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by MJ10012/D
SEMICONDUCTOR TECHNICAL DATA


    


10 AMPERE
The MJ10012 and MJH10012 are high–voltage, high–current Darlington transistors
POWER TRANSISTORS
designed for automotive ignition, switching regulator and motor control applications.
DARLINGTON NPN
• Collector–Emitter Sustaining Voltage — SILICON
VCEO(sus) = 400 Vdc (Min) COLLECTOR
400 VOLTS
• 175 Watts Capability at 50 Volts 175 AND 118 WATTS
• Automotive Functional Tests

BASE

≈1k ≈ 30

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ EMITTER

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎ ÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
MAXIMUM RATINGS

ÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
CASE 1–07
Rating Symbol MJ10012 MJH10012 Unit TO–204AA

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
(TO–3)
Collector–Emitter Voltage VCEO 400 Vdc MJ10012

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
Collector–Emitter Voltage VCER 550 Vdc

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
(RBE = 27 Ω)

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
Collector–Base Voltage VCBO 600 Vdc

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
Emitter–Base Voltage VEBO 8.0 Vdc

ÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
Collector Current — Continuous IC 10 Adc

ÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
— Peak (1) 15

ÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
Base Current IB 2.0 Adc

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
Total Power Dissipation PD
@ TC = 25_C 175 118 Watts

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
@ TC = 100_C 100 47.5 Watts

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
Derate above 25_C 1.0 1.05 W/_C

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎ
Operating and Storage Junction TJ, Tstg – 65 to + 200 – 55 to + 150 _C
Temperature Range

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
THERMAL CHARACTERISTICS

ÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
Characteristic Symbol Max Unit

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
Thermal Resistance, Junction to Case RθJC 1.0 0.95 _C/W CASE 340D–01
TO–218 TYPE

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
Maximum Lead Temperature for TL 275 275 _C MJH10012
Soldering Purposes: 1/8″ from

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
v ÎÎÎÎÎÎÎÎÎÎÎÎ
Case for 5 Seconds
(1) Pulse Test: Pulse Width = 5.0 ms, Duty Cycle 10%.

REV 2

 Motorola, Inc. 1995 1

Motorola Bipolar Power Transistor Device Data
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
 

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ELECTRICAL CHARACTERISTICS (TC = 25_C unless otherwise noted)

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
Characteristic Symbol Min Typ Max Unit

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
OFF CHARACTERISTICS (1)
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
Collector–Emitter Sustaining Voltage (Figure 1) VCEO(sus) 400 — — Vdc

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
(IC = 200 mAdc, IB = 0, Vclamp = Rated VCEO)

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
Collector–Emitter Sustaining Voltage (Figure 1) VCER(sus) 425 — — Vdc

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
(IC = 200 mAdc, RBE = 27 Ohms, Vclamp = Rated VCER)

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
Collector Cutoff Current (Rated VCER, RBE = 27 Ohms) ICER — — 1.0 mAdc

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
Collector Cutoff Current (Rated VCBO, IE = 0) ICBO — — 1.0 mAdc

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
Emitter Cutoff Current (VEB = 6.0 Vdc, IC = 0) IEBO — — 40 mAdc

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ON CHARACTERISTICS (1)

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
DC Current Gain hFE —
(IC = 3.0 Adc, VCE = 6 0 Vdc) 300 550 —

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
(IC = 6.0 Adc, VCE = 6.0 Vdc) 100 350 2000

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
(IC = 10 Adc, VCE = 6.0 Vdc) 20 150 —

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
Collector–Emitter Saturation Voltage VCE(sat) Vdc
(IC = 3.0 Adc, IB = 0.6 Adc) — — 15

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
(IC = 6.0 Adc, IB = 0.6 Adc) — — 2.0

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
(IC = 10 Adc, IB = 2.0 Adc) — — 2.5

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
Base Emitter Saturation Voltage VBE(sat) Vdc
(IC = 6.0 Adc, IB = 0.6 Adc)

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
— — 2.5
(IC = 10 Adc, IB = 2.0 Adc) — — 3.0

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
Base Emitter On Voltage (IC = 10 Adc, VCE = 6.0 Vdc) VBE(on) — — 2.8 Vdc

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
Diode Forward Voltage (IF = 10 Adc) Vf — 2.0 3.5 Vdc

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
DYNAMIC CHARACTERISTICS
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
Output Capacitance (VCB = 10 Vdc, IE = 0, ftest = 100 kHz) Cob — 165 350 pF

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
SWITCHING CHARACTERISTICS

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
Storage Time
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
(VCC = 12 Vdc, IC = 6.0 Adc, ts — 75 15 µs

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
Fall Time
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
IB1 = IB2 = 0.3 Adc) Figure 2 tf — 5.2 15 µs

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
FUNCTIONAL TESTS
ÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎ
Second Breakdown Collector Current with
ÎÎÎ IS/B See Figure 10 —

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎ
Base–Forward Biased

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
Pulsed Energy Test (See Figure 12) IC2L/2 — — 180 mJ
(1) Pulse Test: Pulse Width = 300 µs, Duty Cycle = 2%.

