DISCRETE SEMICONDUCTORS

DATA SHEET

BFG31
PNP 5 GHz wideband transistor
Product specification 1995 Sep 12
Supersedes data of November 1992
NXP Semiconductors Product specification

PNP 5 GHz wideband transistor BFG31

FEATURES PINNING
 High output voltage capability PIN DESCRIPTION lfpage 4
 High gain bandwidth product 1 emitter
 Good thermal stability 2 base
 Gold metallization ensures 3 emitter
excellent reliability.
4 collector

DESCRIPTION
PNP planar epitaxial transistor 1 2 3
mounted in a plastic SOT223
Top view MSB002 - 1
envelope.
It is intended for wideband amplifier Fig.1 SOT223.
applications.
NPN complement is the BFG97.

QUICK REFERENCE DATA

SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT

VCEO collector-emitter voltage open base   15 V
IC DC collector current   100 mA
Ptot total power dissipation up to Ts = 135 C ; note 1   1 W
hFE DC current gain IC = 70 mA; VCE = 10 V; 25  
Tamb = 25 C
fT transition frequency IC = 70 mA; VCE = 10 V;  5.0  GHz
f = 500 MHz; Tamb = 25 C
GUM maximum unilateral power IC = 70 mA; VCE = 10 V;  12  dB
gain f = 800 MHz; Tamb = 25 C
Vo output voltage IC = 100 mA; VCE = 10 V;  600  mV
RL = 75 ; Tamb = 25 C

LIMITING VALUES
In accordance with the Absolute Maximum System (IEC 134).
SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
VCBO collector-base voltage open emitter  20 V
VCEO collector-emitter voltage open base  15 V
VEBO emitter-base voltage open collector  3 V
IC DC collector current  100 mA
Ptot total power dissipation up to Ts = 135 C; note 1  1 W
Tstg storage temperature 65 150 C
Tj junction temperature  175 C

Note
1. Ts is the temperature at the soldering point of the collector tab.

1995 Sep 12 2
NXP Semiconductors Product specification

PNP 5 GHz wideband transistor BFG31

THERMAL CHARACTERISTICS

SYMBOL PARAMETER CONDITIONS THERMAL RESISTANCE

Rth j-s thermal resistance from junction to up to Ts = 135 C; note 1 40 K/W
soldering point
Note
1. Ts is the temperature at the soldering point of the collector tab.

CHARACTERISTICS
Tj = 25 C unless otherwise specified.

SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT

V(BR)CBO collector-base breakdown voltage open emitter; IC = 10 mA 20   V
V(BR)CEO collector-emitter breakdown voltage open base; IC = 10 mA 18   V
V(BR)EBO emitter-base breakdown voltage open collector; IE = 0.1 mA 3   V
ICBO collector cut-off current IE = 0; VCB = 10 V   1 A
hFE DC current gain IC = 70 mA; VCE = 10 V; 25  
Tamb = 25 C
Ccb collector-base capacitance IC = 0; VCB = 10 V; f = 1 MHz;  1.8  pF
Ceb emitter-base capacitance IC = 0; VEB = 10 V; f = 1 MHz  5  pF
Cre feedback capacitance IC = 0; VCE = 10 V; f = 1 MHz;  1.6  pF
Tamb = 25 C
fT transition frequency IC = 70 mA; VCE = 10 V;  5  GHz
f = 500 MHz; Tamb = 25 C
GUM maximum unilateral power gain; note 1 IC = 70 mA; VCE = 10 V;  16  dB
f = 500 MHz; Tamb = 25 C
IC = 70 mA; VCE = 10 V;  12  dB
f = 800 MHz; Tamb = 25 C
Vo output voltage note 2  600  mV
Vo output voltage note 3  550  mV

Notes

s 21 2
1. GUM is the maximum unilateral power gain, assuming S12 is zero and G UM = 10 log -------------------------------------------------------- dB.
 1 – s 11 2   1 – s 22 2 

2. dim = 60 dB; IC = 70 mA; VCE = 10 V; RL = 75 ; Tamb = 25 C;

Vp = Vo at dim = 60 dB; fp = 850.25 MHz;
Vq = Vo 6 dB; fq = 858.25 MHz;
Vr = Vo 6 dB; fr = 860.25 MHz;
measured at f(p+qr) = 848.25 MHz.
3. dim = 60 dB (DIN 45004B); IC = 70 mA; VCE = 10 V; RL = 75 ; Tamb = 25 C;
Vp = Vo = at dim = 60 dB; fp = 445.25 MHz;
Vq = Vo 6 dB; fq = 453.25 MHz;
Vr = Vo 6 dB; fr = 455.25 MHz;
measured at f(p+qr) = 443.25 MHz.

