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Course Spec See 6201

This 3 credit hour course provides students with an advanced understanding of semiconductor device physics and transport mechanisms. The course introduces concepts of solid state physics, crystallography, and carrier transport. Students will learn to draw band diagrams of device structures, include the effects of bias, solve transport problems using continuity equations, and apply the Poisson equation. The course will also cover PN junctions, bipolar junction transistors, and metal semiconductor contacts. Recommended textbooks are listed and a week-by-week lecture plan is provided covering topics such as doping, band structures, carrier properties, diffusion, generation and recombination, and MOS devices.

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68 views

Course Spec See 6201

This 3 credit hour course provides students with an advanced understanding of semiconductor device physics and transport mechanisms. The course introduces concepts of solid state physics, crystallography, and carrier transport. Students will learn to draw band diagrams of device structures, include the effects of bias, solve transport problems using continuity equations, and apply the Poisson equation. The course will also cover PN junctions, bipolar junction transistors, and metal semiconductor contacts. Recommended textbooks are listed and a week-by-week lecture plan is provided covering topics such as doping, band structures, carrier properties, diffusion, generation and recombination, and MOS devices.

Uploaded by

muhammad_pasta
Copyright
© Attribution Non-Commercial (BY-NC)
We take content rights seriously. If you suspect this is your content, claim it here.
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Course Title: Advanced Fundamentals of Semiconductors Course Code: EE-6201 Credit Hours: 3 Pre-requisite: First course of Physics at University-level.

Students should have strong background of basic electronics. Aims & Objectives: The understanding of electronic device characteristics and their performance in a circuit depend on their underlying physics. To fully understand and appreciate their working principles, it is imperative to study these devices from carrier transport perspective giving deeper and more insightful picture of their terminal characteristics. This course introduces basic concepts of solid state physics, crystallography and fundamentals of carrier transport mechanisms in semiconductor devices. Students who have attained the knowledge as per the course contents should be able to: Draw band diagrams at thermodynamic equilibrium of simple device structures including Fermi level in different regions of the device based on doping etc. Include the effect of biasing on the band diagram Workout simple transport problems using Continuity Equation based on boundary conditions. Apply Poisson Equation and solve the Electrostatic problem of PN junctions Derive transport equations of the BJT under certain simplifications like lowlevel injection and depletion approximation. Detailed Course Contents: See the attached Lecture plan. Recommended Books: 1. B. Streetman. Solid State Electronic Devices. 5th or later edition 2. R. F. Pierret. Semiconductor Device Fundamentals. 2nd or later edition 3. S.M. Sze. Semiconductor Devices: Physics and Technology. 2nd or later edition

Semiconductor Device Fundamentals (EE501) Week-wise tentative lecture plan

week

Contents General material properties, crystal structure, crystallographic notation, cubic lattices ( SC, BCC, FCC,Zinc Blende), electrons and holes, fundamentals of band model Band gap energy, Density of states, Doping Energy band model ( some elaboration), Thermal equilibrium, Fermi-Dirac distribution, Boltzmann approximation, Relationship between EF and n, p Intrinsic Fermi level, Determination of EF, Degenerately doped semiconductor, Carrier properties, Carrier drift Carrier scattering mechanisms, Drift current, Conductivity and resistivity, Relationship between band diagrams and potential and electric field profile Carrier diffusion, Diffusion current, Einstein relationship, Generation and recombination, Excess carrier concentration, Minority carrier lifetime Continuity equations, Minority carrier diffusion equations, Minority carrier diffusion length, Quasi-Fermi levels, Work function Metal-Semiconductor Contactstheir types and equilibrium energy-band diagram. Poissons Equation, PN junction Electrostatics and I-V characteristics The Bipolar Junction Transistor Fundamentals Ideal Transistor Analysis The Bipolar Junction Transistor Ideal Transistor Analysis Ebers-Moll model BJT: Deviations from the Ideal Base-width modulation, Early voltage Punch-through Non-ideal effects at low |VEB|, high |VEB| Gummel plot MOS Capacitor structure and its electrostatics, MOSFET structure and operations MOSFET qualitative theory and long channel approximation, limitations of long channel approximation, bulk charge theory, body effect parameter. Small signal parameter Revision and/or introduction to advanced concepts

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