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BJT Configurations and Biasing Techniques

1) The document describes the characteristics and operating regions of a PNP bipolar junction transistor, including the active, cutoff, and saturation regions. 2) Key aspects discussed include the transistor's input and output characteristics like gain, resistance, and how they vary based on the transistor operating region and bias conditions. 3) The common emitter configuration is also summarized, noting its input characteristics are similar to the common base configuration due to early effect.

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Shruti
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0% found this document useful (0 votes)
85 views

BJT Configurations and Biasing Techniques

1) The document describes the characteristics and operating regions of a PNP bipolar junction transistor, including the active, cutoff, and saturation regions. 2) Key aspects discussed include the transistor's input and output characteristics like gain, resistance, and how they vary based on the transistor operating region and bias conditions. 3) The common emitter configuration is also summarized, noting its input characteristics are similar to the common base configuration due to early effect.

Uploaded by

Shruti
Copyright
© © All Rights Reserved
We take content rights seriously. If you suspect this is your content, claim it here.
Available Formats
Download as PDF, TXT or read online on Scribd
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3 0August, 2012

Bibslar JuncHion ransistor

P--transistor in active mode


Jc
Ie -Tpe+INE Ipe Minomti.
Canier injecten_S
hotes
NE Tra
uim
fco IpcotLNc Mayoril Camier nje YEB>0
(Pt
) - large aignal urent g n
valid only tor active FFenE. regim)
or C emHguraion

fE 1TE (IE,lp ,le all +ve wth thu direchon)

P-n-P

cte TeTe
I ,Te,Tc a +ve his digeckon

-n
YcE
Yee+ e o.

(Vee-Vee, Yec = -Vce ; Ven= - Vec

NE
(Eer f o l )
Common Emitley (mmon C.tlcetrr
Cmmgn
) Input Temina E
)Otput Teminal C C
) Common Temin E C
) Oyvent Gain, Az high (mederate) Very hih. Ve isuo (<1)
Vettage Sain, Av high (moterate). very lsuw (<1)
) Inbt Resittance, Ri htph (meckrate) ve high Yery 0 s
utput Resutance, R hig mocderate) Yen bouo
very hh
Pouer am Highest Moderate Mocerat
Ap Av Ar)
180
Phase Shit
) Normally wed as Amptiker: in mulHsta ufer (vcltoge) igh freg aliati
Bupfer (uret)

Earpect/ease widh Modulkon


e Phasicat bose vidl lhen Celech Aunc RO-

e feci've base cuiolh = w w


v
deplehon wialh.
Nsl

A IVeel Je besme move RB and e theeore TeLorvbinahan


and hence le d and 1
NA>N

P n n

-
P

o
d
Pno Nou, duu to earp.
eet y and.

e w 1 When.ee
then he mditton is called

reach Rrough raneh Aresgr


Te wu ve Jage
bae uid
The vaatien eeutve bate wid wth IVcel alled
modulation o e t et. This reults in totlowing
chance ecsmbirnaton in Bose T as edtve bee
her i les
tauing a n cstector uret Ie.
widkireduces. TheseJoe,
Camies in base repio) alsa
) Cnc 9radicat o neted hotes miniby
uneted
du to reduced boae wid Smu diPusion Curreni4 ed
pafona to cane odient E ako 1.

efeiive boue snd


R to 0
may be.edued
t lge value
Cauinaexherylonge I
ot Ve Thu Tesult in breakdoun stmsistor
and u Cailad unch througk m reach u

Input and utput Characristics

Cotmmen Boue snH9raion

choraaenistbe KeVe
RE VE tf
Ven
Vee= (e, Ve)
P chaatdenktic
Ic f(1e, Vs)
S a r o t o n R g e

Te
Acttre Regis-
Butpat eharacknsue 3omA
IcfetIco
CutRegin- 20mA
Te 26m

kStle-le Ip-Tco 10mA

Active Reion 2

Nouo, a IVeal, Junchom moxe R.


