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MES's Abasaheb Garware College Pune 4: Department of Electronic Science

The document describes the working of a Uni Junction Transistor (UJT). It consists of a N-type silicon bar with electrical connections on each end called the base leads (B1 and B2). A PN junction is formed between a P-type emitter and the N-type bar near B2. The UJT has one PN junction and three leads. It exhibits unique switching characteristics and can be used in applications like switching, triggering, timing circuits and oscillators. When a positive voltage is applied between the bases, a voltage gradient is formed along the bar. If the emitter voltage exceeds a threshold voltage, the PN junction becomes forward biased and the device turns on with emitter current increasing.

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Atharva Dhumal
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61 views

MES's Abasaheb Garware College Pune 4: Department of Electronic Science

The document describes the working of a Uni Junction Transistor (UJT). It consists of a N-type silicon bar with electrical connections on each end called the base leads (B1 and B2). A PN junction is formed between a P-type emitter and the N-type bar near B2. The UJT has one PN junction and three leads. It exhibits unique switching characteristics and can be used in applications like switching, triggering, timing circuits and oscillators. When a positive voltage is applied between the bases, a voltage gradient is formed along the bar. If the emitter voltage exceeds a threshold voltage, the PN junction becomes forward biased and the device turns on with emitter current increasing.

Uploaded by

Atharva Dhumal
Copyright
© © All Rights Reserved
We take content rights seriously. If you suspect this is your content, claim it here.
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You are on page 1/ 17

M E S’s

Abasaheb Garware College Pune 4

Junior wing
FYJC Paper II
Sudhir Bhosale
Department of Electronic Science
Chapter 2

UJT (Uni Junction Transistor)


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 Introduction :
 UJT stands for Uni Junction Transistor.
 It is a three terminal semiconductor switching device.
 The Unijunction Transistor is also known as Double Base Diode
 Due to its unique characteristic, the device can be employed in a
variety of applications such as:
 Switching Device
 Triggering Device for Triacs and SCR’s
 Timing Circuits
 For phase control
 In saw-tooth generators
 In simple relaxation oscillators
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 UJT :
 It consist of a n – type silicon bar with an electrical connection on
each end, which are called as base leads i.e base1 B1 and base2 B2.
 Near to base2 B2 than B1 a PN junction is formed between a P type
emitter and N type bar.
 Figure shows the symbol of UJT.

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 The following points must be noted :
 Since the device has one p-n junction and three leads, it is
commonly called a unijunction transistor.
 With only one p-n junction, the device is really a form of diode
( double based diode).
 The emitter is heavily doped having many holes. However the n
region is lightly doped.
 Therefore the resistance between the base terminals is very high
( 5 k Ω to 10 kΩ ), when emitter is open.

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 Working of UJT (Uni Junction Transistor) :
 Normally base B2 is positive
with respect to base B1 .
 If voltage is applied at VBB
with emitter open, a voltage
gradient is developed along
the n type bar.
 Since emitter is located nearer to B2 more than half of VBB appears
between emitter and B1, which establishes a reverse bias on the p-n
junction and the emitter current is cut-off.
 There is small leakage current due to minority carriers.

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 Working of UJT (Uni Junction Transistor) :
If a positive voltage is applied at
the emitter, the p-n junction will
remain reverse biased so long as
the input voltage is less than V1.
 If the input voltage to the
emitter exceed V1, the p-n junction becomes forward biased.
 Under these conditions, holes are injected from p type material into
the n type bar. These holes are repelled by positive B2 terminal and
they are attracted towards B1 terminal of the bar.
 This accumulation of the holes in the emitter to B1 region results in
the decrease of resistance in this section of the bar.
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 Working of UJT (Uni Junction Transistor) :
The result is that internal voltage
drop from emitter to base B1 is
decreased, and hence the emitter
current IE increases.
 As more holes are injected, a
condition of saturation will be reached.
 At this point the emitter current is limited by emitter power supply
only. The device is now in the ON state.
 If a negative pulse is applied to the emitter, the p-n junction is
reverse biased and the emitter current is cut-off. The device is then
said to be in the off state.
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 Equivalent circuit of UJT (Uni Junction Transistor) :

The resistance of silicon bar is called inter base resistance RBB.