VCC = 20 Vdc
[
VCC 14 V
ADJUST UNTIL IC = 6 A
10 V L = 10 mH 25 µs
0V
t1 * [ 12 V 2Ω
0
[ 12 V
5 ms 100
1N4933 225 µs
220 En Eo
2N3713 Vclamp T.U.T.

51 1N3947
VCEO VCER
–4V
27 Vclamp
VCEO(sus) = 400 Vdc
VCER(sus) = 425 Vdc
* Adjust t1 such that IC reaches 200 mA at VCE = Vclamp

Figure 1. Sustaining Voltage Figure 2. Switching Times

Test Circuit Test Circuit

2 Motorola Bipolar Power Transistor Device Data

  

VCE , COLLECTOR–EMITTER VOLTAGE (VOLTS)

2000 3
TJ = 150°C TJ = 25°C
1000
2.5
700
hFE, DC CURRENT GAIN

500 25°C
300 2
200 10 A
30°C 1.5
100 IC = 0.5 A 3 6
70
50 VCE = 3 Vdc 1
VCE = 6 Vdc
30
20 0.5
0.1 0.2 0.3 0.5 0.7 1 2 3 5 7 10 0.002 0.005 0.01 0.02 0.05 0.1 0.2 0.5 1 2
IC, COLLECTOR CURRENT (AMP) IB, BASE CURRENT (AMP)
Figure 3. DC Current Gain Figure 4. Collector Saturation Region
VCE(sat), COLLECTOR–EMITTER SATURATION

2.2 2.8
VBE(sat) @ IC/IB = 5

VBE, BASE–EMITTER VOLTAGE (VOLTS)

IC/IB = 5 VBE(on) @ VCE = 6 V
1.8 2.4
TJ = 150°C
VOLTAGE (VOLTS)

1.4 2
25°C TJ = – 30°C

1 1.6 25°C 25°C

– 30°C

0.6 1.2 150°C

0.2 0.8
0.1 0.2 0.3 0.5 0.7 1 2 3 5 7 10 0.1 0.2 0.3 0.5 0.7 1 2 3 5 7 10
IC, COLLECTOR CURRENT (AMP) IC, COLLECTOR CURRENT (AMP)
Figure 5. Collector–Emitter Saturation Voltage Figure 6. Base–Emitter Voltage

10 104
7 VCE = 250 V
ts
5 TJ = 150°C
IC, COLLECTOR CURRENT ( µA)

103
3
tf
2
102 IC = ICES
t, TIME ( µs)

1
75°C
0.7 101
0.5 TJ = 25°C
0.3 IC/IB = 20
VCE = 12 Vdc 100 25°C
0.2
FORWARD
0.1 10–1 REVERSE
0.2 0.3 0.5 0.7 1 2 3 5 7 10 20 – 0.2 0 + 0.2 + 0.4 + 0.6 + 0.8
IC, COLLECTOR CURRENT (AMP) VBE, BASE-EMITTER VOLTAGE (VOLTS)

Figure 7. Turn–Off Switching Time Figure 8. Collector Cutoff Region

Motorola Bipolar Power Transistor Device Data 3

 
1
0.7
D = 0.5
0.5
RESISTANCE (NORMALIZED)
r(t), TRANSIENT THERMAL

0.3
0.2
0.2
0.1
0.1 P(pk)
0.05 RθJC(t) = r(t) RθJC
0.07
0.02 RθJC = °C/W MAX
0.05 D CURVES APPLY FOR POWER
0.01
PULSE TRAIN SHOWN t1
0.03
READ TIME AT t1 t2
0.02 SINGLE PULSE TJ(pk) – TC = P(pk) RθJC(t)
DUTY CYCLE, D = t1/t2
0.01
0.01 0.02 0.05 0.1 0.2 0.5 1 2 5 10 20 50 100 200 500 1,000 2,000
t, TIME (ms)

Figure 9. Thermal Response

50 There are two limitations on the power handling ability of a

20 100 µs
transistor: average junction temperature and second break-
IC, COLLECTOR CURRENT (AMP)