Cutot regn)
NouO
1 du to ey etec. (bu he qfeek ju veàmall).
I n ths region, le « le anol is almos cmskant ot Vce voiaion , ence
tansiatr th Ris Csntig. Can be sed au CCCS

3)Saturatien Regisn
VcB tve : Smce Catleekor um"

le amgst cmstamt henc , Ve1 (+ve valun) wil and henca l


deueoLe0 Vce rards +ve vabua.-tor. t o n t p ureat.-
Vce-Nee tTP
heR.+en re-a from irtuit VeVeet+IR
e 1 . , then Tet. R Vee wd_movetuards +ue .
When ITRe> IYccl,*hen. Vce
Aer thi,
when I 1,. 1.t > Vee 1 a T' and T= -T cmstanE
hun ca uTrent i l not change e r thii and he transiut wl

move into satur aluon.

Inpodant Prinks
(ulot Regian beloas Je =o.
almrs
Actie Ie riepercent o lloge Vee.
p thoracenkhie f e called. Consjomtcnrct charufersfie. .
a CCcS.
and alove Ie co,
The egion lof tn Veg =0
- Satuvalion tho holso om p pfe caaur
A: the colector fu direttin
a cunentT in a

toondstyfe se ond cmstitulr


tota
dincehon o +T for ta valuu of +Venlasge ahor in
Even

ehamclerichcs tall totond a Vce mode Me t.Msre+ve


place and
eeh become -V¬
Sinu T 1 cxfmentiall c moy

Iput Chatackeristiu - , Ves

Vea

EE (l6, Vea).
Movn lefwmds coen
Similar t. durda
Whun Vea a , . , C>0C dut to eay fkt Fe thore.))

4hen tharc wU be smilar to oltbde


Lihon Vcs= 0, J= slgk R
Du to
ealy effect, Te 1 more vapiolly
Nea, As Vee t, mare enrty fesh Ve Copen
VE
Ve
Dua t ecmy ekeh

L)CoMmCN EMnTER CONH URAT ION

p charc
Yeg f, In,Vee)
p chare ce
. VeE Vec
e 4 . (T, Vee).

T le+Lco
= (1 Te) + Jo

-d) 1-
Í (nA)

netive - -

8utbut Chavaceristie
hctive Rem
02
-VceVce = Ye-V= Ve uft N

As Vce T Ve t J more RB idh 4


Nou 0 99 o98S
49 6 341 cant be negtscked
Ureot aain is hgh, ke,. Small change in lg Tesulb in arge change in le

Cutoegm hon
When Te=0, (p+1)l0o
=(pt) Tet Teo and tronsitor 4 nst in cudt o
|Toeo =(P+Dep Tco
-
TeED e o , P>>1.

-Nou t le =lco; should be


When le-0 TesTcao fe

Te ED Vee TE.20

he Tc in a heico! (veal¥ non-idcalisad devica ven Te o i dujanakd.


- ymbs{. Ieso.
Cut i deined o4 a cmdihon herc T= leo and 9e-0. h _oroer to
tutr tromsistr , àt a mot ensug to rekute Ip to0, ng4cad it
TeLAAs0y t R he emikter fun syhtly ie, ee - Ve.
VeE 0:1 for 6e 0.0orS.
he attiol Tc wR colleakr ureh Ro & bose. o.c
daigmaked b
&ymbo ICED
BO recrse colector Sacturatto curn
co
Tuo factos Coooeroe to ake I¢ao larger thon
thnth fune), bw
a) There exisf a loakage ument which ftours nf
aund t and #rttgts surtocas and i » vstage a s the
tuneh,
Neuo carier may be tnesaled by astlison tn J kansihon rcgts5
Lsadirg o ayalanhe muttiplicati om urment
Ice = A or Ge
Iceo
nA for
Lev apprumalely.. doukes eery lo rise em or bok Ge l-s
in
and
ned can be ued uto about 26C ano Ge upto ab6ut nc.

