SET B

Bldg 829, Road 1213, Block 712, Salmabad, Kingdom of Bahrain

COLLEGE OF ENGINEERING
_√_1st Tri, 2nd Tri, 3rd Tri, SY 2022-2023
_ _Midterm √ FINAL
ENGG534 ELECTRONICS 1

Hussain mohammed baqer Bh19500927

Sayed mohammed ali BH18500085

LAB REPORT/PRACTICAL
ENGG 534 (Electronics -1)

OBJECTIVE

1. To know the use of the different type components in Electronics lab

2. To understand BJT transfer characteristics
3. To simulate the transfer characteristics of Common emitter BJT characteristics
4. To display the input and output characteristics of BJT.

1) Create two circuits containing BJT components with different power sources and simulate the
input and output of circuit. Also show the input and output characteristic curve (100 marks)

a) Recorded & presented data in graph (25)

b) Analyzed the overall output of simulation (25)
c) Interpret the output and shown result (25)
d) Perform in-group and Submit Report (25)

Rubrics
Criteria -1
20-25 marks: Required data care correctly and properly recorded presented in table, chart & graph
15-20 marks: Partially correct data & presentation in table chart & graph
0 – 15 marks: incorrect presentation in table, chart & graph
Criteria -2
20-25 marks: Completely analyzed the overall output of simulation and completely answer guided Question
given
15-20 marks: Partially correct output of simulation
0 – 15 marks: incorrect output of simulation
Criteria -3
20-25 marks: Completely Interpret the output and shown result 15-20 marks: Partially correct the interpret the
output

1
 SET B

Bldg 829, Road 1213, Block 712, Salmabad, Kingdom of Bahrain

COLLEGE OF ENGINEERING
_√_1st Tri, 2nd Tri, 3rd Tri, SY 2022-2023
_ _Midterm √ FINAL
ENGG534 ELECTRONICS 1

0 – 15 marks: incorrect interpret the output and not shown result

Criteria -4
20-25 marks: Perform in group and report completely correct
15-20 marks: Partially correct report
0 – 15 marks: incorrect report

2
 SET B

Bldg 829, Road 1213, Block 712, Salmabad, Kingdom of Bahrain

COLLEGE OF ENGINEERING
_√_1st Tri, 2nd Tri, 3rd Tri, SY 2022-2023
_ _Midterm √ FINAL
ENGG534 ELECTRONICS 1

Bipolar Transistor
Unlike semiconductor diodes which are made up from two pieces of semiconductor material to form
one simple pn-junction. The bipolar transistor uses one more layer of semiconductor material to
produce a device with properties and characteristics of an amplfier.

If we join together two individual signal diodes back-to-back, this will give us two PN-junctions
connected together in series which would share a common Positve, (P) or Negative, (N) terminal. The
fusion of these two diodes produces a three layer, two junction, three terminal device forming the basis
of a Bipolar Junction Transistor, or BJT for short.

Transistors are three terminal active devices made from different semiconductor materials that can act
as either an insulator or a conductor by the application of a small signal voltage. The transistor’s ability
to change between these two states enables it to have two basic functions: “switching” (digital
electronics) or “amplification” (analogue electronics). Then bipolar transistors have the ability to
operate within three different regions:

In the early days of electronics, their mechanism of functioning was described by the two terms
Transfer Varistor, which were later combined to form the word Transistor. PNP and NPN refer to the
atomic arrangement of the P-type and N-type semiconductor materials used to build the two kinds of
fundamental bipolar transistors.
3
 SET B

Bldg 829, Road 1213, Block 712, Salmabad, Kingdom of Bahrain

COLLEGE OF ENGINEERING
_√_1st Tri, 2nd Tri, 3rd Tri, SY 2022-2023
_ _Midterm √ FINAL
ENGG534 ELECTRONICS 1

Each of the three connecting terminals of a bipolar transistor is given a unique name to distinguish it
from the other two. This fundamental structure is made possible by two PN-junctions. The Emitter (E),
the Base (B), and the Collector (C) are the names given to these three connectors.

