1 R2
The new potential applied across the metal rod
I will be four times the original potentia l (V) . (1)
⇒ - = -+-
R_,.B 4 4 26. As we know that, I = neAvd

'--eJ-, lQ
Also, cunent density J is given by
1 =1/A
ne 2
IJl=--r lEI I ei:El
l·.- VJ=-;;; J
(1)

4 rn
⇒ R'.B = - - = 2D
. I+1 (1) or J = 0/p)E [·: p = m / ne2t]
(1)
23. Given that number densiry in X .
27. Given, cross-sectional area, A = l .Ox 1o-7 m 2
= 2 x i\umber density in Y
Current, I = 1.5A
=> nx = 2ny ... (i ) )8 -3
Electron density, n == 9 x 1o- m
As current is common for the entire circuit,
Drift velocity, vd = ?
i.e. I== nxAx e {vd)x = nyA y e (vd)Y We know that. I = neAv_; (1)
Also, the diameters of the wires are sam e I 1.5
Ax == A y ⇒ vd = neA = 9 X 10 28 X 1. 6 X 10- 19 X 1.0 X 10-7
~ (vd)x == ny == _!!r_ [From Eq. (i)] 3
== 1.042 x l 0- m/ s en
(vd)y nx 2ny
Or Ans. = Sxl0-4 m/s
2 (1) Or Ans . = 7.Sxl0-4m/s (2)
 solved Pap ers P1-t
84 erW ·se cBSE
1 y~'"'"'
'-~

cross-secuonal area of con duc tor

28. A "" uons charge.
\i) For con duc t or ,: ""eJeC
f free electrons present in le
. Number o
E o.4 .. r - nAl ngtl ) I
C conducto - Of
6 :. Total C h arge cont aine d in leng th / wh · h
1C
c¾
a. cont n·bute in curr ent,
2::- 02
~ q = (nAl) e
"in
in The time take n by fre~ elec tron to cros ... ( i )
(l)
a: s the {1,~l
length / of con duct or 1s
O 50 100 150 t= I / vd
Temperature T (K) - where, vd =drift spee d of elec tron . . . -(ii) {1t~l
.-. curr ent thro ugh the con duc tor
{ ii ) For sem icon duc tor
[from Eqs . (i)
I= q/ t and (ii)]
I= (nAl )e _ (nA /) e
t - (l l vd) === n e A vd
.
:. Cur rent density (J) = -I = ne A vd === nev
A A d

0 Temperature (T) (1)

J = nevd, i.e . J oc vd
Thus, current den sity of con duc tor is
Th<: rd ilt ion bet wee n resistivity and relax to drift spee d. pro p .
ation ortionaJ
.
. ty of a ch arge carn.e_r 1s
Ill
l illl<'. p= - 30. M obill . d
11e2t efined as the driftlll
In cond uctors, average relax ation
velooty of the cha rge ear ner per uni
time decreases t electric field.
with increase in temperature, resulting It is generally den oted byµ .
in an
incr c,1\t' in resistivit y. µ = vd/E
In sem icon ductors, th e increase in num The SI unit of m obil ity is m 2 v- 1 s- 1 ... (i)
ber .
den sity (with increase in temp erature) (1)
is more Drift velocity in term of r elax atio n tim
than the decrease in relaxation time, the e,
net
resu ll is thcreforc a decrease in resistivity
. (1)
-e E
V d = -- 't
29. I.c t pote ntia l difference V is applied m
across a
cond uctor of length / and hence an elect
prod uced inside the conductor.
ric field E In mag nitu de, vd = -eE 't or -vd = -e 't
m E m
\I e 't
E=
1 ...(i ) µ =- (Fro m Eq . (i) ]
m (11
I
E 31. When a wire is stretche d, then ther
Free electron e is no change
in the mat ter of the wire, hen ce its volu
me remains
-e con stant.
-e -e
-e -e Her e, the pot en tial V = con st ant , l'
= 3/
( i) Drif t spee d of elec trons = V
I Conventional
current
Electric I ne p 1 . charge o~
current whe re n is num ber of electron s, e 15
, r aJldpi5
elec tron , l is the length of the conducto
I
+ I r-_- - - -__J the resi stiv ity of con duc tor.
l
Battery 1 a11tS
:. v oc - [ · : other fact ors ar e con st
eis
Let n == number density of free elec trons l . drif t velociti' g (11
So, when len gth is tnp lep. ,
on e-th ird.
 c~APTER 3 • C'~,1 rrnt EIPctric1ty
85

i-;c,i<1ancr pf the u,nductor 1~ ~wen a, mtiviry dccrca:,c'>

r rcma1 m con~t"mt ,m<l hcnLC re · (ll
'l R = p (/ Al
Herr. w,rr i, -trrtchrrl to triple 11, length , that
:,,can• the mas, of the wire remai n, , amr in
rt>th the cond111<,m
...\\,,,, bdorc \!retching= Ma ,s .:i ftr r q rr tchin g
(\'olum c x Drn,ity) befo re qretc hi ng
.,, (\'o lu mc >< Dc n ,Jly) af ter q rctc h ing
Arra of no" , cc t1on x Le n gth) before
, ,,r;chm g = (r\ 1ra o f cr c, ss-scct io n Y Len gt h ) Q L_.- - - -- -
after ,11ctchin g T-
(·: n e n , ity i, , ;,m e in hoth ca, n , ,p, 1s; ,V" ry of 'J sem 1rorc ,rtor dP"":'J'SP'\
1

·-10 d,y ·,,, ·- re-np.,r,:; , u•2 ( 1)

A, / = A111 => A J = A 2 /3 /)
[·: length is trirlcrl .i ftn \lrr tchmgl 34. Acu)r din g 1n colour 1.ode~. rt' ,1, ta ncc of two
w i r e~ arc
Ai= A1 /3
i.e. Wh en le ngth i, trip led area ul 11) ( rnk nf h rown = I, (n<lc nf g rL'C rl = 5
< rm , 'Clt1nn
j, reduced to A/3. Cndc r>f hit Jc - 1>
/' '\ I R1 15 / 1n' n ::: 2oo.;, ( 1)
Hence, I? = P , =r - '1 p 'J k'
A .'\ ' \ A (i 1) (. ndc ,, fnran~c= 3
Thu s, new rc siqan cc " ·il l be 'J t1 mn ul 11, ( ndc nf black = D
ori ginal va lu e. Code of g rct:n -= 'i
(11
R1 - 30 X 10; 0 =20".,
32• 1i) Given, rcs istJncc = ..J 7 kn ± I on,,
= 47 X I Ol i2 = I O~o RJ t10 o f rc , 1sta nce~.
p
=
: 5 ,<, 10'
=
R
5 => - 1 =)
-

P, 30 ,<, ;o ; R1 [1]
:. Isl colour band sh ould he ye ll ow., ~ corl<· f01
it is 4. 35. Refer lo 5ol. 28 on pnge 84 (3)
ll nd colour band sh ould be viole1 as code for ii
36. 1.1) Conductivi ty The rcopr Kdl of rc~ 1stwit y o f ,1
i~ 7.
co nd ucto r 1s knuv\n -1, c rn:l,,~t1\lt). 11 i,
Jllrd colour band sh ould be orange as corlc for
ex pr esse d a~
it is 3.
TVth co lour band should be silver because I
CJ = -
approximation is ± I 0% p [1/ 2 )

Violet Orange Th e SI un it or co nductt , It \ 1s m ho per metre

1
Yellow Silver (tr m~\ (1 121
(b) We kn o11· 1ha r, dnft vcl n<.: ity is give n by
t'E t
\.', = - .. ( i )
m
(1 )
wht' IT, f = elcc tri.: (harge ,
(i1) Two propmies of manganin are
E = ,1pplied ele(triL field. t = relaxa tion tim e
(a) low lcm perature coefficient of resi stance .
(h) high val ue of resistivity of ma teria l of and m = m ass of electron.
rn;inga nin make~ it ~uitablc for making a V
But £ =- (i.e . po tentia l grad1cn L)
qanrfa rd re~i~to r. (1) I
JJ.
To plot the QUlph between the two quantities. fi rst ... ( ii)
01
aL1dent,ty lhe relation between them
Siner rt,·1 1· . From the relat ion beLween current and drift
I .
. ' - ~ 1v1ty o materia l ol condu ctor (p) 15 velocity,
g1vc•n by, p = m/ n c 21
I= neAvJ .. .(iii)
Where _ (where, n = number o f dcm ity of electron s)
. ' n - number density of electrons
~n<I
W 1
= rel axa tion time. Putting lhe v-1lue of Ert . (ii) in Eq . (iii ), we get
Ith th(' ris 0 f
nurnb <I . e . temperature of semiconduct or, l = neA(nV ) or l = (neikt) V
er ens11y of free electrons increase), whereas ml ml