3 August,2012
Je F

aturation-

JE FB, JeFB
et70 Vee
Te- 1 Mee = Vee -leR (pomekh)
than JeT anod Vte
Ahen VBE 08V
,thon e T duu to bame Dauwerng
Yee.= O:2V dnd s Cmstant. rtfher. 1 in Vge
When
VceVCEsat =0:2
Je
csa
-

Vee -Vcesat
Rc

Ned Yee tVes + Vec 09 VcE-Yee +Voe 0


2-0.8 = -
0:6V. Veso
Vce =

Je Ae. » and Teverse current lll sta- {owing


Nauo
and tha dee Tromsistor tuil go inb Satu ralon
nieh ll prse Te

1Voe When
eph costant amd Vee is ehasged-
Vec ke
anc hen it iu -ve then Je £B.
ce VE-VeE Vces
Setuation
Checkingansutororsatuatien
xlet win salusatien.
hen Vee Esat
=
Vee eesat Ncc

Icsat =
Vec - VcEsat

and Tesat BLemin Iemin Tccat

Noxo, i g>lpmin han tronsitor in satuvation

Re
To bring tranaiutor n satuntien
Increase to b TVee 0 that Te Temi
Ie Cmstant, then a min do thak Temine Vcc and/ TRe
Io matot lcsat= cstomd, then p haTeTemim To
At Pred
Ipmin Tesat Jesat
T
Prced
Imbortant Points fer saturation-
b o t JE. Te are Fe by cuin vattage Vw.
tomsiutor has to be operaed tn sauralion Tegm,we skadd
a
design he ekt, s0 tha Leamin a adr. t 2 t 10
The ratud a Icsa Te to ensure soturationi callidtored. P.
e2
Veeo
N
nput ChdractenstuL Similar
Rikt nd
FB
duu ear
-
f (lo,Vee) dida
Chara
hen VCE =0, opcha bimilar to ducla
When VcET ) Y T:*Ve :o ancd oe
fa.
No
ER ec ( Vee moe Re) BE ahve
CoTnon Cotlector Conkiguratienm
Vee To R etllecor tunc"

le cha
Vec (Je,VEc)
cho. Re
le f (b, Vec) RE =RL

Qutbut ehanaceristrc
Ie Ble+ (14p)leo
le -Le - plsttp)les
-When Vec(-ve), VceT &T mare Re.
&due to caj fect t ond pT more sleeher Than ce
-ume is more sBeeper tham CE mta, smce
CharacensNe..
B+1) vaia" is > Vama".

mput Characken'sic
n a similar to F8 duode
p ehorateristie hot similor to
ruard leiated duods charae knC
t i taktn acncs RB unciom Re.

LAAVec
Important foinks. regarcding CC mta
H i g h e a t S oKR - sooKN)

e Ro too )
-(+A) doef CAdq
Highest At lcunet ain) lAzl= de
Le
Mocderoe CE #.
- lowest Av (<1) gpicol valuu 0 1g. Max Av=(ideas cmd), hene

A isalso caled em tter ollower.


basitall cevs
Emiber tolewer ooturin and sou ro
aloqotus to
fotlourer in FET
soince VCVS
Veltagefollou»er follourer are

oeet Pouwer qaim ; ic


valuu = 4 8

Phae shP o
Applicatim-
Righest-i/p retistanca devite.
As a ufer amplifier, ie, an impedance morcbing devia Ha Aiah
estam ce&leo eiitmee devic
A s an audis e pewer amken

Imbotant. Prints fo Ce Lmturation ir

lewest (<lo0a)
Hihest R M
lousest AI d ) .
HigReat Av.
Moderate Ap ical Valu 69.
Phose ehit =o
Ce amier willr lavgest barduridt% & henca Mare

e bicatm8.
APHucatin -

)As a cmstant eurren sOuraR

tA a nn-invrrRng sttge amie


iAr a hih eguy omite
A S an mbeclante matchimg dewce w Loso vettstma h'gh

vesistomc
00k
ind tamaistrd curentt n cF

B160 e 20 nA Si omaustr
toV
5V

yhical Junc ysltages ter nn tamsisto at 25°c.


