STF15NM65N,STFI15NM65N

N-channel 650 V, 0.35 Ω typ., 12 A MDmesh™ II Power MOSFETs

in TO-220FP and I²PAKFP packages
Datasheet - production data

Features
Order code VDSS @Tjmax RDS(on) max. ID

3
STF15NM65N
1
2 710 V 0.38 Ω 12 A
STFI15NM65N
TO-220FP 1
2
3

2
• 100% avalanche tested
I PAKFP
(TO-281) • Low input capacitance and gate charge
• Low gate input resistance

Applications
• Switching applications
Figure 1. Internal schematic diagram
Description
' These devices are N-channel Power MOSFETs
developed using the second generation of
MDmesh™ technology. This revolutionary Power
MOSFETs associates a vertical structure to the
company’s strip layout to yield one of the world’s
* lowest on-resistance and gate charge. It is
therefore suitable for the most demanding high
efficiency converters.
6

$0Y

Table 1. Device summary

Order code Marking Packages Packing

STF15NM65N TO-220FP
15NM65N Tube
STFI15NM65N I2PAKFP (TO-281)

July 2016 DocID13853 Rev 4 1/15

This is information on a product in full production. www.st.com
Contents STF15NM65N, STFI15NM65N

Contents

1 Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3

2 Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4
2.1 Electrical characteristics (curves) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6

3 Test circuits ............................................... 8

4 Package information . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9
4.1 TO-220FP package information . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10
4.2 I2PAKFP (TO-281) package information . . . . . . . . . . . . . . . . . . . . . . . . . 12

5 Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14

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STF15NM65N, STFI15NM65N Electrical ratings

1 Electrical ratings

Table 2. Absolute maximum ratings

Value
Symbol Parameter Unit
TO-220FP I2PAKFP

VDS Drain source voltage 650 V

VGS Gate source voltage ± 25 V
ID Drain current continuous Tc = 25 °C 12(1) A
ID Drain current continuous Tc = 100 °C 7.56 A
IDM(2) Drain current pulsed 48 A
PTOT Total dissipation at Tc = 25 °C 30 W
dv/dt(3) Peak diode recovery voltage slope 15 V/ns
Insulation withstand voltage (RMS
from all three leads to external
VISO 2500 V
heatsink
(t = 1 s; TC = 25 °C)
TJ Operating junction temperature range
-55 to 150 °C
Tstg Storage temperature range
1. Limited by maximum junction temperature.
2. Pulse width limited by safe operating area.
3. ISD ≤12 A, di/dt ≤ 400 A/μs, VDSpeak ≤ V(BR)DSS, VDD = 80 % V(BR)DSS

Table 3. Thermal data

Value
Symbol Parameters Unit
TO-220FP I2PAKFP

Rthjc Thermal resistance junction-case 4.17 °C/W

Rthj-amb Thermal resistance junction-ambient 62.5 °C/W

Table 4. Avalanche characteristics

Symbol Parameters Value Unit

Avalanche current, repetitive or not-

IAS 3 A
repetitive (pulse width limited by Tjmax)
Single pulse avalanche energy
EAS 187 mJ
(starting TJ = 25 °C, ID = IAR, VDD = 50 V)

DocID13853 Rev 4 3/15

15
Electrical characteristics STF15NM65N, STFI15NM65N

2 Electrical characteristics

(TCASE = 25 °C unless otherwise specified).

Table 5. On/off states

Symbol Parameter Test conditions Min. Typ. Max. Unit

V(BR)DSS Drain-source breakdown voltage VGS = 0, ID = 1 mA 650 V

VDD = 650 V, VGS=0 1 µA
lDSS Zero gate voltage drain current VDD = 650 V, VGS = 0
100 µA
TC = 125 °C(1)
lGSS Gate body leakage VGS= ±25 V, VDS = 0 V ±100 nA
VGS(th) Gate threshold voltage ID= 250 µA, VGS =VDS 2 3 4 V
Static drain-source on-
RDS(on) ID= 6 A, VGS= 10V 0.35 0.38 Ω
resistance
1. Defined by design, not subject to production test

Table 6. Dynamic
Symbol Parameter Test conditions Min. Typ. Ma. Unit

Ciss Input capacitance - 983 - pF

VDS= 50 V, f = 1MHz,
Coss Output capacitance - 57 - pF
VGS= 0 V
Crss Reverse capacitance - 4.5 - pF
Equivalent output.
Cosseq (1) VDS = 0 V to 520 V, VGS = 0 V - 146 - pF
capacitance
Rg Intrinsic gate resistance f = 1MHz ID = 0 A - 4.6 - Ω
Qg Total gate charge - 33.3 - nC
VDD= 520 V, ID=12 A,
Qgs Gate source charge VGS= 10 V (see Figure 13: - 5.7 - nC
Gate charge test circuit)
Qgd Gate-drain charge - 17 - nC
1. Cross eq: defined as a constant equivalent capacitance giving the same charging time as COSS when V DS
increases from 0 to 80 % VDSS.

