BJT Configurations and Biasing Techniques
BJT Configurations and Biasing Techniques
P-n-P
cte TeTe
I ,Te,Tc a +ve his digeckon
-n
YcE
Yee+ e o.
NE
(Eer f o l )
Common Emitley (mmon C.tlcetrr
Cmmgn
) Input Temina E
)Otput Teminal C C
) Common Temin E C
) Oyvent Gain, Az high (mederate) Very hih. Ve isuo (<1)
Vettage Sain, Av high (moterate). very lsuw (<1)
) Inbt Resittance, Ri htph (meckrate) ve high Yery 0 s
utput Resutance, R hig mocderate) Yen bouo
very hh
Pouer am Highest Moderate Mocerat
Ap Av Ar)
180
Phase Shit
) Normally wed as Amptiker: in mulHsta ufer (vcltoge) igh freg aliati
Bupfer (uret)
P n n
-
P
o
d
Pno Nou, duu to earp.
eet y and.
e w 1 When.ee
then he mditton is called
choraaenistbe KeVe
RE VE tf
Ven
Vee= (e, Ve)
P chaatdenktic
Ic f(1e, Vs)
S a r o t o n R g e
Te
Acttre Regis-
Butpat eharacknsue 3omA
IcfetIco
CutRegin- 20mA
Te 26m
Active Reion 2
3)Saturatien Regisn
VcB tve : Smce Catleekor um"
Inpodant Prinks
(ulot Regian beloas Je =o.
almrs
Actie Ie riepercent o lloge Vee.
p thoracenkhie f e called. Consjomtcnrct charufersfie. .
a CCcS.
and alove Ie co,
The egion lof tn Veg =0
- Satuvalion tho holso om p pfe caaur
A: the colector fu direttin
a cunentT in a
Vea
EE (l6, Vea).
Movn lefwmds coen
Similar t. durda
Whun Vea a , . , C>0C dut to eay fkt Fe thore.))
p charc
Yeg f, In,Vee)
p chare ce
. VeE Vec
e 4 . (T, Vee).
T le+Lco
= (1 Te) + Jo
-d) 1-
Í (nA)
netive - -
8utbut Chavaceristie
hctive Rem
02
-VceVce = Ye-V= Ve uft N
Cutoegm hon
When Te=0, (p+1)l0o
=(pt) Tet Teo and tronsitor 4 nst in cudt o
|Toeo =(P+Dep Tco
-
TeED e o , P>>1.
Te ED Vee TE.20
3 August,2012
Je F
aturation-
JE FB, JeFB
et70 Vee
Te- 1 Mee = Vee -leR (pomekh)
than JeT anod Vte
Ahen VBE 08V
,thon e T duu to bame Dauwerng
Yee.= O:2V dnd s Cmstant. rtfher. 1 in Vge
When
VceVCEsat =0:2
Je
csa
-
Vee -Vcesat
Rc
1Voe When
eph costant amd Vee is ehasged-
Vec ke
anc hen it iu -ve then Je £B.
ce VE-VeE Vces
Setuation
Checkingansutororsatuatien
xlet win salusatien.
hen Vee Esat
=
Vee eesat Ncc
Icsat =
Vec - VcEsat
Re
To bring tranaiutor n satuntien
Increase to b TVee 0 that Te Temi
Ie Cmstant, then a min do thak Temine Vcc and/ TRe
Io matot lcsat= cstomd, then p haTeTemim To
At Pred
Ipmin Tesat Jesat
T
Prced
Imbortant Points fer saturation-
b o t JE. Te are Fe by cuin vattage Vw.
tomsiutor has to be operaed tn sauralion Tegm,we skadd
a
design he ekt, s0 tha Leamin a adr. t 2 t 10
The ratud a Icsa Te to ensure soturationi callidtored. P.
e2
Veeo
N
nput ChdractenstuL Similar
Rikt nd
FB
duu ear
-
f (lo,Vee) dida
Chara
hen VCE =0, opcha bimilar to ducla
When VcET ) Y T:*Ve :o ancd oe
fa.
No
ER ec ( Vee moe Re) BE ahve
CoTnon Cotlector Conkiguratienm
Vee To R etllecor tunc"
le cha
Vec (Je,VEc)
cho. Re
le f (b, Vec) RE =RL
Qutbut ehanaceristrc
Ie Ble+ (14p)leo
le -Le - plsttp)les
-When Vec(-ve), VceT &T mare Re.
&due to caj fect t ond pT more sleeher Than ce
-ume is more sBeeper tham CE mta, smce
CharacensNe..