lb,
 W
ise CB SE S O IV L:u ,u ,
Jl 'I ' ) '
. P~rs IC~
g chapter

ocl l 't, i. e. th
e Ire si s ti vi ty of a 01atc . 1i
lo th e a Vcr., ir1,,1 s

.. . (iV)
. .
.
(b ) P rsel y pr op or ll on af
in ve f
e 't O re c el ec
rc la xa tI O n tn ~ e va lu e of 't d , ndn thn'
tr on s r
86 Cond uc
to r. A s th <'Pe n L
s te m pe ra tu re in cr eas so , 1,,r
v--(-f--A'I" )1 w, w re a
tc m pe ra . cs, t
de cr ea se s, h en
ce p m cr ea se s .
!If ... (V) fn
/ or
. oh m 's 1,, C on st an ta n an d M an ga n1.n a ,
... ) A llo ys li•ke • d d re si .· ors bc ca
st rells
ed
/ I Bui ,1ccord111g w (111
for m ak. in g st an
ar use th e
V == IR ) we gel
... (v i) . JtY o f l h es e a II oy s ha s le ss er
.5 (iv) ,,nd (v ' resistIY re .
th e te m pe ra tu
From BCJ · ( JI/ -I
) / de pe nd en ce on . IIJ
R== -///'r
'I" I . .. (v ii) uc to r is su bj ec te d to an electnc f
n a co nd . leld
I 38. E,Whe ec tr on ex p en en ce s a forc
e
ea ch el
Also, R= PA gel ee e le ct ro n ac
qu ir es an
") 11/C
F == _ e E , an d fr
a = Fl m = - e E
') and (vu , or lm
From ECJ5· (VJ uc t , ac ce le ra ti on ,
tronic ch ··-(iJ
ec tr on , e =elec
tiv ity of cond
Ill - resis . s o f el
w he re , m = m as arge
p= - z - . . . of conductor ,s ic fi el d .
11e r an d E == el ec tr
re~1~11v1ty ins Velo 0.
As reciprocal of s_ ta rt s ac ce kr a ti ng an d ga
v1t 11e2-r Free el ec tr on of the !Y
known as conduc11 (1)
s w it h a to m s an d m ol ec ul es
. conductivity, er p
== - = -n t I an d collide ff er en ce betw een
aver ag.e ti m. e kdi
.. ity, J == A co nd uc to r. T he • co11 1s · n s 1s no w n as relaxation
No w, we know
that , current dens tw o co ns ec ut iv e 10
an d
== eE-r) ti m e of el ec tr on
neAvd - = (ne2-r) E (· : vd m - = 't'i + • 2
+ .. · + 't II ... (ii)
nevd 't°
or J= - - - 111 n fl)
A 2
di fference
e av er ag e time
11
e -r) (1J ar e th
·: er = ---;;; w he re, -r 1 , -r 2 , .. . , '! 11
io ns .
d, .. ., n th co ll is
(
J = erE
be tw ee n 1st, 2n electronin
10 on page 82. (1)
v "' ar e ve lo ci ti es ga in ed by
city Refer to Sol. :. v1 , v 2, ... , ennaJ
37. (i) Drift velo ial ll is io n s w it h in i tial th
sistivity of the mater
nce or re 1st, 2n d, .. . , n th co
(ii) Specific resista ance of a , u 2 , .. . , u
w re spec ti ve ly.
fined as the resist velo ci tie s u
of a conductor is de
1
sectfon of
it area of cross- V1 = U 1 T
a '!1
unir length with un
lhe material of th
e conductor. V 2 =U2 +a
't ' 2
Q-m. Similarly,
ity is ohm-metre or
The unit of resistiv
at R = p(I/ A)
Since, we know tl1 .... (i) V 11 =U 11
+ a 't' 11
p = RA Ii ne d as
⇒
IR ⇒ El=neAvd R
vd m ay b e de fi
The dr if t sp ee d
From Ohm's law, V=
d and vd = eEt/ m ... . + V n
Vd = V1 + V
2+
⇒ R= Bl I neAv
ml n
So, R - El x m _ - + -~
u 11 ) + a (-r 1 +
'!2
1At U 2+ ... . +
2 ne
ne AE-r vd = (u, +
lue ofR - _ ml .E (') n
Substitutin g the va -2m q. 1 '
ne At
... . + u 11 ) + ~
At).A // vd = (u1 + U 2+ n .
we have, p = (ml/ne2 n al veJo-aQ
0'
[· :A ve ra ge th e.nn
aterial, P=m/ne2t in n collisions - '
:. Resistivity of the m vd = 0 + a -r
, .
From the above foynula, H is clear that ffrorn Eq, (i)]
resistivity of a -r
Vd = -
the E lm ) •rt speed of ~
uctor depends upon (e
following facto~~; · th e re qu ir ed ex pr es si on o f d n
Thi s Is
· he resistiv'ty
(a) poc~.' Le .t I of materia
l is fr ee el ec tr on s.
. n
IOverseJy proporti a1 to the numb co n n ec te d to
on T he co nd uc to r
density of free l ec trons (numb er f E is
electron s e e_ free DC so ur ce o f em
lume) As ~ r of sh ow n m th e fi gu re be lo w :
·
electron d~ r _unit vo s u· o e free
pend
of material ns1ty d_e l le n g th o f th e
ti tiVity ol a n the na
depends o~ resis of th conductor
e nature
tu re Suppose, in it ia
,
co nd uc to r, z.I = 'O ·
e material.
N ew le ng th ,
= 3lo
'1
CHAPTER 3 : current Electricity 87

we know that,
(ii) Area under / -1 curve on I-axis is charge flo wing
Drift velocity, vd oc E o [ electric field] through the conduct or
(vd)f _ (E 0)1 _E I ll _ l; _ ~
1
Thus - - - - - - - - - - - - = -
, (vd)i (E 0)i Ell;
Q= ~ X 5 X 5 + (10 + 5) X 5= 8 7.5 C
l1 3~ 3 2 (1)

Thus, (vd)/ = (vd) ;/3 41. Relaxa tion time The average time differen ce
Thus, drift velocity decreases three times. (1) between two successive collisions of drifting
electron s inside the conduct or under the
39, Jn first circuit,
influenc e of electric field applied across the
Reading of ideal voltmet er = 6V conduct or, is known as relaxati on time . (1)
Net potential difference = 9 + 6 = 1S V
Drift speed and relaxati on time,
Total resistance = l+ 1 =2 n
vd = - e E 't /m (1/2)
current in ammete r =V/R =15/2=7.SA (1J where, E = electric field due to applied potentia l
In second circuit, differen ce, ,: = relaxati on time,
Reading of ideal voltmet er = 6V
m = ma ss of electron and e = electron ic charge.
Net potential differen ce = 9 - 6 = 3V (1)
Electron current, I = - ne A vd (1/2)
Total resistance = 1+ 1 = 2 n
current in ammete r= VI R = 3/2 = I.SA (1)
eE-c)
I= - neA ( - ---;;;
40. When an electric field is applied across a (1/2)

conductor, then the charge carriers inside the I = ne 2 A't I m (VI I ) t: E = VI /]

conductor move with an average velocity which is V ml I
indepen dent of time. This velocity is known as - = - -2 = p - = R
I ne A,: A
drift velocity (vd).
(i) Relationship between current (I) and velocity
(1)
R- pI r..JV -- Rs and p -
- AL· m l
(vd) is, I =neAv d
- ne 2-c J
where, ne =amount of charge inside the This is the required express ion . (1/2)
conductor and A= area of cross-se ction of 4~. , (i) The current in the conduct or having length ~
conductor. cross-se ctional area A and number density n is
Total number of free electron s in a conduct or I= neAvd ... (i)
PQ of length/ , cross-se ctional area A having n Electric field inside the wire is given by
free electron s per unit volume is
E = Vil .. . ( i j)
N = n x volume of conduct or PQ If relaxati on time is 't, the drift speed
or N = nAl
vd = e-r.E/m (1)
p where, m = mass of electron
't = relaxati on charge
e = electron ic charge
and E = electric field.
Putting the value of Vd in Eq. (i), we get
2
⇒
I = ne 't A r:
.cu:; .••
( ... )
111
(1) m
Time t in which an electron moves from P to Q, I= ne 21AV!m l [From Eqs. (ii) l
all N free electrons pass through cross-se ction Q.
⇒ J =I/A= ne ,:VJml 2
(1)
t=l/vd
(ii} Given, I = 1.5A, n = 9 x 1028 m- 3 ,
where, vd is the drift velocity of electron s in the
conductor. So, electric current flowing through A= 1.0 X 10-7 m 2
conductor is given by
q Ne nAle
vd = l /neA
l=-= -=-- ⇒ I = neAvd 1.5
t t l / vd Vd = ----c-c-
28
---------
9 7
9 X 10 X 1.6 X l0- t X 1.0 Xl 0-
This gives the relation betwee n electric current
and drift velocity. vd = l.04x 10-3 m /s (1)
 0 chopterwise CBSE Solved Papers
88 · P~~s,cs
Net current drawn from the cell,
43. TO calculate the ~uNalent re~~~n~e 0~r~~ t!( V
no~•,o,ii< (netwo'K haV1ng P rt of I=------6 3
c~~ulatetne equrvalent resistance of smaller pa Jent
nernor'i< and finally calculate the equrva
R (total resistance) - === l .5A
4 2: :
resistance of the network. :. Potential difference between A and (1/(j
8
VAB = !RAB = 1. 5 x 1. 2 => VAB === 1.Boy
n n
(i) ·:4 and 4 are in parallel combination.
Curre nt through 2.Q resistance, (1/(J
:. Equivalent resistance,
I'= VAB / 2.Q = 1.8/ 2 = 0.9 A
RAB =~ + ~ ⇒ _1_ = ~ ⇒ RAB = 2 Q [IJ
4 4 RAB 4 45. (i) Let vd be the drift velocity.
Similarly, equivalent resistance of 12 n and -+E
I< /--~
6 n is
_I =_I + _1 ⇒ _1 =--
Rco 12 6 R8c
1+2
12
⇒ RBc =4 Q
(1)
~ +-+ O+- ~
Now, the circuit can be redrawn as shown in V
figure below