Table 7. Switching times

Symbol Parameter Test conditions Min. Typ. Max. Unit

td(on) Turn-on delay time VDD= 325 V, ID = 6 A - 55.5 - ns

tr Rise time Rg= 4.7 Ω, VGS = 10 V(see - 8.5 - ns
Figure 12: Switching times
td(off) Turn-off-delay time test circuit for resistive - 14 - ns
load and Figure 17:
tf Fall time Switching time waveform) - 11.4 - ns

4/15 DocID13853 Rev 4

STF15NM65N, STFI15NM65N Electrical characteristics

Table 8. Source drain diode

Symbol Parameter Test conditions Min. Typ. Max. Unit

ISD Source drain current - 12 A

Source drain current
ISDM(1) - 48 A
(pulsed)
VSD(2) Forward on voltage ISD = 12 A, VGS = 0 V - 1.6 V
trr Reverse recovery time - 428 ns
ISD = 12 A, di/dt = 100 A/µs
Reverse recovery VDD = 60 V(see Figure 14:
Qrr - 4.7 µC
charge Test circuit for inductive
load switching and diode
Reverse recovery
IRRM recovery times) - 21.5 A
current
trr Reverse recovery time - 570 ns
ISD= 12 A, di/dt = 100 A/µs
Reverse recovery VDD = 60 V, Tj = 150 °C
Qrr - 6.2 µC
charge (see Figure 14: Test circuit
for inductive load switching
Reverse recovery
IRRM and diode recovery times) - 22 A
current
1. Pulse width limited by safe operating area.
2. Pulsed: pulse duration = 300 µs, duty cycle 1.5 %

DocID13853 Rev 4 5/15

15
Electrical characteristics STF15NM65N, STFI15NM65N

2.1 Electrical characteristics (curves)

Figure 2. Safe operating area Figure 3. Thermal impedance

AM10307v1
ID
(A)

is
10 ea )
ar S(on
s 10µs
hi
t R
D
in x
n ma
io
r at by 100µs
pe ed
O mit
1 Li 1ms

Tj=150°C 10ms
Tc=25°C
0.1 Single pulse

0.01
0.1 1 10 100 VDS(V)

Figure 4. Output characteristics Figure 5. Transfer characteristics

AM10308v1 AM10309v1
ID ID
(A) VGS=10V (A)
VDS=19V
25 25
6V
20 20

15 15

10 10
5V

5 5

0 0
0 2 4 6 8 10 12 14 16 18 20 22 VDS(V) 0 2 4 6 8 10 VGS(V)

Figure 6. Static drain-source on-resistance Figure 7. Gate charge vs gate-source voltage

AM10311v1
9*6 *,3'49* 9'6
RDS(on) 9 9
(Ω) 9'6 9'' 9
0.365 VGS=10V  ,' $ 
0.360 

0.355

0.350 

0.345

0.340 

0.335  

0.330
0 2 4 6 8 10 12 ID(A)  
        4JQ&

6/15 DocID13853 Rev 4

STF15NM65N, STFI15NM65N Electrical characteristics

Figure 8. Capacitance variations Figure 9. Normalized gate threshold voltage vs

C AM10313v1 temperature
(pF) VGS(th) AM10314v1
(norm)

1.10 ID=250µA
1000 Ciss

1.00
100

Coss 0.90
10

Crss 0.80

1
0.1 1 10 100 VDS(V)
0.70
-50 -25 0 25 50 75 100 TJ(°C)

Figure 10. Normalized on-resistance vs temp. Source-drain diode forward characteristics

AM10315v1 AM10316v1
RDS(on) VSD
(norm)
(V)
2.1 1.4 TJ=-50°C
ID=6A
1.9
1.2
1.7 TJ=25°C
1.0
1.5
0.8 TJ=150°C
1.3
0.6
1.1