Like a current-controlled switch, a bipolar transistor regulates the current flowing through it from the
Emitter to the Collector terminals in response to the biasing voltage provided to its base terminal. The
fundamental principle of transistor operation is that a very modest current running through the base
terminal may modulate a significantly greater current via the collector terminal

Both PNP and NPN transistors work on the same fundamental concept; what sets them apart is the
biasing and power supply polarity.

4
 SET B

Bldg 829, Road 1213, Block 712, Salmabad, Kingdom of Bahrain

COLLEGE OF ENGINEERING
_√_1st Tri, 2nd Tri, 3rd Tri, SY 2022-2023
_ _Midterm √ FINAL
ENGG534 ELECTRONICS 1

In both the PNP and NPN bipolar transistor construction and circuit symbols given above, the arrow in
the circuit symbol always indicates the direction of "conventional current flow" between the base
terminal and the emitter terminal. Both kinds of transistors use the conventional diode symbol, in which
the arrow always points from the positive P-type area to the negative N-type region.

Transistor Bipolar Arrangements

The Bipolar Transistor is a three-terminal component, therefore it may be connected to an electrical

circuit in one of three ways, with one terminal serving as a common connection for the input and output
signals in all cases. Since the transistor's static properties change depending on the circuit layout, the way
in which it responds to an input signal varies depending on how it is connected.

The CB-Configuration, or Common Base

The input and output signals share a common BASE connection in a Common Base, or grounded base,
setup. An input signal is fed into the transistor's base and emitter terminals, and an output signal is drawn
from the base and collector terminals, as shown. As the name implies, the base terminal is either linked
directly to ground or to a stable voltage source.

Since the total base and collector currents flow into the emitter, the collector current output must be
smaller than the emitter current input, giving in a current gain for this sort of circuit of 1 (unity) or less.
This "attenuates" the input signal.

5
 SET B

Bldg 829, Road 1213, Block 712, Salmabad, Kingdom of Bahrain

COLLEGE OF ENGINEERING
_√_1st Tri, 2nd Tri, 3rd Tri, SY 2022-2023
_ _Midterm √ FINAL
ENGG534 ELECTRONICS 1
The Common Base Transistor Circuit

The signal voltages Vin and Vout are "in-phase," making this amplifier design a non-inverting voltage
amplifier circuit. Because of the high voltage gain characteristics of this transistor configuration, it is
not often used. It has the input properties of a forward biased diode and the output characteristics of a
photo-diode under illumination.

Additionally, the "Resistance Gain" of this particular bipolar transistor design is rather high since the
load resistance (RL) is much less than the input resistance (Rin). Consequently, the voltage gain ( Av )
for a standard grounding arrangement is as follows:

Common Base Voltage Gain

In this equation, Ic/Ie represents the current gain, alpha ( ) represents the resistance gain, and RL/Rin
represents the inductance gain.

Due to its excellent high frequency response, the common base circuit is often exclusively used in
single stage amplifier circuits like microphone pre-amplifiers or radio frequency (R) amplifiers.

The Common Emitter (CE) Configuration

In the Common Emitter or grounded emitter configuration, the input signal is applied between the base
and the emitter, while the output is taken from between the collector and the emitter as shown. This type

6
 SET B

Bldg 829, Road 1213, Block 712, Salmabad, Kingdom of Bahrain

COLLEGE OF ENGINEERING
_√_1st Tri, 2nd Tri, 3rd Tri, SY 2022-2023
_ _Midterm √ FINAL
ENGG534 ELECTRONICS 1
of configuration is the most commonly used circuit for transistor based amplifiers and which represents
the “normal” method of bipolar transistor connection.

The common emitter amplifier configuration produces the highest current and power gain of all the
three bipolar transistor configurations. This is mainly because the input impedance is LOW as it is
connected to a forward biased PN-junction, while the output impedance is HIGH as it is taken from a
reverse biased PN-junction.

The Common Emitter Amplifier Circuit

In this type of configuration, the current flowing out of the transistor must be equal to the currents
flowing into the transistor as the emitter current is given as Ie = Ic + Ib.

