FZ825R33HE4D

IHM-B module

IHM-B module with Trench/Fieldstop IGBT4 and emitter controlled 4 diode

Features
• Electrical features
- VCES = 3300 V
- IC nom = 825 A / ICRM = 1650 A
- Low Qg and Cres
- High DC stability
- High short-circuit capability
- Low switching losses
- Low VCE,sat
- Tvj,op = 150°C
- Trench IGBT 4
- Unbeatable robustness
- VCE,sat with positive temperature coefficient
- High current density
• Mechanical features
- AlSiC base plate for increased thermal cycling capability
- High power density
- Isolated base plate
- Package with CTI > 600
- RoHS compliant
Potential applications
• High-power converters
• Medium-voltage converters
• Motor drives
• Traction drives
• UPS systems
• Active frontend (energy recovery)
Product validation
• Qualified for industrial applications according to the relevant tests of IEC 60747, 60749 and 60068
Description

Datasheet Please read the sections "Important notice" and "Warnings" at the end of this document Revision 1.30
www.infineon.com 2022-11-22
FZ825R33HE4D
IHM-B module
Table of contents

Table of contents

Description . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1
Features . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .1
Potential applications . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1
Product validation . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1
Table of contents . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2
1 Package . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3
2 IGBT, Inverter . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3
3 Diode, Inverter . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5
4 Characteristics diagrams . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7
5 Circuit diagram . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11
6 Package outlines . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .11
7 Module label code . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12
Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13
Disclaimer . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14

Datasheet 2 Revision 1.30

2022-11-22
FZ825R33HE4D
IHM-B module
1 Package

1 Package
Table 1 Insulation coordination
Parameter Symbol Note or test condition Values Unit
Isolation test voltage VISOL RMS, f = 50 Hz 6.0 kV
Partial discharge Visol RMS, f = 50 Hz, QPD ≤ 10 pC 2.6 kV
extinction voltage
DC stability VCE(D) Tvj = 25 °C, 100 Fit 2100 V
Material of module AlSiC
baseplate
Creepage distance dCreep terminal to heatsink 32.2 mm
Clearance dClear terminal to heatsink 19.1 mm
Comparative tracking CTI > 600
index

Table 2 Characteristic values

Parameter Symbol Note or test condition Values Unit
Min. Typ. Max.
Stray inductance module LsCE 9 nH
Module lead resistance, RAA'+CC' TC = 25 °C, per switch 0.12 mΩ
terminals - chip
Module lead resistance, RCC'+EE' TC = 25 °C, per switch 0.2 mΩ
terminals - chip
Storage temperature Tstg -40 150 °C
Mounting torque for M - Mounting according to M6, Screw 4.25 5.75 Nm
module mounting valid application note
Terminal connection M - Mounting according to M4, Screw 1.8 2.1 Nm
torque valid application note
M8, Screw 8 10
Weight G 800 g

2 IGBT, Inverter
Table 3 Maximum rated values
Parameter Symbol Note or test condition Values Unit
Collector-emitter voltage VCES Tvj = -40 °C 3300 V
Tvj = 150 °C 3300
Continuous DC collector ICDC Tvj max = 150 °C TC = 105 °C 825 A
current
Repetitive peak collector ICRM tp limited by Tvj op 1650 A
current
(table continues...)
Datasheet 3 Revision 1.30
2022-11-22
FZ825R33HE4D
IHM-B module
2 IGBT, Inverter

Table 3 (continued) Maximum rated values

Parameter Symbol Note or test condition Values Unit
Gate-emitter peak voltage VGES ±20 V