f:,G-+-b-7
Electric field produ ced insid e the wire is
2nl'-+ -_ _ 1n 411
E = VII ... (i)
Force on an electron, a = - E e (11
Acceleration of each elect ron= - Ee/m
[·: from Newton's law, a =FI m]
Now, 211, IQ and 4Q, IQ arc in series where, mis mass of electron.
combination .
:. Equivalent resistance of the network, Velocity created due to this accel eratio n= Ee 't.
Req= 2Q+J Q+4Q +JQ= 8Q m
(1) where, 't is the time span betwe en two
(ii) :. Current drawn from the battery,
consecutive collision. This ultim ately becomes
V 16
I =- =-= 2A the drift velocity in stead y state.
R 8
This current will flow from A to B and C to D. So, Ee e V
Vd = - ' t =- 't X - [from Eq. (i)l
So, the potential difference in between AB and m m I
CD can be calculated as
We know that current in the condu ctor
Now, VA8 =/RAB = 2x 2= 4 V
i = n e A vd (where, n is numb er of free
and Vco = I Rco = 2 x 4 = 8 V (1) electrons in a conductor per unit volume)
44. To calculate the current through a particular · e V . ne 2AtV
l=ne AX - 't-::: } 1 = - --
resistance, first we have to find the potential m I ml
difference across that resistance.
~ i = V/ R [·: R=m llne 2kr:J
In DC circuit, capacitor offers infinite resistance. i oc V.
Therefore, no current flows through capacitor and This is Ohm's law. (1½1
through 4 n resistance, so resistance will produce (ii) The setup is shown in the figure. Here, electric
no effect. current remains constant throughout the
:. Effective resistance between A and B length of the wire. Electric field also remains
2x 3 constant which is equal to V / 1.
RAB= --
2+ 3

=1.2 Q [ ·: _!_ = _!__ + _!__

R R1 R2
⇒R=
Total resistance of the circuit= I .2 + 2.8 = 4.Q
R1 R2 ]
R1 + R2
(1)
@ V
(·: these two are in series] Curren t densit y and hence drift speed change.
(2½)
 [TOPIC 21 Cell, Combination of Cells and
Kirchhoff's Lows
cell where, r = in tern al rcsh tr1ncc,
\ dn k c whid1 b ll ~l'd to m,1in tJin r1 str,1dy current I~= cxle rn al res istance,
111
.in rlt,·tnr rirrnit 1:, rn llcd cell nr electrolyt ic cell. E = emf of cell
Hlhl' tlV1' rl1Ytrndc~ pn~ itivc (P) and nc-gntive (N) and V = termina l voltage or cell.
, , h,)\l"ll in fip11c .ihnvr.
,I .
Also, V = E - fr .. . ( ii)
R and \I = (E / R + r) l?.
or V = E . . . (iii)
~ + r/ R)
I
The te rminal voltage incre<1 scs with the increase of
externa l res istance I(
~ Electroly1c
Charging of a Cell
During ch;irging of thr cell, V = E + fr
Terms Related to Cell I ..... ·•· ... ··· 1
I
i r.(rt" dre fol!ow111g terms rcl,itfd lo, I'll - •--t-\t NWYv-+-
'I ...
E. . . r.............!:

EMF of a Cell So, V < l:', wll rn current is drawn from the cell,
It 1~ the rnax11num pot en ti .i i di f k1 t' IH c lictwt'L'll t.l' . dhcl1<1rg ing. and V> n when charging of cell
two lt'rlll lllJb or lirrn it, w llrn Ci t ( lilt I\ llflL' l1 t,ikt-. place.
EMF of the cell , L = W / 1/

Internal Resistance (r) Combination of Cells

Internal rcsistc111(c of ,1 lL'l1 i:-- dd 111cd c1~ till' Ihen: are following lypcs of combination of cells
resistance offcrcd by the ,·kt l I ol ytt' of l he n:11 to
the Oow of current through it It i) de1101cd by , Series Combination
l1s SI uni t is ohm (.Q).
ln ~c11c-. u >mhmallrn1, u11 rent is given by
Terminal Potential Difference (V) I! _:_~ti:'/ (R nrI] ~I-

Thi? maximum pot ential difference between two

r ~-- ------ , r - --- - - - - - - ,
terrninals of circuit when the circuit is clo~ed, i~ : I: 1 r, : : E2 r2 :
known as terminal voltage or terminal potcnticil +I1~
I I I
1 I
I
I
l __________ _ Il I I
difference ( V) of cell. t __ __ _ ____ _ _ l

R
Relation between r, R, E and V
r = R(IJ /V-J) ... ( i) where,
 90 0 Chnpl e1wise CRSE Solved Papers • p
. Hvs,cs

;111d lllax i111U11t current is drawn t'ron-i the b

Parallel Combination .
when external remtance matches Will1 net a11e1y_
.
ln )'.ll.1lk l l'1)mhin.11\011, rnrrrnt is giw11 by · •
111tem r1 1 rcsista11cc, 1.c.

nr nE m

\
l I 111/.'
(/'1 I/II?)
-
/1
\\\\\\\
- l
I
:
/? = -
m
and / lll/lX = -

Kirchhoff's Laws
(
- -- - nE - lhE
2 nr Im) 2nr - --...
2r
• 11

' ,_ --- --- '

I
Kirchhoff has given two rules based
conservation of electric charge and of ener on
I - - - •• - - - - - • 1

I f' I ,' :
~ 1,· \\\\\\\--1
these arc known as Kirchhoff's laws. gy,
I I
I
I
~------- --. Tltereare twolaws

[i Kirchhoff's First Law [Jun ction RuleJ

- -\\\\ \\,v - - - - - '
The algebraic sum of electric currents at any
junction of electric circuit is equal to zero, i.e.
Mixed Grouping the sum of current entering into a junction is
lt consists of 111-rnws in paral\d combination such equal to the sum of current leaving the
1h.11 t'.1ch rnw contains 11-cell s oreach of emf E junction .
.md internal resistance r, then current in the
cirrni t is ~ivcn D}'

11111£
l= - - -
111R + 11r
/1

Ir,J = 0, l4 = Ii + 12 + 13 j

Junction law supports law of conservation of

charge because this is a point in a circuit which
E -- --- -- cannot act as a source or sink of charge( s).
NOTE The current flowing towards the junction of
j conductors is considered as positive and the Q
current flowing away from thejunction is taken as
R negative.
Kirchhoff's Second Law (Lo op Rule)
In any closed loop of electrical circuit, the
algebraic sum of_emfs o~ cell and the product of
currents and resistance 1s always equal to zero,
PREVIOUS YEARS'
i.e. EXAMINATION QUESTIONS
lr~V=O or I'.E =I'. JR I TOPIC 2
I(irchhoff's second law supports the law of
conservation of energy, because the net change 0 1 Mark Questions
in the energy of a charge, after completing a
closed path must be zero. 1. The plot of the variation of potential
difference across a combinat ion of three
NOTE Sign convention for Kirchhoffs second law.
identical cells in series versus current is
E shown below. What is the emf and internal
~~ ~~ resist ance of each cell?
V= +E V= -E
6V
I R I R
-+-----Nv 'N-- ----MN l/'-
I
V
V = - IR v =+ IR
An Application based on 1--. 1A Delhi 2014

Kirchhoff's Law 2. Two identical cells, each of emf E, having

Let us consider a circuit diagram negligible internal resistanc e, are
connecte d in parallel with each other across
an external resistanc e R. What is the
current through this resistanc e? All India 2013
D 3. A 10 V battery of negligibl e internal
I, + I2 R
R4 G3 h
r esistance is connecte d across a 200 V
E2 I2 batt ery and a resistanc e of 38 n as shown
in the figure . Find the value of the current
E h Rs F
in circuit.
Current distribution is shown in given
10 V

c:~
circuit using Kirchhoff's first law.
Now, apply loop rule for the mesh DCBAD,
E1 -(1 1 +I 2)R 3 -I 1(R 1 +R 2)=0
⇒ -l1(R1 +R 2 + R3) - I}? 3 + E1 =0 .. . (i) 3B Q 200 V Delhi 2013
Similarly, applying loop rule for the mesh
CDEFC, 4. The emf of a cell is always greater than its
t erminal voltage. Why? Give reason.
E2 - I 2R4 - (I I + I 2)R3- I 2R5 = 0 Delhi 2013
⇒ I1(R3)+l2(R3+ R4 + R5) = E2 5. A cell of emf E a nd internal r esistance r
⇒ li(R3)+1 2(R 3 +R +R )-E = 0 ... (ii) draws a current I . Write the relation
4 5 2
By Eqs. (i) and (ii), we can calculate I and I . between t erminal voltage V in terms of E, I
I 2
and r. Delhi 2013
 9