0.9 0.4

0.7 0.2

0.5 0
-50 -25 0 25 50 75 100 TJ(°C) 0 2 4 6 8 10 12 ISD(A)

Figure 11. Normalized VDS vs temperature

AM09028v1
VDS
(norm)
ID=1mA
1.10

1.08
1.06

1.04
1.02
1.00
0.98
0.96
0.94
0.92
-50 -25 0 25 50 75 100 TJ(°C)

DocID13853 Rev 4 7/15

15
Test circuits STF15NM65N, STFI15NM65N

3 Test circuits

Figure 12. Switching times test circuit for Figure 13. Gate charge test circuit
resistive load
VDD

12V 47kΩ
1kΩ
100nF
RL 2200 3.3
μF μF
VDD IG=CONST
VD Vi=20V=VGMAX 100Ω D.U.T.
VGS 2200
RG D.U.T. μF 2.7kΩ VG

PW
47kΩ

PW 1kΩ
AM01468v1 AM01469v1

Figure 14. Test circuit for inductive load Figure 15. Unclamped inductive load test circuit
switching and diode recovery times

L
A A A
D
FAST L=100μH VD
G D.U.T. DIODE 2200 3.3
μF μF VDD
S B 3.3 1000
B B μF μF
25 Ω VDD ID
D

RG S
Vi D.U.T.

Pw
AM01470v1 AM01471v1

Figure 16. Unclamped inductive waveform Figure 17. Switching time waveform
V(BR)DSS ton toff
tr tdoff tf
VD tdon

90% 90%
IDM
10%
ID 10% VDS
0

VDD VDD 90%

VGS

AM01472v1 0 10% AM01473v1

8/15 DocID13853 Rev 4

STF15NM65N, STFI15NM65N Package information

4 Package information

In order to meet environmental requirements, ST offers these devices in different grades of

ECOPACK® packages, depending on their level of environmental compliance. ECOPACK®
specifications, grade definitions and product status are available at: www.st.com.
ECOPACK® is an ST trademark.

DocID13853 Rev 4 9/15

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Package information STF15NM65N, STFI15NM65N

4.1 TO-220FP package information

Figure 18. TO-220FP package outline

7012510_Rev_K_B

10/15 DocID13853 Rev 4

STF15NM65N, STFI15NM65N Package information

Table 9. TO-220FP package mechanical data

mm
Dim.
Min. Typ. Max.

A 4.4 4.6
B 2.5 2.7
D 2.5 2.75
E 0.45 0.7
F 0.75 1
F1 1.15 1.70
F2 1.15 1.70
G 4.95 5.2
G1 2.4 2.7
H 10 10.4
L2 16
L3 28.6 30.6
L4 9.8 10.6
L5 2.9 3.6
L6 15.9 16.4
L7 9 9.3
Dia 3 3.2

DocID13853 Rev 4 11/15

15
Package information STF15NM65N, STFI15NM65N

4.2 I2PAKFP (TO-281) package information

Figure 19. I2PAKFP (TO-281) package outline

5HY&

12/15 DocID13853 Rev 4

STF15NM65N, STFI15NM65N Package information

Table 10. I2PAKFP (TO-281) package mechanical data

mm
Dim.
Min. Typ. Max.

A 4.40 4.60
B 2.50 2.70
D 2.50 2.75
D1 0.65 0.85
E 0.45 0.70
F 0.75 1.00
F1 1.20
G 4.95 5.20
H 10.00 10.40
L1 21.00 23.00
L2 13.20 14.10
L3 10.55 10.85
L4 2.70 3.20
L5 0.85 1.25
L6 7.50 7.60 7.70

DocID13853 Rev 4 13/15

15
Revision history STF15NM65N, STFI15NM65N

5 Revision history

Table 11. Document revision history

Date Revision Changes

11-May-2011 1 Initial release.

Document status promoted form preliminary data to datasheet,
21-Jun-2011 2
added Section 2.1: Electrical characteristics (curves).
– Added: I2PAKFP package
– Added: Table 10 and Figure 22
17-Jul-2013 3
– Updated: Section 4: Package information
– Minor text changes.
The part number STP15NM65N has been moved to a separate
25-Jul-2016 4 datasheet.
Minor text changes.

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STF15NM65N, STFI15NM65N

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DocID13853 Rev 4 15/15

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