Table 4 Characteristic values

Parameter Symbol Note or test condition Values Unit
Min. Typ. Max.
Collector-emitter VCE sat IC = 825 A, VGE = 15 V Tvj = 25 °C 2.40 2.65 V
saturation voltage
Tvj = 125 °C 3.00
Tvj = 150 °C 3.13 3.28
Gate threshold voltage VGEth IC = 32 mA, VCE = VGE, Tvj = 25 °C 5.20 5.80 6.40 V
Gate charge QG VGE = ±15 V, VCC = 1800 V 14 µC
Internal gate resistor RGint Tvj = 25 °C 1.5 Ω
Input capacitance Cies f = 1000 kHz, Tvj = 25 °C, VCE = 25 V, VGE = 0 V 93.5 nF
Reverse transfer Cres f = 1000 kHz, Tvj = 25 °C, VCE = 25 V, VGE = 0 V 2.67 nF
capacitance
Collector-emitter cut-off ICES VCE = 3300 V, VGE = 0 V Tvj = 25 °C 5 mA
current
Gate-emitter leakage IGES VCE = 0 V, VGE = 20 V, Tvj = 25 °C 400 nA
current
Turn-on delay time tdon IC = 825 A, VCC = 1800 V, Tvj = 25 °C 0.560 µs
(inductive load) VGE = ±15 V, RGon = 0.5 Ω
Tvj = 125 °C 0.605
Tvj = 150 °C 0.615
Rise time (inductive load) tr IC = 825 A, VCC = 1800 V, Tvj = 25 °C 0.130 µs
VGE = ±15 V, RGon = 0.5 Ω
Tvj = 125 °C 0.150
Tvj = 150 °C 0.160
Turn-off delay time tdoff IC = 825 A, VCC = 1800 V, Tvj = 25 °C 3.200 µs
(inductive load) VGE = ±15 V, RGoff = 7 Ω
Tvj = 125 °C 3.450
Tvj = 150 °C 3.500
Fall time (inductive load) tf IC = 825 A, VCC = 1800 V, Tvj = 25 °C 0.900 µs
VGE = ±15 V, RGoff = 7 Ω
Tvj = 125 °C 1.450
Tvj = 150 °C 1.650
Turn-on time (resistive ton_R IC = 500 A, VCC = 2000 V, Tvj = 25 °C 1.09 µs
load) VGE = ±15 V, RGon = 0.5 Ω
Turn-on energy loss per Eon IC = 825 A, VCC = 1800 V, Tvj = 25 °C 920 mJ
pulse Lσ = 85 nH, VGE = ±15 V,
Tvj = 125 °C 1450
RGon = 0.5 Ω, di/dt =
4700 A/µs (Tvj = 150 °C) Tvj = 150 °C 1630
(table continues...)

Datasheet 4 Revision 1.30

2022-11-22
FZ825R33HE4D
IHM-B module
3 Diode, Inverter

Table 4 (continued) Characteristic values

Parameter Symbol Note or test condition Values Unit
Min. Typ. Max.
Turn-off energy loss per Eoff IC = 825 A, VCC = 1800 V, Tvj = 25 °C 1100 mJ
pulse Lσ = 85 nH, VGE = ±15 V,
Tvj = 125 °C 1470
RGoff = 7 Ω, dv/dt = 1700
V/µs (Tvj = 150 °C) Tvj = 150 °C 1580
SC data ISC VGE ≤ 15 V, VCC = 2400 V, tP ≤ 10 µs, 3600 A
VCEmax=VCES-LsCE*di/dt Tvj ≤ 150 °C
Thermal resistance, RthJC per IGBT 18.0 K/kW
junction to case
Thermal resistance, case to RthCH per IGBT 7.17 K/kW
heat sink
Temperature under Tvj op -40 150 °C
switching conditions

3 Diode, Inverter
Table 5 Maximum rated values
Parameter Symbol Note or test condition Values Unit
Repetitive peak reverse VRRM Tvj = -40 °C 3300 V
voltage
Tvj = 150 °C 3300
Continuous DC forward IF 825 A
current
Repetitive peak forward IFRM tP = 1 ms 1650 A
current
I2t - value I 2t tP = 10 ms, VR = 0 V Tvj = 125 °C 280 kA²s
Tvj = 150 °C 253
Maximum power PRQM Tvj = 150 °C 2400 kW
dissipation
Minimum turn-on time tonmin 10 µs

Table 6 Characteristic values

Parameter Symbol Note or test condition Values Unit
Min. Typ. Max.
Forward voltage VF IF = 825 A, VGE = 0 V Tvj = 25 °C 2.55 2.95 V
Tvj = 125 °C 2.30
Tvj = 150 °C 2.20 2.50
(table continues...)