B+1) vaia" is > Vama".
mput Characken'sic
n a similar to F8 duode
p ehorateristie hot similor to
ruard leiated duods charae knC
t i taktn acncs RB unciom Re.
LAAVec
Important foinks. regarcding CC mta
H i g h e a t S oKR - sooKN)
e Ro too )
-(+A) doef CAdq
Highest At lcunet ain) lAzl= de
Le
Mocderoe CE #.
- lowest Av (<1) gpicol valuu 0 1g. Max Av=(ideas cmd), hene
Phae shP o
Applicatim-
Righest-i/p retistanca devite.
As a ufer amplifier, ie, an impedance morcbing devia Ha Aiah
estam ce&leo eiitmee devic
A s an audis e pewer amken
lewest (<lo0a)
Hihest R M
lousest AI d ) .
HigReat Av.
Moderate Ap ical Valu 69.
Phose ehit =o
Ce amier willr lavgest barduridt% & henca Mare
e bicatm8.
APHucatin -
vesistomc
00k
ind tamaistrd curentt n cF
B160 e 20 nA Si omaustr
toV
5V
So O Ro 2ook ).
Vee+re=V )VBe 4Ve Je =EB.
t un
acttve Tegusm
Vee Io- 3K. T Yee 10- 3x 2- 3:TV >> 0 2V lean ce, toomitstr
i n ative reguon
Aemoive Vee Veg VeE VeE VBfat= 0 8
=
-- aeevmnrwarn
Mttud
4
o
Ve
JEf6, J e e
VcE& Ia uilctrt
V Ve dey mn
Thu puus
1ple (14p)leo witages ad
&-
httaic talld
desitd Peit
Vc Vec 1ek TR Vec-Vce> L=-
(P)(A)
e le 4 0 2i 20 cimutpa, then 4o + 20sinewt
max 60 A bwin2ouA
on Ce, prind ies ellith.in the atire eg
Rere,
ho dhsutin inthe outtut
ence raniutr ik ust in ative
Tp- 4ouA 90sinwt
20 A min 6 ean
Ts40uA 5Dsin wt
,Noo thex witl be distwhon 4n e ofp
bma 90 MA bmin10
mportant Prins
he. stleeer chore or ete chore o Ionisr ii divided into sehrahion,
cu ond Qutive regn
-Transistor can wod al a sutch when sferakd saturation and cutft
region, te, exkeme ends q the thaaeenishiu.
Tderti
detik the valuu Ye2 emox h _ciruit lomle. 1iu
pnt ven chaae.
Sigma ied.
(19
said t dited
ffor
r aa stale crit,the vanatism in -eint olut to temp
Vee
Vce
Yec (Unsinia)
VTH . Yee R
RTHe Ie Ven-VeE
Re
VpE
Nortna
Ver foor hias stüblo ckl,
s dle
V | S Ic IB+ ( T )
Se Cmatn
As T, lco, Iet >S+ve
AS 71 gEV, 1 s's - ye
s . 11,1 S Ve
Gecase taumodt
nst bo4 tenp )
yunor
Stability fetor, S
ed pcomdot
In actuve Tegm,
lle
dle + (+P
dle
lco
dT
S:
B dIe
Range oS 1ssl4p)
TechnouesL
. Judback 9tste
Cobleckor Bae Ba binsnt t fVec
Re
Duing c analys4 , Ce, & Ce w-
Vo
aut a ofen cirouit
hen tranaiatoi active reqon
Te pla + (tp) feo O
Om manpulatimg O
S= dle
- Pp
Kecting Voe p emutant)
dles -P
=T+e) Rc +TeRe +Vese
KVL ot i)p - . Vee
Dieentioting wnt le- 0 =
etRo) dle R +0
dT
dIe Re
Ret Re
+). ReRe
fo- good
Ret+ Re 1+e) stabtliandv
1Re
ReC11p)>Re Hhen
S= 1+ Rel Re arge
-Ka
Thetrehica Anaysiu-
fmm cirut, VeVec-(Te+1g)R and Plu1p)Jeo *
le Ve - Vee -
Re
frmm& 4T,LutVer) ardo7 Ptthen le ? - - v e feuclback.
hen Ye b u t Eg h Ve1 1cv
hereoTe e n c u c6mbentated and Te u almast Cnatmt
Ven R VeeNcc a
RtR
118 V
R+R
plp +(+p)Teo -0
s iting KVL at f
-dlg8
Voe+e+)Re
Vee Ip Re +
Ke
Diferentiating omt l e - 0
Ret ke)dle +
- Re -
Re+Re
Vg=(le+ T R Re
Vee- Vae - Ve
Re