CEP02N6/CEB02N6

ELECTRICAL CHARACTERISTICS (TC=25 C unless otherwise noted)

4
Parameter Symbol Condition Min Typ Max Unit
DYNAMIC CHARACTERISTICS b
Input Capacitance CISS 250 PF
VDS =25V, VGS = 0V
Output Capacitance COSS 50 PF
f =1.0MHZ
Reverse Transfer Capacitance CRSS 4 30 PF
a
DRAIN-SOURCE DIODE CHARACTERISTICS
Diode Forward Voltage VSD VGS = 0V, Is =2A 1.5 V

Notes
a.Pulse Test:Pulse Widthś 300ijs, Duty Cycle ś 2%.
b.Guaranteed by design, not subject to production testing.
c. L=60mH, IAS=2.0A, VDD=50V, RG=25Ω , Starting TJ=25 C

3.0
VGS=10,9,8,7V
2.5
ID, Drain Current(A)

ID, Drain Current (A)

2.0
150 C
1
1.5
VGS=6V

1.0
VGS=5V -55 C
0.5 1.VDS=40V
2.Pulse Test
25 C
0 0.1
0 2 4 6 8 10 12 2 4 6 8 10
VDS, Drain-to-Source Voltage (V) VGS, Gate-to-Source Voltage (V)
Figure 1. Output Characteristics Figure 2. Transfer Characteristics

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 CEP02N6/CEB02N6
600 2.2

RDS(ON), On-Resistance(Ohms)
ID=1A
VGS=10V
500 1.9

RDS(ON), Normalized
4
C, Capacitance (pF)

400 1.6
Ciss
300 1.3

200 1.0
Coss
100 0.7
Crss
0 0.4
0 5 10 15 20 25 -100 -50 0 50 100 150 200

VDS, Drain-to Source Voltage (V) TJ, Junction Temperature( C)

Figure 3. Capacitance Figure 4. On-Resistance Variation with

Temperature
1.30 1.15
Drain-Source Breakdown Voltage
Gate-Source Threshold Voltage

VDS=VGS ID=250ӴA
1.20 1.10
ID=250ӴA
BVDSS, Normalized

1.10 1.05
Vth, Normalized

1.00 1.00
0.90
0.95
0.80
0.90
0.70
0.60 0.85
-50 -25 0 25 50 75 100 125 150 -50 -25 0 25 50 75 100 125 150

Tj, Junction Temperature ( C) Tj, Junction Temperature ( C)

Figure 5. Gate Threshold Variation Figure 6. Breakdown Voltage Variation

with Temperature with Temperature

4 20
10 VGS=0V
VDS=50V
gFS, Transconductance (S)

Is, Source-drain current (A)

2
1

0 0.1
0 1 2 3 4 0.4 0.6 0.8 1.0 1.2

IDS, Drain-Source Current (A) VSD, Body Diode Forward Voltage (V)
Figure 7. Transconductance Variation Figure 8. Body Diode Forward Voltage
with Drain Current Variation with Source Current

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 CEP02N6/CEB02N6
15 10
VGS, Gate to Source Voltage (V)

VDS=480V
ID=2A 10
12 1m ijs
4

ID, Drain Current (A)

t s
Li mi 10
1 N) m
s
9 DS
(O
R

D
C
6
0.1
3
TC=25C
Tj=25 C
0 Single Pulse
0.01
0 6 12 18 24 1 10 100 500 1000

Qg, Total Gate Charge (nC) VDS, Drain-Source Voltage (V)

Figure 9. Gate Charge Figure 10. Maximum Safe
Operating Area

VDD
t on toff
RL td(on) tr td(off) tf
V IN 90%
90%
D VOUT
VGS VOUT 10% INVERTED 10%
RGEN G
90%
50% 50%
S VIN
10%

PULSE WIDTH

Figure 11. Switching Test Circuit Figure 12. Switching Waveforms

1
Transient Thermal Impedance

D=0.5
r(t),Normalized Effective

0.2

0.1
0.1 PDM
0.05
t1
0.02 t2

1. RįJC (t)=r (t) * RįJC

0.01
Single Pulse 2. RįJC=See Datasheet
3. TJM-TC = P* RįJC (t)
4. Duty Cycle, D=t1/t2
0.01
0.01 0.1 1 10 100 1000 10000

Square Wave Pulse Duration (msec)

Figure 13. Normalized Thermal Transient Impedance Curve

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