0 2 Marks Questions
7. A 10 V cell of neghgible mternnl
res1~tance 15 connl'ctcd m parallel aero n
bat er) of emf 200 \ and mternal of
res1~tancc 38 n as sho\\ n in the figure. 11. Ac II of em
Fmd the value of current m the circuit. connect d aero
2018 Plot a graph m v
10V terminal vol Vo h
current I. U m th pJ

CJ200V 38!l

8. A battery of emf 12 V and internal

the cell and 1t mtcrn I r
determined. All lnd,o 2014
12. Distinguish between emf(£) nd
1

voltage (V) of a cell haV1ng int r

resistance r. Draw a plot sho\1/1ng
resistance 2 n i~ connected to a 4 Q variation of terminal voltage (V
resistor as shown 1 the figure. the current (I) drawn from the c
V this plot, show how doc:.. one cnn
determine the internal resistance
cell? All India 2014 c
13. Use Kirchhoffs rules to determine th
value
. .
of the current 11 fl owmg
. mth
-----~--1A
c1rcu1t shown in the lig-urc.
4Q

(i) Show that a voltmeter when placed A

30U ,,
across the cell and across the D
/1
resistor, in turn, gives the same 2012 20V
reading. 8
C
(n) To record the voltage and the current /2
m the c1rcu1t, why is voltmeter E
placed m parallel and ammeter in 80V 20U
senes m the circuit? All India 2016 Dtlhl 2013C
CHAPTER 3 : Current Electricity 93

14, A bat,t,ery of emf E and intern al resist ance R5 = 2 n

r when conne cted acros s an exter nal
resistance of 12 n, produces a curre nt of
o.5 A. When connected across a resist ance
of 25 n, it produ ces a curre nt of 0.25 A.
Determine (i) the emf and (ii) the intern al
resistance of the cell.
All lndla 2013C + -
4V
15, A cell of emf E and intern al resist ance r is All India 2012C
connected to two exter nal resist ances Ri 19. In the given circuit, assum ing point A to be
and R2 and a perfec t amme ter. The at zero potential, use Kirchhoffs rules to
current in the circui t is meas ured in four determ ine the poten tial at point B.
different situat ions:
1A
(i) Witho ut any exter nal resist ance in
the circui t
(ii) With resist ance Rionly
(iii) With Ri. and R2 in series combination
(iv) With Ri and R 2 in paral lel
All India 2011
combination
20. Using Kirch hoffs rules in the given
The curre nts meas ured in the four cases circui t, deter mine
are 0.42 A, 1.05 A, 1.4 A and 4.2 A, but
not necessarily in that order. Ident ify the (i) the curre nt 12 in the arm EF.
currents corres pondi ng to the four cases (ii) the voltage drop acros s the unkno wn
mentioned above. Delhi 2012 resist or R and
16. A batter y of emf 10 V and intern al 0.5 A 3 V 2n
A - ~NV V,,..__ a
resistance 3 n is connected to a resist or.
If the curre nt in the circui t is 0.5 A, find
(i) the resist ance of the resist or. E
(ii) the termi nal voltage of the batter y.
Delhi 2012C
R
All India 2011
17. The network PQRS , show n in the circui t
21. A straig ht line plot E E=1.4 V
diagram, has the batter ies of 4 V and show ing the termi nal
5 V and negligible intern al resist ance. poten tial difference CV) of
A milliammeter of 20 n resist ance is a cell as a functi on of
connected betwe en P and R. Calcu late the curre nt (I) drawn from it
reading in the millia mmet er. is show n in the figure. I = 0.28 A
All India 2012C Using this plot, deter mine
200 n

~:7 . . . .
Curren t 1n circui
R
E
t, i = - -
4V R +r
18 (i) the emf and
· Calculate the curre nt drawn from the
(ii) intern al resist ance of the cell.
battery in the given netwo rk.
Delhi 2011C
l

94

22. Two l't' l\S of l'"'r ·.u,; nnd ,,; a 11d i11k rn :il 27. /\ 1·11 II ()r (ll llf' / 1,' 111\d lll(c11·11 11 1 l't • .
r cs,st:\IH'l'H ~,. :11\d r l'l'H\ll'l'l ivl' ly , nn• 1·0 111 1l 1rt.11d 1wrn n~ 11 v 111·i11hl, , lo Nl11 l11 1l 11
,''
romH!l'\.t•<l i11 parn llt•I. Oht.nin t.lw l)r11v,1 l. '111 p lof.H ul • I lt, 1 I , 1 r 111i 1II(vol 1 1·11111 I 11~
11 111
cxp ress ion H for t.lw t.'qu ivnh,nt. tllllf ' :11\d . ) l'(' . 11 11 //
/1{' /'S/IS (1 :4 1.'1 1.11 I ll ' ( ' /' I 11 11d (i i) ( ' I , , I.nil<· \I
llw int.e rnnl n ·sisla11 Ct' tll' t.lw II 14'111 I
I t. i:-i l'o 11 11 d I.I 111 L w Ii , · 11 N .I U I Ii
com h,nn t.ion . ~11 lndla 2010c • > • •
·
' ' II <!I11•1·0111
1:-t I /\ :I 11d w 1111 11 /, 1:-1 I ll (' l'\III M1•d
23. 'l'lll'CC l'l'I\Hor l~mr l.11 !l!!
1:111T Pt1l. l'IHIlll'l' :-t I.n () . (> ;\ . I1,111d .
thov ·1
' I.Ii,,
I~. '2 E n n d r-, /1;
I.h o 0 1111' / 1,' 1111d i11l.1•1·11 :1I 1·1 1 .'-li 1d.1111cu II 11(111 11f
h avin g inte rnal r.
All lttdlo 2010
r esis tn nccs r , 21·
nnd 3r , vari able n .-isi::.t.tm cc U nH Hhow 11 28. l h1i n g I( ire h I Io IT:-t I'll I PH, d o l.1·1·111 i n1•
i11 th,-
th e fi gm c. l<'ind tho ex\H'L'Rs ion for 1.\w v11 Iu o of' unll llow n rn1-1 i1tl.:1 11C:1• Nin tho
curr ent .. Plot n gmp h for vari ntio n of cin:uil., :-to t.11111. 110 c111T1·11I. l'low 1-1
t.l n·ou~h
curre nt wit h H. All lndla 2010c ,I U rn:,; i:,; l.1u11 :o . /\1 :.in , f'i 11d I. Ii <· pol.0
11 Linl
0 3 Marks Questions difftl l'll l\ C(' l>nl.w1•1•1 1 poi 1!1.1-1 /111 11d n.
I l.l

'l
24. Usin g Kirchho frs rule s, cnlc nlnt c I.he NW V'
cun ent through th e 40 n nnd 20 n
resi stor s in th e follo win g circuit Oclhl 2019 I !l ~
80V
. . \+- - 20 n
A . - - - --l -

40n
11/VI/VV

D i - - - --'V'V V\/'1/1/ \,-

v\, B
J 9V
II
6V

C Delhi 2012
29. Cnle u lnt;e
t ho va lne of' tho 1·c1-1 isl.n11ct• N i11
E ~ - -~ the cil'c uit s how n in Lht1 figu re , s o th at
~ I~ -- F Lite
40V cm ·1·cnt; in t h o ci rcui t. is 0.2 /\. Wh nl
10 n wou ld
b o th o poto ntia l dil'fo l'cm co bctw oc n
po in ts A

r~~~~5~l .-- r
25. Two cells of e mfs i:: a n d E and inte nnd H ?
1 2 rn a l
resi stan ces r1 a n d r r espe ctiv e ly nm
2
conn ecte d in pa r nlle l. Obt ain exp ress ions
for t h e equ iva le n t.. IO!l B_ ~ "
(i) r esis ta nce a nd
(ii) e mf of the com bina tion 201e c
26. Usin g Kirc hoff s rule s calc ul ate
th e
2V -:~ ~,t 51l

pote n tial diffe ren ce betw een Ban d D 30. ln lhc circ nil All lndlo 2012
in ~h own 1..,
the circ uit. d iagr a m as sh own in the . ' '-1 :::::
figu re. U.1. = Ft;, = l G U R :::: '30 ,, ,( U '
' ,(
C nlcu ln t e t h e oqui vi-ll' , ""
t :'\l\<l / '
e n I es1st == 1 0 V.
· · . ',
A ~

l
1_2_v_(_
2 _n_J ~ a c 1tcu 1l
_
nn<l t.h e .cui·t·e t1l
/{ ,

1 1 ~ TA/.
. •
111 e•\ch
~,u n coo l• th o
.
_j· _t·os1st.or.
2n .
1T
___,J, ·v~
1V ;, I ., I:,
IV
(1 : ""--_ _
t:: n., ~ l'
(I<!) I ,~J
3 V (3 !2) 11 1:3
201BC
!!.!!!hi -=e_
2011
 CHAPTER 3 : Current Electricity 95