1995 Sep 12 3
NXP Semiconductors Product specification

PNP 5 GHz wideband transistor BFG31

MBB344 MBB345
1.2 80
handbook,
P halfpage handbook, halfpage
tot
(W)
1.0 h FE

60
0.8

0.6 40

0.4

20
0.2

0 0
0 50 100 150 200 0 100 I C (mA) 200
T s ( o C)

VCE = 10 V; Tamb = 25 C.

Fig.3 DC current gain as a function of collector

Fig.2 Power derating curve. current.

MBB346 MBB347
6 8
handbook, halfpage handbook, halfpage
C re fT
(pF) (GHz)
5
6

2
2

1 0
0 10 20 30 0 50 100
VCE (V) I C (mA)

f = 1 MHz; Tamb = 25 C VCE = 10 V; Tamb = 25 C.

Fig.4 Feedback capacitance as a function of Fig.5 Transition frequency as a function of

collector-emitter voltage. collector current.

1995 Sep 12 4
NXP Semiconductors Product specification

PNP 5 GHz wideband transistor BFG31

MBB348 MBB349
40 50
handbook, halfpage handbook, halfpage
d im
(dB) d im
45 (dB)

55
50

55
60

60

65 65
40 60 80 100 40 60 80 100 120
I C (mA) I C (mA)

VCE = 10 V; Vo = 650 mV; Tamb = 25 C; VCE = 10 V; Vo = 550 mV; Tamb = 25 C;
f(p+qr) = 443.25 MHz. f(p+qr) = 848.25 MHz.

Fig.6 Intermodulation distortion as a function Fig.7 Intermodulation distortion as a function

of collector current. of collector current.

MBB350 MBB351
10 10
handbook, halfpage handbook, halfpage
d2 d2
(dB) (dB)
20 20

30 30

40 40

50 50

60 60
10 30 50 70 90 110 10 30 50 70 90 110
I C (mA) I C (mA)

VCE = 10 V; Vo = 50 dBmV; Tamb = 25 C; VCE = 10 V; Vo = 50 dBmV; Tamb = 25 C;
f(p+q) = 450 MHz. f(p+q) = 810 MHz.

Fig.8 Second order intermodulation distortion Fig.9 Second order intermodulation distortion
as a function of collector current. as a function of collector current.

1995 Sep 12 5
NXP Semiconductors Product specification

PNP 5 GHz wideband transistor BFG31

PACKAGE OUTLINE
Plastic surface-mounted package with increased heatsink; 4 leads SOT223

D B E A X

y
HE v M A

b1

A1

1 2 3 Lp

e1 bp w M B detail X

0 2 4 mm

scale

DIMENSIONS (mm are the original dimensions)

UNIT A A1 bp b1 c D E e e1 HE Lp Q v w y

1.8 0.10 0.80 3.1 0.32 6.7 3.7 7.3 1.1 0.95
mm 4.6 2.3 0.2 0.1 0.1
1.5 0.01 0.60 2.9 0.22 6.3 3.3 6.7 0.7 0.85

OUTLINE REFERENCES EUROPEAN

ISSUE DATE
VERSION IEC JEDEC JEITA PROJECTION

04-11-10
SOT223 SC-73
06-03-16

1995 Sep 12 6
NXP Semiconductors Product specification

PNP 5 GHz wideband transistor BFG31

DATA SHEET STATUS

DOCUMENT PRODUCT
DEFINITION
STATUS(1) STATUS(2)
Objective data sheet Development This document contains data from the objective specification for product
development.
Preliminary data sheet Qualification This document contains data from the preliminary specification.
Product data sheet Production This document contains the product specification.

Notes
1. Please consult the most recently issued document before initiating or completing a design.
2. The product status of device(s) described in this document may have changed since this document was published
and may differ in case of multiple devices. The latest product status information is available on the Internet at
URL http://www.nxp.com.

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1995 Sep 12 7
NXP Semiconductors Product specification

PNP 5 GHz wideband transistor BFG31

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1995 Sep 12 8
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Printed in The Netherlands R77/02/pp9 Date of release: 1995 Sep 12