S frr
NeEsat 02
pp tranistor, Sgn
a l l the ennes should
VeE sat V 0-3 e Teveveed
Vee acte 0 2
Vet culin Vy
Vegtutof e
VcF Qth've VECatue 70 2

So O Ro 2ook ).
Vee+re=V )VBe 4Ve Je =EB.
t un
acttve Tegusm

Te Vee-Vse S-:7 0 0215 mA


200K

Vee Io- 3K. T Yee 10- 3x 2- 3:TV >> 0 2V lean ce, toomitstr
i n ative reguon
Aemoive Vee Veg VeE VeE VBfat= 0 8
=

3 S - d.7 Vce = VeEsat = O2

2.8 tunchon u deina RB," tcat Ib3 02 3.27


3,27
S- 07 0.86 m A S-0.8
SD

GmA VcE = -3k (e. L) -1S o 2 suturatuen

-- aeevmnrwarn
Mttud

aaidon Biaung and Stablualin ero

4
o

Ve

JEf6, J e e
VcE& Ia uilctrt
V Ve dey mn
Thu puus
1ple (14p)leo witages ad
&-
httaic talld
desitd Peit
Vc Vec 1ek TR Vec-Vce> L=-

g(3)u silo 1o y : mt+C


tope - -V
lhen VeE 0,kmor cg
Re
vlen Ycem Vec Ceckc+Vee
tome ) ut Te 40ph then
P Tea = uesuen Point/operatingnt
8 f(Ta,,)

(P)(A)
e le 4 0 2i 20 cimutpa, then 4o + 20sinewt
max 60 A bwin2ouA
on Ce, prind ies ellith.in the atire eg
Rere,
ho dhsutin inthe outtut
ence raniutr ik ust in ative
Tp- 4ouA 90sinwt

20 A min 6 ean

Ts40uA 5Dsin wt
,Noo thex witl be distwhon 4n e ofp
bma 90 MA bmin10

Adyut g: 20uA, i 20sinut.


-20
CouA bm. o A. bma6o ,Tpmi2
autes
p-6ouA 0smt a 90 min 30
u ratin

mportant Prins
he. stleeer chore or ete chore o Ionisr ii divided into sehrahion,
cu ond Qutive regn
-Transistor can wod al a sutch when sferakd saturation and cutft
region, te, exkeme ends q the thaaeenishiu.

rotedure t plat pe Lsacd ne Apont

Tderti
detik the valuu Ye2 emox h _ciruit lomle. 1iu
pnt ven chaae.

2 PYuo a &saugát. line frumg loman VaL 2th shpkt ine is


ealled de load lime.
fimd thu sperair valus Je, e &Vee oy th gen ckt d Aocale Ahese
yaluas 6hiven Charrae
4 Pojet Rre.e heratma vahis on de Aoael Aine e anercapi
pint u CaUed pmt

The onsiskoy u scud to be under quuuen cmd" nhen zerv /

Sigma ied.
(19

mito an a an amplificr 4 point hin active


t oint is tem Sentiive e , a T , le1 ard
VcE so tha povnt u e Mori tosands SaLatiom
and enBered into Saturatim eaionfransistoy i l s
Drkin asan an

Tyans l svlde ma poutr aUn amplifcation, whth em


in middle o de lsad line.
a iven t a n s
iom o i aral
Shabe s 4ral litfors pm Kope f Hp a), d a

said t dited
ffor
r aa stale crit,the vanatism in -eint olut to temp

Bias Stab ilil

SHabilib u eeckd due to


)Temp hutabilily
() t doubes tor evey 1d mise n lemb
Tt Iu1a 11 & rsint shitt tewrd
ratiom
(6) Vee-
dW
slmilo
-2-5m/°c aNee 23mV{°C
dt
pVea-Vee AsT1, YeE J, JeT 1 & Vee
Nole
saturatien
Ne wlhtemb but change s4
neaza
2 Replacement oTransistur
Pu highy. ofecked du te replarement of
toansistor
Snce smoll change n « l in large
change in f)
Thesnal RunalaY c
BIß t (1+B)7e,
TT 11 deublls (vlo C Á.
Ic, ollccter- base I,?
ttimp
emulatie p»tisk
ai thu *ua wthido dtey ,trasi lor
Stablusatirn TechniquA
Biasing ec hniquuy Combe osation Techniques
C-8 biasimg ) Disde comensation
( Sel-Bioued
Sensisker Tmister Comensatisn
Tranistur csmpen.ctin

Fixed Biased iruút a Byse Resi stertd.