31. State Kirchhoffs :ules . Use these rules to is connected across it, is 2.2 V. Whe n the
write the express10ns for the curre nts termi nals of the cell are also connected to a
/ , I and 1 in the circu it diagr am show resist ance of 5 Q as shown in the circuit,
1 2 3 n
in figure below . the voltmeter readi ng drops to 1.8 V. Find
1 E1 = 2 V r1 = 4 .Q the inter nal resis tance of the cell.
1
All India 2010

h E2 = 1V r2 = 3n

h E3 = 4V r3 =2n

All India 2010

R = 5U K
32, State Kirchhoffs rules . Apply Kirch hoffs
rules to the loops ACB PA and ACB QA to 35. (i) State Kirch hoff s rules .
write the expressions for the curre nts (ii) A batte ry of 10 V and negligible
Ii, 12 and 13 in the netw ork. inter nal resis tance is conn ected
across the diago nally oppo site corne rs
E1 = 6V
p of a cubical netw ork cons isting of 12
resis tors each of 1 Q resis tance . Use
I1 0.5 .Q I1 Kirch hoff s rules to deter mine
~-A--< .,_B_ _ (a) the equiv alent resis tance of the
netw ork and
(b) the total curre nt in the netw ork.
h 1n I2
All India 2010
I3 Q
E2 = 10 V 36. Two cells of emf E1 , E 2 and inter nal
resistances r1 and r 2 respectively are
C
connected in paral lel as show n in the figure.
R = 12 .Q
All India 2010
33. State Kirchhoff s rules . Apply these rules
to the loops PRSP and PRQ P to write the
~xpressions for the curre nts 1 , 1 and 1
1 2 3
m given circuit. All India 2010
200 .Q I2
s R
11
sv Deduce the expre ssion s for
J3 60 .Q
I2 (i) the equiv alent emf of the
(milliammeter)
p comb inatio n.
Q
I1 (ii) the equiv alent resis tance of the
4V
34 W · comb inatio n and
· r~te any two factors on which inter nal (iii) the poten tial diffe rence betw een the
resistance of a cell depends. The readi ng point s A and B. Foreign 2010
on a h.igh resist
ance voltm eter when a cell
'
 •

0 5 Marks Question
38. (1) ~tatc ti
Expla1 bri
J uo::t1fic d
(ii) Th1.: curr n 1 d \\ n
emf l:' and n r1 1 r I t c r
connec-ted · he nc l\\ 01 k cif r 1 ,
4
1_•ach of rE "l "lane r ,\ sho\\ n in lh
figure. Ohta1n the e}..1)1 es-,I011 for
(a) the cur,·ent dra\\S h"Om lhc.! r·cll nnd
(h) the powc r consu11)(•rl in liw
network. 5".

6.

Delhi 201]

0 Explanations
1. Anording to quc ,tic,n, maxirllum POH·11t1,d ()f tl11 L'L
c:clls (cdl\ in \c•ric.-~1 cac h c,f l'rnf /, "g1ver1 1n (Ur
graph (1 e 6 Vi
~111 w
C-.o, 3!, r, V
7. C,1v1.: 11. r I UV,
4 t f,/ !, 2V
Cl
Internal re\J<,tance of thn c << IJs t·ach of 1c<;1q.:1nn
r can be calcuJatcd a
11 / )( lr
Iall arc 111 \enc )
3r V 6
/ I
r m
(1)
OJ
CHAPTER 3 : Current Electricity
97

NcnY. usin)! Kirchhoff's loop law in given figure, in

7
lc>l'P r\BCl>A. l=-A ... (i)
200 - 38/ - IO = O 5
Applying Kirchhoff's second law in mesh AFDCA,
190 = 38/
3/ + RI - 4 - 6 + 21 - I = 0
l = 190 = 5 /\
38 5/+R l=II ... (ii)
(1)
s. ,\Cronlin)! to question, Now, substitute the value of I from Eq. (i) to
Eq. (ii), we get
sx2+ Rx2= 11 ⇒ 7+~=11
5 5 5
7R 20
⇒ - =4 ⇒ R=-.Q
12V, 2 Q 5 7 (1)
Por potential difference across A and D,
along APD,
7
VA - - X 2+ I - 3X-7 = V0 ⇒ V1, - -14 + I - -21 = V
5 5 . 5 5 0

14 21
⇒ VA - V0 = - + - - l ⇒ (VA - V0 ) = 7 - 1 = 6 V
R=2+ 4=6.Q 5 5 (1)

(i) Net current in the circuit = 12 = 2A

6 10. Two cells of emfs E1 and E and internal resistances
Voltage across the batte1y, 2
'1 and r2 connected in parallel combination, then
Vb = 12 - 2 X 2 = 8 V equivalent emf,
Voltage across the resistance,
V, =IR= 2 x 4 = 8V (1)
Ecq = E1r2 + E2fi / '1 + '2
(ii) In order to measure the device's voltage by a Equivalent resistance, req = '1 r2I ('1 + r )
2
voltmeter, it must be connected in parallel to
Ac~ording to question,
that device. This is necessary because device in
parallel experiences the same potential
difference. An ammeter is connected in series
with the circuit because the purpose of the
ammeter is to measure the current through the
circuit. Since, the arnmeter is a low impedance
device, connecting in parallel with the circuit
would cause a short-circuit, damaging the 2.0V
ammeter of the circuit. (1) Equivalent emf = E 1 r2 + E r J (lj + r )
2 1 2
. (1.5x0
9. Consider the given figure, 1.e. = -'----.3)+(2 x0.2) 0.45+0.4 0.85
-'--'-- ---'- = - - - = 1. 7 V
0.2 +0.3 0.5 0.5 (1)
Equivalent internal resistance
= _!i!i_ = 0.2 X 0.3 = 0.06 = ~ =
012 .Q
1V r1 + r2 0.2 + 0.3 0.5 50
111
R1
R 11. We know that, V = E - Ir
The plot between V and I is a
I
I T3V straight line of positive Vt
intercept an.d negative slope as
A
6V
B I I
4V
C
shown in figure below.
(i) The value of potential
Applying Kirchhoff's second law in mesh AFEBA, 0 I
difference corresponding
21-1 +3/- 6=0 to zero current gives emf of the cell. (1)
(since, no current flows in the arm BE of the (ii) Maximum current is drawn when terminal
circuit) voltage is zero, so V = E - Ir
51 = 7 ⇒ 0 = E - I max r ⇒ r = E / Im.,,
(1)
 I I
, I I
// ',
0
JI)

ff). 1hr ,,
11, I fl ,h,, Kr 11/J j,,/11,//
ii 1,~,111rl lt:11111 I
IWI'! II 111 I I I VI
I
12, l) lfl1•rr1ut1 ,r ,,,.,m • 1,11I volf .,y,r
II I
emf ,11, p'rll ,,,,,,, , I IJ (

111~ 1hr po11·111l,il

rr 1w1wrr II 1w1,
,1111 1 fl 111 ' ,,, 1//
II J\
, ,
f11' /I I ffl JI
I ' ,, 1111,
,,, I I ' I tj//
I
,ill I,,,r-11 1, ,,11~ wlw11 ,, ,,,,111, 1I,, // • I I ,, I I, I
ll'lllllll1Jill1I 11 ,,,I,,,,. ..' 11ir1,11v.h ii, ,11 ·• { ,) Iii I I' ·
1111 r 11111·111 i~ 11,,wl11Y, tlr,•,,·tl rlJIIIII
1l111111v.h Ii ,,•II h lri iii'
1,1w11 r 1,r 1111 11)
II I•, 11,, rflr, 1
II I\ 1111' 111111•1· IV,
'', I , f I J IJ ,A
ill /11//11t1 of,,,, n11n11/ v11/1111r
iio//oWlll/1 111111/!, ,1/1ow/1111 v
Vl'l'JI/S //It' t Ill 11'/'lf
fio) 11,fi, /' . I ,J /'1 I
1, J:/r l
1
,, I
I I JI
Ir, ,111' '., ', 'f
ltl•II "' Jfll, II I I
/1 1 11"' f ' ,, 1)1./.
I:
I ii} I ,
., r + /' /') /' t /';
( J <;1 11111111 I r,, llw. , ,1.,, 111, , 11,, it re , .La,,, 1·, 11 11''
r1J lh,,11 It) f,11t J, ,.,, 1Lar1 fl f a1 d fi,1} ·,,,, l4 41
Note N1•K,1llvr, •,lop1• fllVI", 1!111•111,1111·•,l•,l,1111 r•,
(1/21
13. 1,1 dosrd 1111111 /111/!f'L'/l/1,
).0/ J HJ/1
I',()

IW
I J.()/ 1 :f)f, ()

... liJ
16, 1,u,·11, Ii J 1, I, r ~,l, I f1 , A

111 d11s,·d 1111111111!11<:11, 'Jr,1:il /1 '',J',\;Jfl' I ,,1 1 II' ult,

KO I ).(}/ I J.(J I J.011 () I: I()
I1 I r
).(l/; I J.0/, 10/J ... (ii) (1J I (J I

011 "1lvl11g l!q\, (I) ,111d (II), wr y,rl (IJ l 11l1·1n:i! 11••,i•,t;J11" , / 1 1 <1 , ;r, ~ J 7 (t (1)
/
1
;. IHA Iii/ 'I ·111Ji11;,J ,,,J 1ri1,1 , /
1 J/1 <, ·, / , 7 ~-~I (1)
', (1)
17, 'J 111 gr11·11 d1;,;!r;J1n 1·, ·J 1r,1m f1 1•Jr,11
14. ,;iVl'II, 11, IJ.U, /(I J.'1Ll
',,(l, !t

!101
1,
1111'
O.",i\ , 1,
I SI 1·;1s1·
0,).',i\
',! lilll /I'
r II /1 I! I/, >I II (,
... (i)
'I
l /,: ;,,,;.) ;;✓ ,,- /