As the load resistance ( RL ) is connected in series with the collector, the current gain of the common
emitter transistor configuration is quite large as it is the ratio of Ic/Ib. A transistors current gain is given
the Greek symbol of Beta, ( β ).

As the emitter current for a common emitter configuration is defined as Ie = Ic + Ib, the ratio of Ic/Ie is
called Alpha, given the Greek symbol of α. Note: that the value of Alpha will always be less than unity.

Since the electrical relationship between these three currents, Ib, Ic and Ie is determined by the physical
construction of the transistor itself, any small change in the base current ( Ib ), will result in a much
larger change in the collector current ( Ic ).
7
 SET B

Bldg 829, Road 1213, Block 712, Salmabad, Kingdom of Bahrain

COLLEGE OF ENGINEERING
_√_1st Tri, 2nd Tri, 3rd Tri, SY 2022-2023
_ _Midterm √ FINAL
ENGG534 ELECTRONICS 1
Then, small changes in current flowing in the base will thus control the current in the emitter-collector
circuit. Typically, Beta has a value between 20 and 200 for most general purpose transistors. So if a
transistor has a Beta value of say 100, then one electron will flow from the base terminal for every 100
electrons flowing between the emitter-collector terminal.

By combining the expressions for both Alpha, α and Beta, β the mathematical relationship between
these parameters and therefore the current gain of the transistor can be given as:

Where: “Ic” is the current flowing into the collector terminal, “Ib” is the current flowing into the base
terminal and “Ie” is the current flowing out of the emitter terminal.

Then to summarise a little. This type of bipolar transistor configuration has a greater input impedance,
current and power gain than that of the common base configuration but its voltage gain is much lower.
The common emitter configuration is an inverting amplifier circuit. This means that the resulting output
signal has a 180o phase-shift with regards to the input voltage signal.

The Common Collector (CC) Configuration

In the Common Collector or grounded collector configuration, the collector is connected to ground
through the supply, thus the collector terminal is common to both the input and the output. The input
signal is connected directly to the base terminal, while the output signal is taken from across the emitter
load resistor as shown. This type of configuration is commonly known as a Voltage Follower or Emitter
Follower circuit.
8
 SET B

Bldg 829, Road 1213, Block 712, Salmabad, Kingdom of Bahrain

COLLEGE OF ENGINEERING
_√_1st Tri, 2nd Tri, 3rd Tri, SY 2022-2023
_ _Midterm √ FINAL
ENGG534 ELECTRONICS 1
The common collector, or emitter follower configuration is very useful for impedance matching
applications because of its very high input impedance, in the region of hundreds of thousands of Ohms
while having a relatively low output impedance.

The Common Collector Transistor Circuit

The common emitter configuration has a current gain approximately equal to the β value of the
transistor itself. However in the common collector configuration, the load resistance is connected in
series with the emitter terminal so its current is equal to that of the emitter current.

As the emitter current is the combination of the collector AND the base current combined, the load
resistance in this type of transistor configuration also has both the collector current and the input current
of the base flowing through it. Then the current gain of the circuit is given as:

9
 SET B

Bldg 829, Road 1213, Block 712, Salmabad, Kingdom of Bahrain

COLLEGE OF ENGINEERING
_√_1st Tri, 2nd Tri, 3rd Tri, SY 2022-2023
_ _Midterm √ FINAL
ENGG534 ELECTRONICS 1
The Common Collector Current Gain

This type of bipolar transistor configuration is a non-inverting circuit in that the signal voltages
of Vin and Vout are “in-phase”. The common collector configuration has a voltage gain of about “1”
(unity gain). Thus it can considered as a voltage-buffer since the voltage gain is unity.

The load resistance of the common collector transistor receives both the base and
collector currents giving a large current gain (as with the common emitter
configuration) therefore, providing good current amplification with very little voltage
gain.
Having looked at the three different types of bipolar transistor configurations, we
can now summaries the various relationships between the transistors individual DC
currents flowing through each leg and its DC current gains given above in the
following table.

1
0