Datasheet 5 Revision 1.30

2022-11-22
FZ825R33HE4D
IHM-B module
3 Diode, Inverter

Table 6 (continued) Characteristic values

Parameter Symbol Note or test condition Values Unit
Min. Typ. Max.
Peak reverse recovery IRM VCC = 1800 V, IF = 825 A, Tvj = 25 °C 1180 A
current VGE = -15 V, -diF/dt =
Tvj = 125 °C 1240
4700 A/µs (Tvj = 150 °C)
Tvj = 150 °C 1250
Recovered charge Qr VCC = 1800 V, IF = 825 A, Tvj = 25 °C 430 µC
VGE = -15 V, -diF/dt =
Tvj = 125 °C 830
4700 A/µs (Tvj = 150 °C)
Tvj = 150 °C 970
Reverse recovery energy Erec VCC = 1800 V, IF = 825 A, Tvj = 25 °C 390 mJ
VGE = -15 V, -diF/dt =
Tvj = 125 °C 875
4700 A/µs (Tvj = 150 °C)
Tvj = 150 °C 1050
Thermal resistance, RthJC per diode 25.2 K/kW
junction to case
Thermal resistance, case to RthCH per diode 9.43 K/kW
heat sink
Temperature under Tvj op -40 150 °C
switching conditions

Datasheet 6 Revision 1.30

2022-11-22
FZ825R33HE4D
IHM-B module
4 Characteristics diagrams

4 Characteristics diagrams
Output characteristic (typical), IGBT, Inverter Output characteristic field (typical), IGBT, Inverter
IC = f(VCE) IC = f(VCE)
VGE = 15 V Tvj = 150 °C
1650 1650

1375 1375

1100 1100

825 825

550 550

275 275

0 0
0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0

Transfer characteristic (typical), IGBT, Inverter Switching losses (typical), IGBT, Inverter
IC = f(VGE) E = f(IC)
VCE = 20 V RGoff = 7 Ω, RGon = 0.5 Ω, VCC = 1800 V, VGE = ± 15 V
1650 4800

4200
1375

3600

1100
3000

825 2400

1800
550

1200

275
600

0 0
5 6 7 8 9 10 11 12 13 0 275 550 825 1100 1375 1650

Datasheet 7 Revision 1.30

2022-11-22
FZ825R33HE4D
IHM-B module
4 Characteristics diagrams

Switching losses (typical), IGBT, Inverter Switching times (typical), IGBT, Inverter
E = f(RG) t = f(IC)
IC = 825 A, VCC = 1800 V, VGE = ± 15 V RGoff = 7 Ω, RGon = 0.5 Ω, VCC = 1800 V, VGE = ± 15 V, Tvj = 150
°C
4000 10

3500

3000

1
2500

2000

1500
0.1

1000

500

0 0.01
0 2 4 6 8 10 12 14 16 18 20 0 275 550 825 1100 1375 1650

Switching times (typical), IGBT, Inverter Transient thermal impedance , IGBT, Inverter
t = f(RG) Zth = f(t)
IC = 825 A, VCC = 1800 V, VGE = ± 15 V, Tvj = 150 °C
10 100

10

0.1 0.1
0 2 4 6 8 10 12 14 16 18 20 0.001 0.01 0.1 1 10

Datasheet 8 Revision 1.30

2022-11-22
FZ825R33HE4D
IHM-B module
4 Characteristics diagrams

Reverse bias safe operating area (RBSOA), IGBT, Capacity characteristic (typical), IGBT, Inverter
Inverter C = f(VCE)
IC = f(VCE) f = 1000 kHz, VGE = 0 V, Tvj = 25 °C
RGoff = 7 Ω, VGE = 15 V, Tvj = 150 °C
2200 150