10 MJ10012 down. Safe operating area curves indicate IC – VCE limits of

5 5.0 ms the transistor that must be observed for reliable operation,
MJH10012 1.0 ms i.e., the transistor must not be subjected to greater dissipa-
2
1 tion than the curves indicate.
The data of Figure 10 is based on TC = 25_C, T J(pk) is
dc variable depending on power level. Second breakdown pulse
0.2 limits are valid for duty cycles to 10% but must be derated
TC = 25°C
0.1 when TC ≥ 25_C. Second breakdown limitations do not der-
BONDING WIRE LIMIT
ate the same as thermal limitations. Allowable current at the
THERMAL LIMIT (SINGLE PULSE)
SECOND BREAKDOWN LIMIT voltages shown on Figure 10 may be found at any case tem-
0.01 perature by using the appropriate curve on Figure 11.
0.005 T J(pk) may be calculated from the data in Figure 11. At high
5 10 20 30 50 70 100 200 300 500
VCE, COLLECTOR–EMITTER VOLTAGE (VOLTS) case temperatures, thermal limitations will reduce the power
that can be handled to values less than the limitations im-
Figure 10. Forward Bias Safe Operating Area posed by second breakdown.

10 mH
100
STANCORE
SECOND BREAKDOWN 1.5 C2688
VCC = 12 Vdc
POWER DERATING FACTOR (%)

DERATING
80 10 Vdc VZ = 400 V
0 Vdc
t1
20
THERMAL DERATING 5 ms 1N4933 0.3
60
220 T.U.T. µF
2N5881 27

20 MJH10012
MJ10012

t1 to be selected such that IC reaches 6 Adc before switch-off.

0
0 40 80 120 160 200 NOTE: “Usage Test,” Figure 12 specifies energy handling
TC, CASE TEMPERATURE (°C) capabilities in an automotive ignition circuit.

Figure 11. Power Derating Figure 12. Usage Test Circuit

4 Motorola Bipolar Power Transistor Device Data

  
PACKAGE DIMENSIONS

A
N NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
C Y14.5M, 1982.
–T– SEATING 2. CONTROLLING DIMENSION: INCH.
PLANE 3. ALL RULES AND NOTES ASSOCIATED WITH
E REFERENCED TO–204AA OUTLINE SHALL APPLY.
D 2 PL K
INCHES MILLIMETERS
0.13 (0.005) M T Q M Y M DIM MIN MAX MIN MAX
A 1.550 REF 39.37 REF
U B ––– 1.050 ––– 26.67
L –Y–
V C 0.250 0.335 6.35 8.51
D 0.038 0.043 0.97 1.09
2 E 0.055 0.070 1.40 1.77
G B G 0.430 BSC 10.92 BSC
H 1 H 0.215 BSC 5.46 BSC
K 0.440 0.480 11.18 12.19
L 0.665 BSC 16.89 BSC
–Q– N ––– 0.830 ––– 21.08
Q 0.151 0.165 3.84 4.19
0.13 (0.005) M T Y M U 1.187 BSC 30.15 BSC
V 0.131 0.188 3.33 4.77

STYLE 1:
PIN 1. BASE
2. EMITTER
CASE: COLLECTOR

CASE 1–07
TO–204AA (TO–3)
ISSUE Z

C NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
B Q E Y14.5M, 1982.
2. CONTROLLING DIMENSION: MILLIMETER.

MILLIMETERS INCHES
U 4 DIM MIN MAX MIN MAX
A 19.00 19.60 0.749 0.771
A B 14.00 14.50 0.551 0.570
L C 4.20 4.70 0.165 0.185
S D 1.00 1.30 0.040 0.051
1 2 3 E 1.45 1.65 0.058 0.064
K G 5.21 5.72 0.206 0.225
H 2.60 3.00 0.103 0.118
J 0.40 0.60 0.016 0.023
K 28.50 32.00 1.123 1.259
L 14.70 15.30 0.579 0.602
Q 4.00 4.25 0.158 0.167
S 17.50 18.10 0.689 0.712
U 3.40 3.80 0.134 0.149
V 1.50 2.00 0.060 0.078
D J
V H STYLE 1:
PIN 1. BASE
G 2. COLLECTOR
3. EMITTER
4. COLLECTOR

CASE 340D–01
SOT 93, TO–218 TYPE
ISSUE A

Motorola Bipolar Power Transistor Device Data 5

 

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6 Motorola Bipolar Power Transistor Device Data

*MJ10012/D*
◊ MJ10012/D