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 Equivalent circuit of UJT (Uni Junction Transistor) :
The resistance RB1 is shown
variable because its value depends
upon the bias voltage across the
the p-n junction.
 With no voltage applied to UJT,
the inter base resistance is given by
RBB = RB1 + RB2 (4 k to 10 k Ω)
 If a voltage VBB is applied between the bases with emitter open,
voltage across RB1 is RB1 V1 RB1
𝑉1 = VBB =
RB1 + RB2 VBB RB1 + RB2
 The ratio V1/VBB is called intrinsic stand off ratio and is represented
by Greek letter . Therefore V1 =  VBB. ( lies bet. 0.51 & 0.82)
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 I – V characteristic of UJT (Uni Junction Transistor) :

 Figure shows the curve between emitter voltage VE and emitter


current IE of a UJT at a given voltage VBB.
 Initially in the cut-off region, as VE increases from zero, slight
leakage current flows from terminal B2 to the emitter.
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 I – V characteristic of UJT (Uni Junction Transistor) :
 This current is due to the minority
carriers in the reverse biased diode.
 Above a certain value of VE,
forward emitter current IE begins
to flow, increasing until the peak
voltage VP and current IP.
 After the peak point VP, an attempt to increase VE is followed by a
sudden increase in emitter current IE with corresponding decrease in
VE. This is a negative resistance portion of the curve.
 The negative portion of the curve lasts until the valley point is
reached with valley voltage VV and current IV.
 After the valley point, the device is driven into saturation.
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 Sawtooth Oscillator using UJT (Uni Junction Transistor) :

 Figure shows the circuit diagram of saw tooth oscillator.


 It is also called as Relaxation oscillator.
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 Sawtooth Oscillator using UJT (Uni Junction Transistor) :
When a voltage (Vs) is firstly applied,
the unijunction transistor is “OFF”.
 As a result capacitor C1 start charging
exponentially through resistor R3.
 As the Emitter of the UJT is connected
to the capacitor, emitter voltage VE
increases.
 When the voltage Vc across the capacitor becomes greater than the
diode volt drop value (VP = ηVBB + VD) , the p-n junction becomes
forward biased triggering the UJT into conduction.
 The unijunction transistor is “ON”. At this point the Emitter to B1
impedance collapses to a very low value (RB1 resistance decreases
from kΩ to few Ω). The Emitter current IE through [email protected]
1 increases.
 Sawtooth Oscillator using UJT (Uni Junction Transistor) :
 As the value of resistor R1 is very low, the capacitor discharges
rapidly through the UJT. The discharging time is less than the
charging time as the capacitor discharges through the low
resistance UJT.
 When the voltage across the capacitor decreases the diode becomes
reverse biased, the UJT turns “OFF” and once again the capacitor
starts charging through resistor R3.
 This charging and discharging process between VON and VOFF is
constantly repeated while there is a supply voltage, Vs applied.
1
 The period T is given by 𝑇 = 𝑅𝐶𝑙𝑛
1− 
1
𝑇 = 2.303𝑅𝐶 𝑙𝑜𝑔10
1− 
 Problems :
1) Calculate the frequency of oscillation if R = 1 kΩ and C = 0.1μF.
Given η = 0.68
1
 The period T is given by 𝑇 = 2.303𝑅𝐶 𝑙𝑜𝑔10
1− 
1 1
 For η = 0.68 𝑙𝑜𝑔10
1 − 0.68
= 𝑙𝑜𝑔10
0.32
= log10(3.125)

𝑙𝑜𝑔10 (3.125) = 0.494


 Therefore T = 2.303 x 1k x 0.1μ x 0.494 = 0.1138 x 10-3

 Frequency of oscillation f = 1 / T = 1 / 0.1138 x 10-3


 f = 8.78 kHz

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Thank You

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