- -:
';,V~ I;~
1
,, 0.'1 (),', I f/1 (t

Now, 1'01 !ht· J.11d 1·,1\r C';, ;::

Ii J.'i; r I( <,. ).'i .. (ii) I' r)
O.J.'1 1 '1 1/
C:omp,111· Iii<' liq:;, (I) ,111d (II), w,· IWI i\pplyi11i: Kin hlJri/f', . c·cr1111J J
f:' (, II r,. ). 11 ' ' aw Ir, thr: 1<1<1[1 /1J<SP,
11 11
O.'i O.J.'i / }.() / 2()() t 5 ()
o.m: 1:; 0, 'iii' l,J).'i 11,H loop /'N()I', . . Ii I
0. }.1li J.625 (1)
, I ,62'i . }.()! 1 (,/)11 l 4 /)
II > I( 6. 11V
0.25 SJ, i l 5/ I
(1)
Applying I<lrdilJo/'f\ /irst la:, - ... (ii I
1'111111111 iht• v11l11<' of/:' ln l!c,. (l), w,• /lt'I
/I f1 t f l
,. <,, 5 r, o.5 > ,. JU
Jlrorn ll<j\ , ( i) and (ill J W" h ... (iii)
0. 5 0, 5 (1)
' " ave
? 411 I 44/ l I
cHAPTER 3 : Current Electricity 99

on solving, we get 20. ( i) Applying Kirchhoff' s second rule i11 Lh c cl m cd

I = ~ A = l 1000 mA meshABFRA,
3
172 172 Vn - 0 .5 x 2 + 3 = VA ⇒
VA =· - 2
V11 -
_ 4000 A I _ 39000
I 2---ffi, I ---mA v = vA - v,1 = 2v 1-
215 860 Potential drop across R is I V as N, h'F and
:. The reading in the milliammeter will be upper row arc in parallel.
:. Polcnlial across A/3 = potential across l?F
~mA 3-2X0.5 = 4 - 2/ 2
172 (1)
21 2 = 2 A ⇒ I 2 = I A (1)
as given below
18• The given circuit can be redrawn (ii) Potential ac ross R = potential across AJJ
= potential across l]F
= 3-2 X 0.5 = 2V (1)

21. From the following circuit and graph

+
4V
-

2
L--::j R
(i) The value of po te ntial difference correspondin g
R1 - R4
-- -⇒ - -- to zero current gives the emf of cell. Thi s value
Here,
R5 R3 2 4 is 1.4 V. (1)
Wheatstone bridge is balanced. So, there will no (ii) Maximum current is drawn
current in the diagonal resistance R2 or it can be from the cell when the
withdrawn from the circuit. The equivalent terminal po tential difference
resistance would be equivalent to a parallel is zero. The current j
combination of two rows which consists .of series corresponding to zero value V
combination of R1 and R5 and R4 and R3, of terminal potential
respectively. difference is 0.28 A . This is -R
1 1 1 1 1 maximum value of curre nt.
-= - - + - - = -+-
R 1+2 2+4 3 6 r= ~ =_!_:±_Q; r=5Q .
18 I 0.28 (1)
R=-=2Q
9 (1½) 22. Given, emf of first cell= 2E, emf of second cell= E
V 4 Internal resistance of first cell = 2r
I= - =- = 2A or I= 2A
R 2 (1/2) Internal resistance of second cell= r
19. By Kirchhoff' s first law at D, Ne t current, I= I 1 + I 2 . .. ( i) (1/2)
Ivc +1=2 E1 = 2E
Ive =IA
1A D 2A 2V
~ 1---- 8 I I
1A B A
R 2Q
--IWN---
r1 = r
A
(1)
Ill
Eeq
I I
Along ACDBA, VA+ 1 V +Ix 2- 2= V:
But B
0
A ' II B
0

VA = 0, VB = 1 + 2 - 2 = l V --NvW-
feq
½=IV W
 2
26
( I)

( 1/2)
23.
to look out
I s. 1f the opposllc
e onnccted, then they
md1VJdual emfs arc
nal of the cells arc o'G.-----t~c
emf 1s ob111incd by 3 (1)

Similarly, applying Kirchh

'U· +- 5[:I 4E1 BDCB.
r 2 r + 3r + R f.,r • R
V ~.i1 - i2) + 3- 312 - = JI
(lr<m, C)hrn'\ lawJ Solving Eqs. (1) and (1i) c ge

I ti I '1 - 5A 2 = 6 A
13 3
11) ,ind _IA
l3 (1)

\
n (1)
:n.
11 I
24. l ·,~J VI ' ., , ) 'IYIIJ II),,,.,,,,
; I
I /J

I
I ,I 41 Li
{J t
( V
.I
I (1 0)
V u
Ill Wlu 11 N 4 U 1111,I I - I A
CHAPTER 3 : Current Electricity 101

we know that, terminal voltage, V = E - Ir. Across BA, equivalent resistance R2,
V = IR = 4 = E - Ir J J J J
- =- + - + -·
E - r =4 .. ,(i) (1) /?2 JO 30 15
3+ I+ 2 6 J
= - -- - - - -·
30 30 5 (1/2)
2
0 ⇒ R7.= 5.0
>
C Potential difference between points A and B,
~ Vn11 =1 x 1<2 = 0.2 x 5 (lJ
0 J(A) v,111 =1v ⇒ v11,1 = - 1v (1)

Graph between terminal 30.

voltage (V) and current (J) I1 R1 = 4 n A (h + / 4)
,---;---f.JIIW'---<~ - - - - ~ o
When R = 9 .Q and I = 0.5 A , then
V =IR= 0.5 x 9 = E - 0.5 r
=> E-0 . 5r=4. 5 "' (ii)
On solving Eqs. (i) and (ii), we get
r = 1 Q and E = 5 V (1) R4 = 30 Q

28. Applying Kirchhoff's second law in mesh AFEBA,

B
-lxl-lxl-6+9=0 According to figure, 15 n, 30 n and J 5 n arc in
-2T+3=0 parallel, their equivaJent resistance (R,,r) is
3 I 1 J J 2 + 1 +2 5
1 =-A "' (i) - = -+ - + - = - - - = ·-
2 (1/2) Req 15 30 15 30 30
I 1 .Q E 1
F .------vv'VV',"-r-- - - - , 0
Req 6
I
4 .Q Req = 6 .Q
1 .Q
Now, Req = 6 .Q and 4.Q are in series their

I '----<
{) rh V 1)
1-------' R
equivalent resistance R~ is
R;q =Req+4f2= 6f2+4.Q=JO.Q

~3V
By junction rule at node A,
A C 11 = 12 +13 +14 ... (i ) (1/2J
9V (1/2)
Applying Kirchhoff's second rule
Applying Kirchhoff's second law in mesh AFDCA, (a) In meshADB,
-lxl-lxI - I x R - 3+9=0 -14 X 30+ 1512 = 0
- 2I - IR+6=0 12 = 214
2! +IR= 6 ... (ii) (1/2) ⇒ 14 = 12
From Eqs. (i) and (ii), we get 2 (1/2)
(b) In mesh BDC,
(2 x 1)+~R=6 3014 - 15!3 = 0
⇒
I⇒
14 = ..1.
! 3 = 214
~ R=2.Q (1/2)
2
For potential difference across A and D along AFD, (c) In mesh ABE (containing battery), (1/2)
3 3
VA - - XI - - X l = VD -411 -1512 + 10= 0
2 2
411 + 1512 = IO ... (ii)
VA - VD= 3 V (1)
29· For BCD, equivalent ( d) In mesh ABCD, (112}
resistance
- 1512+ 1513 = 0 ⇒ 12= 13
R1 = 5 .Q + 5 Q =10 .Q
⇒
(1/2)
11 =12+ 12 + 12 11 ::i.12
2 2

)
I
/
 (~ I I If
102

I rr1irt I 'I (111, we V• I

1ll 11 I I
,I ( ; / , ) I I ',/ 1

Ill A I. I A
It ,r , A I
I I

• I

I. IA
/ 1
I. '•
I
,I ' I
/
/
IA
II I
). ! (lj

31. KlrclihoH''i 111·•,I 1111,· 01

j1111,·llo11 rul<· J'lw
algc-lJ1,11C •,11111 11f l')r·c 11 i,
< llr11•11(•, .cl ,111y j11111 l1C1111,J /(
1·l1·c11 l1 < i1n1i1 1-. 1·q11,cl 11, I.
/.l'f(), i,(• (Ill' ',11111 Of ( 11111'111 I 1111 JIIIJ: 111!11 d A1,ply1111• I ft ,,,.,ir, '" I I ,f II
jllll('IIOII h 1·q11,cl 1,, 111, ',11111 ,.i I Ill 1(' 111 11•,1 1,11111: 1111 I I I
Jilli< lio11 ',/ (1
"
I 111
'J
(,(I

I 11 1,,, •JI Af,/J(JA, I I

I "'
/ 1 1/ , / 1/, (J
/\lj1111tlio11{J, f lJ
1 1
I I I II
J<lrchhofl's <;<•<•011d 1111<- 01 111 ;c11y loop 11111- ' J
Al.,, l 11 < ltlwf/'
do\1·d JJl(••,li of,.,,., 111<,d ( IJ( llil, 1111 ,ilw 111 ,111 ',11111
of c111f, of n·ll i, ,all(J 1111· JJH1d111 I of, 11111 111 •, 111111 ,, (111,
H·\ist,111c c·\ i~ o1lway•. 1·cp1,d 1,, 11·11,,
i.e. }. // I ),//( ()
111,11, 1111(( ( fjll,111<111 II,, I ,,.,
/f , / • ,11,d!,J
f<irchfw/1'\ •,1·1111,cl J;1w 1•, ;1 1111111 o/ f;1w of ()JI
.1,l v 111}: I 'I· (I), (I )
" I( ), f'C I
con~1·1 vat ic,11 o/ 1·1 wq:y.
(1J f.'1 A I (If, A l '
Poi giV('ll c in ui1, / I ~ I I I\
H I :/ 11 '/,J
t, ? V 33. I cu •.l.t11•1111•111 o/ Klrthhofl'
A
,, - 11 f-J ',,,l ~l1,11p,1w•l(1,l
rule, Id•, 1,,
Ill
!\pply1111: 1<1, t11i11,lf' , cc,11cl 1111 to t/1, /,,,,,, /'/'I',
I;, I ;, IV l,/ l.J/i ()
I ~-- 1, vWW (, /. .l(HJ f 11
('.) •I/ 1 tlll/ (II

,~J / 'I '1 V , ., ? !}.