1925

120
1650

1375
90

1100

60
825

550
30

275

0 0
0 500 1000 1500 2000 2500 3000 3500 0.1 1 10 100

Gate charge characteristic (typical), IGBT, Inverter Forward characteristic (typical), Diode, Inverter
VGE = f(QG) IF = f(VF)
IC = 825 A, Tvj = 25 °C
15 1650

12
1375
9

6
1100
3

0 825

-3
550
-6

-9
275
-12

-15 0
0 2 4 6 8 10 12 14 16 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0

Datasheet 9 Revision 1.30

2022-11-22
FZ825R33HE4D
IHM-B module
4 Characteristics diagrams

Switching losses (typical), Diode, Inverter Switching losses (typical), Diode, Inverter
Erec = f(IF) Erec = f(RG)
VCE = 1800 V, RGon = RGon(IGBT) VCE = 1800 V, IF = 825 A
1600 1600

1400 1400

1200 1200

1000 1000

800 800

600 600

400 400

200 200

0 0
0 275 550 825 1100 1375 1650 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0

Transient thermal impedance, Diode, Inverter Safe operating area (SOA), Diode, Inverter
Zth = f(t) IR = f(VR)
Tvj = 150 °C
100 2200

1925

1650

10
1375

1100

825
1

550

275

0.1 0
0.001 0.01 0.1 1 10 0 500 1000 1500 2000 2500 3000 3500

Datasheet 10 Revision 1.30

2022-11-22
FZ825R33HE4D
IHM-B module
5 Circuit diagram

5 Circuit diagram

Figure 1

6 Package outlines

Figure 2

Datasheet 11 Revision 1.30

2022-11-22
FZ825R33HE4D
IHM-B module
7 Module label code

7 Module label code

Module label code

Code format Data Matrix Barcode Code128
Encoding ASCII text Code Set A
Symbol size 16x16 23 digits
Standard IEC24720 and IEC16022 IEC8859-1

Code content Content Digit Example

Module serial number 1–5 71549
Module material number 6 - 11 142846
Production order number 12 - 19 55054991
Date code (production year) 20 – 21 15
Date code (production week) 22 – 23 30
Example

71549142846550549911530 71549142846550549911530

Figure 3

Datasheet 12 Revision 1.30

2022-11-22
FZ825R33HE4D
IHM-B module
Revision history

Revision history
Document revision Date of release Description of changes
0.10 2020-12-17
0.10 2021-01-28
1.10 2021-03-16
1.20 2021-10-15 Final datasheet
1.30 2022-11-22 Final datasheet

Datasheet 13 Revision 1.30

2022-11-22
Trademarks
All referenced product or service names and trademarks are the property of their respective owners.

Edition 2022-11-22 Important notice Please note that this product is not qualified
Published by The information given in this document shall in no according to the AEC Q100 or AEC Q101 documents
event be regarded as a guarantee of conditions or of the Automotive Electronics Council.
Infineon Technologies AG
characteristics (“Beschaffenheitsgarantie”).
81726 Munich, Germany Warnings
With respect to any examples, hints or any typical Due to technical requirements products may contain
values stated herein and/or any information regarding dangerous substances. For information on the types
© 2022 Infineon Technologies AG the application of the product, Infineon Technologies
in question please contact your nearest Infineon
hereby disclaims any and all warranties and liabilities
All Rights Reserved. Technologies office.
of any kind, including without limitation warranties of
non-infringement of intellectual property rights of any Except as otherwise explicitly approved by Infineon
third party. Technologies in a written document signed by
Do you have a question about any
authorized representatives of Infineon Technologies,
aspect of this document? In addition, any information given in this document is
Infineon Technologies’ products may not be used in
Email: [email protected] subject to customer’s compliance with its obligations any applications where a failure of the product or
stated in this document and any applicable legal any consequences of the use thereof can reasonably
requirements, norms and standards concerning be expected to result in personal injury.
Document reference customer’s products and any use of the product of
IFX-AAK420-005 Infineon Technologies in customer’s applications.
The data contained in this document is exclusively
intended for technically trained staff. It is the
responsibility of customer’s technical departments to
evaluate the suitability of the product for the intended
application and the completeness of the product
information given in this document with respect to such
application.