Vec
VccTsKs. +VA¢
Re
Vee -Vse C5nsBom Umstase)
Re

Vee

Vce
Yec (Unsinia)
VTH . Yee R

RTHe Ie Ven-VeE
Re
VpE
Nortna
Ver foor hias stüblo ckl,

Stabiliy octorSThe. exted tt. etudu thu chiliek ,Cuyent Ic


tnbiikd oth uayivy To easurtd S
Sdlc ' Sp
To
Vee Ap-tmatr LoaVee(ovtt

s dle
V | S Ic IB+ ( T )
Se Cmatn
As T, lco, Iet >S+ve
AS 71 gEV, 1 s's - ye
s . 11,1 S Ve

Gecase taumodt
nst bo4 tenp )
yunor
Stability fetor, S
ed pcomdot
In actuve Tegm,

lle
dle + (+P
dle

lco
dT

S:
B dIe

c k i is ungiable fixecl biaed

then fa shoulol i ddt <0 In Ldead case


1
S 1 Highy shabie

for S + uruit_A stabte

Range oS 1ssl4p)

TechnouesL
. Judback 9tste
Cobleckor Bae Ba binsnt t fVec
Re
Duing c analys4 , Ce, & Ce w-
Vo
aut a ofen cirouit
hen tranaiatoi active reqon
Te pla + (tp) feo O
Om manpulatimg O

S= dle
- Pp
Kecting Voe p emutant)
dles -P
=T+e) Rc +TeRe +Vese
KVL ot i)p - . Vee
Dieentioting wnt le- 0 =
etRo) dle R +0
dT
dIe Re
Ret Re

ubstitmg i n - S= < (+R) Hence tireut u


I+Rc Stable
Ret Re

+). ReRe
fo- good
Ret+ Re 1+e) stabtliandv

1Re
ReC11p)>Re Hhen
S= 1+ Rel Re arge
-Ka

7 R1& Re thenS. kence debends om load TesiuBoma

voltage shunt udbaek, hernce Riv omd Rov


There unecess a -Ye cedback, ciruit a. nst prerofe

Thetrehica Anaysiu-
fmm cirut, VeVec-(Te+1g)R and Plu1p)Jeo *

le Ve - Vee -
Re
frmm& 4T,LutVer) ardo7 Ptthen le ? - - v e feuclback.
hen Ye b u t Eg h Ve1 1cv
hereoTe e n c u c6mbentated and Te u almast Cnatmt

cirCuuwtll cempensate or all type o vaiahons


Thit
,le, Ten,Vae a
P
Emitte d i l i a l dit
Sel- Biaucd Circuit: Emitte Riaiad ckt Vce

Ven R VeeNcc a
RtR
118 V
R+R
plp +(+p)Teo -0

s iting KVL at f
-dlg8
Voe+e+)Re
Vee Ip Re +
Ke
Diferentiating omt l e - 0
Ret ke)dle +
- Re -
Re+Re

Substtuing Auneg 2. kuf

s. tP) Renu ckii


+BRE Stable
RetRe Re
R
S +) Re
Re+ (14Pke
Re
(ltP)IB+
14P)Pe >> Re, Ahun, Aevamtae resiutame
load
Ide pendent o
S I t Re
RE

ldeallyRe =, 9:1Hene,e T and/s fa then S

Inpur-2 otp reiutamu will inerea1e


* current seies feccdback
Lxptmation 1

Vg=(le+ T R Re

Vee- Vae - Ve
Re

fm , when T1, lTeo1, Vas tJandl pt, than tet VE 1


J IF ill comtst VanaHon due to all toc
'Rise An
fe utmbent aled, le u almost comslant
*
Ke iu relaced by an ideal, curent soureL, then s wll eeme
Cas Lnernalresutmce d actire (cuTrent 3ourt u vey huh ideally ).

Tdeal Curent soure,


Rs Re
Si

rachea current soLITe,


Re= Ver hih

Selt- blased uruitu also called vottage divider Pstental divndev


0r emitter bias eiruit

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