"'" ''"''' /'/'f//',
~()/.
r,
r - •- 1, NVW
I ,1)/ I I

,/ ' I I , /' /1I/

Al fl, applying j1111c·tio1111111·, /\pply 111 1: 1<11111111,II ' . 111 • 1, ,11,
/ J /I I / / ... (j) I I II I ( I)
Jn 1r1csl1 /l!JCJl/1, I ' II ' / ,
l l llllll l.q•, (I) ,111,I (JJIJ , WI 11 1 1/1
2 1111 I 3/1 I I ()
'111 '}/) '"1 ' ,i,t I I /,VJ

In mc:sh JICDU/1,
... (ii) F 111111 1-11·, /11J ,111d /1111, w, 11., v,·
,l/)/1 I ' ,J , (V)
- J JI), 21 1 1 ,t O
<Jo •,,,lvJng 11,,. ,d11,v<· ,-,,i,,1f11111•., w, Y,11
311.1211 j
' (iii) 1, 11 A 111)()(1
On ~oJving, 1 1 , /1. amf I 1 . we· JWI 111A,
1/1. 1/1.
11
2
A, 11 7 A ,, " I\ /j()/HJ 111A
13 13 ' ', ),
l'J
I.'',
- !J A •llltf / l'JIJIJ() 111A
and I j 1 A
(IJ
JJ Hf,IJ Hf,(/
(1J
CHAPTER 3 : Current Electricity 103

34
• Tile high rcsis1.a11cc voltmcl.cr means Lhill no ⇒ 5/ = 10
current will flow through ii hence, there is no I = 2A
potential difference across it. So, the reading Totnl current in the network = 61
shown by the high resistance vollmcter can be = 6X2=12A
taken as the emf of the cell. From Eq. (i), WC get
The internal resistance of a cell depends on 6IR=IO ⇒ 6x2x R=lO
(i) the concentration of electrolyte and 10 5 5
R = - · = - Q ⇒ R =- Q
(ii) distance between the two electrodes. 12 6 6
( 1/ 2 X 2 = 1) (b) The current through 20 resistor is 0.9 A. (1)
The emf of cell (E) = 2.2 V 36. Let / 1 and / 2 be the currents in two cells
The terminal voltage ncross cell when 5 n with emfs, £ 1 and E2 and internal resistances,
resistance (/?) connected across ii (V) = 1.8 V
lj ;ind 1'7.,
Let internal resistance = r
•: Internal resistance, r = u( f -l) (1)

22 04 10
:. r=s( · -1)=sx · =2= n
1.8 1.8 l.8 9 A-----<
I
10
⇒ r= - 0
9 (1)

35. (i) For kirchhoffs rules Refer to Sol. 31

on page 102. (1)
(ii) (a) Let 6/ current be drawn from the cell. So,
Since, the paths AA', AD and AB are Now, let V be the potential difference
symmetrical, current through them is between the points, A and B. Since, the
same. first cell is connected between the points
As per Kirchhoff's junction rule, the A and B.
current distribution is shown in the figure.
V = potential difference across first cell
(1)
E1 - V
V = E1 - I 1 r1 or I 1 = - --
2/ 61 r1 (1)
D'
Now, the second cell is also connected between
.
t h e pomts, A an d B. So, I 2 = -
E2 - V
--
I ,.2
Thus, substituting for I 1 and I 2,
I _E 1 - V E 2 - V
I -- - +- - -
I ,.I
D
2[
C
or 1
I= ( ~ + ~2 ) - V (~ +
2
:J
6I A B
V = ( E1 ;; : ~ 2
1
i )- I ( /+\) . . ( i)

If E_ is effective emf and r, the effective internal

Let the equivalent resistance across the resistance of the parallel combination of the two
combination be R . cells, then
E = VA - V8 = (61) R V = E - Ir .. . (ii) (1)
==> 61R=l0 [given E=lOV] ... (i) Comparing Eqs. (i) and (ii), we get
Applying Kirchhoff's second rule in loop
AA'B'C'A, (i) E = E1 r2 + E 2 r1
r1 + r2
- 2l X l - I X 1 - 2J Xl + l O = 0
This is equivalent emf of the combination.
 0 Chapter 11ise CESE So l /f.C ::,=c~ ,.=
104

38. fi) For kirchho ff's rules Refe r tr,

(ii) r -
SrJi
3 _, _
page I 02 . ···
r1 ➔ r,
I ii) (a) The circuit d iagr-am can be rcdra·· ,
'I hi , i, c:q1 1ivnl<:nt r(:,i\tar1 cc of the u'T; a·
given below. ·
C1,n1bi11at i()11. . r
(ii iJ ·1h e polc-n tial diflcrcnc.c: hc:twccn the rriint~ 11 r N01v~ -r- - -
il lld fl h

V == f: - fr

3 7. No , ,11 r<·n1 fl ow, thmllgh '1 n rc.: shtor a ~ capa citor

(1)
A ~~ E
r V0M,- - r_ __
11ff1·r, i11 fini1 e rc- , i, 1,1ncc in DC circuits.
r
/\h11, 2'2 a11d 30 arc in parallel combin ation
2Y 3 E.r
I< /II'
.
- -
2+ 3
=-r,5 =1 . 2 A <Equivale nt circuit,

/\ Jipl yin g Kirchho ff' , , ccc,nd ru le in outer loop AB r r

,111d <ell. R ,:<r, = -2 ; Rre
,, = -2
I.e t / c11rrcllt fl ow through outer lc,op in cfockwi ~c J J 1 J 3
dircc 11,m. ⇒ - - = -+- +-=-
R AB r r r r
1.2/ 2 .Xf 1 (, =<J = 41 = r, ⇒ I =-3 A
2 (1½)
R,,,
,e = -r3
1'011.:n tial diffcn.:n<'c across AB, .
., To ta I resistanc e o f crrcu
. .
Jt, r = r -'- -r = -4 r
V,w - ll<Ah =:_ X I .2 = I .XV 3 3
2 Curren t drawn from cell,
.-. 3.U allcl 20 ;-in· in parallel combina tion . E 3£
l= - - = -
.-. l ' o l l"nti:ll cllff <·rcnc.:c ac.ross 2n resistor i s J .8 V. 4 r/3 4r
.-. C11rr,·111 / ' through 2n rcsi~t<,r i ~ glvcn by

( 3£) r = -9E-
2 2
(b) Power consum ed = I 2 r = - • r
!' V = J.X = 0 .9/\ 4 r 16 r 2
R 2
9£2
/ ' - 0 .9A (1½)
16 r (3 )

[TOPIC 3] Electrical Devices and Hea ting

Effects of Current
Pote ntiom eter
uniform c urrent carrying conduc tor is directly
It i.\· an electrica l device which can ~>roporti onal to th e length b e tween the two points,
(i) rn ca-.urc· til e: pcite nt ia l cfif! c rc:n c.:c: w it h J. C . V oc /

grc:a t c:r ac c u rncy.

( ii ) rn ca, urc: th e: c:m l o f a c.:c:11. Poten tial Gradi ent
(ii i ) c ompare: the: c:m ls of two cell s . IL is th e p o tc:ntial drop per unit le n gth of wire
( iv) b e: w, c:d to d c tc rniinc: t h e i n terna l re s is tan ce o f poten tiometer , i.e .
CJI a pr imary cc:11.
IK=V! l l
Work ing Princi ple
where V and I a rc p o t entia l differen ce applied b y
·1 he po lc.:n t iorn c tc r work s on t h e: principl e th a t drivin g cell and le ngth of wire of potentio rnete L
putcnli a l diffe r e n ce aero,;~ any two points of respecti vely.
 r,~AprER 3 : 1' t 11r t 1 11t I lt 't t1i 1itv 105

APpllcotlon of Potentl~meter (iii) To Measur e Interna l Resistance

'" ' , , " ,•11 1••,1 ,11•t!1,·,1t1 ,'ns ,'I J',1/r11fi,,111r'lr'I' of a Cell y

. -~\~~s~1ren,~ nt of Pote~tial Tht.· i111rrnal l'\.' sisl,mn: l.',\11 hl' ddt.:r111in cd

1 using pnll'I\I io111t:ll'l'.
l' Differe nce Using Potent iomete rs

11!1 \:\'l L!l.J- <·) - V K

~
/\
100
- \1\ 1\1- ( • ~
hl,iilihl...Wilihl,WJhliliu.u.LJ.ili.l,.J.ilililililil.JiliWJ R,, •- Main
J' J J"
{l} L ~ circuit

t:'r~,C t /\ I
A.-- - - ---.- -.--.- ----~ B

F
1- --1\..,___ ___. G \...--__.. ,
J°·· i~ ihc n':-i:-1,Hh't' l,f pt,tt'ttth )tnt'll'r \\'ll'l' nf kn~t~1 /.,
. . - r I..:
h , l'\ll'l't'HI
!.,t 11
tht\ Ht~ l1 Pt'tl'nttn nwtcr wire 1~ . = -- . RB
I? + ,.

