X2-Class HiPerFETTM IXFK100N65X2 VDSS = 650V

Power MOSFET IXFX100N65X2 ID25 = 100A

RDS(on)  
30m
N-Channel Enhancement Mode
Avalanche Rated
Fast Intrinsic Diode TO-264 (IXFK)

Symbol Test Conditions Maximum Ratings

G
VDSS TJ = 25C to 150C 650 V D
Tab
VDGR TJ = 25C to 150C, RGS = 1M 650 V S

VGSS Continuous  30 V PLUS247 (IXFX)

VGSM Transient  40 V
ID25 TC = 25C 100 A
IDM TC = 25C, Pulse Width Limited by TJM 200 A
IA TC = 25C 15 A G
EAS TC = 25C 3.5 J D Tab
S
PD TC = 25C 1040 W
dv/dt IS  IDM, VDD  VDSS, TJ  150°C 50 V/ns
G = Gate D = Drain
TJ -55 ... +150 C S = Source Tab = Drain
TJM 150 C
Tstg -55 ... +150 C
TL Maximum Lead Temperature for Soldering 300 °C Features
TSOLD 1.6 mm (0.062in.) from Case for 10s 260 °C 
International Standard Packages
Md Mounting Torque (TO-264) 1.13/10 Nm/lb.in 
Low QG
FC Mounting Force (PLUS247) 20..120 /4.5..27 N/lb

Avalanche Rated

Low Package Inductance
Weight TO-264 10 g
PLUS247 6 g
Advantages


High Power Density

Easy to Mount
Symbol Test Conditions Characteristic Values 
Space Savings
(TJ = 25C Unless Otherwise Specified) Min. Typ. Max.
BVDSS VGS = 0V, ID = 1mA 650 V
Applications
VGS(th) VDS = VGS, ID = 4mA 3.5 5.0 V

Switch-Mode and Resonant-Mode
IGSS VGS =  30V, VDS = 0V 100 nA Power Supplies

DC-DC Converters
IDSS VDS = VDSS, VGS= 0V 50 A 
PFC Circuits
TJ = 125C 5 mA 
AC and DC Motor Drives
RDS(on) VGS = 10V, ID = 0.5 • ID25, Note 1 30 m

Robotics and Servo Controls

© 2016 IXYS CORPORATION, All Rights Reserved DS100684C(12/16)

 IXFK100N65X2
IXFX100N65X2
Symbol Test Conditions Characteristic Values TO-264 Outline
(TJ = 25C, Unless Otherwise Specified) Min. Typ. Max E A

gfs VDS = 10V, ID = 0.5 • ID25, Note 1 40 68 S Q S

R Q1
RGi Gate Input Resistance 0.7  D
R1
Ciss 10.8 nF 1 2 3 L1

Coss VGS = 0V, VDS = 25V, f = 1MHz 6000 pF

L
Crss 2.6 pF
c

Effective Output Capacitance b1

b2
b A1
x2 e
Co(er) Energy related VGS = 0V 365 pF
Co(tr) Time related VDS = 0.8 • VDSS 1500 pF 4 0P
Terminals: 1 = Gate
BACK SIDE
2,4 = Drain
td(on) 37 ns 3 = Source

tr Resistive Switching Times 26 ns

td(off) VGS = 10V, VDS = 0.5 • VDSS, ID = 0.5 • ID25 90 ns
tf RG = 2(External) 13 ns
Qg(on) 183 nC
Qgs VGS = 10V, VDS = 0.5 • VDSS, ID = 0.5 • ID25 60 nC
Qgd 62 nC
RthJC 0.12C/W
RthCS 0.15C/W

PLUS247TM Outline
Source-Drain Diode A
A2 E Q E1

D2
Symbol Test Conditions Characteristic Values R
D1
(TJ = 25C, Unless Otherwise Specified) Min. Typ. Max. D

4
IS VGS = 0V 100 A 1 2 3
L1
ISM Repetitive, Pulse Width Limited by TJM 400 A
L
VSD IF = IS , VGS = 0V, Note 1 1.4 V
trr 200 ns
IF = 50A, -di/dt = 100A/s C
A1 b
3 PLCS b2 2 PLCS
e
2 PLCS
QRM 1.7  μC b4
VR = 100V, VGS = 0V Terminals: 1 - Gate
IRM 17.2 A 2,4 - Drain
3 - Source

Note 1. Pulse test, t  300s, duty cycle, d 2%.

IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.
IXYS MOSFETs and IGBTs are covered 4,835,592 4,931,844 5,049,961 5,237,481 6,162,665 6,404,065 B1 6,683,344 6,727,585 7,005,734 B2 7,157,338B2
by one or more of the following U.S. patents: 4,860,072 5,017,508 5,063,307 5,381,025 6,259,123 B1 6,534,343 6,710,405 B2 6,759,692 7,063,975 B2
4,881,106 5,034,796 5,187,117 5,486,715 6,306,728 B1 6,583,505 6,710,463 6,771,478 B2 7,071,537
 IXFK100N65X2
IXFX100N65X2

Fig. 1. Output Characteristics @ TJ = 25ºC Fig. 2. Extended Output Characteristics @ TJ = 25ºC

100 240
VGS = 10V VGS = 10V
90
8V 9V
200
80
7V
8V
70
160
I D - Amperes

I D - Amperes
60

50 120
7V
40 6V

80
30

20 6V
40
10 5V 5V
0 0
0 0.5 1 1.5 2 2.5 3 3.5 0 5 10 15 20 25
VDS - Volts VDS - Volts

Fig. 4. RDS(on) Normalized to ID = 50A Value vs.

Fig. 3. Output Characteristics @ TJ = 125ºC
Junction Temperature
100 3.4
VGS = 10V
90 8V VGS = 10V
3.0
7V
80
2.6
RDS(on) - Normalized

70
6V
2.2 I D = 100A
I D - Amperes

60

50 1.8
I D = 50A
40
1.4

30
5V 1.0
20
0.6
10
4V
0 0.2
0 1 2 3 4 5 6 7 8 -50 -25 0 25 50 75 100 125 150
VDS - Volts TJ - Degrees Centigrade

Fig. 5. RDS(on) Normalized to ID = 50A Value vs. Fig. 6. Normalized Breakdown & Threshold Voltages
Drain Current vs. Junction Temperature
4.5 1.3

VGS = 10V
4.0 1.2
BVDSS / VGS(th) - Normalized

3.5 1.1 BVDSS

TJ = 125ºC
R DS(on) - Normalized

3.0 1.0

2.5 0.9

2.0 0.8
TJ = 25ºC
VGS(th)
1.5 0.7

1.0 0.6

0.5 0.5
0 20 40 60 80 100 120 140 160 180 200 220 240 -60 -40 -20 0 20 40 60 80 100 120 140 160
I D - Amperes TJ - Degrees Centigrade

© 2016 IXYS CORPORATION, All Rights Reserved

 IXFK100N65X2
IXFX100N65X2

Fig. 7. Maximum Drain Current vs. Case Temperature Fig. 8. Input Admittance
110 140

100
120
90

80 100
TJ = 125ºC
70
I D - Amperes

I D - Amperes
25ºC
80 - 40ºC
60

50
60
40

30 40

20
20
10

0 0
-50 -25 0 25 50 75 100 125 150 3.5 4.0 4.5 5.0 5.5 6.0 6.5 7.0 7.5
TC - Degrees Centigrade VGS - Volts

Fig. 9. Transconductance Fig. 10. Forward Voltage Drop of Intrinsic Diode

140 200
TJ = - 40ºC
180
120
160

100 140
25ºC
g f s - Siemens

I S - Amperes

120
80
125ºC
100
60
80
TJ = 125ºC
40 60

40 TJ = 25ºC
20
20

0 0
0 20 40 60 80 100 120 140 160 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 1.1 1.2 1.3
I D - Amperes VSD - Volts

Fig. 11. Gate Charge Fig. 12. Capacitance

10 100,000

VDS = 325V
I D = 50A
8 10,000
Capacitance - PicoFarads

I G = 10mA
Ciss

1,000
V GS - Volts

4 100 Coss

2 10
f = 1 MHz
Crss

0 1
0 20 40 60 80 100 120 140 160 180 200 1 10 100 1000
QG - NanoCoulombs VDS - Volts

IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.
 IXFK100N65X2
IXFX100N65X2

Fig. 13. Output Capacitance Stored Energy Fig. 14. Forward-Bias Safe Operating Area
90 1000

80 RDS(on) Limit

70
100
25µs
E OSS - MicroJoules

60

I D - Amperes
100µs
50
10
40

30

1 1ms
20 TJ = 150ºC
TC = 25ºC
10
Single Pulse
10ms
0 0.1
0 100 200 300 400 Fig.500
15. Maximum
600 Transient Thermal
10 Impedance 100 1,000
1 VDS - Volts VDS - Volts

Fig. 15. Maximum Transient Thermal Impedance

aaaaa
0.3

0.1
Z(th)JC - K / W

0.01

0.001
0.00001 0.0001 0.001 0.01 0.1 1 10
Pulse Width - Seconds

© 2016 IXYS CORPORATION, All Rights Reserved IXYS REF: F_100N65X2(X8-S602) 12-14-15
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