'• \llfi\l\,1 \
.
-,,
tll\'P ,h'I\):-~ p1.Ht'lllll'ntt'lt'I' \\'\l't' = lr =

.-,1,-111i.1l '~r.Hlit'ttt l,f pl)tt'l\li omctcr \\'il't' ,

l ,. J
_·_
R+r
I'
l r /1 , 12 arc I he balancin g lengths when key
I< 1 is opened and closed respectively and
resistance R is applied in Resistance Box
(\. = \F R + r) r ' l. (RB), then internal resistan ce of primary cell
of emfs is given by

:n,' Ill)tc'ntiom t'k'r b a bt't lt'r lll'\'l(t' to l1lt''1Sltrt'

M ,,;1ti,1l difk rt'lll'c:' than a voltnlt't t'r as null point
;:wt.hQd i:- ust'd and hc' n Ct' it 1.: a.n lllt'asure even the t'mf
,,f cc'll but \\)ltmeter cannot. Ir measure s potential
The potentio meter works only when
Jifferc'ncc' "·ith ~reatt'r accuracy .
(i ) the termina l voltage applied by driving
!ii) Comparing EMF of Two Cells cell is greater than the emf of primary
The emfs of t'IYO primary cells can be compar ed using cell.
~ 11en1iomctcr as E 1E = 1 ,' l (ii) the positive termina ls of driving cell
1 2 1 2
where, 11 and /2 are the balancing lengths corresp onding and primary cell are connec ted at the
'.o cells of emfs £ 1 and E ,, respectively. zero end of potenti ometer wire.
Cirruit diagram Sensitivity of a Potentiometer
f ur comparing the emfs of two primary cells. It refers to the capabili ty of measur ing
very small potenti al differen ce and

c ~~r--(• V K

Rh
1 - --'-'--- ----+l
Main
_sircuit exhibit change in balanci ng length even
on very small change in potenti al differen ce.
The sensitiv ity of potenti ometer can be
A J' J
I B increas ed by increas ing the length of
I wire of potenti ometer and hence decreas ing

tf~::
the value of potenti al
gradien t
SRB
(Safety resistance box)
 106 0 l l

II 1, t-, 1~c•d n n 1'1 < prtr JI 11111

Wheatstone Bridge \\ 11<',l l'i ltlfl<' IH 11 Ii,:

[; 1, <111 c.1r1c111gemcnt of four rc<.1 c; t;incc<. n >r111 cc tcd f·nr ,1 11111f t1r n1 \-.1r "\I lrl
to f o r rn the ;,nm of quc1dri l.11 c r;i l AR(,[) A battery ( ,,ndtl l ! Il l
w ith key and g,1lv.111omct cr arc conncc led ,,long ,\I h.11,irh l"d <,J I 11 , ll 11111 rl l I r, f •
1t<, two cl i;igon il ls, rc, pcctivc ly
I' }<
B nr
( I ( ll()

I Ill l
) '
' ) ~ I
C:
,
\\, line. / t \ I IH' Ii.ii knw h

/s
Int Ill ),:

NOTE M PIN hml)ot•' 1, d ,,, '· w,~•• i , \l 1rl1> """" bnlfg.,

/
D
E Joule's Law of Heating
·
( )-
rli e ,1111ount o f hl', ll prt>d11, t·d 111 ,
K ,i

conrl u rt nr, fl , , ~ , vcn r,._,

P! Q = R /S ff ~ I I<!
where, P, Q = ratio arms, or ff I • Rt
R = known resistance
II V/t
and S = unknown resistance. !RI
The bridge is said to be balanced, when or v'
II t
(i) Vn = V0 I<
{ti) There is n o flow of current throug h w here, =
R rcsi'ililn ce of c.ondu ctor
galvanometer. I= amo u nt of c.urrcnt f!lw, mg
The Wheatstone bridge is s aid to be sensitive, if it and t = time .
gives ample deflection in the galvanomete r even
on s light change of resis tance. For sen sitivity of Electric Power
gal vanometer, the magnitude o f four resis tances The rate of consu mption of ckunc,11 ._•nt.:rg\ <>r
P, Q, R, S shouJd be of same order. production o f hea t L'ncr1'?y is krW\\ Tl ,1 , de.-t nl
powe r. SJ unit of electric power i, \hllt ( \,\/).
Meter Bridge Electric power, P = t~R = v 2 ' R [:. ~ = !RI
R s
1P =VII
Unit in the con1merciul uni t of ckdric L"ncrg)- .
I unit = I kWh = 3.6 x 10 6 J

It" Vs = spec ified volta~e :ind Wis ...-...,tta ~L' of

- (100 - 1) - bulb o r applian ce, thcn res ist.Jl\CL' of b ulb nl
E K
, , t--(•)--NNv'-- vi
appl iance, R =-'
w
If V" is a p p l ied vo l t-tgL', 1hc11 Jct11,1I pdw<"t
11 is an electri ca l devi ce 11 scd 10 d e te rmine the v2 v~
rcc.i c; ta n c c an d h e n c e s p ec ifi c r e, is tilncc of <."O ll S ll lll C:d , I '., = I ., H
R v,·
rnar c ri,il of g iven w ire/ conduc tor.
 8. Two electric bulb s P and Q hav e th eir
resi stan ces in the rati o of 1 : 2. The y are

PREVIOUS YEARS' connected in seri es across a batt ery.

Find the rati o of the power diss ipat ion
EXAMINATION QU ESTIONS in thes e bulb s .2010
9. In a pote ntio met er arra nge men t for
TOPIC 3 dete rmi ning the emf of a cell , the
bala nce poin t of the cell in ope n circ uit
is
0 , rv,ark Questions
350 cm. Wh en a resi stan ce of 9 n is used
in the exte rnal circ uit of the cell , the
. hrome and copper wires of sam e leng th bala nce poin t shif ts to 300 cm.
1 NlC
r
· d same radi us are connecte d m

~r
. .
series.
rent I is pass ed thro ugh them . Which
wire gets heat ed up more? Just ify· your
Det erm ine the inte rnal resi stan ce of the
cell. 2010
10_ Use Kirc hho ffs rule s to obta in ?~la
answer. All lndla 2011 n~e
cond ition s for the bala nce con ditio ns m
a
2, State the underly ?
ing principle of a Wh eats tone brid ge. All India 2015
potentiometer. Delhi 2014C 11 . (i) Stat e the prin cipl e of wor king
of a
3 Aheating elem ent is mar ked 210 V, pote ntio met er .
' 630 W. What is the valu e of the curr ent (ii) In the following pote ntio met er,
drawn by the elem ent whe n connected to circ uit AB is a unif or m wire of
a
Zl0 V DC source? Delhi 2013 leng th 1 m and resi stan ce 10 Q.
Calc ulat e the pote ntia l gra dien t
4. Aresistance R is connected across a cell of
emf E and internal resistance r. Now, a along the wire and bala nce leng th
potentiometer measures the pote ntia l AO(f'J.
difference between the term inal s of the cells
as V. Write the expression for r in term s of
E,
Vand R. Delhi 2011, 2010
5. In an experiment on met er brid ge, if the Al--- - 0
- -- -.----- B
balancing leng th AC is X, wha t would be
its value, when the radi us of the met er
bridge wire AB is doubled? Just ify your
answer. All India 2011c
6. In a meter bridge, two unk now n resi stan ces o.3n
Rand S when connected in the two gaps, Delhi 2015C
give a null point at 40 cm from one end. 12. A pote ntio met er wir e of leng th l m has
What is the ratio of R and S? Delhi 2010 a
resi stan ce of 10 n is sup pli ed a con stan
t
volt age of 6 V. Det erm ine the emf of the
0 2 Marks Questions prim ary cell whi ch give s a bala nce poi
nt
7 at 40 cm. Delhi 2014
. Two bulbs are rate d (P , V) and (P , V). If
1 2
they are connected (i) in seri es and (ii) in Or A pote ntio met er wire of leng th 1 m has
a
P~r~llel across a supp ly V, find the pow er resi stan ce of 5 n. It is con nec ted to a
8V
dissipated in the two com bina tion s in term batt ery in seri es with a resi stan ce of
s 15
of~ and P2. Q!lhi 2019 Q. Det erm ine the emf of the prim ary
cell
whi ch gives a bala nce poin t at 60 cm.
Delhi 2014